208313 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Multiple field plate structures
Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures
#602Contaminant removal in ultra-thin semiconductor device fabrication
#603Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#604Trench gate trench field plate vertical mosfet
#605Power MOSFET semiconductor
#606LDMOS transistor and method
#607LDMOS transistor and method
#608Lateral super-junction MOSFET device and termination structure
#609Semiconductor device
#610Capacitively-coupled field-plate structures for semiconductor devices
#611Semiconductor device comprising a transistor including a first field plate and a second field plate
#612Process of forming an electronic device including a multiple channel HEMT
#613Dynamic ESD protection scheme
#614Method of producing a high-voltage semiconductor drift device
#615Semiconductor device
#616Semiconductor device
#617High-speed diode with crystal defects and method of manufacturing
#618Nanotube semiconductor devices
#619Edge termination designs for super junction device
#620Semiconductor devices and methods for forming semiconductor devices
#621Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage
#622Methods for forming semiconductor devices, semiconductor devices and power semiconductor devices
#623High electron mobility transistor (HEMT)
#624Semiconductor device
#625Semiconductor device with equipotential ring electrode
#626Apparatus and method for controlling doping
#627High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current
#628High-voltage lateral GaN-on-silicon Schottky diode
#629Method for manufacturing an integrated circuit including a lateral trench transistor and a logic circuit element
#630High-voltage GaN high electron mobility transistors
#631FinFET with trench field plate
#632SEMICONDUCTOR DEVICE
#633Protective insulator for HFET devices
#634Trenched MOS gate controlled rectifier
#635Multiple shielding trench gate FET
#636Diode
#637Embedded JFETs for high voltage applications
#638Semiconductor device with non-uniform trench oxide layer
#639Bipolar semiconductor device with sub-cathode enhancement regions
#640Method of manufacturing semiconductor devices with transistor cells and semiconductor device
#641Transistor with bypassed gate structure field
#642Drift-region field control of an LDMOS transistor using biased shallow-trench field plates
#643Semiconductor device capable of high-voltage operation
#644Semiconductor devices and a method for forming a semiconductor device
#645Semiconductor device with insulating section of varying thickness
#646Semiconductor device
#647Termination trench structures for high-voltage split-gate MOS devices
#648Semiconductor device capable of high-voltage operation
#649SEMICONDUCTOR DEVICE
#650Vertical power MOSFET device
#651Semiconductor device having field plate structures, source regions and gate electrode structures between the field plate structures
#652Semiconductor device with vertical field floating rings and methods of fabrication thereof
#653Semiconductor device and method of manufacturing semiconductor device
#654Semiconductor device and method of manufacturing semiconductor device
#655Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions
#656Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region
#657Static discharge system
#658RB-IGBT
#659Methods of manufacturing a power MOSFET
#660High electron mobility transistor and fabrication method thereof
#661Semiconductor device with threshold MOSFET for high voltage termination
#662Semiconductor device and method of manufacturing same
#663Semiconductor structure having field plate and associated fabricating method
#664Semiconductor device and method of manufacturing same
#665Semiconductor device including a lateral transistor
#666Trench gate trench field plate vertical MOSFET
#667Electric circuit including a semiconductor device with a first transistor, a second transistor and a control circuit
#668SEMICONDUCTOR DEVICE
#669Segmented field plate structure
#670Lateral power integrated devices having low on-resistance
#671Semiconductor device with floating field plates
#672High electron mobility transistor
#673Semiconductor device including a heat sink structure
#674Switching device with charge distribution structure
#675Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers
#676Semiconductor device and electric power control apparatus
#677Semiconductor device
#678Enhancement-mode III-nitride devices
#679LDMOS with adaptively biased gate-shield
#680Method for manufacturing semiconductor device
#681IE type trench gate IGBT
#682Semiconductor device and manufacturing method of the same
#683Termination design for high voltage device
#684Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
#685Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area
#686MOSFET having dual-gate cells with an integrated channel diode
#687High-electron-mobility transistor and manufacturing method thereof
#688Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer
#689Semiconductor devices, power semiconductor devices, and methods for forming a semiconductor device
#690Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region
#691Semiconductor device
#692Semiconductor device, power control device and electronic system
#693Lateral high voltage integrated devices having trench insulation field plates and metal field plates
#694VDMOS having shielding gate electrodes in trenches and method of making the same
#695Nitride semiconductor device and manufacturing method thereof
#696SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE
#697Termination region architecture for vertical power transistors
#698Shield wrap for a heterostructure field effect transistor
#699Semiconductor device and method of manufacturing the same
#700Nanotube semiconductor devices
#701Semiconductor device
#702Segmented field plate structure
