208290 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#302SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#303Semiconductor device and manufacturing method thereof
#304Semiconductor device and method for manufacturing the same
#305III-nitride-based semiconductor devices on patterned substrates and method of making the same
#306GROUP III-NITRIDE TRANSISTORS WITH BACK BARRIER STRUCTURES AND BURIED P-TYPE LAYERS AND METHODS THEREOF
#307Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
#308CIRCUITS AND GROUP III-NITRIDE TRANSISTORS WITH BURIED P-LAYERS AND CONTROLLED GATE VOLTAGES AND METHODS THEREOF
#309Semiconductor transistor structure with reduced contact resistance and fabrication method thereof
#310Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device
#311Epitaxies of a chemical compound semiconductor
#312HOLE DRAINING STRUCTURE FOR SUPPRESSION OF HOLE ACCUMULATION
#313Source leakage current suppression by source surrounding gate structure
#314ENHANCED SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS THEREOF
#315Semiconductor structure and method for manufacturing thereof
#316Power Schottky barrier diodes with high breakdown voltage and low leakage current
#317Radio frequency front end (RFFE) hetero-integration
#318Electrode structure for vertical group III-V device
#319Method for forming semiconductor device with helmet structure between two semiconductor fins
#320MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING SINGLE FREQUENCY LASER DIODE
#321SUPERLATTICE STRUCTURE
#322SEMICONDUCTOR STRUCTURE
#323Bidirectional device provided with a stack of two high electron mobility transistors connected head-to-tail
#324High electron mobility transistor and fabrication method thereof
#325Semiconductor device and method for manufacturing the same
#326Semiconductor device and method for manufacturing the same
#327Electronic device comprising two high electron mobility transistors
#328Semiconductor device and method for manufacturing the same
#329SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#330Semiconductor structures
#331VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME
#332Bidirectional switch module and bidirectional switch
#333High electron mobility transistor
#334III-V semiconductor device with integrated power transistor and start-up circuit
#335QUANTUM HETEROSTRUCTURES, RELATED DEVICES AND METHODS FOR MANUFACTURING THE SAME
#336Semiconductor device and fabrication method thereof
#337Semiconductor device
#338Semiconductor device structures and methods of manufacturing the same
#339Semiconductor device
#340Semiconductor layer structure
#341High electron mobility transistor
#342Method of fabricating high electron mobility transistor
#343Semiconductor device comprising a doped epitaxial layer and method of manufacturing the same
#344INDIUM-GALLIUM-NITRIDE STRUCTURES AND DEVICES
#345Semiconductor device and fabricating method thereof
#346Quantum structure getter for radiation hardened transistors
#347Structures for Providing Electrical Isolation in Semiconductor Devices
#348Manufacturing method for semiconductor device
#349High electron mobility transistor
#350Tunnel field-effect transistor with reduced trap-assisted tunneling leakage
#351High power transistors
#352Semiconductor device and method of fabricating a semiconductor device
#353Tunnel Field-Effect Transistor and Method for Manufacturing the Same
#354Semiconductor structure and manufacturing method for the same
#355Ohmic contacts with direct access pathways to two-dimensional electron sheets
#356DIODE, METHOD FOR PRODUCING DIODE, AND ELECTRONIC DEVICE
#357High electron mobility transistor and method of manufacturing the same
#358GaN/diamond wafers
#359SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#360Hetero-junction bipolar transistor and method for manufacturing the same
#361N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES
#362High electron mobility transistor and method for fabricating the same
#363HEMT transistor with improved gate arrangement
#364HIGH-LINEARITY GAN-BASED MILLIMETER WAVE DEVICE AND PREPARATION METHOD THEREOF
#365High-threshold-voltage normally-off high-electron-mobility transistor and preparation method therefor
#366Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
#367III-V semiconductor device with integrated protection functions
#368Semiconductor device and method for manufacturing the same
#369PGaN enhancement mode HEMTs with dopant diffusion spacer
#370Planar high-electron-mobility transistor
#371Gallium nitride component and drive circuit thereof
#372Semiconductor device and method for manufacturing the same
#373ENHANCEMENT-MODE SEMICONDUCTOR DEVICE
#374Enhancement-mode semiconductor device
#375Epitaxial structure
#376Epitaxial structure
#377Epitaxial structure
#378HEMT and method of fabricating the same
