208315 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Recessed field plates, e.g. trench field plates, buried field plates
Semiconductor device, semiconductor device manufacturing method, and power conversion apparatus
#902IGBT with dV/dt controllability
#903Semiconductor device having a field electrode and a gate electrode in a trench structure and manufacturing method
#904Semiconductor device
#905High surge bi-directional transient voltage suppressor
#906Semiconductor device and method of manufacturing the same
#907Semiconductor device with transistor cells and enhancement cells with delayed control signals
#908Method for processing a semiconductor workpiece and semiconductor device
#909Semiconductor device
#910Semiconductor device
#911Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#912Semiconductor device
#913Method of manufacturing semiconductor device using photoresist as ion implantation mask
#914IE type trench gate IGBT
#915Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands
#916SEMICONDUCTOR DEVICE
#917Schottky diode and method of manufacturing the same
#918IGBT with improved terminal and manufacturing method thereof
#919Field plate trench FET and a semiconductor component
#920Semiconductor device
#921Insulated gate bipolar transistors and fabrication methods thereof
#922Power transistor with terminal trenches in terminal resurf regions
#923Semiconductor device with different gate trenches
#924Semiconductor device and manufacturing method thereof
#925Method of manufacturing a semiconductor device
#926Semiconductor device
#927Semiconductor device
#928Methodology and structure for field plate design
#929Nitride semiconductor device including a horizontal switching device
#930Transistor structure with improved unclamped inductive switching immunity
#931LDMOS power semiconductor device and manufacturing method of the same
#932Semiconductor device and method for manufacturing the same
#933Semiconductor device having a transistor and a conductive plate
#934Semiconductor device
#935Semiconductor device
#936Semiconductor structure and fabrication method thereof
#937Semiconductor device and method of manufacturing same
#938Insulated gate bipolar transistor and preparation method therefor
#939Semiconductor Device with an IGBT Region and a Non-Switchable Diode Region
#940Trench gate IGBT
#941Semiconductor device including trenches formed in transistor or diode portions
#942Controlled resistance integrated snubber for power switching device
#943Semiconductor Device Comprising a Plurality of Transistor Cells and Manufacturing Method
#944Semiconductor substrate and semiconductor device
#945Cascode configured semiconductor component
#946Semiconductor device with surface insulating film
#947Semiconductor device having termination trench
#948Semiconductor device with diode region and trench gate structure
#949Semiconductor device having an emitter region and a contact region inside a mesa portion
#950Semiconductor device, RC-IGBT, and method of manufacturing semiconductor device
#951TRENCH GATE IGBT
#952Method for manufacturing a semiconductor device
#953Semiconductor device
#954Semiconductor device with separation regions
#955Semiconductor device having isolation structure in well of substrate
#956Semiconductor device
#957Semiconductor device with voltage resistant structure
#958Monolithic series switching semiconductor device having low-resistance substrate contact structure and method
#959Semiconductor device
#960Trench transistors and methods with low-voltage-drop shunt to body diode
#961Semiconductor device including sense insulated-gate bipolar transistor
#962Semiconductor device
#963Memory cell
#964Semiconductor device with metallization structure on opposite sides of a semiconductor portion
#965Ruggedized symmetrically bidirectional bipolar power transistor
#966Methods of manufacturing a semiconductor device with a buried doped region and a contact structure
#967Semiconductor device having a trench gate
#968Semiconductor device and semiconductor device manufacturing method
#969Semiconductor device
#970Semiconductor device including transistor device
#971Semiconductor device
#972Semiconductor device with improved current flow distribution
#973Semiconductor device and manufacturing method thereof
#974SINGLE STRUCTURE CASCODE DEVICE
#975Insulated-gate bipolar transistor (IGBT) including a branched gate trench
#976Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device
#977Semiconductor device
#978Process of forming an electronic device including exposing a substrate to an oxidizing ambient
#979Semiconductor device and manufacturing method of the same
#980Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
