208312 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor Field plates
Semiconductor device and fabrication method of the semiconductor device
#2102Lateral metal oxide semiconductor drain extension design
#2103Dual gate lateral diffused MOS transistor
#2104Semiconductor device and manufacturing method
#2105Switch mode power amplifier using mis-HEMT with field plate extension
#2106Semiconductor device and method of manufacturing the same
#2107ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICE WITH MULTIPLE TERMINALS
#2108Wide bandgap HEMTs with source connected field plates
#2109Method of fabricating a high-voltage transistor with an extended drain structure
#2110Trench-Gate Field Effect Transistors and Methods of Forming the Same
#2111Field effect transistor
#2112Diode with shortened reverse recovery time without reducing impurity concentration
#2113Silicon-germanium-carbon semiconductor structure
#2114Semiconductor device
#2115Power transistor with protected channel
#2116Semiconductor device
#2117Wide bandgap transistor devices with field plates
#2118NAND FLASH PERIPHERAL CIRCUITRY FIELD PLATE
#2119LDMOS transistor
#2120High-voltage transistor and method for its manufacture
#2121Edge termination with improved breakdown voltage
#2122Semiconductor device and manufacturing method of the semiconductor device
#2123Field effect transistor
#2124Semiconductor device
#2125POWER MOSFET
#2126Power device edge termination having a resistor with one end biased to source voltage
#2127High voltage transistor
#2128SEMICONDUCTOR DEVICE WITH AT LEAST ONE FIELD PLATE
#2129Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor
#2130Lateral SOI semiconductor devices and manufacturing method thereof
#2131Planar split-gate high-performance MOSFET structure and manufacturing method
#2132Semiconductor device with dynamical avalanche breakdown characteristics and method for manufacturing a semiconductor device
#2133Semiconductor device and method of forming a semiconductor device
#2134Semiconductor with active component and method for manufacture
#2135Semiconductor Device of Multi-Finger Type
#2136Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device
#2137Insulated gate e-mode transistors
#2138Semiconductor devices having transistors along different orientations
#2139Semiconductor substrate and semiconductor device
#2140SEMICONDUCTOR STRUCTURE WITH FIELD SHIELD AND METHOD OF FORMING THE STRUCTURE
#2141Method and apparatus for controlling a circuit with a high voltage sense device
#2142Dual workfunction silicide diode
#2143Trench MOSFET with implanted drift region
#2144Semiconductor device including a resurf region with forward tapered teeth
#2145Semiconductor device having deep trench charge compensation regions and method
#2146Semiconductor device and method of manufacturing the same
#2147Lateral double diffused MOSFET device
#2148Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain
#2149Manufacturing method of semiconductor device
#2150III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture
#2151Enhancement mode gallium nitride power devices
#2152III-nitride bidirectional switches
#2153High-voltage vertical transistor with a multi-gradient drain doping profile
#2154Thin silicon-on-insulator high voltage transistor with body ground
#2155High-output diamond semiconductor element
#2156Semiconductor device having p-n column portion
#2157High performance power MOS structure
#2158Reliable normally-off III-nitride active device structures, and related methods and systems
#2159Method and layout of semiconductor device with reduced parasitics
#2160Bottom anode Schottky diode structure and method
#2161Integrated Schottky diode and power MOSFET
#2162High voltage semiconductor device with floating regions for reducing electric field concentration
#2163Power semiconductor device having improved performance and method
#2164Vertical MOS transistor and method therefor
#2165Power semiconductor device having an active region and an electric field reduction region
#2166Power semiconductor devices with trenched shielded split gate transistor and methods of manufacture
#2167Power semiconductor device and manufacturing method of the same
#2168Power semiconductor devices with shield and gate contacts and methods of manufacture
#2169Semiconductor apparatus
#2170III-nitride power device
#2171MANUFACTURING METHOD OF HIGH-LINEARITY AND HIGH-POWER CMOS STRUCTURE
#2172SEMICONDUCTOR DEVICE
#2173MOS transistor and method of manufacturing a MOS transistor