#379P type gallium nitride conformal epitaxial structure over thick buffer layer
#380Miniature field plate T-gate and method of fabricating the same
#381Nitride semiconductor device
#382Process of forming an electronic device including a doped gate electrode
#383Nitride semiconductor device
#384Transistor with buffer structure having carbon doped profile
#385GaN/diamond wafers
#386Breakdown Resistant HEMT Substrate and Device
#387HEMT and method of fabricating the same
#388High-voltage semiconductor structure
#389N-polar devices including a depleting layer with improved conductivity
#390Semiconductor device with conformal dielectric layer and fabricating method thereof
#391SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
#392Semiconductor device
#393Semiconductor structure
#394Oscillator
#395SEMICONDUCTOR DEVICE
#396High electron mobility transistor and method for fabricating the same
#397High Electron Mobility Transistor (HEMT) with a back barrier layer
#398GROUP III NITRIDE SEMICONDUCTOR DEVICE WITH FIRST AND SECOND CONDUCTIVE LAYERS
#399Parasitic channel mitigation using silicon carbide diffusion barrier regions
#400Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
#401CONFINED GALLIUM NITRIDE EPITAXIAL LAYERS
#402MULTI-CHANNEL GATE-ALL-AROUND HIGH-ELECTRON-MOBILITY TRANSISTOR
#403NORMALLY-OFF TRANSISTOR WITH REDUCED ON-STATE RESISTANCE AND MANUFACTURING METHOD
#404Apparatus and circuits including transistors with different polarizations and methods of fabricating the same
#405Bipolar transistor and method for producing the same
#406High electron mobility transistor with doped semiconductor region in gate structure
#407Semiconductor device with multichannel heterostructure and manufacturing method thereof
#408Semiconductor device
#409Semiconductor device and manufacturing method thereof
#410III-nitride semiconductor device with non-active regions to shape 2DEG layer
#411Semiconductor device and method for manufacturing the same
#412Gallium nitride transistor
#413Semiconductor structures and manufacturing methods thereof
#414Stacked high barrier III-V power semiconductor diode
#415REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
#416High electron mobility transistor and method for fabricating the same
#417Semiconductor device and fabrication method thereof
#418Nitride semiconductor device and nitride semiconductor package
#419Semiconductor device, method for manufacturing the same, power circuit, and computer
#420A PNICTIDE NANOCOMPOSITE STRUCTURE FOR LATTICE STABILIZATION
#421Gallium nitride (GAN) three-dimensional integrated circuit technology
#422CO-INTEGRATED GALLIUM NITRIDE (GAN) AND COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) INTEGRATED CIRCUIT TECHNOLOGY
#423Cap structure coupled to source to reduce saturation current in HEMT device
#424EPITAXIAL STRUCTURE OF GA-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND GATE PROTECTION DEVICE THEREOF
#425GALLIUM NITRIDE ENHANCEMENT MODE DEVICE
#426Semiconductor device
#427Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same
#428EPITAXIAL STRUCTURE OF GA-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND GATE PROTECTION DEVICE THEREOF
#429Tunable monolithic group III-nitride filter banks
#430Semiconductor device
#431Semiconductor device
#432Semiconductor structure
#433Compound semiconductor substrate including nitride semiconductor layer having varying threading dislocation densities
#434Heterojunction semiconductor device with low on-resistance
#435SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
#436Semiconductor device and fabrication method thereof
#437Semiconductor device and fabrication method thereof
#438III-N TRANSISTORS WITH INTEGRATED LINEARIZATION DEVICES
#439METHOD FOR ETCHING A III-N MATERIAL LAYER
#440Semiconductor substrate, semiconductor device, and method for forming semiconductor structure
#441Method of forming a GaN sensor having a controlled and stable threshold voltage in the sensing area
#442Nitride semiconductor device
#443Semiconductor device structures and methods of manufacturing the same
#444High electron mobility transistor and method for forming the same
#445GATE CONTROL FOR HEMT DEVICES USING DIELECTRIC BETWEEN GATE EDGES AND GATE FIELD PLATES
#446Nucleation layer deposition method
#447Electrical circuit of semiconductor channel resistor and apparatus and method for generating the same
#448Gallium Nitride-Based Device with Step-Wise Field Plate and Method Making the Same
#449Semiconductor structure and high-electron mobility transistor device having the same
#450Field effect transistor and method for manufacturing same
#451Device and semiconductor structure for improving the disadvantages of p-GaN gate high electron mobility transistor
#452Semiconductor structure and semiconductor device
