208312 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor Field plates
Semiconductor device and method of manufacturing the same
#2402Semiconductor device
#2403High power density and/or linearity transistors
#2404Semiconductor device having improved power density
#2405Dual-gate metal-oxide semiconductor device
#2406Passivation structure with voltage equalizing loops
#2407Field-effect transistor having group III nitride electrode structure
#2408Method and apparatus for controlling a circuit with a high voltage sense device
#2409Lateral double diffused MOS transistors
#2410Semiconductor apparatus and method of manufacturing the same
#2411Solderable top metal for SiC device
#2412Semiconductor device including an LDMOS transistor
#2413Reliable high-voltage junction field effect transistor and method of manufacture therefor
#2414Semiconductor device
#2415Semiconductor device and method for fabricating the same
#2416Semiconductor device and manufacturing method of the same
#2417Method of forming a low capacitance semiconductor device and structure therefor
#2418Lateral MOS device with minimization of parasitic elements
#2419Manufacturing method of semiconductor device
#2420Semiconductor device and method for manufacturing the same
#2421Metal oxide semiconductor device including a shielding structure for low gate-drain capacitance
#2422Recessed semiconductor device
#2423Field-effect transistor
#2424High-voltage transistor having shielding gate
#2425Semiconductor device and manufacturing method thereof
#2426Isolated LDMOS IC technology
#2427Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions
#2428Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell
#2429Fast recovery diode with a single large area p/n junction
#2430Semiconductor device and method of fabricating the same
#2431Power semiconductor device including a terminal structure
#2432Accumulation device with charge balance structure and method of forming the same
#2433Nitride semiconductor device such as transverse power FET for high frequency signal amplification or power control
#2434Method and apparatus for controlling a circuit with a high voltage sense device
#2435Drain extended MOS transistors and methods for making the same
#2436Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
#2437Wide bandgap HEMTs with source connected field plates
#2438III-nitride device passivation and method
#2439Power semiconductor devices
#2440Radiation hardened bipolar junction transistor
#2441Graded conductive structure for use in a metal-oxide-semiconductor device
#2442Laterally diffused MOS transistor having N+ source contact to N-doped substrate
#2443Laterally diffused MOS transistor having source capacitor and gate shield
#2444Power semiconductor device
#2445LDMOS transistor having gate shield and trench source capacitor
#2446LDMOS transistor with improved gate shield
#2447Semiconductor device
#2448Schottky device
#2449Nitride semiconductor device
#2450Semiconductor device
#2451wideband gap power semiconductor device having a low on-resistance and having a high avalanche capability used for power control
#2452Wide bandgap field effect transistors with source connected field plates
#2453Semiconductor device including a channel stop structure and method of manufacturing the same
#2454Semiconductor device, mask for impurity implantation, and method of fabricating the semiconductor device
#2455Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor
#2456Super-junction semiconductor element and method of fabricating the same
#2457Semiconductor device including a channel stop structure and method of manufacturing the same
#2458Trench-gate semiconductor device and method of manufacturing
#2459Trench transistor
#2460Metal-oxide-semiconductor device including a buried lightly-doped drain region
#2461Semiconductor structure including vias
#2462Semiconductor device using a nitride semiconductor
#2463LDMOS transistor with improved ESD protection
#2464Semiconductor device for high frequency uses and manufacturing method of the same
#2465High-voltage vertical transistor with edge termination structure
#2466Power semiconductor devices and methods of manufacture
#2467Radiation hardened MOS structure
#2468Control of hot carrier injection in a metal-oxide semiconductor device
#2469Edge termination in MOS transistors
#2470Method of driving a dual gated MOSFET
#2471Power transistor arrangement and method for fabricating it
#2472Method for improved MOS gating to reduce miller capacitance and switching losses
#2473Forming of the periphery of a schottky diode with MOS trenches
#2474High-voltage vertical transistor with a multi-gradient drain doping profile
#2475Power semiconductor component having a gentle turn-off behavior
#2476Dielectric isolation type semiconductor device and method for manufacturing the same
#2477Metal-oxide-semiconductor device formed in silicon-on-insulator
#2478LDMOS transistor device employing spacer structure gates
#2479Power semiconductor device
#2480Method of fabricating a high-voltage transistor with an extended drain structure
#2481MIS-type semiconductor device
#2482Method of manufacturing semiconductor device
#2483Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
#2484High frequency power transistor device, integrated circuit, and fabrication method thereof
#2485Power semiconductor device used for power control
#2486Metal-oxide-semiconductor device having improved performance and reliability
#2487Insulated gate transistor
#2488Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
#2489Guard ring structure for a Schottky diode
#2490Lateral power MOSFET for high switching speeds
#2491Semiconductor device having periodic construction
#2492Metal-oxide-semiconductor device with enhanced source electrode
#2493Metal-oxide-semiconductor device including a buried lightly-doped drain region
#2494Insulated gate transistor
#2495Offset-gate-type semiconductor device
#2496Cascode amplifier structures including wide bandgap field effect transistor with field plates
#2497Wide bandgap transistor devices with field plates
#2498Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions
#2499Semiconductor circuit arrangement with trench isolation and fabrication method
#2500Integrated circuit with a PN junction diode
#2501Vertical power semiconductor component
#2502Semiconductor device
#2503Semiconductor device and method of manufacturing the same
#2504Methods of forming power semiconductor devices having laterally extending base shielding regions
#2505High-voltage vertical transistor with a multi-layered extended drain structure
#2506Super junction / resurf LDMOST (SJR-LDMOST)
#2507Shielding structure for use in a metal-oxide-semiconductor device
#2508Power semiconductor devices having linear transfer characteristics when regions therein are in velocity saturation modes and methods of forming and operating same
#2509Transistor with implant screen
#2510Radiofrequency device
#2511Embedded non-overlapping source field design for improved GaN HEMT microwave performance
#2512FinFET with lateral charge balance at the drain drift region
#2513Semiconductor structure for wide bandgap normally off MOSFET
#2514Method for making high voltage transistors insensitive to needle defects in shallow trench isolation
#2515Semiconductor device comprising a PN junction diode
#2516Semiconductor device and method for manufacturing the same
#2517GaN structures
#2518Hydrogen diffusion barrier structures for CMOS devices and method of making the same
#2519Lateral high-voltage device
#2520Field-controlled sensor architecture and related methods
#2521Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure
#2522Type III-V semiconductor device with integrated diode
#2523High voltage device and manufacturing method thereof
#2524Electronic device with adjustable reverse breakdown voltage
#2525Extended drain metal-oxide-semiconductor transistor
#2526High voltage integrated circuits having improved on-resistance value and improved breakdown voltage
#2527Semiconductor device having field plate disposed on isolation feature and method for forming the same
#2528Semiconductor device
#2529Field plate for high-voltage field effect transistors
#2530Drift region implant self-aligned to field relief oxide with sidewall dielectric
#2531Etch-based fabrication process for stepped field-plate wide-bandgap
#2532Semiconductor device
#2533Shielded trench semiconductor devices and related fabrication methods
#2534Current sensors and methods of improving accuracy thereof
#2535Manufacturable thin film gallium and nitrogen containing devices
#2536Semiconductor device
#2537Bidirectional trench FET with gate-based resurf
#2538Method of fabricating slanted field-plate GaN heterojunction field-effect transistor
#2539Super junction field effect transistor
#2540Semiconductor device and method of fabricating the same
#2541Etch-based fabrication process for stepped field-plate wide-bandgap
#2542Stepped field plate wide bandgap field-effect transistor and method
#2543Monolithic integration of field-plate and T-gate devices
#2544LDMOS with thick interlayer-dielectric layer
#2545LDMOS with field plate connected to gate