#2174HIGH BREAKDOWN ENHANCEMENT MODE GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH INTEGRATED SLANT FIELD PLATE
#2175SEMICONDUCTOR DEVICE
#2176Semiconductor device and method of manufacturing thereof
#2177Semiconductor device
#2178Solderable top metal for silicon carbide semiconductor devices
#2179Method for manufacturing a field effect transistor having a field plate
#2180Nitride semiconductor device
#2181Field effect transistor having field plate electrodes
#2182Semiconductor device with modulated field element isolated from gate electrode
#2183Substrate isolated integrated high voltage diode integrated within a unit cell
#2184Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors
#2185SEMICONDUCTOR STRUCTURE WITH FIELD SHIELD AND METHOD OF FORMING THE STRUCTURE
#2186Semiconductor device having vertical MOSFET
#2187Semiconductor device having enhanced performance and method
#2188Semiconductor device and method for producing it
#2189Semiconductor device
#2190Semiconductor devices having charge balanced structure
#2191SEMICONDUCTOR COMPONENT INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR BODY AND METHOD
#2192Semiconductor device
#2193Ldmos Transistor
#2194Semiconductor component and method for producing it
#2195High breakdown voltage semiconductor circuit device
#2196Insulated gate semiconductor device
#2197High temperature performance capable gallium nitride transistor
#2198Termination trench structure for mosgated device and process for its manufacture
#2199IGFET device having a RF capability
#2200Radio frequency isolation for SOI transistors
#2201ULTRA DENSE TRENCH-GATED POWER DEVICE WITH THE REDUCED DRAIN-SOURCE FEEDBACK CAPACITANCE AND MILLER CHARGE
#2202Structure and method for forming accumulation-mode field effect transistor with improved current capability
#2203Fabrication of semiconductor device having composite contact
#2204Lateral field-effect transistor having an insulated trench gate electrode
#2205Composite contact for semiconductor device
#2206Enhancement mode insulated gate heterostructure field-effect transistor with electrically isolated RF-enhanced source contact
#2207Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices
#2208Power Semiconductor Devices with Barrier Layer to Reduce Substrate Up-Diffusion and Methods of Manufacture
#2209Semiconductor transistor device and method of manufacturing the same
#2210Bipolar Schottky diode and method
#2211Semiconductor device
#2212Dual gate LDMOS device fabrication methods
#2213Power MISFET, semiconductor device and DC/DC converter
#2214COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE
#2215Method of manufacturing a MOSFET structure
#2216Power semiconductor device
#2217Semiconductor structure with field shield and method of forming the structure
#2218Semiconductor device
#2219High-linearity and high-power CMOS structure and manufacturing method for the same
#2220Trenched shield gate power semiconductor devices and methods of manufacture
#2221ULTRA DENSE TRENCH-GATED POWER DEVICE WITH REDUCED DRAIN SOURCE FEEDBACK CAPACITANCE AND MILLER CHARGE
#2222High voltage LDMOS
#2223Methods of making power semiconductor devices with thick bottom oxide layer
#2224High Voltage Shottky Diodes
#2225Power semiconductor devices having termination structures and methods of manufacture
#2226Power semiconductor device
#2227Power semiconductor device
#2228GaN based HEMTs with buried field plates
#2229Bi-directional MOSFET power switch with single metal layer
#2230Surface-stabilized semiconductor device
#2231Semiconductor device
#2232Transistor having field plate
#2233High-voltage vertical transistor with a multi-gradient drain doping profile
#2234Reliable high-voltage junction field effect transistor and method of manufacturing therefor
#2235Semiconductor component having a transition region
#2236Insulated gate semiconductor device and method for producing the same
#2237SEMICONDUCTOR DEVICE
#2238Semiconductor device and method of fabricating the same
#2239Lateral high-voltage devices with optimum variation lateral flux by using field plate
#2240High-voltage lateral DMOS device with diode clamp
#2241High-voltage extended drain MOSFET
#2242High-voltage lateral trench MOSFET
#2243Semiconductor devices including voltage-sustaining space-charge zone and methods of manufacture thereof
#2244Edge termination region for high-voltage bipolar-CMOS-DMOS integrated circuit devices
#2245High-voltage depletion mode MOSFET
#2246High-voltage lateral DMOS device
#2247Dual-gate metal-oxide-semiconductor device
#2248Semiconductor structure formed using a sacrificial structure