#453Bipolar transistor and radio-frequency power amplifier module
#454Group III nitride laminate, semiconductor element, and method for producing group III nitride laminate
#455Transistor with isolation below source and drain
#456SEMICONDUCTOR MULTILAYER STRUCTURE
#457BYPASSED GATE TRANSISTORS HAVING IMPROVED STABILITY
#458Method of fabricating a transistor
#459Semiconductor device
#460Compound semiconductor device, compound semiconductor substrate, and method for manufacturing compound semiconductor device
#461Vertical high-blocking III-V bipolar transistor
#462Semiconductor device and fabrication method thereof
#463Field effect transistor with controllable resistance
#464GaN-based superjunction vertical power transistor and manufacturing method thereof
#465Semiconductor Structure and Method for Manufacturing the Same
#466NOVEL APPROACH TO CONTROLLING LINEARITY IN N-POLAR GAN MISHEMTS
#467TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS
#468III-N based material structures, methods, devices and circuit modules based on strain management
#469Transistor manufacturing method
#470Method for manufacturing nitride semiconductor device
#471Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based device
#472Semiconductor device comprising electron blocking layer
#473Semiconductor device and manufacturing method thereof employing an etching transition layer
#474Semiconductor device including different nitride regions and method for manufacturing same
#475Selective thermal annealing method
#476Semiconductor device and manufacturing method thereof
#477NITRIDE SEMICONDUCTOR DEVICE
#478Structures and methods for controlling dopant diffusion and activation
#479Electrode structure for vertical group III-V device
#480DIODES WITH STRAIGHT SEGMENT ANODES
#481Heterojunction electronic component comprising a field plate and a p-doped floating region
#482HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
#483Methods of fabricating semiconductor structures with two-step etching
#484Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers
#485Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
#486SCALABLE CIRCUIT-UNDER-PAD DEVICE TOPOLOGIES FOR LATERAL GaN POWER TRANSISTORS
#487Field-effect transistor and manufacturing method therefor
#488Integrated circuit devices with an engineered substrate
#489Semiconductor device and method for manufacturing the same
#490Semiconductor device with linear capacitance
#491High electron mobility transistor and method of manufacturing the same
#492Group III nitride device and method of fabricating a Group III nitride-based device
#493High electron mobility transistor and fabrication method thereof
#494Group III nitride-based transistor device having a field plate
#495Epitaxial structure having diffusion barrier layer
#496Transistor devices and methods of forming a transistor device
#497Three dimensional vertically structured electronic devices
#498Semiconductor device and manufacturing method thereof
#499Semiconductor device and method for forming the same
#500Semiconductor device having a programming element
#501Field effect transistor and semiconductor device
#502Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearity
#503Heterojunction bipolar transistor including ballast resistor and semiconductor device
#504Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
#505Field effect transistor including gradually varying composition channel
#506Nitride semiconductor device
#507Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device
#508Power amplifying device
#509HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
#510Super junction gated AlGaN GaN HEMT
#5112-dimensional electron gas and 2-dimensional hole gas junction based semiconductor device
#512Low turn on and high breakdown voltage lateral diode
#513Transistor having resistive field plate
#514Semiconductor device
#515High electron mobility transistor and fabrication method thereof
#516High electron mobility transistor and fabrication method thereof
#517AND gate based on ballistic electrons
#518CHARGE-TRAPPING LAYERS FOR III-V SEMICONDUCTOR DEVICES
#519Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices
#520Source leakage current suppression by source surrounding gate structure
#521HEMT-compatible lateral rectifier structure
#522Control system, switch system, power converter, method for controlling bidirectional switch element, and program
#523Heterostructure including alternating sets of channel and barrier layers
#524Resistive element and power amplifier circuit
#525Epitaxial structure of GaN-based radio frequency device based on Si substrate and its manufacturing method
#526Semiconductor device and manufacturing method thereof
#527Semiconductor device and manufacturing method thereof
#528Semiconductor device and fabrication method thereof
