208313 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Multiple field plate structures
Semiconductor devices with field plates
#902Superjunction structures for power devices
#903Semiconductor device with an electric field reduction mechanism in an edge termination region surrounding the active region
#904Manufacturing method of semiconductor structure
#905Schottky diode with buried layer in GaN materials
#906Semiconductor device and method for manufacturing the same
#907Semiconductor device
#908Field effect transistor and method of fabricating the same
#909Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body
#910Semiconductor device including a MOSFET and having a super-junction structure
#911Nanotube semiconductor devices
#912Lateral diffused semiconductor device with ring field plate
#913FinFET with trench field plate
#914Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereof
#915Semiconductor device having a locally reinforced metallization structure and method for manufacturing thereof
#916Superjunction device and semiconductor structure comprising the same
#917Method of operating a reverse conducting IGBT
#918Semiconductor device
#919Semiconductor device with multiple space-charge control electrodes
#920Semiconductor device
#921Super junction semiconductor device
#922Superjunction structures for power devices and methods of manufacture
#923Method for manufacturing semiconductor device using a gettering layer
#924Power semiconductor package with gate and field electrode leads
#925Semiconductor device and method of manufacturing the same
#926Semiconductor device
#927Semiconductor devices with guard rings
#928Inhomogeneous power semiconductor devices
#929Semiconductor device and semiconductor device manufacturing method
#930Semiconductor device
#931Semiconductor device having a surface with ripples
#932Field device and method of operating high voltage semiconductor device applied with the same
#933Device and method for a LDMOS design for a FinFET integrated circuit
#934Semiconductor component with dynamic behavior
#935Insulated gate bipolar transistor with high emitter gate capacitance
#936Device structure and methods of forming superjunction lateral power MOSFET with surrounding LDD
#937Semiconductor device, and a method of improving breakdown voltage of a semiconductor device
#938Semiconductor device
#939Semiconductor device
#940Semiconductor arrangement with active drift zone
#941Semiconductor device with termination region having floating electrodes in an insulating layer
#942Semiconductor device with self-charging field electrodes
#943Power semiconductor device with contiguous gate trenches and offset source trenches
#944Semiconductor device
#945Semiconductor device including a drift zone and a drift control zone
#946Semiconductor device
#947High-voltage transistor device and production method
#948Guarding ring structure of a high voltage device and manufacturing method thereof
#949Semiconductor device and method of manufacturing semiconductor device
#950Semiconductor device with charge compensation
#951Method to form stepped dielectric for field plate formation
#952Semiconductor structure and method for manufacturing the same
#953Semiconductor device
#954Termination design for nanotube MOSFET
#955Composite One-Piece IGBT Device and Producing Method Thereof
#956High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#957Semiconductor device
#958Multi-source JFET device
#959High-current N-type silicon-on-insulator lateral insulated-gate bipolar transistor
#960Semiconductor device and manufacturing method thereof
#961Perforated channel field effect transistor
#962SEMICONDUCTOR DEVICE
#963Field plate trench transistor and method for producing it
#964Strip-ground field plate
#965Termination region of a semiconductor device
#966High electron mobility semiconductor device and method therefor
#967Transistor with charge enhanced field plate structure and method
#968Trench gated power device with multiple trench width and its fabrication process
#969Method of manufacturing semiconductor device and semiconductor device
#970Bootstrap MOS for high voltage applications
#971LDMOS power semiconductor device and manufacturing method of the same
#972Termination design for high voltage device
#973Power semiconductor device
#974Customized shield plate for a field effect transistor
#975Adaptive charge balanced MOSFET techniques
#976Semiconductor device
#977Semiconductor devices with field plates
#978High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
#979Semiconductor device
#980Power semiconductor device and method for manufacturing the same
#981Semiconductor device and method of manufacturing a semiconductor device
#982Semiconductor device
#983Embedded JFETs for high voltage applications
#984High-voltage transistor having shielding gate
#985Semiconductor device, method for manufacturing the semiconductor device, and method for controlling the semiconductor device
#986Field plate assisted resistance reduction in a semiconductor device
#987Semiconductor structure
#988Semiconductor device with breakdown preventing layer
#989Field device and method of operating high voltage semiconductor device applied with the same
#990Semiconductor device and method of manufacturing semiconductor device
#991Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process
#992Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region
#993MOS transistor
#994Bidirectional field effect transistor and method
#995Lateral semiconductor device
#996HIGH VOLTAGE DEVICE
#997Semiconductor structure for antenna switching circuit
#998High voltage field balance metal oxide field effect transistor (FBM)
#999Termination design for high voltage device
