208313 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Multiple field plate structures
High voltage semiconductor device and method of fabrication
#302Trench field electrode termination structure for transistor devices
#303High electron mobility transistor
#304High density power device with selectively shielded recessed field plate
#305Semiconductor device having thermally conductive electrodes
#306Semiconductor device with conductive members that extend from a semiconductor portion to an upper surface of a semiconductor layer
#307Semiconductor device and manufacturing method thereof
#308HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
#309Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures
#310Trenched MOS Gate Controller Rectifier
#311Termination for vertical trench shielded devices
#312Semiconductor devices and methods for fabricating the same
#313LDMOSFET device and method for making the same
#314Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates in termination
#315Semiconductor device manufacturing method
#316Method for testing a high voltage transistor with a field plate
#317Method of forming a semiconductor device and structure therefor
#318High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
#319Silicon carbide semiconductor device
#320Field effect transistor including gradually varying composition channel
#321Semiconductor device and method of manufacturing semiconductor device
#322Trench gate trench field plate vertical MOSFET
#323Integrated channel diode
#324Semiconductor structure and method for forming the same
#325Semiconductor device with spicular-shaped field plate structures and a current spread region
#326Semiconductor device
#327Semiconductor device and fabrication method thereof
#328Semiconductor device
#329SEMICONDUCTOR DEVICE HAVING POLYSILICON FIELD PLATE FOR POWER MOSFETS
#330Dielectric and isolation lower fin material for fin-based electronics
#331Semiconductor device with sensor for crack detection
#332Miniature field plate T-gate and method of fabricating the same
#333SEMICONDUCTOR APPARATUS
#334METAL TERMINAL EDGE FOR SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
#335High voltage resistor with high voltage junction termination
#336Semiconductor device
#337Method for manufacturing compound semiconductor device
#338Protective insulator for HFET devices
#339Group III nitride semiconductor device with first and second conductive layers
#340Methods for processing high electron mobility transistor (HEMT)
#341Field plate structures with patterned surface passivation layers and methods for manufacturing thereof
#342Transistor device with a field electrode that includes two layers
#343Semiconductor device with equipotential ring electrode
#344Semiconductor device
#345Power semiconductor device and method of processing a power semiconductor device
#346Semiconductor device
#347Threshold voltage adjustment using adaptively biased shield plate
#348Power module and motor drive circuit
#349Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#350Split gate semiconductor with non-uniform trench oxide
#351Semiconductor device
#352Semiconductor device
#353Gallium nitride transistors with source and drain field plates and their methods of fabrication
#354High electron mobility transistor (HEMT) with RESURF junction
#355Process of forming an electronic device including a transistor structure
#356Semiconductor device
#357Transistors with ion- or fixed charge-based field plate structures
#358Vertical trench gate MOSFET with deep well region for junction termination
#359RF device integrated on an engineered substrate
#360RF device integrated on an engineered substrate
#361Semiconductor structures
#362Self-aligned and robust IGBT devices
#363Gate driver integrated circuit
#364Controlled resistance integrated snubber for power switching device
#365Semiconductor device
#366Active matrix substrate, display device, and method of manufacturing active matrix substrate
#367Semiconductor apparatus
#368Semiconductor device with improved current flow distribution
#369Lateral MOSFET with buried drain extension layer
#370FET operational temperature determination by gate structure resistance thermometry
#371FET operational temperature determination by field plate resistance thermometry
#372Variable resistance to reduce gate votlage oscillations in gallium nitride transistors
#373Transistor devices with extended drain regions located in trench sidewalls
#374Semiconductor device with needle-shaped field plate structures
#375Semiconductor device with metallization structure on opposite sides of a semiconductor portion
#376Embedded JFETs for high voltage applications
#377Self aligned gate connected plates for group III-Nitride devices and methods of fabrication
#378Insulated gate bipolar transistor device, manufacturing method for semiconductor device, and manufacturing method for insulated gate bipolar transistor device
#379Semiconductor device with reduced electric field crowding
#380Semiconductor device
#381High voltage semiconductor device and method of fabrication
#382Semiconductor device with an IGBT region and a non-switchable diode region
#383Integration of HVLDMOS with shared isolation region
#384Electronic device comprising a die comprising a high electron mobility transistor
#385Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#386Power transistor device
#387Semiconductor device
#388Needle cell trench MOSFET
#389Semiconductor device
#390Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device
#391Lateral high electron mobility transistor with integrated clamp diode
#392High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
#393Method for manufacturing semiconductor device
#394Power MOSFET with an integrated pseudo-Schottky diode in source contact trench
#395Power semiconductor device