#703Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts
#704Lateral power MOSFET with non-horizontal RESURF structure
#705High-voltage transistor having shielding gate
#706Vertical high-voltage MOS transistor
#707Semiconductor device and method of manufacturing same
#708Semiconductor device
#709Electronic component and manufacturing method thereof
#710Semiconductor device and method of manufacturing semiconductor device
#711Semiconductor device with contact groove arrangements providing improved performance
#712Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device
#713Method of manufacturing a semiconductor structure and semiconductor device
#714ENHANCEMENT MODE FIELD EFFECT TRANSISTOR WITH DOPED BUFFER AND DRAIN FIELD PLATE
#715Manufacturing method of high-voltage metal-oxide-semiconductor transistor
#716Integrated channel diode
#717Fabrication of single or multiple gate field plates
#718Solid-source diffused junction for fin-based electronics
#719Semiconductor device
#720Field-plate structures for semiconductor devices
#721SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#722Semiconductor device with non-uniform trench oxide layer
#723Vacuum transistor structure using graphene edge field emitter and screen electrode
#724METHODS AND APPARATUS RELATED TO TERMINATION REGIONS OF A SEMICONDUCTOR DEVICE
#725Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode
#726Charge compensation device and manufacturing therefor
#727Lateral super-junction MOSFET device and termination structure
#728High voltage device with multi-electrode control
#729Insulated gate bipolar transistor and manufacturing method therefor
#730Method for manufacturing termination structure of semiconductor device
#731Low miller factor semiconductor device
#732Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench
#733Semiconductor device having first and second gate electrodes
#734Semiconductor device and method of manufacturing the semiconductor device
#735Integrated termination for multiple trench field plate
#736Semiconductor structure and method of forming the same
#737Power MOSFET having planar channel, vertical current path, and top drain electrode
#738High voltage semiconductor device and method of manufacturing the same
#739High voltage field balance metal oxide field effect transistor (FBM)
#740Semiconductor apparatus
#741Semiconductor devices with vertical field floating rings and methods of fabrication thereof
#742Devices, components and methods combining trench field plates with immobile electrostatic charge
#743Transistor with charge enhanced field plate structure and method
#744Semiconductor device and method of fabricating the same
#745Semiconductor structure having a dummy contact and manufacturing method thereof
#746Static discharge system
#747Electromagnetic shield and associated methods
#748Semiconductor device
#749Multiple shielding trench gate FET
#750Half-bridge HEMT circuit and an electronic package including the circuit
#751Bidirectional HEMT and an electronic package including the bidirectional HEMT
#752Lateral/vertical semiconductor device
#753Electronic device including a bidirectional HEMT
#754Geometry for a Bidirectional Bipolar Transistor with Trenches that Surround the Emitter/Collector Regions
#755INTEGRATION OF DEVICES
#756Semiconductor device and method for forming the same
#757Lateral MOSFET with buried drain extension layer
#758Application of thin insulating film layer in semiconductor device and method of manufacturing semiconductor device
#759Field plate trench semiconductor device with planar gate
#760Semiconductor device
#761Nanotube semiconductor devices
#762Semiconductor Device Including a Superjunction Structure with Drift Regions and Compensation Structures
#763Edge termination for semiconductor devices and corresponding fabrication method
#764High-voltage semiconductor device and method of producing the same
#765Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device
#766Semiconductor Device with Gate Fins
#767Semiconductor devices with field plates
#768Power semiconductor device and fabrication method thereof
#769Semiconductor device comprising planar gate and trench field electrode structure
#770Multichannel devices with gate structures to increase breakdown voltage
#771Powers semiconductor device
#772High voltage resistor with high voltage junction termination
#773Semiconductor device having multiple field stop layers
#774Semiconductor device
#775Semiconductor device comprising an isolation trench
#776Field effect transistor
#777Semiconductor device and method of manufacturing the same
#778FIELD PLATE CONFIGURATION OF A SEMICONDUCTOR DEVICE
#779Semiconductor device with first and second field electrode structures
#780Power semiconductor device including well extension region and field-limiting rings
#781Method of manufacturing a device having a shield plate dopant region
#782Power semiconductor device
#783Transistor having gate, first metal-containing material and second metal-containing material with different work functions
#784Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device
#785Semiconductor device provided with an IE type trench IGBT
#786Power MOSFET semiconductor
#787Method of manufacturing a spacer supported lateral channel FET
#788Method of operating a reverse conducting IGBT
#789Superjunction device and semiconductor structure comprising the same
#790Nitride semiconductor device, production method thereof, diode, and field effect transistor
#791MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array
#792Circuit including semiconductor device with multiple individually biased space-charge control electrodes
#793Semiconductor device with varied electrodes
#794FIELD EFFECT TRANSISTOR ARRANGEMENT
#795Semiconductor device with high electron mobility transistor (HEMT) having source field plate
#796SEMICONDUCTOR DEVICE
#797Lateral double diffused MOS transistors
