208312 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor Field plates
Semiconductor device
#602Power semiconductor device having vertically parallel p-n layers formed in an active region under transistor cells and under a non-depletable extension zone formed in the edge region
#603Silicon on insulator semiconductor device with mixed doped regions
#604Composite etch stop layer for contact field plate etching
#605Methodology and structure for field plate design
#606Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#607Heterojunction semiconductor device for reducing parasitic capacitance
#608INTEGRATED CIRCUITS EMPLOYING VARIED GATE TOPOGRAPHY BETWEEN AN ACTIVE GATE REGION(S) AND A FIELD GATE REGION(S) IN A GATE(S) FOR REDUCED GATE LAYOUT PARASITIC CAPACITANCE, AND RELATED METHODS
#609Field structure and methodology
#610GaN circuit drivers for GaN circuit loads
#611Laterally diffused mosfet with locos dot
#612Integrated circuit device
#613Semiconductor device having reduced capacitance between source and drain pads
#614CMOS based devices for harsh media
#615Silicon on insulator semiconductor device with mixed doped regions
#616Transistor with contacted deep well region
#617Nitride semiconductor device
#618Laterally diffused metal oxide semiconductor device and method for manufacturing the same
#619Method for manufacturing laterally diffused metal oxide semiconductor device and semiconductor device
#620Laterally diffused metal oxide semiconductor structure and method for manufacturing the same
#621METHOD OF FORMING A SEMICONDUCTOR DEVICE TERMINATION AND STRUCTURE THEREFOR
#622Asymmetrical blocking bidirectional gallium nitride switch
#623High-power and high-frequency heterostructure field-effect transistor
#624Electronic device and circuit including a transistor and a variable resistor
#625High-voltage GaN high electron mobility transistors with reduced leakage current
#626Contact field plate
#627VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
#628Nanotube semiconductor devices
#629Method for producing a transistor
#630Electronic power devices integrated with an engineered substrate
#631Half bridge circuit with bootstrap capacitor charging circuit
#632Avalanche robust LDMOS
#633High-electron-mobility transistor with buried interconnect
#634Semiconductor device
#635Semiconductor device
#636Vertical gallium nitride Schottky diode
#637Semiconductor packaging structure
#638Nitride semiconductor device
#639Nitride-based electronic device and method for manufacturing same
#640High-voltage transistor devices with two-step field plate structures
#641Semiconductor device
#642Double-channel HEMT device and manufacturing method thereof
#643Semiconductor device and manufacturing method to manufacture semiconductor device
#644Semiconductor device
#645Power semiconductor device and method for manufacturing the same
#646Compound semiconductor device
#647Nitride semiconductor device and nitride semiconductor package
#648Power semiconductor device with an auxiliary gate structure
#649Semiconductor device
#650Power semiconductor device with optimized field-plate design
#651Semiconductor devices with multiple channels and three-dimensional electrodes
#652Semiconductor device and method of manufacturing semiconductor device
#653Low on resistance high voltage metal oxide semiconductor transistor
#654Semiconductor device and method of manufacturing the same
#655Semiconductor device
#656Integrated transistor and protection diode and fabrication method
#657Power MOSFETs and methods for manufacturing the same
#658Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOS
#659Trench isolation interfaces
#660Lateral double diffused MOS transistor
#661Guard rings for cascode gallium nitride devices
#662IGBT DEVICES WITH 3D BACKSIDE STRUCTURES FOR FIELD STOP AND REVERSE CONDUCTION
#663High electron mobility transistor structure and method of making the same
#664Power device integration on a common substrate
#665Blocking structures on isolation structures
#666Power semiconductor devices
#667Semiconductor component with edge termination region
#668Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
#669Electrode structure for field effect transistor
#670Semiconductor structure and manufacturing method thereof
#671Nitride semiconductor device
#672Semiconductor device with a well region
#673LDMOS transistor and method for manufacturing the same
#674Semiconductor device comprising a three-dimensional field plate
#675Devices with lower resistance and improved breakdown and method for producing the same
#676Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
#677Integrated transistor and protection diode and fabrication method
#678SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#679Transistor arrangement with a load transistor and a sense transistor
#680High-voltage drain extended MOS transistor
#681Testing solid state devices before completing manufacture
#682Semiconductor device having buried gate structure and method of fabricating the same
#683III-nitride devices including a graded depleting layer
#684Semiconductor structure having field plate and associated fabricating method
#685Dual gate LDMOS and a process of forming thereof
#686III-nitride field-effect transistor with dual gates
#687Planar Field Effect Transistor
#688Semiconductor device with planar field effect transistor cell
#689LDMOS transistors and associated systems and methods
#690Semiconductor device with surface insulating film
#691Semiconductor device having field plate
#692Semiconductor device
#693Semiconductor device and method for manufacturing the same
#694Hybrid active-field gap extended drain MOS transistor
#695Semiconductor device manufacturing method
#696LDMOS transistor
#697Method for forming a lateral super-junction MOSFET device and termination structure
#698Semiconductor device structure with high voltage device
#699FET transistor on a III-V material structure with substrate transfer
#700Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method