#2249Integrated circuit system employing gate shield and/or ground shield
#2250Trenched MOSFET device with trenched contacts
#2251Multi-die DC-DC boost power converter with efficient packaging
#2252Bottom source LDMOSFET structure and method
#2253Field effect transistor having its breakdown voltage enhanced
#2254SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#2255Method of manufacturing semiconductor device having improved RESURF Trench isolation and method of evaluating manufacturing method
#2256Control of hot carrier injection in a metal-oxide semiconductor device
#2257Semiconductor device having superjunction structure and method for manufacturing the same
#2258Semiconductor device
#2259Method of fabricating a high-voltage transistor with an extended drain structure
#2260Semiconductor device having improved breakdown voltage and method of manufacturing the same
#2261High voltage LDMOS
#2262System and method for I/O ESD protection with polysilicon regions fabricated by processes for making core transistors
#2263Semiconductor device having an improved structure for high withstand voltage
#2264High-voltage PMOS transistor
#2265Planar split-gate high-performance MOSFET structure and manufacturing method
#2266High-voltage lateral DMOS device
#2267Semiconductor device having superjunction structure formed of p-type and n-type pillar regions
#2268Gallium nitride material devices and associated methods
#2269SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2270NITRIDE SEMICONDUCTOR DEVICE
#2271Method of manufacturing semiconductor device
#2272Wide bandgap transistor devices with field plates
#2273Power device with improved edge termination
#2274Semiconductor device and method for fabricating the same
#2275Charge balance techniques for power devices
#2276Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices
#2277Forming of the periphery of a schottky diode with MOS trenches
#2278Semiconductor device and a method for producing the same
#2279Power semiconductor device having improved performance and method
#2280Edge termination structure for semiconductor components
#2281Semiconductor device with field insulation film formed therein
#2282Nitride semiconductor device with a hole extraction electrode
#2283Trench gate type MOS transistor semiconductor device
#2284Nitride based transistors for millimeter wave operation
#2285Double-diffused-drain MOS device with floating non-insulator spacers
#2286Total ionizing dose suppression transistor architecture
#2287Lateral power transistor and method for producing same
#2288Isolated LDMOS IC technology
#2289Semiconductor device and method of forming the same having a junction termination structure with a beveled sidewall
#2290Semiconductor devices having improved field plates
#2291Field effect transistor
#2292Methods of fabricating transistors including dielectrically-supported gate electrodes
#2293Semiconductor device and manufacturing method of the semiconductor device
#2294Semiconductor device in which an injector region is isolated from a substrate
#2295Method and apparatus for controlling a circuit with a high voltage sense device
#2296METHOD OF DRIVING A DUAL GATED MOSFET
#2297Semiconductor device module structure
#2298Power LDMOS transistor
#2299Semiconductor device
#2300Trench insulated gate field effect transistor
#2301High-voltage vertical transistor with a multi-gradient drain doping profile
#2302SEMICONDUCTOR DEVICE
#2303Method of forming a low capacitance semiconductor device and structure therefor
#2304Trench insulated gate field effect transistor
#2305Passivation structure with voltage equalizing loops
#2306Semiconductor device
#2307Robust transistors with fluorine treatment
#2308Field-effect transistor
#2309Semiconductor device
#2310Semiconductor device with capacitively coupled field plate
#2311Semiconductor devices with a field shaping region
#2312Single finger gate transistor
#2313Radio frequency power semiconductor device package comprising dielectric platform and shielding plate
#2314Trench IGBT for highly capacitive loads
#2315Semiconductor integrated circuit device and a manufacturing method for the same
#2316Termination structure for a power semiconductor device
#2317Lateral SOI component having a reduced on resistance
#2318Dynamic control of capacitance elements in field effect structures
#2319Insulated gate field effect transistor
#2320Method of forming a low resistance semiconductor contact and structure therefor
#2321LDMOS device and method for manufacturing the same
#2322Fabrication of single or multiple gate field plates
#2323Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage
#2324Power semiconductor device and method therefor
#2325Semiconductor device
#2326Semiconductor device
#2327Thin film transistor, thin film transistor array panel, and display device
#2328DMOSFET and planar type MOSFET
#2329Power semiconductor device
#2330Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and Miller charge
#2331Semiconductor device and capacitance regulation circuit
#2332Semiconductor device and capacitance regulation circuit
#2333Semiconductor circuit arrangement with trench isolation and fabrication method
#2334Semiconductor device having deep trench charge compensation regions and method
#2335Power LDMOS transistor
#2336Power LDMOS transistor
#2337Switch mode power amplifier using MIS-HEMT with field plate extension
#2338Semiconductor device having super junction structure and method for manufacturing the same
#2339High-voltage transistor having shielding gate
#2340Power LDMOS transistor
#2341Semiconductor structure with via structure
#2342METAL-OXIDE-SEMICONDUCTOR DEVICE WITH ENHANCED SOURCE ELECTRODE
#2343Electric device comprising an LDMOS transistor
#2344Semiconductor device and method of manufacturing the same
#2345Compound semiconductor device
#2346Methods of fabricating high voltage devices
#2347Power semiconductor device
#2348Trench-gate field effect transistors and methods of forming the same
#2349Trenched MOSFET device with contact trenches filled with tungsten plugs
#2350Manufacturing process for lateral power MOS transistors
#2351Power semiconductor component with plate capacitor structure
#2352Structure for preventing leakage of a semiconductor device
#2353Structure for leakage prevention of a high voltage device
#2354Semiconductor device and manufacturing method of the same
#2355Stable diodes for low and high frequency applications
#2356Field effect transistor with novel field-plate structure
#2357Semiconductor device having power transistors and Schottky barrier diode
#2358Power MOSFET device structure for high frequency applications
#2359Semiconductor power device with passivation layers
#2360Power semiconductor device having improved performance and method
#2361Junction barrier schottky with low forward drop and improved reverse block voltage
#2362Semiconductor device
#2363Electronic device comprising a field effect transistor for high-frequency applications
#2364Transistor
#2365Semiconductor structure formed using a sacrificial structure
#2366Power semiconductor device and method therefor
#2367Power semiconductor device and method therefor
#2368Semiconductor devices having improved field plates
#2369Semiconductor device and method for manufacturing same
#2370Semiconductor transistor (DMOS) device for use as a power amplifier
#2371Semiconductor device having enhanced performance and method
#2372Semiconductor device and fabrication method of the same
#2373Semiconductor device
#2374Semiconductor device and method for manufacturing same
#2375Termination for SiC trench devices
#2376Semiconductor device, method for manufacturing the same, and gate electrode structure
#2377Power semiconductor devices and methods of manufacture
#2378Power semiconductor devices and methods of manufacture
#2379Semiconductor device having super junction structure
#2380Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer
#2381Wide bandgap transistors with gate-source field plates
#2382Semiconductor device and manufacturing method thereof
#2383Semiconductor device and method for manufacturing the same
#2384Total ionizing dose suppression transistor architecture
#2385MIS-type semiconductor device
#2386Semiconductor device having deep trench charge compensation regions and method
#2387Superjunction semiconductor device structure
#2388Semiconductor device edge termination structure
#2389Field effect transistor and method of manufacturing a field effect transistor
#2390High voltage laterally double-diffused metal oxide semiconductor
#2391III-nitride integrated schottky and power device
#2392Nitride semiconductor device
#2393Radiation hardened bipolar junction transistor
#2394Semiconductor device and method of fabricating the same
#2395LDMOS transistor
#2396Power semiconductor switching element
#2397Dielectric isolation type semiconductor device and method for manufacturing the same
#2398Semiconductor device using a nitride semiconductor
#2399Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film
#2400Metal-oxide-semiconductor device having improved performance and reliability