ClassID:

208257

H01L29/1058 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Channel region of field-effect devices of field-effect transistors with PN junction gate

Recent Application in this class:
#1
20250056853
2025-02-13

JUNCTION FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#2
20250040166
2025-01-30

Planar JFET Device with Reduced Gate Resistance

#3
20240387718
2024-11-21

HETEROJUNCTION STRUCTURE WITH VARYING LAYER COMPOSITION

#4
20240332430
2024-10-03

SEMICONDUCTOR DEVICE

#5
20240055514
2024-02-15

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD

#6
20240055513
2024-02-15

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD

#7
20240055512
2024-02-15

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD

#8
20240055511
2024-02-15

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSISTOR AND ASSOCIATED MANUFACTURING METHOD

#9
20230420575
2023-12-28

METHODS OF FORMING UNIFORMLY DOPED DEEP IMPLANTED REGIONS IN SILICON CARBIDE AND SILICON CARBIDE LAYERS INCLUDING UNIFORMLY DOPED IMPLANTED REGIONS

#10
20230261117
2023-08-17

TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION

#11
20230147746
2023-05-11

Silicon carbide junction field effect transistors

#12
20230106300
2023-04-06

GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

#13
20230098516
2023-03-30

Single sided channel mesa power junction field effect transistor

#14
20230047121
2023-02-16

Single sided channel mesa power junction field effect transistor

#15
20230042174
2023-02-09

SEMICONDUCTOR DEVICE

#16
20220344454
2022-10-27

Transient-voltage-suppression protection device, manufacturing process and electronic product

#17
20220190152
2022-06-16

SEMICONDUCTOR DEVICE

#18
20220140116
2022-05-05

Junction field effect transistor on silicon-on-insulator substrate

#19
20220085200
2022-03-17

Semiconductor device

#20
20220059706
2022-02-24

Single sided channel mesa power junction field effect transistor

#21
20220013671
2022-01-13

GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

#22
20210408260
2021-12-30

Semiconductor devices having multiple barrier patterns

#23
20210313475
2021-10-07

Semiconductor device

#24
20210167166
2021-06-03

Semiconductor device and manufacturing method thereof

#25
20210028291
2021-01-28

Semiconductor devices having multiple barrier patterns

#26
20200335579
2020-10-22

Semiconductor Device with an Edge Termination Structure

#27
20200243661
2020-07-30

Amplifier having switch and switch control processor controlling switch

#28
20200212207
2020-07-02

MANUFACTURING METHOD OF JUNCTION FIELD EFFECT TRANSISTOR

#29
20200111878
2020-04-09

GaN lateral vertical JFET with regrown channel and dielectric gate

#30
20200098935
2020-03-26

Semiconductor device

#31
20200066711
2020-02-27

Integrating a junction field effect transistor into a vertical field effect transistor

#32
20190334036
2019-10-31

Semiconductor device and method of manufacturing the same

#33
20190229209
2019-07-25

Semiconductor devices and methods for manufacturing the same

#34
20190140109
2019-05-09

FOUR TERMINAL STACKED COMPLEMENTARY JUNCTION FIELD EFFECT TRANSISTORS

#35
20190067275
2019-02-28

Logic gate cell structure

#36
20190043969
2019-02-07

Bidirectional bipolar-mode JFET driver circuitry

#37
20190043852
2019-02-07

Monolithically integrated semiconductor switch, in particular a power circuit breaker

#38
20190019884
2019-01-17

Integrated JFET structure with implanted backgate

#39
20190013403
2019-01-10

Semiconductor device with high voltage field effect transistor and junction field effect transistor

#40
20180358476
2018-12-13

Four terminal stacked complementary junction field effect transistors

#41
20180308934
2018-10-25

JFET and method for fabricating the same

#42
20180219106
2018-08-02

Lateral gallium nitride JFET with controlled doping profile

#43
20180219072
2018-08-02

GaN lateral vertical JFET with regrown channel and dielectric gate

#44
20180197991
2018-07-12

Semiconductor structure having a junction field effect transistor and a high voltage transistor and method for manufacturing the same