#981Semiconductor device having auxiliary electrode formed in field plate region
#982Semiconductor device
#983Semiconductor device and method for manufacturing the same
#984Semiconductor device
#985Semiconductor device with first and second field electrode structures
#986Semiconductor device and method of manufacturing the same
#987Semiconductor device including active and dummy cell regions
#988VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices
#989Semiconductor device and manufacturing method
#990Power MOSFET with metal filled deep source contact
#991Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same
#992Semiconductor device and method for producing the same
#993Semiconductor device
#994Semiconductor device and method for manufacturing the same
#995PowerMOS
#996Semiconductor device and method of manufacturing the same
#997Narrow active cell IE type trench gate IGBT and a method for manufacturing a narrow active cell IE type trench gate IGBT
#998Vertical Transistor Device Structure with Cylindrically-Shaped Field Plates
#999Semiconductor device
#1000Bidirectional JFET and a process of forming the same
#1001Method for producing a doped semiconductor layer
#1002High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
#1003High voltage vertical semiconductor device with multiple pillars in a racetrack arrangement
#1004Semiconductor device and manufacturing method thereof
#1005High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
#1006High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
#1007Semiconductor device with an insulated-gate bipolar transistor region and a diode region
#1008Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit
#1009Semiconductor device having a sense IGBT for current detection of a main IGBT
#1010Transistor device with a field electrode that includes two layers
#1011Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device
#1012Power transistor having perpendicularly-arranged field plates and method of manufacturing the same
#1013Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode
#1014B-TRAN Geometry and Structure That Provides Both High Gain and High Current Density
#1015Semiconductor device with field threshold MOSFET for high voltage termination
#1016Power semiconductor device having a field electrode
#1017Semiconductor device and monolithic semiconductor device including a power semiconductor device and a control circuit
#1018SCHOTTKY BARRIER DIODE AND A METHOD OF MANUFACTURING THE SAME
#1019High voltage laterally diffused MOSFET with buried field shield and method to fabricate same
#1020Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1021Power semiconductor device having fully depleted channel region
#1022Trench MOSFET device and the preparation method thereof
#1023Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures
#1024MOSFET device and fabrication
#1025Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#1026Trench gate trench field plate vertical mosfet
#1027Power MOSFET semiconductor
#1028Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#1029Semiconductor device and method of manufacturing semiconductor device
#1030Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
#1031SEMICONDUCTOR DEVICE
#1032Trench power semiconductor device
#1033Vertical DMOS transistor
#1034High-electron-mobility transistor having a buried field plate
#1035Semiconductor device
#1036Power device having a polysilicon-filled trench with a tapered oxide thickness
#1037Power semiconductor device
#1038Capacitively-coupled field-plate structures for semiconductor devices
#1039Semiconductor device comprising a transistor including a first field plate and a second field plate
#1040Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#1041Self-aligned dual trench device
#1042Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice
#1043Electric assembly including a reverse conducting switching device and a rectifying device
#1044Circuit arrangement for fast turn-off of bi-directional switching device
#1045Semiconductor devices and method for manufacturing semiconductor devices
#1046Device structure having inter-digitated back to back MOSFETs
#1047Semiconductor device having air gap and method for manufacturing the same, memory cell having the same and electronic device having the same
#1048Power MOSFET
#1049Semiconductor devices and methods for forming semiconductor devices
#1050Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage
#1051Semiconductor device having a trench gate electrode
#1052Semiconductor device having a cavity
#1053Method of fabricating a power semiconductor device
#1054Methods for forming semiconductor devices, semiconductor devices and power semiconductor devices
