208312 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor Field plates
Semiconductor device and fabrication method thereof
#302SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#303Power semiconductor device
#304HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#305Semiconductor device and method of formation
#306GROUP III-NITRIDE TRANSISTORS WITH BACK BARRIER STRUCTURES AND BURIED P-TYPE LAYERS AND METHODS THEREOF
#307Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
#308CIRCUITS AND GROUP III-NITRIDE TRANSISTORS WITH BURIED P-LAYERS AND CONTROLLED GATE VOLTAGES AND METHODS THEREOF
#309SUPERJUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#310LDMOS transistor with implant alignment spacers
#311Wide band gap semiconductor device with surface insulating film
#312SEMICONDUCTOR DEVICE HAVING LOW ON-RESISTANCE AND LOW PARASITIC CAPACITANCE
#313Semiconductor device structure with high voltage device
#314Semiconductor device and method for manufacturing same
#315Semiconductor device
#316FIELD PLATE AND ISOLATION STRUCTURE FOR HIGH VOLTAGE DEVICE
#317Split-gate trench MOSFET
#318GREYSCALE LITHOGRAPHY TECHNIQUES FOR MANUFACTURING FIELD PLATES
#319Semiconductor device
#320SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#321SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
#322Integrated circuit structure with metal gate and metal field plate having coplanar upper surfaces
#323Field effect transistor with multiple stepped field plate
#324High power transistor with interior-fed fingers
#325Scalable high-voltage control circuits using thin film electronics
#326Semiconductor device comprising a doped epitaxial layer and method of manufacturing the same
#327Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
#328Hybrid component with silicon and wide bandgap semiconductor material in silicon recess with nitride spacer
#329Hybrid component with silicon and wide bandgap semconductor material
#330Superjunction semiconductor device and method of manufacturing same
#331HYBRID COMPONENT WITH SILICON AND WIDE BANDGAP SEMCONDUCTOR MATERIAL IN SILICON RECESS
#332Semiconductor device
#333LDMOS transistor and method for manufacturing the same
#334CAPACITANCE NETWORKS FOR ENHANCING HIGH VOLTAGE OPERATION OF A HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD THEREIN
#335HEMT devices with reduced size and high alignment tolerance
#336Field plate structure for high voltage device
#337Lateral double diffused MOS device
#338Gate metal-insulator-field plate metal integrated circuit capacitor and method of forming the same
#339SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#340Semiconductor device and method of manufacturing semiconductor device
#341Method for manufacturing a grid
#342LDMOS having multiple field plates and associated manufacturing method
#343Semiconductor device and method of using
#344Selective single diffusion/electrical barrier
#345Shielding structure for ultra-high voltage semiconductor devices
#346HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND METHOD OF MANUFACTURING THE SAME
#347Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance
#348Ring transistor structure
#349HEMT transistor with adjusted gate-source distance, and manufacturing method thereof
#350High-threshold-voltage normally-off high-electron-mobility transistor and preparation method therefor
#351Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
#352Power device integration on a common substrate
#353ESD PROTECTION DEVICE
#354Semiconductor device and termination structure
#355LDMOS architecture and method for forming
#356Power semiconductor device
#357SEMICONDUCTOR DEVICE
#358Fin field effect transistor with merged drift region
#359Fin-based laterally-diffused metal-oxide semiconductor field effect transistor
#360SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
#361RUGGED LDMOS WITH DRAIN-TIED FIELD PLATE
#362LDMOS with enhanced safe operating area and method of manufacture
#363PASSIVATION STRUCTURES FOR SEMICONDUCTOR DEVICES
#364INTEGRATED SCHOTTKY DIODE WITH GUARD RING
#365Field effect transistor with enhanced reliability
#366LDMOS transistor and manufacturing method thereof
#367Field effect transistor with at least partially recessed field plate
#368Field effect transistor with source-connected field plate
#369High-voltage transistor and method for fabricating the same
#370High electron mobility transistor with doped semiconductor region in gate structure
#371Semiconductor device and manufacturing method thereof
#372III-nitride semiconductor device with non-active regions to shape 2DEG layer
#373Gallium nitride transistor
#374LDMOS transistor having vertical floating field plate and manufacture thereof
#375Nitride semiconductor device and nitride semiconductor package
#376GaN-HEMT device with sandwich structure and method for preparing the same
#377GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
#378Gallium nitride (GAN) three-dimensional integrated circuit technology