#45
20180175176
2018-06-21

Cascoded high voltage junction field effect transistor

#46
20180076286
2018-03-15

Semiconductor device and manufacturing method thereof

#47
20180061973
2018-03-01

Compound semiconductor device and method of manufacturing the compound semiconductor device

#48
20180061632
2018-03-01

Process of forming nitride semiconductor layers

#49
20180005830
2018-01-04

Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures

#50
20170352757
2017-12-07

FIELD EFFECT TRANSISTOR WHICH CAN BE BIASED TO ACHIEVE A UNIFORM DEPLETION REGION

#51
20170288045
2017-10-05

Methods of making multichannel devices with improved performance

#52
20170278960
2017-09-28

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

#53
20170263710
2017-09-14

SEMICONDUCTOR ELEMENT, ELECTRIC EQUIPMENT, BIDIRECTIONAL FIELD EFFECT TRANSISTOR, AND MOUNTED STRUCTURE BODY

#54
20170213917
2017-07-27

Planar multi-implanted JFET

#55
20170125572
2017-05-04

Semiconductor device

#56
20170117418
2017-04-27

Planar triple-implanted JFET

#57
20170117392
2017-04-27

Planar triple-implanted JFET

#58
20170110556
2017-04-20

Method of manufacturing semiconductor device that includes forming junction field effect transistor including recessed gate

#59
20170077316
2017-03-16

Semiconductor device and method for manufacturing the same

#60
20170077270
2017-03-16

Vertical junction FinFET device and method for manufacture

#61
20170062431
2017-03-02

Method of forming a junction field effect transistor

#62
20170047394
2017-02-16

Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

#63
20160380117
2016-12-29

Trench vertical JFET with improved threshold voltage control

#64
20160351696
2016-12-01

Extremely large spin hall angle in topological insulator pn junction

#65
20160336425
2016-11-17

Multichannel devices with improved performance and methods of making the same

#66
20160293758
2016-10-06

Semiconductor structure having a junction field effect transistor and a high voltage transistor and method for manufacturing the same

#67
20160293602
2016-10-06

Vertical junction FinFET device and method for manufacture

#68
20160268446
2016-09-15

TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL

#69
20160181369
2016-06-23

JFET DEVICE AND ITS MANUFACTURING METHOD

#70
20160126340
2016-05-05

Multichannel devices with improved performance

#71
20160064449
2016-03-03

Method of manufacturing junction field effect transistor

#72
20160043236
2016-02-11

High voltage depletion mode N-channel JFET

#73
20150357481
2015-12-10

Junction field effect transistor

#74
20150333158
2015-11-19

Cascoded high voltage junction field effect transistor

#75
20150295571
2015-10-15

Radiation-hardened dual gate semiconductor transistor devices containing various improved structures including MOSFET gate and JFET gate structures and related methods

#76
20150214385
2015-07-30

Semiconductor device including junction field effect transistor and method of manufacturing the same

#77
20150137192
2015-05-21

High voltage junction field effect transistor

#78
20150137182
2015-05-21

Semiconductor device having V-shaped region

#79
20150137143
2015-05-21

Junction field effect transistor cell with lateral channel region

#80
20150115333
2015-04-30

Lateral super junctions with high substrate breakdown and build in avalanche clamp diode

#81
20150102391
2015-04-16

Junction field effect transistor, and method of manufacture thereof

#82
20150072486
2015-03-12

Method for manufacturing silicon carbide semiconductor device

#83
20150060946
2015-03-05

HEMT with a metal film between the gate electrode and the drain electrode

#84
20150048421
2015-02-19

High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same

#85
20150014769
2015-01-15

High voltage laterally diffused metal oxide semiconductor

#86
20150008487
2015-01-08

Junction field-effect transistor with raised source and drain regions formed by selective epitaxy

