208263 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Substrate region of field-effect devices of charge coupled devices
Gate-all-around integrated circuit structures having insulator fin on insulator substrate
#2GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING FIN STACK ISOLATION
#3Gate-all-around integrated circuit structures having insulator FIN on insulator substrate
#4Gate-all-around integrated circuit structures having fin stack isolation
#5Gate-all-around integrated circuit structures having insulator fin on insulator substrate
#6Semiconductor device including image pick up device