#701Semiconductor device structure and method of manufacture
#702Seal ring structure, semiconductor die, and method for detecting cracks on semiconductor die
#703Blocking structures on isolation structures
#704Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage
#705Semiconductor device with selectively etched surface passivation
#706LDMOS with adaptively biased gate-shield
#707Transistors with oxide liner in drift region
#708High-voltage aluminum nitride (AIN) schottky-barrier diodes
#709High voltage Schottky diode and manufacturing method thereof
#710Semiconductor device capable of high-voltage operation
#711Heterojunction semiconductor device for reducing parasitic capacitance
#712Semiconductor device and method of manufacturing the same
#713Transistor having low capacitance field plate structure
#714Semiconductor device
#715Charge compensation semiconductor devices
#716Low capacitance transient voltage suppressor
#717Methods of forming a vertical semiconductor diode using an engineered substrate
#718MOS-Gated Power Devices, Methods, and Integrated Circuits
#719Horizontal current bipolar transistor with floating field regions
#720Gate stack for heterostructure device
#721High electron mobility transistor (HEMT)
#722Semiconductor device and method for manufacturing the same
#723Isolation PIN diode structure
#724Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside device
#725Enclosed gate runner for eliminating miller turn-on
#726Insulated gate bipolar transistor
#727Semiconductor device
#728Transistor with source field plates under gate runner layers
#729Semiconductor device comprising Schottky barrier diodes
#730Dual gate metal-oxide-semiconductor field-effect transistor
#731Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#732Semiconductor apparatus and method of manufacturing the same
#733LDMOS with high-k drain STI dielectric
#734High-voltage transistor having shielding gate
#735Field-effect transistor and method therefor
#736Semiconductor device and process of forming the same
#737Integrated chip and method of forming the same
#738COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE
#739Electronic device including a drift region
#740Power switching devices with DV/DT capability and methods of making such devices
#741Semiconductor device
#742Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion
#743Power semiconductor device having cells with channel regions of different conductivity types
#744Scalable circuit-under-pad device topologies for lateral GaN power transistors
#745Lateral MOSFET
#746SEMICONDUCTOR DEVICE PRIMARILY MADE OF NITRIDE SEMICONDUCTOR MATERIALS AND PROCESS OF FORMING THE SAME
#747Charge carrier extraction inverse diode
#748Noff III-nitride high electron mobility transistor
#749Pulsed level shift and inverter circuits for GaN devices
#750SCHOTTKY DIODE
#751Termination structure for nanotube semiconductor devices
#752FET OPERATIONAL TEMPERATURE DETERMINATION BY FIELD PLATE RESISTANCE THERMOMETRY
#753FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTANCE THERMOMETRY
#754Enclosed gate runner for eliminating miller turn-on
#755Poly finger fabrication for HCI degradation improvement of ultra-low-Ron EDNMOS
#756Isolation devices with faraday shields
#757Semiconductor device and manufacturing method thereof
#758Semiconductor device with high voltage field effect transistor and junction field effect transistor
#759FIELD EFFECT SEMICONDUCTOR DEVICE WITH SILICON ALLOY REGION IN SILICON WELL AND METHOD FOR MAKING
#760FET with buried gate structure
#761Semiconductor device
#762Trench isolation interfaces
#763High voltage device
#764Heterojunction semiconductor device for reducing parasitic capacitance
#765Semiconductor device and method of manufacturing semiconductor device
#766High-electron-mobility transistor and manufacturing method thereof
#767Semiconductor device including emitter regions and method of manufacturing the semiconductor device
#768Vertical transistor device structure with cylindrically-shaped field plates
#769Power MOSFET with a deep source contact
#770Semiconductor device
#771Heterojunction diode having an increased non-repetitive surge current
#772Method of manufacturing power semiconductor device
#773Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#774Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#775Semiconductor device
#776High-power and high-frequency heretostructure field-effect transistor
#777Method of manufacturing semiconductor device and the semiconductor device
#778Method for modeling excess current in irradiated bipolar junction transistors
#779Integrated gallium nitride based DC-DC converter
#780Method of fabricating a semiconductor structure having at least one recess
#781Field plate power device and method of manufacturing the same
#782Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#783Semiconductor device and power conversion device
#784Nitride semiconductor device
#785Termination structure for gallium nitride Schottky diode including junction barriar diodes
#786Nitride semiconductor device
#787Normally off gallium nitride field effect transistors (FET)
#788Proton radiation as a tool for selective degradation and physics based device model test and calibration
#789Semiconductor device
#790Manufacturing method for high-electron-mobility transistor
#791Vertical gallium nitride Schottky diode
#792Semiconductor device and method of manufacturing semiconductor device
#793Compound semiconductor field effect transistor with self-aligned gate
#794Semiconductor device including an LDMOS transistor and a resurf structure
#795Semiconductor device and method of manufacturing semiconductor device
#796Semiconductor device
#797Method for forming a lateral super-junction MOSFET device and termination structure
#798Schottky diode and method of manufacturing the same
#799Semiconductor device
#800Method of manufacturing semiconductor device
#801Semiconductor device and method of manufacturing the same
#802Guard rings for cascode gallium nitride devices