#87
20140312357
2014-10-23

Semiconductor device

#88
20140159058
2014-06-12

Silicon carbide semiconductor device having layer covering corner portion of depressed portion

#89
20140087529
2014-03-27

Power device and method for manufacturing the same

#90
20130277718
2013-10-24

JFET device and method of manufacturing the same

#91
20130248944
2013-09-26

Junction type field effect transistor and manufacturing method thereof

#92
20130119442
2013-05-16

Junction field-effect transistor with raised source and drain regions formed by selective epitaxy

#93
20130009164
2013-01-10

Power device and method for manufacturing the same

#94
20120223340
2012-09-06

Vertical junction field effect transistors having sloped sidewalls and methods of making

#95
20120146105
2012-06-14

High-voltage transistor device with integrated resistor

#96
20110217829
2011-09-08

Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

#97
20110156053
2011-06-30

Semiconductor device having D mode JFET and E mode JFET and method for manufacturing the same

#98
20110147808
2011-06-23

Asymmetric junction field effect transistor

#99
20110042726
2011-02-24

High-voltage transistor device with integrated resistor

#100
20110020991
2011-01-27

Vertical junction field effect transistors having sloped sidewalls and methods of making

#101
20100207174
2010-08-19

Semiconductor structure and fabrication method thereof

#102
20100207173
2010-08-19

Asymmetric junction field effect transistor

#103
20100171118
2010-07-08

Junction Field-Effect Transistor Having Insulator-Isolated Source/Drain Regions and Fabrication Method Therefor

#104
20100163934
2010-07-01

METHOD FOR FABRICATING A JUNCTION FIELD EFFECT TRANSISTOR AND THE JUNCTION FIELD EFFECT TRANSISTOR ITSELF

#105
20100155743
2010-06-24

SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method

#106
20100149854
2010-06-17

SEMICONDUCTOR DEVICE STORAGE CELL STRUCTURE, METHOD OF OPERATION, AND METHOD OF MANUFACTURE

#107
20100148186
2010-06-17

Vertical junction field effect transistors having sloped sidewalls and methods of making

#108
20100097853
2010-04-22

Jeet memory cell

#109
20100032731
2010-02-11

Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures

#110
20100032729
2010-02-11

Integration of high voltage JFET in linear bipolar CMOS process

#111
20090315082
2009-12-24

Lateral junction field effect transistor and method of manufacturing the same

#112
20090278177
2009-11-12

Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

#113
20090278137
2009-11-12

Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

#114
20090137088
2009-05-28

JFET Having a Step Channel Doping Profile and Method of Fabrication

#115
20090101941
2009-04-23

Wrapped gate junction field effect transistor

#116
20080277696
2008-11-13

Lateral junction field effect transistor and method of manufacturing the same

#117
20080273398
2008-11-06

Semiconductor device storage cell structure, method of operation, and method of manufacture

#118
20080272409
2008-11-06

JFET Having a Step Channel Doping Profile and Method of Fabrication

#119
20080272403
2008-11-06

JFET device with virtual source and drain link regions and method of fabrication

#120
20070278540
2007-12-06

Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

#121
20070275515
2007-11-29

Deep buried channel junction field effect transistor (DBCJFET)

#122
20070262321
2007-11-15

Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer

#123
20060202238
2006-09-14

Lateral junction field effect transistor and method of manufacturing the same

#124
20050269661
2005-12-08

Lateral channel transistor

#125
20050247955
2005-11-10

Implant-controlled-channel vertical JFET

#126
20050230715
2005-10-20

Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

#127
20050093017
2005-05-05

Lateral junction field effect transistor and method of manufacturing the same

#128
20050006663
2005-01-13

Implant-controlled-channel vertical JFET

#129
16037072
2019-12-10

Integrating a junction field effect transistor into a vertical field effect transistor

#130
15994200
2019-04-30

High voltage breakdown tapered vertical conduction junction transistor

#131
15492805
2018-04-10

JFET and method for fabricating the same