#396Vertical Transistor Device Structure with Cylindrical-Shaped Field Plates
#397Laterally diffused metal oxide semiconductor device and method for manufacturing the same
#398LDMOS transistor and method
#399Asymmetrical blocking bidirectional gallium nitride switch
#400Semiconductor device
#401Semiconductor device
#402High-voltage GaN high electron mobility transistors with reduced leakage current
#403Nanotube semiconductor devices
#404Semiconductor device
#405Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
#406Small pitch super junction MOSFET structure and method
#407Gallium nitride transistor with improved termination structure
#408Transistor structure with depletion-mode and enhancement mode-devices
#409Semiconductor device
#410Semiconductor device having polysilicon field plate for power MOSFETs
#411Dielectric and isolation lower Fin material for Fin-based electronics
#412High voltage switching device
#413High-voltage metal-oxide-semiconductor field effect transistor
#414Semiconductor device
#415Semiconductor device
#416Transistor trench structure with field plate structures
#417Semiconductor devices and methods for fabricating the same
#418Transistor cell
#419Power semiconductor device having a cross-trench arrangement
#420Power semiconductor device with optimized field-plate design
#421Lateral diffused metal oxide semiconductor field effect transistor
#422Power transistor with terminal trenches in terminal resurf regions
#423LDMOS transistors with breakdown voltage clamps
#424Semiconductor device
#425Lateral double diffused MOS transistor
#426Methods and apparatus related to termination regions of a semiconductor device
#427Transistor with source field plates and non-overlapping gate runner layers
#428Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
#429Electrode structure for field effect transistor
#430Semiconductor device comprising a three-dimensional field plate
#431Self-aligned and robust IGBT devices
#432SHIELD WRAP FOR A HETEROSTRUCTURE FIELD EFFECT TRANSISTOR
#433Semiconductor device and manufacturing method thereof
#434Semiconductor device and method of manufacturing the same
#435SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
#436Semiconductor structure having field plate and associated fabricating method
#437Semiconductor device comprising a barrier region
#438Semiconductor device
#439LDMOS transistors and associated systems and methods
#440Superjunction semiconductor device and method of manufacturing the same
#441Transistor device with a field electrode that includes two layers
#442Semiconductor device manufacturing method
#443LDMOS transistor
#444Method for forming a lateral super-junction MOSFET device and termination structure
#445Semiconductor device structure with high voltage device
#446Layout for needle cell trench MOSFET
#447FET transistor on a III-V material structure with substrate transfer
#448INSUPERJUNCTION WITH SURROUNDING LIGHTLY DOPED DRAIN REGION
#449Semiconductor integrated circuit device
#450Power semiconductor device having a field electrode
#451Semiconductor device
#452LDMOS with adaptively biased gate-shield
#453Array boundfary structure to reduce dishing
#454Group III nitride semiconductor device with first and second conductive layers
#455Semiconductor device
#456Semiconductor devices having field electrode trenches
#457Semiconductor device
#458Semiconductor device
#459Electrostatic discharge guard ring with complementary drain extended devices
#460Semiconductor device and method for fabricating a semiconductor device
#461Semiconductor device
#462Charge compensation semiconductor devices
#463Self-Aligned Shielded Trench MOSFETs and Related Fabrication Methods
#464Insulated gate semiconductor device having trench termination structure and method
#465High electron mobility transistor (HEMT)
#466Semiconductor device and method for manufacturing the same
#467Isolation PIN diode structure
#468High voltage termination structure of a power semiconductor device
#469Enclosed gate runner for eliminating miller turn-on
#470Transistor with source field plates under gate runner layers
#471Semiconductor device
#472Dual gate metal-oxide-semiconductor field-effect transistor
#473High-voltage transistor having shielding gate
#474Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#475Semiconductor device
#476Semiconductor device and manufacturing method thereof
#477ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR
#478Semiconductor device
#479Semiconductor device having a triple region resurf structure
#480Semiconductor device
#481High surge bi-directional transient voltage suppressor
#482Noff III-nitride high electron mobility transistor
#483Semiconductor component comprising trench structures and production method therefor
#484Semiconductor device and a manufacturing method therefor
#485Apparatuses for communication systems transceiver interfaces
#486Termination structure for nanotube semiconductor devices
#487Process of forming an electronic device including a transistor structure
#488Protective insulator for HFET devices
#489Enclosed gate runner for eliminating miller turn-on
#490Semiconductor device
#491High-electron-mobility transistor and manufacturing method thereof
#492Trench-gated heterostructure and double-heterostructure active devices
#493Method for manufacturing semiconductor device
#494Fabrication of Trench-Gated Wide-Bandgap Devices
#495Method of manufacturing a semiconductor device including an LDMOS transistor
#496Semiconductor device
#497Lateral diffused metal oxide semiconductor field effect transistor
#498Power semiconductor device with dV/dt controllability and cross-trench arrangement
#499High voltage device and manufacturing method thereof
#500Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region
#501Semiconductor device and power conversion device
#502SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF
#503Multiple stacked field-plated GaN transistor and interlayer dielectrics to improve breakdown voltage and reduce parasitic capacitances
#504Gallium nitride device for high frequency and high power applications
#505Semiconductor device
#506Semiconductor device
#507Semiconductor fabrication methods thereof
#508Enhancement-mode III-nitride devices
#509Semiconductor device and method for manufacturing semiconductor device
#510Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices
#511Semiconductor device
#512Semiconductor device
#513Manufacturing method for high-electron-mobility transistor
#514Field-effect semiconductor device having N and P-doped pillar regions
#515Semiconductor device and method of manufacturing the same
#516Semiconductor device
#517Sensing apparatus
#518SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#519High surge bi-directional transient voltage suppressor
#520Termination region architecture for vertical power transistors
#521Semiconductor device and method of manufacturing the same
#522Semiconductor device
#523Semiconductor device including a gate contact structure
#524IE type trench gate IGBT
#525Method for forming a lateral super-junction MOSFET device and termination structure
#526Schottky diode and method of manufacturing the same
#527SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#528RF device integrated on an engineered substrate
#529IGBT with improved terminal and manufacturing method thereof
#530Field plate trench FET and a semiconductor component
#531Lateral MOSFET with buried drain extension layer
#532High voltage device with multi-electrode control
#533Semiconductor device
#534Semiconductor device having multiple field stop layers
#535LDMOS power semiconductor device and manufacturing method of the same
#536Semiconductor device and method for manufacturing the same
#537Integrated Schottky diode in high voltage semiconductor device
#538Semiconductor device
#539Semiconductor device manufacturing method and semiconductor wafer
#540Semiconductor device and method of manufacturing same
#541Insulated gate bipolar transistor and preparation method therefor
#542Semiconductor device and fabrication method
#543Transistor with source field plates under gate runner layers
#544Transistor with source field plates and non-overlapping gate runner layers
#545Semiconductor Device with an IGBT Region and a Non-Switchable Diode Region
#546Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices
#547Gallium nitride power amplifier
#548Semiconductor device including trenches formed in transistor or diode portions
#549Controlled resistance integrated snubber for power switching device
#550Forming recombination centers in a semiconductor device
#551Semiconductor Device Comprising a Plurality of Transistor Cells and Manufacturing Method
#552Semiconductor substrate and semiconductor device
#553Cascode configured semiconductor component
#554Method of manufacturing a semiconductor device having two types of gate electrodes
#555Lateral high electron mobility transistor with integrated clamp diode
#556Dielectric and isolation lower Fin material for Fin-based electronics
#557SOI power LDMOS device
#558Semiconductor device with metallization structure on opposite sides of a semiconductor portion
#559Ruggedized symmetrically bidirectional bipolar power transistor
#560Nanotube termination structure for power semiconductor devices
#561Semiconductor device
#562Semiconductor device having a trench gate
#563Semiconductor device and semiconductor device manufacturing method
#564Adaptive charge balanced edge termination
#565Power semiconductor device termination structure
#566Semiconductor device
#567Semiconductor device with improved current flow distribution
#568Semiconductor device and manufacturing method thereof
#569Semiconductor device
#570Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device
#571Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
#572Switching field plate power MOSFET
#573COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#574Semiconductor device having auxiliary electrode formed in field plate region
#575Semiconductor device with first and second field electrode structures
#576Semiconductor device including active and dummy cell regions
#577Semiconductor device and manufacturing method
#578METHOD FOR OPERATION OF A FIELD EFFECT TRANSISTOR ARRANGEMENT
#579ASYMMETRICAL BLOCKING BIDIRECTIONAL GALLIUM NITRIDE SWITCH
#580Semiconductor device and method of manufacturing the same
#581Bidirectional JFET and a process of forming the same
#582Method for producing a doped semiconductor layer
#583High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
#584High voltage vertical semiconductor device with multiple pillars in a racetrack arrangement
#585POWER MOSFET, AN IGBT, AND A POWER DIODE
#586High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
#587High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
#588Semiconductor device having a sense IGBT for current detection of a main IGBT
#589Power module and motor drive circuit
#590Electronic device including a HEMT
#591Transistor device with a field electrode that includes two layers
#592Process of forming an electronic device including forming an electronic component and removing a portion of a substrate
#593Self-aligning source, drain and gate process for III-V nitride MISHEMTs
#594Power transistor having perpendicularly-arranged field plates and method of manufacturing the same
#595Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode
#596B-TRAN Geometry and Structure That Provides Both High Gain and High Current Density
#597Semiconductor device with field threshold MOSFET for high voltage termination
#598Power semiconductor device having a field electrode
#599High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
#600Semiconductor device and method of manufacturing the same