#1000Dummy gate for a high voltage transistor device
#1001FinFET with trench field plate
#1002Semiconductor arrangement having a Schottky diode
#1003Static discharge system
#1004Semiconductor Device and Method for Producing a Doped Semiconductor Layer
#1005SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE
#1006Reverse Conducting IGBT
#1007Integrated power semiconductor component, production method and chopper circuit comprising integrated semiconductor component
#1008Semiconductor device
#1009Adaptive charge balanced edge termination
#1010HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE
#1011Power semiconductor device and edge terminal structure thereof including an L-shaped electric-plate
#1012Embedded JFETs for high voltage applications
#1013High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
#1014Semiconductor Devices Including Superjunction Structure and Method of Manufacturing
#1015Semiconductor device having a diffusion region
#1016Schottky diode with enhanced breakdown voltage
#1017Semiconductor structure and method of manufacturing the same
#1018Corner layout for superjunction device
#1019High speed gallium nitride transistor devices
#1020Staggered column superjunction
#1021Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor body
#1022Power MOSFET
#1023Power semiconductor device
#1024Semiconductor field effect power switching device
#1025Apparatus and method for high voltage MOS transistor
#1026Power MOSFET semiconductor
#1027High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
#1028Nano-tube MOSFET technology and devices
#1029Semiconductor structure and method of forming the same
#1030Semiconductor device
#1031Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#1032Semiconductor arrangement with active drift zone
#1033Lateral double diffused MOS transistors and methods of fabricating the same
#1034High voltage MOSFET device
#1035Semiconductor device
#1036Semiconductor diode and method for forming a semiconductor diode
#1037TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS
#1038Fabrication of floating guard rings using selective regrowth
#1039Dummy gate for a high voltage transistor device
#1040Shield wrap for a heterostructure field effect transistor
#1041Field plate configuration of a semiconductor device
#1042Compound semiconductor device with buried field plate
#1043Semiconductor device
#1044Customized shield plate for a field effect transistor
#1045IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES
#1046Edge termination for super junction MOSFET devices
#1047Trench Schottky diode and method for manufacturing the same
#1048Semiconductor device with low-lifetime region
#1049Semiconductor apparatus
#1050Superjunction semiconductor device
#1051Schottky diode with buried layer in GaN materials
#1052Method and system for floating guard rings in gallium nitride materials
#1053NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
#1054Semiconductor device
#1055Semiconductor device having lateral element
#1056Semiconductor device comprising a breakdown withstanding section
#1057Semiconductor device
#1058POWER SEMICONDUCTOR DEVICE
#1059Semiconductor device and method of manufacturing the same
#1060Integrated circuit device
#1061Semiconductor Device with Low-Conducting Field-controlling Element
#1062Semiconductor devices with guard rings
#1063High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
#1064Structure of NPN-BJT for improving punch through between collector and emitter
#1065Power MOSFET, an IGBT, and a power diode
#1066Field effect transistor for sensing deformation
#1067High-voltage transistor device
#1068High voltage resistor with high voltage junction termination
#1069Semiconductor device with field threshold MOSFET for high voltage termination
#1070Nanotube semiconductor devices and nanotube termination structures
#1071Superjunction device and method for manufacturing the same
#1072Trench gated power device with multiple trench width and its fabrication process
#1073High-voltage semiconductor device with electrostatic discharge protection
#1074Electromagnetic shield and associated methods
#1075Semiconductor device
#1076High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#1077Method of manufacturing semiconductor device and semiconductor device
#1078Monolithic metal oxide semiconductor field effect transistor-Schottky diode device
#1079Superjunction structures for power devices and methods of manufacture
#1080HIGH ELECTRON MOBILITY TRANSISTOR
#1081Superjunction Structures for Power Devices and Methods of Manufacture
#1082Superjunction structures for power devices and methods of manufacture
#1083Superjunction structures for power devices and methods of manufacture
#1084Superjunction structures for power devices and methods of manufacture
#1085Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel
#1086FIELD PLATE AND CIRCUIT THEREWITH
#1087Semiconductor device
#1088Semiconductor device and method for manufacturing same
#1089High electron mobility transistor circuit
#1090High temperature performance capable gallium nitride transistor
#1091High voltage GaN transistor
#1092Semiconductor device limiting electrical discharge of charge
#1093Semiconductor field effect power switching device
#1094Split-gate lateral diffused metal oxide semiconductor device
#1095Low noise amplifiers including group III nitride based high electron mobility transistors
#1096Semiconductor device
#1097Edge termination with improved breakdown voltage
#1098HV interconnection solution using floating conductors
#1099Method for forming accumulation-mode field effect transistor with improved current capability
#1100Semiconductor device with reduced potential between adjacent floating regions
