208258 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Channel region of field-effect devices of charge coupled devices
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE
#2GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES
#3Memory device having 2-transistor vertical memory cell and wrapped data line structure
#4Memory device having 2-transistor vertical memory cell and conductive shield structure
#5Gate-all-around integrated circuit structures having dual nanoribbon channel structures
#6Gate-all-around integrated circuit structures having dual nanoribbon channel structures
#7Field effect transistor, memory element and manufacturing method of charge storage structure using paraelectric and ferroelectric material
#8Semiconductor memory device and method for operating the same
#9Gain measurement structure
#10CCD charge-splitter adjustment by static charge gradient
#11Memory device having 2-transistor vertical memory cell and wrapped data line structure