208260 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes Substrate region of field-effect devices
Sub-classes:SEMICONDUCTOR DEVICE
#2Method of forming III-V on insulator structure on semiconductor substrate
#3Semiconductor devices and methods for forming semiconductor devices
#4Semiconductor device, method of manufacturing semiconductor device, and semiconductor package
#5Method of forming III-V on insulator structure on semiconductor substrate
#6Protected electronic chip
#7Silicon carbide transistor
#8Transistors having ultra thin fin profiles and their methods of fabrication
#9Bipolar junction semiconductor device and method for manufacturing thereof
#10Injection control in semiconductor power devices
#11Group III-V Transistor with Voltage Controlled Substrate
#12Injection control in semiconductor power devices
#13Adding decoupling function for TAP cells
#14SiC bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer
#15Method of fabricating a tunable schottky diode with depleted conduction path
#16Tunable schottky diode with depleted conduction path
#17Method of manufacturing compound semiconductor device
#18Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
#19Buried layer of an integrated circuit
#20Adding decoupling function for tap cells
#21Epitaxial wafer and semiconductor element
#22Semiconductor device having high performance channel
#23Structure and method to reduce wafer warp for gallium nitride on silicon wafer
#24Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device
#25Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same
#26Gated resonant tunneling diode
#27Semiconductor device
#28Buried layer of an integrated circuit
#29Quantum dot transistor
#30Gated resonant tunneling diode
#31Junction field effect transistor using a silicon on insulator architecture
#32Compound semiconductor device and method of manufacturing the same
#33Variable capacitor structures with reduced channel resistance
#34Structures with contact trenches and isolation trenches
#35Stacked capacitor structure