#803Lateral MOSFET with buried drain extension layer
#804Semiconductor device
#805Method for fabricating semiconductor device
#806Power semiconductor device
#807Production method for semiconductor device
#808Driver for transistor
#809Methodology and structure for field plate design
#810Semiconductor device
#811Semiconductor device and manufacturing method of semiconductor device
#812Semiconductor device
#813Transistor structure with improved unclamped inductive switching immunity
#814Power MOSFET with a deep source contact
#815Sloped field plate and contact structures for semiconductor devices and methods of manufacturing thereof
#816Semiconductor structure having a junction field effect transistor and a high voltage transistor and method for manufacturing the same
#817Cascode circuit having a gate of a low-side transistor coupled to a high-side transistor
#818High-voltage metal-oxide-semiconductor transistor capable of preventing occurrence of exceedingly-large reverse current
#819Transistor with source field plates under gate runner layers
#820Semiconductor device comprising a clamping structure
#821Circuits for and methods of implementing an inductor and a pattern ground shield in an integrated circuit
#822Gallium nitride power amplifier
#823Semiconductor device and method for manufacturing the same
#824Semiconductor device and method of manufacturing semiconductor device
#825Cascoded high voltage junction field effect transistor
#826Vertical power MOSFET and methods for forming the same
#827Integrated circuit chip with molding compound handler substrate and method
#828Silicon Carbide Vertical MOSFET with Polycrystalline Silicon Channel Layer
#829Semiconductor device with surface insulating film
#830High-electron-mobility transistor with buried interconnect
#831Semiconductor device having buried gate structure and method of fabricating the same
#832III-nitride devices including a graded depleting layer
#833Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layers
#834ENHANCEMENT MODE HEMT DEVICE
#835Field-effect transistor having a bypass electrode connected to the gate electrode connection section
#836Semiconductor device and method of manufacturing semiconductor device
#837Apparatus of a metal-oxide-semiconductor (MOS) transistor including a multi-split gate
#838Semiconductor device
#839Lateral DMOS device with dummy gate
#840High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
#841Semiconductor device with a well region
#842Power MOSFETs and methods for manufacturing the same
#843Integrated transistor and protection diode and fabrication method
#844SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#845Electrostatic protection device of LDMOS silicon controlled structure
#846High voltage termination structure of a power semiconductor device
#847Half bridge power conversion circuits using GaN devices
#848Semiconductor device and manufacturing method thereof
#849SINGLE STRUCTURE CASCODE DEVICE
#850Nitride semiconductor device
#851Insulated-gate bipolar transistor (IGBT) including a branched gate trench
#852Semiconductor device
#853Switching field plate power MOSFET
#854Semiconductor device
#855Transient voltage suppressor and method for manufacturing the same
#856Semiconductor circuits, devices and methods
#857Semiconductor device having auxiliary electrode formed in field plate region
#858Semiconductor device and method for manufacturing the same
#859Power MOSFET with metal filled deep source contact
#860Diode, junction field effect transistor, and semiconductor device
#861Vertical Transistor Device Structure with Cylindrically-Shaped Field Plates
#862Power device integration on a common substrate
#863Electronic device including a transistor and a field electrode
#864Method for producing a doped semiconductor layer
#865Electronic power devices integrated with an engineered substrate
#866Vertical semiconductor diode manufactured with an engineered substrate
#867Semiconductor device and manufacturing method thereof
#868Semiconductor devices with charge fixing layers
#869POWER MOSFET, AN IGBT, AND A POWER DIODE
#870Semiconductor device
#871Method and structure for reducing switching power losses
#872Semiconductor device having a non-depletable doping region
#873Electronic device including a dielectric layer having a non-uniform thickness
#874SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#875Heterojunction semiconductor device having source and drain pads with improved current crowding
#876Transistor with contacted deep well region
#877Semiconductor device and method of manufacturing the same
#878Guard rings for cascode gallium nitride devices
#879Compound semiconductor device and method of manufacturing the same
#880Semiconductor devices having segmented ring structures
#881Semiconductor device and method of forming the same
#882Semiconductor device and manufacturing method thereof
#883Lateral insulated gate bipolar transistor
#884Nitride semiconductor device
#885Trench-based power semiconductor devices with increased breakdown voltage characteristics
#886Power semiconductor device with thick top-metal-design and method for manufacturing such power semiconductor device
#887Manufacturing method of semiconductor device having a voltage resistant structure
#888Power semiconductor device having fully depleted channel region
#889Semiconductor device including crystal defect region and method for manufacturing the same
#890Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
#891Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#892Semiconductor Device with Field Dielectric in an Edge Area
#893Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
#894Semiconductor device including an LDMOS transistor and a RESURF structure
#895LDMOS transistor and method
#896Lateral super-junction MOSFET device and termination structure
#897Wide bandgap field effect transistors with source connected field plates
#898Power semiconductor device
#899Diamond on III-nitride device
#900Semiconductor device