#379CO-INTEGRATED GALLIUM NITRIDE (GAN) AND COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) INTEGRATED CIRCUIT TECHNOLOGY
#380SILICON CARBIDE DEVICE WITH STRIPE-SHAPED GATE ELECTRODE AND SOURCE METALLIZATION
#381Laterally-diffused metal-oxide semiconductor transistor and method therefor
#382Structure and method to provide conductive field plate over gate structure
#383Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same
#384Method for forming an insulation layer in a semiconductor body and transistor device
#385Semiconductor device with ring-shaped doped region and manufacturing method thereof
#386Semiconductor devices including a drain captive structure having an air gap and methods of forming the same
#387Threshold voltage adjustment using adaptively biased shield plate
#388Semiconductor device
#389Gallium Nitride-Based Device with Step-Wise Field Plate and Method Making the Same
#390MOS transistor with folded channel and folded drift region
#391Super junction semiconductor device and method of manufacturing the same
#392Dual gate structures for semiconductor devices
#393Method of manufacturing silicon carbide semiconductor devices
#394High electron mobility transistor
#395Method and system of junction termination extension in high voltage semiconductor devices
#396Fin-based laterally diffused structure having a gate with two adjacent metal layers and method for manufacturing the same
#397Fin field effect transistor with field plating
#398METHOD OF DISTRIBUTING METAL LAYERS IN A POWER DEVICE
#399Gate metal formation on gallium nitride or aluminum gallium nitride
#400Apparatus, system and method of a metal-oxide-semiconductor (MOS) transistor including a split-gate structure
#401III-nitride diode with a modified access region
#402finFET with lateral charge balance at the drain drift region
#403Insulated gate bipolar transistor structure and manufacturing method thereof
#404Semiconductor device
#405SUPER JUNCTION POWER DEVICE AND METHOD OF MAKING THE SAME
#406HIGH-VOLTAGE TRANSISTOR HAVING SHIELDING GATE
#407Semiconductor device
#408Field plate structure to enhance transistor breakdown voltage
#409High voltage semiconductor device and manufacturing method of high voltage semiconductor device
#410LDMOS DEVICE AND MANUFACTURING METHOD THEREOF
#411Semiconductor device and method of manufacturing the same
#412Radio frequency (RF) amplifier device on silicon-on-insulator (SOI) and method for fabricating thereof
#413LDMOS architecture and method for forming
#414TRANSISTOR WITH FIELD PLATE OVER TAPERED TRENCH ISOLATION
#415Semiconductor device and power conversion device
#416Power MOSFETs structure
#417Group III-Nitride High-Electron Mobility Transistors Configured with Recessed Source and/or Drain Contacts for Reduced On State Resistance and Process for Implementing the Same
#418Layout techniques and optimization for power transistors
#419Integrated circuit devices with an engineered substrate
#420Thin film transistor, method for fabricating the same, method for controlling the same, display panel and display device
#421Group III nitride device and method of fabricating a Group III nitride-based device
#422Group III nitride-based transistor device having a field plate
#423Semiconductor device
#424Semiconductor device and method for forming the same
#425Field effect transistor and semiconductor device
#426SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
#427Field effect transistor including gradually varying composition channel
#428Integrated device comprising transistor coupled to a dummy gate contact
#429Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices
#430Field plate and isolation structure for high voltage device
#431Vertical metal oxide semiconductor field effect transistor (MOSFET) and a method of forming the same
#432Greyscale lithography for double-slanted gate connected field plate
#433Resistive element and power amplifier circuit
#434III-Nitride transistor with a cap layer for RF operation
#435Structure of semiconductor device and method for fabricating the same
#436Semiconductor device and fabrication method thereof
#437Semiconductor component with edge termination region
#438Semiconductor structure with gate metal layer
#439Method for manufacturing semiconductor device
#440Metal-oxide semiconductor for field-effect transistor having enhanced high-frequency performance
#441Transistor device and method of forming a field plate in an elongate active trench of a transistor device
#442High electron mobility transistor with doped semiconductor region in gate structure
#443Semiconductor device structure having a gate structure and overlying dielectric layer
#444Lateral Schottky diode
#445Transient voltage suppressor and method for manufacturing the same
#446High voltage diode on SOI substrate with trench-modified current path
#447Silicon on insulator semiconductor device with mixed doped regions
#448Semiconductor device