#1101Semiconductor power device having a super-junction structure
#1102Semiconductor component with a space saving edge structure
#1103Method of manufacturing a field-effect transistor
#1104SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1105Manufacturing method of semiconductor apparatus and semiconductor apparatus
#1106Semiconductor device having a split gate and a super-junction structure
#1107Semiconductor apparatus
#1108SEMICONDUCTOR DEVICE WITH LATERAL ELEMENT
#1109Semiconductor device with superjunction structure
#1110FABRICATING HIGH VOLTAGE TRANSISTORS IN A LOW VOLTAGE PROCESS
#1111Semiconductor device
#1112Dummy gate for a high voltage transistor device
#1113Ultra high voltage MOS transistor device
#1114High voltage MOS device and method for making the same
#1115Semiconductor device
#1116Semiconductor device
#1117Semiconductor device
#1118Semiconductor device
#1119SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1120Semiconductor device having an edge termination structure and method of manufacture thereof
#1121SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1122Power MOSFET semiconductor device
#1123Semiconductor transistor comprising two electrically conductive shield elements
#1124Terminal structure for superjunction device and method of manufacturing the same
#1125Trench MOS device with improved termination structure for high voltage applications
#1126HEMT semiconductor component with field plates
#1127Semiconductor device and method of manufacturing semiconductor device
#1128Semiconductor device and a method of manufacturing the same
#1129Corner layout for superjunction device
#1130High-voltage transistor having shielding gate
#1131Semiconductor device having a plurality of spaced-apart field plates formed on a field insulating film
#1132Nano-tube MOSFET technology and devices
#1133Devices, components and methods combining trench field plates with immobile electrostatic charge
#1134Semiconductor device exhibiting withstand voltages in the forward and reverse directions
#1135High voltage semiconductor device including a free wheel diode
#1136Semiconductor device and power conversion apparatus using the same
#1137LDMOS having a field plate
#1138High voltage GaN transistors
#1139Staggered column superjunction
#1140Field plate trench transistor and method for producing it
#1141Lateral HEMT and method for the production of a lateral HEMT
#1142Semiconductor device and method for manufacturing the same
#1143Semiconductor device
#1144Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection
#1145Configurable NP channel lateral drain extended MOS-based transistor
#1146High voltage MOSFET diode reverse recovery by minimizing P-body charges
#1147Semiconductor device having SOI substrate
#1148Semiconductor device
#1149Ultra high voltage MOS transistor device
#1150Semiconductor device and method of manufacturing the same
#1151Semiconductor devices with field plates
#1152LDMOS using a combination of enhanced dielectric stress layer and dummy gates
#1153Power semiconductor component including a potential probe
#1154Fabrication of single or multiple gate field plates
#1155SEMICONDUCTOR DEVICE
#1156Trench schottky diode and method for manufacturing the same
#1157Power semiconductor device and method for manufacturing the same
#1158Nitride semiconductor device
#1159Nanotube semiconductor devices
#1160Trench MOSFET semiconductor device and manufacturing method therefor
#1161Laterally diffused metal oxide semiconductor (LDMOS) device with multiple gates and doped regions
#1162Semiconductor device
#1163Field effect transistor having a plurality of field plates
#1164Semiconductor device and method for fabricating the same
#1165Semiconductor device
#1166IGBT semiconductor device
#1167Semiconductor device having a junction of P type pillar region and N type pillar region
#1168Semiconductor device
#1169Semiconductor device
#1170Nano-tube MOSFET technology and devices
#1171Semiconductor device
#1172SEMICONDUCTOR DEVICE
#1173Semiconductor device
#1174Configuration of trenched semiconductor power device to reduce masked process
#1175High voltage GaN transistors
#1176Semiconductor device
#1177Bipolar Junction Transistor with a Reduced Collector-Substrate Capacitance
#1178Semiconductor device
#1179Edge termination for semiconductor device
#1180Wide bandgap transistors with multiple field plates
#1181Gallium nitride high electron mobility transistor having inner field-plate for high power applications
#1182Semiconductor device with multi-trench separation region
#1183Field effect transistor
#1184Field effect transistor
#1185Edge termination with improved breakdown voltage
#1186Trench transistor and method for fabricating a trench transistor
#1187Semiconductor device and method of manufacturing same
#1188SEMICONDUCTOR DEVICE WITH AT LEAST ONE FIELD PLATE
#1189Power semiconductor component with trench-type second contact region
#1190Trench semiconductor device of improved voltage strength
#1191Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection
#1192DMOS with high source-drain breakdown voltage, small on- resistance, and high current driving capacity
#1193Semiconductor device and method of manufacturing the same
#1194Field plate trench transistor and method for producing it
#1195High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof
#1196Vertical power semiconductor device with high breakdown voltage corresponding to edge termination and device regions
#1197Superjunction structures for power devices
#1198Edge termination for high voltage semiconductor device
#1199Ultra high voltage MOS transistor device
#1200Semiconductor device and method of forming a semiconductor device