#798Superjunction with surrounding lightly doped drain region
#799Semiconductor device
#800Semiconductor device
#801MOSFET having dual-gate cells with an integrated channel diode
#802Semiconductor device
#803Semiconductor device having field plate structures and gate electrode structures between the field plate structures
#804Semiconductor device and method of manufacture therefor
#805Manufacturing method of semiconductor apparatus and semiconductor apparatus
#806SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
#807Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#808High-electron-mobility transistors
#809Split-gate trench power MOSFET with protected shield oxide
#810LDMOS with adaptively biased gate-shield
#811Transistor device with field-electrode
#812Semiconductor device with low-conducting field-controlling element
#813Method of manufacturing a semiconductor device with lateral FET cells and field plates
#814Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
#815Vertical high-voltage MOS transistor and method of forming the same
#816Semiconductor device with charge compensation region underneath gate trench
#817Laterally-graded doping of materials
#818Semiconductor device
#819Embedded JFETs for high voltage applications
#820Semiconductor component with dynamic behavior
#821Structures and methods with reduced sensitivity to surface charge
#822Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the same
#823Semiconductor device with breakdown preventing layer
#824Semiconductor device and method of manufacturing a semiconductor device using an alignment layer
#825High-voltage normally-off field effect transistor with channel having multiple adjacent sections
#826Integrated circuit with matching threshold voltages and method for making same
#827Semiconductor device and method of manufacturing a semiconductor device
#828Power semiconductor device with source trench and termination trench implants
#829LDMOS power semiconductor device and manufacturing method of the same
#830Semiconductor device
#831Dummy gate for a high voltage transistor device
#832SEMICONDUCTOR DEVICE
#833Semiconductor device
#834Semiconductor device with current sensor
#835SEMICONDUCTOR DEVICE
#836Semiconductor Device with Breakdown Preventing Layer
#837Semiconductor device and method for manufacturing the same
#838Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures
#839Semiconductor device with field electrode structures in a cell area and termination structures in an edge area
#840Devices, components and methods combining trench field plates with immobile electrostatic charge
#841Bootstrap MOS for high voltage applications
#842Edge termination for super-junction MOSFETs
#843Trenched Faraday shielding
#844Bidirectional trench FET with gate-based resurf
#845Semiconductor device with a shielding structure
#846Compound semiconductor device
#847Nitride semiconductor device
#848Semiconductor component and method
#849Electronic device including a channel layer including gallium nitride
#850Static discharge system
#851Semiconductor device having a locally reinforced metallization structure
#852Power MOSFET, an IGBT, and a power diode
#853High voltage GaN transistor
#854Field plate trench transistor and method for producing it
#855Semiconductor device
#856Transistor and circuit using same
#857Vertical power MOSFET having planar channel and its method of fabrication
#858SEMICONDUCTOR DEVICE
#859Power MOSFET with seperate gate and field plate trenches
#860Semiconductor device
#861High-frequency conductor having improved conductivity
#862Field plate structure for power semiconductor device and manufacturing method thereof
#863Manufacturing method of semiconductor apparatus and semiconductor apparatus
#864Semiconductor device with power transistor cells and lateral transistors and method of manufacturing
#865High voltage field balance metal oxide field effect transistor (FBM)
#866Semiconductor device and manufacturing method thereof
#867Semiconductor device
#868Semiconductor device and manufacturing method thereof
#869MOSFET having dual-gate cells with an integrated channel diode
#870Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
#871High electron mobility semiconductor device and method therefor
#872Trench insulated gate bipolar transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
#873Power semiconductor device of stripe cell geometry
#874Semiconductive device and associated method of manufacture
#875Termination structure of semiconductor device and method for manufacturing the same
#876Semiconductor device and method of manufacturing same
#877FET transistor on a III-V material structure with substrate transfer
#878Vertical semiconductor device
#879Semiconductor device with metal-filled groove in polysilicon gate electrode
#880High speed gallium nitride transistor devices
#881Semiconductor device manufacturing method
#882Termination design for high voltage device
#883Power semiconductor device with embedded field electrodes
#884Semiconductor device and method of manufacturing the same
#885Semiconductor device
#886Semiconductor device and manufacturing method for the same
#887High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#888Power semiconductor device with dual field plate arrangement and method of making
#889Semiconductor device
#890Circuit arrangement
#891Method to form stepped dielectric for field plate formation
#892Semiconductor device
#893Heterojunction semiconductor device for reducing parasitic capacitance
#894Semiconductor device and method for manufacturing semiconductor device
#895TRENCH MOSFET WITH SELF-ALIGNED SOURCE AND CONTACT REGIONS USING THREE MASKS PROCESS
#896Structures and methods with reduced sensitivity to surface charge
#897Semiconductor device
#898Semiconductor device
#899Semiconductor device and method for fabricating the same
#900Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same