#1055Semiconductor device
#1056Vertical sense devices in vertical trench MOSFET
#1057TRENCH MOSFET STRUCTURE AND LAYOUT WITH SEPARATED SHIELDED GATE
#1058Semiconductor device having a channel region patterned into a ridge by adjacent gate trenches
#1059Semiconductor device and semiconductor device manufacturing method
#1060Semiconductor Device Having First and Second Circuits Integrated in a Semiconductor Body
#1061Semiconductor Device Having Stripe-Shaped Gate Structures and Spicular or Needle-Shaped Field Electrode Structures
#1062Method for manufacturing an integrated circuit including a lateral trench transistor and a logic circuit element
#1063Semiconductor device having a gate trench and an outside trench
#1064Semiconductor device having field-effect structures with different gate materials
#1065Semiconductor apparatus
#1066Power semiconductor device trench having field plate and gate electrode
#1067FinFET with trench field plate
#1068Vertical sense devices in vertical trench MOSFET
#1069Semiconductor device and method for manufacturing the same
#1070Trenched MOS gate controlled rectifier
#1071Semiconductor device
#1072Multiple shielding trench gate FET
#1073Self-aligned contact for trench power MOSFET
#1074Variable snubber for MOSFET application
#1075Semiconductor power device having shielded gate structure and ESD clamp diode manufactured with less mask process
#1076Semiconductor device with non-uniform trench oxide layer
#1077Semiconductor transistor and method for forming the semiconductor transistor
#1078Bipolar semiconductor device with sub-cathode enhancement regions
#1079SEMICONDUCTOR DEVICE
#1080Method of manufacturing semiconductor devices with transistor cells and semiconductor device
#1081Dual-gate trench IGBT with buried floating P-type shield
#1082Double-base-connected bipolar transistors with passive components preventing accidental turn-on
#1083Compliant bipolar micro device transfer head with silicon electrodes
#1084Semiconductor device
#1085Semiconductor device
#1086Drift-region field control of an LDMOS transistor using biased shallow-trench field plates
#1087Semiconductor devices and a method for forming a semiconductor device
#1088Semiconductor device with insulating section of varying thickness
#1089Semiconductor device
#1090Method of forming a semiconductor device
#1091METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
#1092Termination trench structures for high-voltage split-gate MOS devices
#1093Vertical power MOSFET device
#1094Switched-mode power converter with an inductive storage element and a cascode circuit
#1095Semiconductor device comprising a first gate electrode and a second gate electrode
#1096Semiconductor device having field plate structures, source regions and gate electrode structures between the field plate structures
#1097Power semiconductor device
#1098Double gate transistor device and method of operating
#1099Semiconductor device having an active trench and a body trench
#1100Vertical power transistor with deep trenches and deep regions surrounding cell array
#1101Semiconductor device and manufacturing method of the same
#1102Semiconductor device and method of manufacturing semiconductor device
#1103Semiconductor device and method of manufacturing semiconductor device
#1104Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions
#1105Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region
#1106Edge termination for super-junction MOSFETs
#1107Vertical power transistor with termination area having doped trenches with variable pitches
#1108Semiconductor device
#1109Vertical power transistor die with etched beveled edges for increasing breakdown voltage
#1110RB-IGBT
#1111Vertical power transistor with dual buffer regions
#1112Vertical power transistor with deep floating termination regions
#1113Floating-shield triple-gate MOSFET
#1114Method of Processing a Semiconductor Device
#1115Methods of manufacturing a power MOSFET
#1116Process method and structure for high voltage MOSFETs
#1117Semiconductor device with threshold MOSFET for high voltage termination
#1118Semiconductor device
#1119Semiconductor device and method of manufacturing same
#1120Semiconductor structure having field plate and associated fabricating method
#1121Bipolar transistor device and method of fabrication
#1122TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION
#1123Trench gate trench field plate vertical MOSFET
#1124Semiconductor device having an electrode that is in a peripheral trench region and at a same potential as a source electrode
#1125Apparatus and method for power MOS transistor
#1126SELF-ALIGNED SHIELDED-GATE TRENCH MOS-CONTROLLED SILICON CARBIDE SWITCH WITH REDUCED MILLER CAPACITANCE AND METHOD OF MANUFACTURING THE SAME