#449Laterally diffused metal oxide semiconductor device and method for manufacturing the same
#450Thin film transistor, and display panel and display apparatus using the same
#451High power device with self-aligned field plate
#452SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND AMPLIFIER
#453Blocking structures on isolation structures
#454GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH GATE CONNECTED BURIED P-TYPE LAYERS AND PROCESS FOR MAKING THE SAME
#455Semiconductor devices and methods of manufacturing the same
#456Semiconductor device structure with high voltage device
#457Laterally-diffused metal-oxide semiconductor transistor and method therefor
#458Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget
#459High Voltage Semiconductor Device with Step Topography Passivation Layer Stack
#460HALF BRIDGE CIRCUIT WITH BOOTSTRAP CAPACITOR CHARGING CIRCUIT
#461Laterally diffused metal oxide semiconductor structure and method for manufacturing the same
#462High-electron mobility transistor and fabrication method thereof
#463Field effect transistor having field plate
#464Field plate structure to enhance transistor breakdown voltage
#465Semiconductor device
#466Field-effect transistor
#467SEMICONDUCTOR DEVICE
#468Electronic device including a junction field-effect transistor
#469Laterally diffused metal-oxide-semiconductor (LDMOS) transistors
#470High voltage semiconductor device and manufacturing method of high voltage semiconductor device
#471Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
#472ESD protection device with breakdown voltage stabilization
#473Breakdown uniformity for ESD protection device
#474Semiconductor device
#475Semiconductor device having reduced capacitance between source and drain pads
#476Semiconductor device and method for manufacturing the same
#477Double-channel HEMT device and manufacturing method thereof
#478Transistor arrangement with a load transistor and a sense transistor
#479Semiconductor device and process of forming the same
#480Vertical metal-air transistor
#481Semiconductor device
#482Integrated schottky diode with guard ring
#483Field plate structure for high voltage device
#484Method for manufacturing semiconductor device
#485Semiconductor device and method of formation
#486Opto-electronic HEMT
#487IGBT DEVICES WITH 3D BACKSIDE STRUCTURES FOR FIELD STOP AND REVERSE CONDUCTION
#488IGBT DEVICES WITH 3D BACKSIDE STRUCTURES FOR FIELD STOP AND REVERSE CONDUCTION
#489Semiconductor structures
#490Lateral double diffused metal oxide semiconductor and method of fabricating same
#491High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
#492Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#493Semiconductor device manufacturing method
#494LDMOS transistor
#495Electronic device including a high electron mobility transistor including a gate electrode and a gate interconnect and a method of using the same
#496Integrated assemblies comprising voids between active regions and conductive shield plates, and methods of forming integrated assemblies
#497Source contact formation of MOSFET with gate shield buffer for pitch reduction
#498Semiconductor device
#499High voltage diode on SOI substrate with trench-modified current path
#500High electron mobility transistors having improved contact spacing and/or improved contact vias
#501Semiconductor device
#502Thin poly field plate design
#503Field effect transistor including gradually varying composition channel
#504Semiconductor device with surface insulating film
#505Integrated assemblies comprising spaces between bitlines and comprising conductive plates operationally proximate the bitlines, and methods of forming integrated assemblies
#506Semiconductor structure with mask structure
#507Semiconductor device including emitter regions and method of manufacturing the semiconductor device
#508Devices with lower resistance and improved breakdown and method for producing the same
#509High voltage tolerant circuit architecture for applications subject to electrical overstress fault conditions
#510Manufacturing method of semiconductor device
#511Field plate structure for high voltage device
#512High electron mobility transistors with charge compensation
#513Enhancement-depletion cascode arrangements for enhancement mode III-N transistors
#514Semiconductor device
#515High power transistor with interior-fed fingers
#516Semiconductor device
#517Semiconductor device and method for fabricating the same
#518Electronic device including a high electron mobility transistor including a gate electrode and a dielectric film
#519Semiconductor device
#520Heterojunction bipolar transistor with field plates
#521Semiconductor devices with a sloped surface
#522Superjunction semiconductor device including parallel PN structures and method of manufacturing thereof
#523Two-dimensional electron gas (2DEG)-confined devices and methods
#524Semiconductor device and method of manufacturing a semiconductor device
