208315 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Recessed field plates, e.g. trench field plates, buried field plates
Semiconductor device and method for manufacturing the same
#1202Insulated gate semiconductor device having a shield electrode structure and method
#1203Semiconductor device and manufacturing method of the same
#1204Substrate contact having substantially straight sidewalls to a top surface of the substrate
#1205Wide bandgap semiconductor device
#1206Semiconductor device and method of manufacturing semiconductor device
#1207SEMICONDUCTOR DEVICE
#1208Trench power transistor structure and manufacturing method thereof
#1209Semiconductor device with contact groove arrangements providing improved performance
#1210Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device
#1211Method of manufacturing a semiconductor structure and semiconductor device
#1212Integrated channel diode
#1213IGBT semiconductor device
#1214Semiconductor device
#1215Self-aligned dual trench device
#1216Semiconductor device including at least one lateral IGFET and at least one vertical IGFET and corresponding manufacturing method
#1217SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1218Semiconductor device with non-uniform trench oxide layer
#1219Trench MOSFET with depleted gate shield and method of manufacture
#1220METHODS AND APPARATUS RELATED TO TERMINATION REGIONS OF A SEMICONDUCTOR DEVICE
#1221Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode
#1222Method of forming a semiconductor device including forming a shield conductor overlying a gate conductor
#1223Method for Producing a Semiconductor Component with Insulated Semiconductor Mesas in a Semiconductor Body
#1224Semiconductor device having source field plate and method of manufacturing the same
#1225Method for manufacturing termination structure of semiconductor device
#1226Semiconductor device having air gap and method for manufacturing the same, memory cell having the same and electronic device having the same
#1227Method for manufacturing insulated gate bipolar transistor
#1228Semiconductor device with metal structure electrically connected to a conductive structure
#1229Method of fabricating a semiconductor device and semiconductor product
#1230Power semiconductor device
#1231Semiconductor device
#1232Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench
#1233Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
#1234Transistor with improved avalanche breakdown behavior
#1235Transistor with field electrodes and improved avalanche breakdown behavior
#1236Semiconductor device and method for manufacturing the same
#1237Integrated termination for multiple trench field plate
#1238Semiconductor structure and method of forming the same
#1239Power MOSFET having planar channel, vertical current path, and top drain electrode
#1240Split gate semiconductor device with curved gate oxide profile
#1241Semiconductor module
#1242Method of manufacturing a P-channel power MOSFET
#1243Semiconductor device
#1244Trench power MOSFET
#1245Stripe-shaped electrode structure including a main portion with a field electrode and an end portion terminating the electrode structure
#1246High voltage field balance metal oxide field effect transistor (FBM)
#1247Semiconductor device
#1248Schottky barrier diode
#1249Vertical transistor with improved robustness
#1250Devices, components and methods combining trench field plates with immobile electrostatic charge
#1251Transistor Arrangement Including Power Transistors and Voltage Limiting Means
#1252Vertical gallium nitride power field-effect transistor with a field plate structure
#1253IGBT semiconductor device
#1254Power semiconductor device
#1255Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs
#1256Multiple shielding trench gate FET
#1257Bidirectional bipolar transistors with two-surface cellular geometries
#1258Structure of trench-vertical double diffused MOS transistor and method of forming the same
#1259Bidirectional Bipolar Power Devices with Two-Surface Optimization of Striped Emitter/Collector Orientation
#1260Reverse-conducting IGBT with buffer layer and separation layer for reducing snapback
#1261Compliant bipolar micro device transfer head with silicon electrodes
#1262Trench MOSFET having an independent coupled element in a trench
#1263Semiconductor Devices and Methods for Forming a Semiconductor Device
#1264Semiconductor device and trench field plate field effect transistor with a field dielectric including thermally grown and deposited portions
#1265Bidirectional Bipolar Transistor Structure with Field-Limiting Rings Formed by the Emitter Diffusion
#1266Semiconductor device having air gap, a method for manufacturing the same, a memory cell having the same and an electronic device having the same
#1267Geometry for a Bidirectional Bipolar Transistor with Trenches that Surround the Emitter/Collector Regions
#1268INTEGRATION OF DEVICES
#1269Field effect transistor and method of making
#1270Method and power semiconductor device having an insulating region arranged in an edge termination region
#1271Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
#1272Semiconductor device comprising a transistor
#1273Poly sandwich for deep trench fill
#1274Semiconductor device having air gap and method for manufacturing the same, memory cell having the same and electronic device having the same
#1275Method of producing a semiconductor component arrangement comprising a trench transistor
#1276Semiconductor device including a diode at least partly arranged in a trench
#1277Semiconductor Device and Manufacturing Method
#1278Semiconductor device with cell trench structures and a contact structure
#1279Semiconductor device having a channel separation trench
#1280Self-aligned contact for trench power MOSFET
#1281Method for forming a stress-reduced field-effect semiconductor device
#1282Field plate trench semiconductor device with planar gate
#1283Semiconductor Device Including a Superjunction Structure with Drift Regions and Compensation Structures
#1284Method of manufacturing a trench FET having a merged gate dielectric
#1285Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device
#1286Semiconductor device comprising auxiliary trench structures and integrated circuit
#1287Semiconductor devices with field plates
#1288Power semiconductor device and fabrication method thereof
#1289Methods of operating power semiconductor devices and structures
#1290Semiconductor device comprising planar gate and trench field electrode structure
#1291Powers semiconductor device
#1292Method for producing a controllable semiconductor component having trenches with different widths and depths
#1293Semiconductor device and manufacturing method thereof
#1294Field effect semiconductor component and method for producing it
#1295Semiconductor device and manufacturing method
#1296Zener diode having an adjustable low breakdown voltage
#1297Methods of manufacturing trench semiconductor devices with edge termination structures
#1298Zener diode having an adjustable breakdown voltage
#1299OUTPUT CAPACITANCE REDUCTION IN POWER TRANSISTORS
#1300Semiconductor device, integrated circuit and method of manufacturing a semiconductor device
#1301Method of manufacturing a semiconductor device
#1302Semiconductor device
#1303Semiconductor device
#1304Semiconductor device comprising an isolation trench
#1305Semiconductor device
#1306Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#1307Semiconductor device with first and second field electrode structures
#1308Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice
#1309Power semiconductor device including well extension region and field-limiting rings
#1310Semiconductor device
#1311Power semiconductor device
#1312Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region
#1313Medium voltage MOSFET device
#1314Semiconductor device
#1315Semiconductor device comprising a transistor array and a termination region and method of manufacturing such a semiconductor device
#1316Medium high voltage MOSFET device
#1317Semiconductor device provided with an IE type trench IGBT
#1318POWER SEMICONDUCTOR DEVICE
#1319Power MOSFET semiconductor
#1320Method of manufacturing a spacer supported lateral channel FET
#1321Semiconductor device having a polycrystalline silicon IGFET
#1322Semiconductor device and the method of manufacturing the same
#1323Method of operating a reverse conducting IGBT
#1324Semiconductor device
#1325Superjunction device and semiconductor structure comprising the same
#1326MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array
#1327Semiconductor device with varied electrodes
#1328Transistor structure with improved unclamped inductive switching immunity
#1329Semiconductor device
#1330Reducing switching losses associated with a synchronous rectification MOSFET
#1331Trench Gated Power Device With Multiple Trench Width and its Fabrication Process
#1332Semiconductor device
#1333Method of forming an isolation structure in a well of a substrate
#1334MOSFET having dual-gate cells with an integrated channel diode
#1335Apparatus and method for power MOS transistor
#1336Semiconductor device having field plate structures and gate electrode structures between the field plate structures
#1337Semiconductor device having overload current carrying capability
#1338Trench MOSFET having reduced gate charge
#1339Trench MOSFET having reduced gate charge
#1340Semiconductor device and method of manufacture therefor
#1341Semiconductor device
#1342SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
#1343Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#1344Split-gate trench power MOSFET with protected shield oxide
#1345Semiconductor device including a transistor with a gate dielectric having a variable thickness
#1346Semiconductor device with transistor cells and enhancement cells with delayed control signals
#1347LDMOS with adaptively biased gate-shield
#1348Transistor device with field-electrode
#1349Semiconductor device
#1350Bidirectional Power Switching with Bipolar Conduction and with Two Control Terminals Gated by Two Merged Transistors
#1351Method of manufacturing a semiconductor device with lateral FET cells and field plates
#1352Diode structures with controlled injection efficiency for fast switching
#1353Scalable current sense transistor
#1354Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs
#1355Semiconductor arrangement
#1356Method of forming a semiconductor device including trench termination
#1357Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
#1358Semiconductor device and method for manufacturing the same
#1359Vertical high-voltage MOS transistor and method of forming the same
#1360Semiconductor device with buried doped region and contact structure
#1361MOS-bipolar device
#1362Semiconductor component with field electrode between adjacent semiconductor fins and method for producing such a semiconductor component
#1363Power semiconductor device having low on-state resistance
#1364Semiconductor device with charge compensation region underneath gate trench
#1365Vertical DMOS transistor
#1366Methodology and structure for field plate design
#1367Semiconductor device
#1368Semiconductor device and manufacturing method of the same
#1369Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#1370High-voltage FinFET device having LDMOS structure and method for manufacturing the same
#1371High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#1372Semiconductor component with dynamic behavior
#1373Compound gated semiconductor device having semiconductor field plate
#1374Method for manufacturing a semiconductor device
#1375Vertical semiconductor device
#1376Field Plates on Two Opposed Surfaces of Double-Base Bidirectional Bipolar Transistor: Devices, Methods, and Systems
#1377Output capacitance reduction in power transistors
#1378Trench having thick dielectric selectively on bottom portion
#1379Semiconductor device having trench gate structure and method for manufacturing the semiconductor device
#1380Insulated gate semiconductor device having a shield electrode structure and method
#1381Semiconductor device structure and method for manufacturing the same
#1382Corner layout for high voltage semiconductor devices
#1383Integrated snubber in a single poly MOSFET
#1384Method of forming a high electron mobility semiconductor device and structure therefor
#1385Structure of a trench MOS rectifier and method of forming the same
#1386SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING
#1387Semiconductor device and method of manufacturing a semiconductor device using an alignment layer
#1388Semiconductor device and method of manufacturing a semiconductor device
#1389Semiconductor structure having integrated snubber resistance
#1390Semiconductor device
#1391Power semiconductor device with source trench and termination trench implants
#1392Oxide terminated trench MOSFET with three or four masks
#1393Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area
#1394Semiconductor device employing trenches for active gate and isolation
#1395Semiconductor device with sensor potential in the active region
#1396Method of controlling breakdown voltage of a diode having a semiconductor body
#1397Method of manufacturing a semiconductor device and semiconductor device
#1398Semiconductor device and method of manufacturing the same
#1399Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
#1400Power semiconductor device with electrode having trench structure
#1401Method of manufacturing a semiconductor device having a cell field portion and a contact area
#1402LDMOS power semiconductor device and manufacturing method of the same
#1403Semiconductor device with variable resistive element
#1404Semiconductor device
#1405Semiconductor device with current sensor
#1406Semiconductor device with field electrode structure
#1407SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1408SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1409Semiconductor device with field electrode structures, gate structures and auxiliary diode structures
#1410Fast and stable ultra low drop-out (LDO) voltage clamp device
#1411Semiconductor switch with integrated temperature sensor
#1412High-electron-mobility transistor having a buried field plate
#1413Trench gate trench field plate vertical MOSFET
#1414Semiconductor device and method for manufacturing the same
#1415Trench gate FET with self-aligned source contact
#1416Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures
#1417Semiconductor device with field electrode structures in a cell area and termination structures in an edge area
#1418Devices, components and methods combining trench field plates with immobile electrostatic charge
#1419Semiconductor device with field electrode and contact structure
#1420Semiconductor Device and a Method for Manufacturing a Semiconductor Device
#1421Semiconductor device
#1422Edge termination for super-junction MOSFETs
#1423Transistor structure with improved unclamped inductive switching immunity
#1424Vertical sense devices in vertical trench MOSFET
#1425Trenched Faraday shielding
#1426Bidirectional trench FET with gate-based resurf
#1427Semiconductor device having a tapered gate structure and method
#1428Compound semiconductor device
#1429Nitride semiconductor device
#1430Diodes and methods of manufacturing diodes
#1431Semiconductor component and method
#1432Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
#1433Multiple semiconductor device trenches per cell pitch
#1434Field plate trench transistor and method for producing it
#1435Vertical semiconductor device having semiconductor mesas with side walls and a PN-junction extending between the side walls
#1436Power semiconductor device
#1437Semiconductor device and method for fabricating semiconductor device
#1438Trench power MOSFET
#1439Vertical power MOSFET having planar channel and its method of fabrication
#1440Transistor and method of manufacturing the same
#1441Power MOSFET with seperate gate and field plate trenches
#1442Semiconductor Device Comprising a Plurality of Transistor Cells and Manufacturing Method
#1443Semiconductor device and manufacturing method for the same
#1444Fabrication of shielded gate trench MOSFET with increased source-metal contact
#1445Semiconductor device
#1446Semiconductor device with surface insulating film
#1447Insulated gate semiconductor device having a shield electrode structure
#1448Semiconductor device with field electrode and field dielectric
#1449Semiconductor device comprising a field electrode
#1450Semiconductor device and method for manufacturing a semiconductor device
#1451Switching converter with an adjustable transistor component
#1452Integrating Schottky diode into power MOSFET
#1453Semiconductor device with voltage resistant structure
#1454IGBT having at least one first type transistor cell and reduced feedback capacitance
#1455Semiconductor device with power transistor cells and lateral transistors and method of manufacturing
#1456Charge compensation structure and manufacturing therefor
#1457Semiconductor device and method for manufacturing the same
#1458Semiconductor device and manufacturing method
#1459Semiconductor device and fabrication method thereof
#1460Semiconductor device with thermally grown oxide layer between field and gate electrode and method of manufacturing
#1461Cascode circuit
#1462Power device termination structures and methods
#1463High voltage field balance metal oxide field effect transistor (FBM)
#1464Semiconductor device having an insulated gate bipolar transistor arrangement
#1465Integrated termination for multiple trench field plate
#1466Integrated channel diode
#1467Power semiconductor device
#1468Semiconductor device having an active trench and a body trench
#1469Trench MOSFET having reduced gate charge
#1470MOSFET having dual-gate cells with an integrated channel diode
#1471Semiconductor device
#1472Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#1473Semiconductor device comprising trench structures
#1474Semiconductor device and method of manufacturing the same
#1475Method of manufacturing a semiconductor device with a continuous silicate glass structure
#1476Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
#1477Semiconductor device provided with an IE type trench IGBT
#1478Trench insulated gate bipolar transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
#1479GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNEL
#1480Lateral transistors and methods with low-voltage-drop shunt to body diode
#1481Semiconductor device with termination structure for power MOSFET applications
#1482Lateral power device having low specific on-resistance and using high-dielectric constant socket structure and manufacturing method therefor
#1483Transistors with isolation regions
#1484Semiconductive device and associated method of manufacture
#1485Termination structure of semiconductor device and method for manufacturing the same
#1486Semiconductor device in a semiconductor substrate and method of manufacturing a semiconductor device in a semiconductor substrate
#1487Semiconductor device
#1488Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
#1489Semiconductor device including transistor
#1490Semiconductor device
#1491Method for forming a transistor device having a field electrode
#1492Semiconductor device
#1493Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs
#1494Method for producing a controllable semiconductor component having a plurality of trenches
#1495Super junction semiconductor device including edge termination
#1496Integrated transistor structure having a power transistor and a bipolar transistor
#1497Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor device
#1498Semiconductor device and method of forming the same
#1499Semiconductor device with metal-filled groove in polysilicon gate electrode
#1500Semiconductor device with semiconductor mesa including a constriction