#529Semiconductor device and fabrication method thereof
#530Semiconductor structure and method of forming the same
#531Semiconductor device
#532Semiconductor having a backside wafer cavity for radio frequency (RF) passive device integration and/or improved cooling and process of implementing the same
#533Semiconductor structure and manufacturing method therefor
#534High electron mobility transistor and method for fabricating the same
#535Direct growth of lateral III-V bipolar transistor on silicon substrate
#536Polarization-induced 2D hole gases for high-voltage p-channel transistors
#537GaN/diamond wafers
#538GaN/diamond wafers
#539Method of forming a semiconductor wafer containing a gallium-nitride layer and two diamond layers
#540GaN/diamond wafers
#541Barrier structure configured to increase performance of III-V devices
#542Method of forming a GaN sensor having a controlled and stable threshold voltage
#543Epitaxial structure and transistor including the same
#544Silicon rich nitride layer between a plurality of semiconductor layers
#545High electron mobility transistor with doped semiconductor region in gate structure
#546Bipolar transistor and method for producing the same
#547SEMICONDUCTOR DEVICE
#548Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device
#549Semiconductor device
#550HETEROJUNCTION BIPOLAR TRANSISTOR
#551High electron mobility transistor (HEMT) device and method of forming same
#552Semiconductor device and method for fabricating a semiconductor wafer
#553Vertical nitride semiconductor transistor device
#554Electronic Device Including a High Electron Mobility Transistor and a Diode
#555Method for manufacturing high electron mobility transistor with at least two barrier layers
#556High ruggedness heterojunction bipolar transistor (HBT)
#557Semiconductor device
#558Lateral Schottky diode
#559Clamping circuit integrated on gallium nitride semiconductor device and related semiconductor device
#560SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
#561Semiconductor structures and methods of forming thereof
#562Semiconductor device
#563Semiconductor device and method for manufacturing the same
#564Semiconductor device
#565Semiconductor device and method of fabricating the same
#566Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes
#567High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
#568HEMT transistor including field plate regions and manufacturing process thereof
#569Semiconductor apparatus and device with semiconductor layer having crystal orientations that differ in Young's modulus and relative angle
#570Deep gate-all-around semiconductor device having germanium or group III-V active layer
#571Semiconductive device with mesa structure and method of fabricating the same
#572Low parasitic Ccb heterojunction bipolar transistor
#573Nitride semiconductor device
#574Three dimensional vertically structured electronic devices
#575METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#576Semiconductor structure, transistor including the same, and method of manufacturing transistor
#577Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget
#578High electron mobility transistor
#579Process of forming a high electron mobility transistor including a gate electrode layer spaced apart from a silicon nitride film
#580INDIUM-GALLIUM-NITRIDE STRUCTURES AND DEVICES
#581Semiconductor device manufacturing method
#582Method of fabricating transistor with short gate length by two-step photolithography
#583Semiconductor device and manufacturing method thereof
#584Device for electric field induced local magnetization
#585Method for preparing a p-type semiconductor structure, enhancement mode device and method for manufacturing the same
#586High electron mobility transistor and fabrication method thereof
#587Semiconductor crystal substrate, infrared detector, and method for producing semiconductor crystal substrate
#588High electron mobility transistors having improved drain current drift and/or leakage current performance
#589Semiconductor device and power amplifier module
#590Semiconductor device
#591Method for manufacturing a gate terminal of a HEMT device, and HEMT device
#592Semiconductor structure and manufacturing method therefor
#593Electrostatically controlled gallium nitride based sensor and method of operating same
#594Sidewall passivation for HEMT devices
#595Method of manufacturing semiconductor device and semiconductor device
#596Aluminum-based gallium nitride integrated circuits
#597Semiconductor thin film structures and electronic devices including the same
#598DEVICES, SYSTEMS, AND METHODS FOR THE DETECTION OF ANALYTES
#599High electron mobility transistor with reverse arrangement of channel layer and barrier layer
#600Dislocation glide suppression for misfit dislocation free heteroepitaxy