208313 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Multiple field plate structures
Semiconductor device having breakdown voltage maintaining structure and its manufacturing method
#1202High-voltage MOS transistor device
#1203High-voltage MOS transistor device
#1204Semiconductor component with dynamic behavior
#1205Semiconductor component and method for producing it
#1206Semiconductor apparatus
#1207MOS transistor and method of manufacturing a MOS transistor
#1208Field effect transistor having field plate electrodes
#1209Semiconductor device and method for producing it
#1210High temperature performance capable gallium nitride transistor
#1211Structure and method for forming accumulation-mode field effect transistor with improved current capability
#1212Semiconductor chip and shielding structure thereof
#1213Semiconductor device
#1214Lateral semiconductor component with a drift zone having at least one field electrode
#1215SEMICONDUCTOR APPARATUS
#1216Semiconductor device and method for manufacturing the same
#1217Power semiconductor device
#1218Bi-directional MOSFET power switch with single metal layer
#1219Trenched MOSFET device configuration with reduced mask processes
#1220Termination Structures For Semiconductor Devices and the Manufacture Thereof
#1221High voltage GaN transistors
#1222Semiconductor device
#1223SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME
#1224Semiconductor device preventing recovery breakdown and manufacturing method thereof
#1225Gallium nitride high electron mobility transistor having inner field-plate for high power applications
#1226Lateral high-voltage devices with optimum variation lateral flux by using field plate
#1227Semiconductor component having a space saving edge structure
#1228Power semiconductor component
#1229Method for manufacturing semiconductor device
#1230LDMOS using a combination of enhanced dielectric stress layer and dummy gates
#1231Reverse blocking semiconductor device and a method for manufacturing the same
#1232Semiconductor device having superjunction structure formed of p-type and n-type pillar regions
#1233Semiconductor device and method for manufacture
#1234High efficiency and/or high power density wide bandgap transistors
#1235Semiconductor device having a DMOS structure
#1236Nitride semiconductor device with a hole extraction electrode
#1237Semiconductor device and method of manufacturing the same
#1238Semiconductor device
#1239FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT
#1240Dual field plate MESFET
#1241Semiconductor chip and shielding structure thereof
#1242Trench structure semiconductor device and method for producing it
#1243Lateral thin-film SOI device having a field plate with isolated metallic regions
#1244Trench transistor and method for fabricating a trench transistor
#1245Integrated circuit having a multipurpose resistor for suppression of a parasitic transistor or other purposes
#1246Power semiconductor device and method for manufacturing the same
#1247Termination structure for a power semiconductor device
#1248Lateral SOI component having a reduced on resistance
#1249Dynamic control of capacitance elements in field effect structures
#1250SOI semiconductor component with increased dielectric strength
#1251Fabrication of single or multiple gate field plates
#1252Ultra high voltage MOS transistor device
#1253Trench semiconductor device of improved voltage strength, and method of fabrication
#1254High-voltage transistor having shielding gate
#1255Semiconductor device with multi-trench separation region and method for producing the same
#1256Terminations for semiconductor devices with floating vertical series capacitive structures
#1257Edge structure with voltage breakdown in the linear region
#1258Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction
#1259Semiconductor power device with passivation layers
#1260Semiconductor device having field stabilization film and method
#1261Semiconductor device
#1262Vertical unipolar component
#1263Wide bandgap transistors with gate-source field plates
#1264Semiconductor device and manufacturing method thereof
#1265Reverse blocking semiconductor device and a method for manufacturing the same
#1266Field effect transistor and method of manufacturing a field effect transistor
#1267Diode having low forward voltage drop
#1268Method of forming schottky diode with charge balance structure
#1269Power semiconductor switching element
#1270Semiconductor device and junction termination structure
#1271High-voltage transistor having shielding gate
#1272Accumulation device with charge balance structure and method of forming the same
#1273Nitride semiconductor device such as transverse power FET for high frequency signal amplification or power control
#1274Lateral semiconductor component with a drift zone having at least one field electrode
#1275Graded conductive structure for use in a metal-oxide-semiconductor device
#1276Deep trench super switch device
#1277Nitride semiconductor device
#1278Dielectric isolation type semiconductor device
#1279Wide bandgap transistors with multiple field plates
#1280Passivation of power semiconductor device
#1281Self aligned contact in a semiconductor device and method of fabricating the same
#1282Semiconductor device with high breakdown voltage
#1283Semiconductor device
#1284Power semiconductor device
#1285Semiconductor device
#1286Vertical power semiconductor component
#1287Structure including multi-level field plate and method of forming the structure
#1288Electrical performance and reliability of a semiconductor device comprising continuous diffusion structures
#1289Method of manufacture of super-junction power semiconductor device
#1290Semiconductor device, method of manufacturing the same and power conversion device
#1291Embedded field plate field effect transistor
#1292GaN device with floating field plates
#1293Superjunction power semiconductor device and method for forming
#1294Nitride semiconductor device
#1295High-voltage metal-oxide-semiconductor transistor device
#1296Transistor with source field plates under gate runner layers
#1297Electronic device including a multiple channel HEMT and an insulated gate electrode
#1298Protective insulator for HFET devices
#1299Semiconductor device with graded drift region
#1300Trench MOSFET with shielded gate and diffused drift region
#1301Semiconductor device with multiple carrier channels
#1302Integrated high performance lateral schottky diode
#1303Semiconductor structure
#1304Lateral super-junction MOSFET device and termination structure
#1305High voltage vertical FPMOS fets
#1306Multiple shielding trench gate fet
#1307High-electron-mobility transistors
#1308Bidirectional trench FET with gate-based resurf
#1309LDMOS with field plate connected to gate