#525Semiconductor device
#526Transistors with oxide liner in drift region
#527Method for manufacturing compound semiconductor device
#528Methods for processing high electron mobility transistor (HEMT)
#529Power MOSFETs structure
#530Wide-gap semiconductor device
#531Transistors including first and second semiconductor materials between source and drain regions and methods of manufacturing the same
#532Field effect transistor and semiconductor device
#533Split-gate JFET with field plate
#534LDMOS device and manufacturing method thereof
#535III-nitride field-effect transistor with dual gates
#536Integration of III-N transistors and semiconductor layer transfer
#537GATE STRUCTURES RESISTANT TO VOLTAGE BREAKDOWN
#538Method for manufacturing semiconductor device and semiconductor device
#539Heterojunction bipolar transistors with field plates
#540Threshold voltage adjustment using adaptively biased shield plate
#541Transistor with field plate over tapered trench isolation
#542Power IC including a feedback resistor, and a switching power supply and electronic appliance including the power IC
#543EPITAXIAL STRUCTURE OF GA-FACE GROUP III NITRIDE, ACTIVE DEVICE, AND METHOD FOR FABRICATING THE SAME
#544Multiple-state electrostatically-formed nanowire transistors
#545Transistor having low capacitance field plate structure
#546High-voltage drain expended MOS transistor
#547Schottky barrier diode with improved Schottky contact for high voltages
#548High voltage device
#549SEMICONDUCTOR DEVICE WITH DIELECTRIC NECK SUPPORT AND METHOD FOR MANUFACTURING THE SAME
#550GALLIUM NITRIDE TRANSISTORS WITH DRAIN FIELD PLATES AND THEIR METHODS OF FABRICATION
#551SEMICONDUCTOR APPARATUS AND METHOD FOR PRODUCING SAME
#552Vertical string driver with channel field management structure
#553Method for manufacturing a grid
#554Electronic Device Including a HEMT Including a Buried Region
#555Power switching devices with high dV/dt capability and methods of making such devices
#556LDMOS with high-k drain STI dielectric
#557III-nitride devices including a graded depleting layer
#558Semiconductor device and method of manufacturing semiconductor device
#559Gate driver integrated circuit
#560Integrated circuit with multiple gallium nitride transistor sets
#561Semiconductor device suppressing electric field concentration and method for manufacturing
#562HIGH CONDUCTIVITY SOURCE AND DRAIN STRUCTURE FOR HEMT DEVICES
#563Semiconductor devices and methods for fabricating the same
#564Semiconductor devices having gate electrodes and methods of manufacturing the same
#565Method of manufacturing a semiconductor device having a conductive field plate and a first well
#566Power semiconductor device with an auxiliary gate structure
#567HEMT transistor with adjusted gate-source distance, and manufacturing method thereof
#568Field plate semiconductor device
#569Method of manufacturing silicon carbide semiconductor devices
#570Lateral MOSFET with buried drain extension layer
#571FET operational temperature determination by gate structure resistance thermometry
#572FET operational temperature determination by field plate resistance thermometry
#573Power device
#574Semiconductor device with surface insulating film
#575LDMOS DEVICE WITH A DRAIN CONTACT STRUCTURE WITH REDUCED SIZE
#576Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
#577Semiconductor device and fabrication method thereof
#578LDMOS devices, integrated circuits including LDMSO devices, and methods for fabricating the same
#579Semiconductor device capable of high-voltage operation
#580Methods of manufacturing vertical semiconductor diodes using an engineered substrate
#581Semiconductor device comprising Schottky barrier diodes
#582LDMOS device and method for manufacturing same
#583Method for forming an insulation layer in a semiconductor body and transistor device
#584Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#585Pulsed level shift and inverter circuits for GaN devices
#586TRANSISTOR, PACKAGED DEVICE, AND METHOD OF FABRICATION
#587Semiconductor device and method for controlling semiconductor device
#588Scalable circuit-under-pad device topologies for lateral GaN power transistors
#589Semiconductor device
#590Drift region implant self-aligned to field relief oxide with sidewall dielectric
#591LDMOS device with a field plate contact metal layer with a sub-maximum size
#592ESD guard ring with snapback protection and lateral buried layers
#593Trench isolation interfaces
#594Layered spacer formation for ultrashort channel lengths and staggered field plates
#595Source contact formation of MOSFET with gate shield buffer for pitch reduction
#596Integrated memory comprising gated regions between charge-storage devices and access devices
#597Semiconductor device comprising surface semiconductor region for increased breakdown strength
#598Method for manufacturing semiconductor structure with mask structure
#599Lateral DMOS device with dummy gate
#600Semiconductor device