208290 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
SEMICONDUCTOR DEVICE
#602Semiconductor device having reduced capacitance between source and drain pads
#603High electron mobility transistor and method for fabricating the same
#604High electron mobility transistor (HEMT) devices and methods
#605Double-channel HEMT device and manufacturing method thereof
#606Heterojunction bipolar transistor
#607Quantum well field-effect transistor and method for manufacturing the same
#608Epitaxial structure of N-face group III nitride, active device, and gate protection device thereof
#609Semiconductor device
#610FinFET device and method of forming same
#611Semiconductor device and manufacturing method thereof
#612Monolithic integration of a thin film transistor over a complimentary transistor
#613High electron mobility transistor
#614Semiconductor device
#615Enhancement mode high electron mobility transistor
#616Cap structure coupled to source to reduce saturation current in HEMT device
#617Opto-electronic HEMT
#618Method and apparatus for manufacturing a semiconductor layer and substrate provided therewith
#619Gallium nitride epitaxial structures for power devices
#620HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND METHODS FOR FORMING THE SAME
#621Semiconductor structure comprising p-type N-face GAN-based semiconductor layer and manufacturing method for the same
#622Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer
#623Semiconductor device, method of manufacturing semiconductor device, and electronic device
#624Epitaxies of a chemical compound semiconductor
#625Power amplifier systems with control interface and bias circuit
#626Semiconductor structure and manufacturing method for the semiconductor structure
#627Epitaxial structure
#628High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same
#629Enhancement mode III-nitride devices having an Al-SiO gate insulator
#630Field effect transistor
#631Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device
#632Semiconductor structure having sets of III-V compound layers and method of forming
#633Compound semiconductor heterojunction bipolar transistor
#634Method for manufacturing transistor
#635SEMICONDUCTOR EPITAXIAL STRUCTURE AND METHOD OF FORMING THE SAME
#636High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
#637High electron mobility transistor and method for fabricating the same
#638Binary III-nitride 3DEG heterostructure HEMT with graded channel for high linearity and high power applications
#639Semiconductor devices and methods of manufacturing the same
#640Group III-nitride polarization junction diodes
#641Nitride semiconductor device
#642Nitride semiconductor apparatus and manufacturing method thereof
#643Group III nitride enhancement-mode HEMT based on composite barrier layer structure and manufacturing method thereof
#644Semiconductor device
#645GROUP-III NITRIDE LAMINATE
#646Group III-nitride Schottky diode
#647Enhancement mode saddle gate device
#648HEMT and method of adjusting electron density of 2DEG
#649Group III-nitride antenna diode
#650Gate stack design for GaN e-mode transistor performance
#651Gate-sinking pHEMTs having extremely uniform pinch-off/threshold voltage
#652Semiconductor structure
#653COMPOUND SEMICONDUCTOR SUBSTRATE
#654Semiconductor structure having sets of III-V compound layers and method of forming
#655High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
#656High electron mobility transistors having improved contact spacing and/or improved contact vias
#657Semiconductor Device and Method for Fabricating a Wafer
#658Method for forming semiconductor device with helmet structure between two semiconductor fins
#659CO-INTEGRATION OF EXTENDED-DRAIN AND SELF-ALIGNED III-N TRANSISTORS ON A SINGLE DIE
#660Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
#661Field effect transistor including gradually varying composition channel
#662RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages
#663Methods for forming fluorine doped high electron mobility transistor (HEMT) devices
#664Integrated enhancement/depletion mode HEMT
#665Nitride semiconductor device
#666High electron mobility transistor with reverse arrangement of channel layer and barrier layer
#667Semiconductor device with suppressed self-turn-on
#668Semiconductor structure and method for forming the same
#669Heterojunction bipolar transistor
#670Semiconductor element having an enhancement-type transistor structure
#671High electron mobility transistors with charge compensation
#672Enhancement-depletion cascode arrangements for enhancement mode III-N transistors
#673Semiconductor devices having a gate field plate including an extension portion and methods for fabricating the semiconductor device
#674High electron mobility transistor and fabrication method thereof
#675III-V semiconductor device with integrated power transistor and start-up circuit
#676Method for manufacturing semiconductor device
#677III-V semiconductor device with integrated protection functions
#678III-V depletion mode semiconductor device
#679III-NITRIDE TRANSISTOR DEVICE WITH A THIN BARRIER
#680Microwave amplifiers tolerant to electrical overstress
#681Group-III nitride semiconductor device and method for fabricating the same
#682Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same
#683Substrates and methods for forming the same
#684Stacked high barrier III-V power semiconductor diode
#685Lateral III-nitride devices including a vertical gate module
#686Schottky barrier diode and method for manufacturing the same
#687Bipolar transistor and method for producing the same
#688III-N transistors with contacts of modified widths
#689Charge-induced threshold voltage tuning in III-N transistors
#690Semiconductor device
#691Power semiconductor device with an auxiliary gate structure
#692Semiconductor structures and methods with high mobility and high energy bandgap materials
#693High electron mobility transistor with improved barrier layer
#694High electron mobility transistor and method for forming the same
#695Cointegration of gallium nitride and silicon
#696Gate voltage-tunable electron system integrated with superconducting resonator for quantum computing device
#697Bypassed gate transistors having improved stability
#698Two-dimensional electron gas (2DEG)-confined devices and methods
#699Transistor with multi-metal gate
#700Miniature field plate T-gate and method of fabricating the same
#701Semiconductor device
#702High-mobility field effect transistors with wide bandgap fin cladding
#703Semiconductor device
#704Field-effect transistors and methods of manufacturing the same
#705SEMICONDUCTOR APPARATUS
#706Tunnel field-effect transistor with reduced trap-assisted tunneling leakage
#707PMOS and NMOS contacts in common trench
#708III-N transistors with local stressors for threshold voltage control
#709Semiconductor device including different nitride regions and method for manufacturing same
#710Epitaxially fabricated heterojunction bipolar transistors
#711Semiconductor device and method for fabricating the same
#712Transmission line structures for III-N devices
#713Power semiconductor device with a series connection of two devices
#714Semiconductor component, use of a semiconductor component
#715Protective insulator for HFET devices
#716Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
#717Semiconductor device
#718Group III nitride semiconductor device with first and second conductive layers
#719Tunnel field-effect transistor with reduced trap-assisted tunneling leakage
#720Methods for processing high electron mobility transistor (HEMT)
#721Semiconductor device, method of manufacturing the same and electronic device including the device
#722Planar transistors with wrap-around gates and wrap-around source and drain contacts
#723Transistor with isolation below source and drain
#724Reducing off-state leakage in semiconductor devices
#725Monolithic multi-I region diode switches
#726Field effect transistor and semiconductor device
#727III-NITRIDE SEMICONUCTOR DEVICES HAVING A BORON NITRIDE ALLOY CONTACT LAYER AND METHOD OF PRODUCTION
#728High electron mobility transistor having a boron nitride alloy interlayer and method of production
#729Integration of III-N transistors and semiconductor layer transfer
#730Semiconductor multilayer structure
#731Reducing band-to-band tunneling in semiconductor devices
#732Monolithic self-aligned heterojunction bipolar transistor (HBT) and complementary metal-oxide-semiconductor (CMOS)
#733GATE STRUCTURES RESISTANT TO VOLTAGE BREAKDOWN
#734Pnictide nanocomposite structure for lattice stabilization
#735Heterojunction bipolar transistors with field plates
#736CMOS circuit with a group III-nitride transistor and method of providing same
#737Vertical diode in stacked transistor architecture
#738Asymmetrical plug technique for GaN devices
#739COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR DEVICE, AND AMPLIFIER
#740Bipolar transistor and radio-frequency power amplifier module
#741EPITAXIAL STRUCTURE OF GA-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND METHOD FOR FABRICATING THE SAME
#742SUBSTRATE-GATED GROUP III-V TRANSISTORS AND ASSOCIATED FABRICATION METHODS
#743Semiconductor element
#744Method for producing semiconductor device and semiconductor device
#745Method for manufacturing semiconductor device
#746Transistor having low capacitance field plate structure
#747GALLIUM NITRIDE MATERIALS AND METHODS
#748HEMT power device operating in enhancement mode and manufacturing process thereof
#749Reverse direction high-electron-mobility logic devices
#750Enhancement-mode high electron mobility transistor
#751Semiconductor device
#752Semiconductor apparatus including different thermal resistance values for different heat transfer paths
#753Steep slope transistors with threshold switching devices
#754Gallium nitride transistors with source and drain field plates and their methods of fabrication
#755GALLIUM NITRIDE TRANSISTORS WITH DRAIN FIELD PLATES AND THEIR METHODS OF FABRICATION
#756High electron mobility transistor (HEMT) with RESURF junction
#757Digital alloy based back barrier for P-channel nitride transistors
#758Heterojunction bipolar transistor
#759Non-planar semiconductor device including a replacement channel structure
#760SEMICONDUCTOR APPARATUS AND METHOD FOR PRODUCING SAME
#761Semiconductor device and manufacturing method of the same
#762Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
#763Heterojunction bipolar transistor
#764High electron mobility transistors having improved drain current drift and/or leakage current performance
#765Transistors with ion- or fixed charge-based field plate structures
#766Side-by-side integration of III-n transistors and thin-film transistors
#767Stacked integration of III-N transistors and thin-film transistors
#768Electronic Device Including a HEMT Including a Buried Region
#769Touch sensing circuits and methods for detecting touch events
#770MASKLESS PROCESS FOR FABRICATING GATE STRUCTURES AND SCHOTTKY DIODES
#771Semiconductor devices with fluorinated region and methods for forming the same
#772Group III-nitride devices with improved RF performance and their methods of fabrication
#773Method of manufacturing gate structure for gallium nitride high electron mobility transistor
#774III-nitride devices including a graded depleting layer
#775Gallium nitride high electron mobility transistor and gate structure thereof
#776High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS
#777Normally-off transistor with reduced on-state resistance and manufacturing method
#778Heterostructure for a high electron mobility transistor and a method of producing the same
#779Compound semiconductor device and fabrication method therefor, and amplifier
#780High ruggedness heterojunction bipolar transistor
#781Tunable capacitors including III-N multi-2DEG and 3DEG structures for tunable RF filters
#782Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
#783Superlattice FINFET with tunable drive current capability
#784Group III-V semiconductor devices having asymmetric source and drain structures
#785HEMT transistor including an improved gate region and related manufacturing process
#786Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer
#787Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
#788COMPOUND SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND INFRARED DETECTOR
#789Cap layer on a polarization layer to preserve channel sheet resistance
#790Nitride semiconductor substrate
#791Semiconductor device
#792High temperature and high pressure AlGaN/GaN electronics
#793GaN HEMT device structure and method of fabrication
#794Normally-off nitride semiconductor transistor device
#795RAMOsubstrate and method of manufacture thereof, and group III nitride semiconductor
#796Semiconductor device and power amplifier module
#797Semiconductor device and method of fabricating a semiconductor device
#798Enhancement mode gallium nitride based transistor device and manufacturing method thereof
#799Power semiconductor device with an auxiliary gate structure
#800Semiconductor device, method for producing semiconductor device, power supply device, and amplifier
#801Apparatus and circuits including transistors with different polarizations and methods of fabricating the same
#802High electron mobility transistor and method for forming the same
#803High ruggedness heterojunction bipolar transistor structure
#804Semiconductor apparatus
#805Vertical nano-wire complimentary metal-oxide-semiconductor transistor with cylindrical III-V compound and germanium channel
#806Field effect transistor with controllable resistance
#807HEMT device structure and manufacturing method thereof
#808High-voltage p-channel FET based on III-nitride heterostructures
#809Semiconductor device and method of manufacturing the device
#810Device isolation using preferential oxidation of the bulk substrate
#811TRANSISTOR WITH WIDE BANDGAP CHANNEL AND NARROW BANDGAP SOURCE/DRAIN
#812Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#813Integrated circuit components with substrate cavities
#814Apparatus and circuits including transistors with different gate stack materials and methods of fabricating the same
#815Semiconductor device and manufacturing method thereof
#816Parasitic channel mitigation using silicon carbide diffusion barrier regions
#817Metal oxide thin film semiconductor device monolithically integrated with dissimilar device on the same wafer
#818Apparatus and circuits with dual threshold voltage transistors and methods of fabricating the same
#819Semiconductor arrangement and method of manufacture
#820Key-based multi-qubit memory
#821MANUFACTURING METHOD OF HIGH ELECTRON MOBILITY TRANSISTOR
#822Reverse direction high-electron-mobility transistor circuit
#823Lateral III-nitride devices including a vertical gate module
#824Nitride semiconductor device and method for manufacturing the same
#825Enhancement-mode device and method for manufacturing the same
#826Group III-N transistors including source to channel heterostructure design
#827Graded channels for high frequency III-N transistors
#828Bipolar transistor and method for producing the same
#829Self-aligned tunneling field effect transistors
#830GaN lateral vertical HJFET with source-P block contact
#831Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline III-N semiconductor transistor devices
#8323D NAND structures including group III-N material channels
#833Structures and methods for controlling dopant diffusion and activation
#834Methods of manufacturing vertical semiconductor diodes using an engineered substrate
#835Nitride semiconductor device and method for manufacturing same
#836Electronic device including a transistor with a non-uniform 2DEG
#837Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#838III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device
#839Bidirectional transistor having a low resistance heterojunction in an on state
#840III-nitride epitaxial structure
#841Sidewall passivation for HEMT devices
#842Epitaxial layers on contact electrodes for thin- film transistors
#843Semiconductor device
#844Method of fabricating semiconductor device
#845HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
#846Semiconductor device
#847Scalable circuit-under-pad device topologies for lateral GaN power transistors
#848Low resistance source/drain regions in III-V transistors
#849Sub-fin leakage control in semicondcutor devices
#850DOPED BUFFER LAYER FOR GROUP III-V DEVICES ON SILICON
#851Electronic component with a high-electron-mobility heterojunction
#852Transistor connected diodes and connected III-N devices and their methods of fabrication
#853Heterojunction bipolar transistor including ballast resistor and semiconductor device
#854P-I-N diode and connected group III-N device and their methods of fabrication
#855Field effect transistors with wide bandgap materials
#856Structures for providing electrical isolation in semiconductor devices
#857Self-aligned vertical fin field effect transistor with replacement gate structure
#858III-V lateral bipolar junction transistor on local facetted buried oxide layer
#859III-V lateral bipolar junction transistor on local facetted buried oxide layer
#860Semiconductor device and manufacturing method thereof
#861Integrated resistor for semiconductor device
#862Group III-nitride semiconductor device and corresponding fabricating method
#863LOW COLLECTOR CONTACT RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS
#864Semiconductor nanoparticle, semiconductor nanoparticle-containing dispersion liquid, and film
#865Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device
#866Electronic device including a high electron mobility transistor including a gate electrode
#867Vertical tunnel field effect transistor (FET)
#868Epitaxial structure
#869Enhancement/depletion device pairs and methods of producing the same
#870Semiconductor device and method for manufacturing the same
#871Semiconductor device and method for manufacturing the same
#872Semiconductor device, method of manufacturing the same, and electronic device including the device
#873Semiconductor device having a plurality of bipolar transistors with different heights between their respective emitter layers and emitter electrodes
#874Heterojunction semiconductor device for reducing parasitic capacitance
#875Heterostructure of an electronic circuit having a semiconductor device
#876Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
#877Tunnel field-effect transistor with reduced trap-assisted tunneling leakage
#878High electron mobility transistor (HEMT) device and method of forming same
#879Process of forming an electronic device including an access region
#880Fabrication of heterojunction bipolar transistors with a selectively grown collector/sub-collector
#881Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
#882Schottky diode structures and integration with III-V transistors
#883Semiconductor substrate
#884Nanowire transistor structure and method of shaping
#885Work function based approaches to transistor threshold voltage tuning
#886HEMT-compatible lateral rectifier structure
#887Transistor with polarization layer superlattice for target threshold voltage tuning
#888METHODS OF TRANSISTOR GATE STRUCTURING USING SINGLE OPERATION DUMMY GATE REMOVAL
#889Trench semiconductor device having multiple active trench depths and method
#890Vertical nano-wire complimentary metal-oxide-semiconductor transistor with cylindrical III-V compound and germanium channel
#891Semiconductor device having reduced capacitance between source and drain pads
#892METHODS OF FORMING A BIPOLAR TRANSISTOR HAVING A COLLECTOR WITH A DOPING SPIKE
#893Semiconductor device manufacturing method and semiconductor device
#894CHARGE CARRIER TRANSPORT FACILITATED BY STRAIN
#895CONTACT SHAPE ENGINEERING FOR IMPROVED PERFORMANCE IN GAN RF TRANSISTORS
#896Method for manufacturing semiconductor device
#897Doping and trap profile engineering in GaN buffer to maximize AlGaN/GaN HEMT EPI stack breakdown voltage
#898Gallium nitride epitaxial structures for power devices
#899Semiconductor device
#900Lateral bipolar junction transistor with dual base region