#1127Trench power transistor
#1128Method and apparatus for MOS device with doped region
#1129Dual channel trench LDMOS transistors with drain superjunction structure integrated therewith
#1130Power MOSFET with metal filled deep source contact
#1131Method for manufacturing a high-voltage FinFET device having LDMOS structure
#1132Processing a semiconductor device
#1133Double gate trench power transistor and manufacturing method thereof
#1134Lateral power integrated devices having low on-resistance
#1135Semiconductor component that includes a clamping structure and method of manufacturing the semiconductor component
#1136SPLIT-GATE SUPERJUNCTION POWER TRANSISTOR
#1137Transistor with field electrode
#1138Semiconductor device
#1139Method of producing an integrated power transistor circuit having a current-measuring cell
#1140Method of forming a semiconductor structure having integrated snubber resistance
#1141Semiconductor device including a heat sink structure
#1142Trench MOSFET with depleted gate shield and method of manufacture
#1143Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers
#1144Semiconductor device having trenches with enlarged width regions
#1145Semiconductor device comprising a first gate trench and a second gate trench
#1146Semiconductor device
#1147Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device
#1148Semiconductor device
#1149LDMOS with adaptively biased gate-shield
#1150Method for manufacturing semiconductor device
#1151IE type trench gate IGBT
#1152Radio frequency isolation for SOI transistors
#1153Zener diode having an adjustable breakdown voltage
#1154Termination design for high voltage device
#1155Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
#1156Semiconductor device with surface insulating film
#1157MOSFET having dual-gate cells with an integrated channel diode
#1158Semiconductor device
#1159Semiconductor device and manufacturing method thereof
#1160Semiconductor device having a trench with different electrode materials
#1161Semiconductor device with voltage resistant structure
#1162Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
#1163Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures
#1164Super junction MOSFET device and semiconductor chip
#1165Trench gate trench field plate vertical MOSFET
#1166Method for producing a dielectric field plate in a substrate trench, a corresponding substrate, and a power transistor
#1167MOSFET active area and edge termination area charge balance
#1168Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer
#1169Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region
#1170Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings
#1171Trench MOSFET with self-aligned body contact with spacer
#1172Lateral high voltage integrated devices having trench insulation field plates and metal field plates
#1173Structures and methods of fabricating dual gate devices
#1174VDMOS having shielding gate electrodes in trenches and method of making the same
#1175Semiconductor device comprising a field electrode
#1176Schottky diode and method of manufacturing the same
#1177Diode, semiconductor device, and MOSFET
#1178Fabrication of shielded gate trench MOSFET with increased source-metal contact
#1179Semiconductor device and method of manufacturing the same
#1180Semiconductor device and semiconductor device manufacturing method
#1181Electronic device including a conductive structure surrounded by an insulating structure
#1182Electronic device including an insulating structure
#1183Semiconductor device having a gate and method of forming the same
#1184Semiconductor device and a method of making a semiconductor device
#1185Semiconductor device and method of manufacturing the same
#1186Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts
#1187Semiconductor device
#1188Semiconductor device
#1189Power semiconductor device comprising trench structures
#1190Power device having a polysilicon-filled trench with a tapered oxide thickness
#1191Semiconductor device
#1192Semiconductor device with electric field relaxation portion in insulating layer between lower and upper trench electrodes
#1193Vertical high-voltage MOS transistor
#1194Semiconductor device and method of manufacturing the same
#1195Semiconductor device including a vertical PN junction between a body region and a drift region
#1196Semiconductor device and manufacturing method thereof
#1197Semiconductor device and method of manufacturing same
#1198TERMINATION STRUCTURE WITH MULTIPLE EMBEDDED POTENTIAL SPREADING CAPACITIVE STRUCTURES FOR TRENCH MOSFET
#1199Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit
#1200Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs