208315 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Recessed field plates, e.g. trench field plates, buried field plates
Semiconductor device
#2402Semiconductor device
#2403Semiconductor device and manufacturing method thereof
#2404Semiconductor device with field plate and method
#2405Lateral high-voltage transistor with vertically-extended voltage-equalized drift region
#2406Double gate manufactured with locos techniques
#2407Semiconductor device and method of manufacturing a semiconductor device
#2408Devices and integrated circuits including lateral floating capacitively coupled structures
#2409Semiconductor device structure with a tapered field plate and cylindrical drift region geometry
#2410Anchoring structure and intermeshing structure
#2411Semiconductor device and method for producing it
#2412Component arrangement including a power semiconductor component having a drift control zone
#2413Semiconductor device with a semiconductor body and method for producing it
#2414Device structure and manufacturing method using HDP deposited source-body implant block
#2415Manufacture of Lateral Semiconductor Devices
#2416Shielded gate field effect transistor
#2417Semiconductor component including compensation zones and discharge structures for the compensation zones
#2418Power-MOSFETs with improved efficiency for multi-channel class-D audio amplifiers and packaging thereof
#2419Semiconductor device
#2420Etch depth determination for SGT technology
#2421Method for producing a semiconductor component
#2422Termination trench structure for mosgated device and process for its manufacture
#2423Monolithic MOSFET and Schottky diode device
#2424Radio frequency isolation for SOI transistors
#2425Method for manufacturing a semiconductor device and semiconductor device
#2426Field-effect transistor and method for manufacturing a field-effect transistor
#2427ULTRA DENSE TRENCH-GATED POWER DEVICE WITH THE REDUCED DRAIN-SOURCE FEEDBACK CAPACITANCE AND MILLER CHARGE
#2428Structure and method for forming accumulation-mode field effect transistor with improved current capability
#2429Semiconductor chip and shielding structure thereof
#2430High Frequency Switch With Low Loss, Low Harmonics, And Improved Linearity Performance
#2431Lateral field-effect transistor having an insulated trench gate electrode
#2432Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices
#2433Integrated Hydrogen Anneal and Gate Oxidation for Improved Gate Oxide Integrity
#2434Semiconductor component with vertical structures having a high aspect ratio and method
#2435Gate pullback at ends of high-voltage vertical transistor structure
#2436Segmented pillar layout for a high-voltage vertical transistor
#2437Power Semiconductor Devices with Barrier Layer to Reduce Substrate Up-Diffusion and Methods of Manufacture
#2438Sensing FET integrated with a high-voltage transistor
#2439Checkerboarded high-voltage vertical transistor layout
#2440Gate metal routing for transistor with checkerboarded layout
#2441Semiconductor component comprising a drift zone and a drift control zone
#2442Integrated MOSFET and Schottky device
#2443MOSFET DEVICE HAVING IMPROVED AVALANCHE CAPABILITY
#2444Trench MOSFET with deposited oxide
#2445Method of fabricating super trench MOSFET including buried source electrode
#2446Lateral semiconductor component with a drift zone having at least one field electrode
#2447COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE
#2448Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
#2449SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING
#2450Closed trench MOSFET with floating trench rings as termination
#2451Manufacturing method of semiconductor device
#2452PN junction and MOS capacitor hybrid RESURF transistor
#2453Gate etch process for a high-voltage FET
#2454Trench-gate transistors and their manufacture
#2455Trenched shield gate power semiconductor devices and methods of manufacture
#2456Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer
#2457ULTRA DENSE TRENCH-GATED POWER DEVICE WITH REDUCED DRAIN SOURCE FEEDBACK CAPACITANCE AND MILLER CHARGE
#2458Methods of making power semiconductor devices with thick bottom oxide layer
#2459Semiconductor device
#2460Power semiconductor devices having termination structures and methods of manufacture
#2461Power semiconductor device
#2462SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2463Structure and method for forming a planar schottky contact
#2464Electronic device with connecting structure
#2465High-voltage device structure
#2466Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#2467Trenched MOSFET device configuration with reduced mask processes
#2468Termination Structures For Semiconductor Devices and the Manufacture Thereof
#2469High-voltage vertical transistor with a multi-gradient drain doping profile
#2470Electronic circuit control element with tap element
#2471Method for forming inter-poly dielectric in shielded gate field effect transistor
#2472Integrated circuit including a semiconductor device
#2473Semiconductor component having a transition region
#2474Insulated gate semiconductor device and method for producing the same
#2475Trench schottky barrier diode with differential oxide thickness
#2476Gate etch process for a high-voltage FET
#2477Schottky barrier semiconductor device
#2478Power semiconductor device
#2479Method for producing an integrated circuit with a trench transistor structure
#2480Power MOSFET with recessed field plate
#2481MOS transistor device structure combining Si-trench and field plate structures for high voltage device
#2482Trench gate FET with self-aligned features
#2483METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE
#2484Semiconductor device
#2485Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together
#2486Semiconductor devices including voltage-sustaining space-charge zone and methods of manufacture thereof
#2487Trench fet with self aligned source and contact
#2488Semiconductor component having a space saving edge structure
#2489Termination design for deep source electrode MOSFET
#2490Inverted-trench grounded-source field effect transistor (FET) structure using highly conductive substrates
#2491Low voltage high density trench-gated power device with uniformly doped channel and its edge termination
#2492Structure and method for improving shielded gate field effect transistors
#2493Field effect transistor with trench filled with insulating material and strips of semi-insulating material along trench sidewalls
#2494Semiconductor devices
#2495Semiconductor device having superjunction structure and method for manufacturing the same
#2496Integrated circuit including a trench transistor having two control electrodes
#2497Method of fabricating a high-voltage transistor with an extended drain structure
#2498Shielded gate trench FET with the shield and gate electrodes being connected together
#2499High voltage semiconductor device with lateral series capacitive structure
#2500Memory cell access devices and methods of making the same
#2501Polysilicon control etch-back indicator
#2502Semiconductor device and method for manufacture
#2503Substrate-biased Silicon Diode for Electrostatic Discharge Protection
#2504Power device with improved edge termination
#2505Trench semiconductor device and method of manufacturing it
#2506Forming of the periphery of a schottky diode with MOS trenches
#2507High density trench FET with integrated Schottky diode and method of manufacture
#2508Semiconductor component arrangement comprising a trench transistor
#2509Substrate-based silicon diode for electrostatic discharge protection
#2510Power semiconductor device
#2511Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone
#2512Shielded gate trench (SGT) MOSFET devices and manufacturing processes
#2513Lateral power transistor with self-biasing electrodes
#2514Super trench MOSFET including buried source electrode
#2515Trench-gate transistors and their manufacture
#2516Lateral power transistor and method for producing same
#2517Semiconductor device
#2518Self-aligned trench MOSFET structure and method of manufacture
#2519High-withstand voltage wide-gap semiconductor device and power device
#2520Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch
#2521METHOD OF DRIVING A DUAL GATED MOSFET
#2522Semiconductor device
#2523Semiconductor component and method
#2524Trench field plate termination for power devices
#2525Semiconductor device having increased gate-source capacity provided by protruding electrode disposed between gate electrodes formed in a trench
#2526SEMICONDUCTOR DEVICE
#2527FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT
#2528Vertical semiconductor device
#2529Semiconductor chip and shielding structure thereof
#2530Trench insulated gate field effect transistor
#2531High-voltage vertical transistor with a multi-gradient drain doping profile
#2532Trench structure semiconductor device and method for producing it
#2533Trench insulated gate field effect transistor
#2534Trench transistor and method for fabricating a trench transistor
#2535Power semiconductor device
#2536Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structure
#2537Field electrode trench transistor structure with voltage divider
#2538Trench FET with improved body to gate alignment
#2539Semiconductor device and production method therefor
#2540Lateral SOI component having a reduced on resistance
#2541Insulated gate field effect transistor
#2542Junction barrier Schottky (JBS) with floating islands
#2543SOI semiconductor component with increased dielectric strength
#2544Latch-up free vertical TVS diode array structure using trench isolation
#2545Semiconductor device production method and semiconductor device
#2546Insulated gate transistor incorporating diode
#2547Power semiconductor component having a field electrode and method for producing this component
#2548SEMICONDUCTOR POWER DEVICE WITH INSULATED GATE FORMED IN A TRENCH, AND MANUFACTURING PROCESS THEREOF
#2549Method for producing a trench transistor and trench transistor
#2550DMOS transistor with floating poly-filled trench for improved performance through 3-D field shaping
#2551High blocking semiconductor component comprising a drift section
#2552Trench semiconductor device of improved voltage strength, and method of fabrication
#2553Nitride-based semiconductor device and method of manufacturing the same
#2554Method for fabricating a semiconductor device
#2555Method of manufacturing a trench transistor having a heavy body region
#2556Power semiconductor device with interconnected gate trenches
#2557Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and Miller charge
#2558Semiconductor device and capacitance regulation circuit
#2559Semiconductor device and capacitance regulation circuit
#2560Shielded gate field effect transistor with improved inter-poly dielectric
#2561Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction
#2562Methods for forming shielded gate field effect transistors
#2563Power semiconductor component with a low on-state resistance
#2564Terminations for semiconductor devices with floating vertical series capacitive structures
#2565Semiconductor memory device and driving method of the same
#2566Semiconductor device
#2567Structure and method for forming laterally extending dielectric layer in a trench-gate FET
#2568Charge balance field effect transistor
#2569Trench-gate field effect transistors and methods of forming the same
#2570MOS transistor device structure combining Si-trench and field plate structures for high voltage device
#2571Electronic circuit control element with tap element
#2572Semiconductor device having rectifying action
#2573IGBT or like semiconductor device of high voltage-withstanding capability
#2574Method of forming trench gate field effect transistor with recessed mesas
#2575DMOS transistor with a poly-filled deep trench for improved performance
#2576Semiconductor device and manufacturing method of the same
#2577Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction
#2578Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures
#2579Dielectric isolation type semiconductor device and manufacturing method therefor
#2580Semiconductor device having power transistors and Schottky barrier diode
#2581Alignment of trench for MOS
#2582Power semiconductor device
#2583Semiconductor device having screening electrode and method
#2584Power semiconductor devices and methods of manufacture
#2585Power semiconductor devices and methods of manufacture
#2586Semiconductor device
#2587Method for producing a buried semiconductor layer
#2588Field effect controllable semiconductor component with improved inverse diode and production methods therefor
#2589Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
#2590Semiconductor component and method for fabricating it
#2591Vertical unipolar component
#2592Trench MOS structure
#2593Semiconductor device and manufacturing method thereof
#2594MIS-type semiconductor device
#2595Semiconductor device
#2596Method of fabricating semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
#2597Method of forming schottky diode with charge balance structure
#2598Power semiconductor device and method of manufacturing the same
#2599Trench FET with self aligned source and contact
#2600Semiconductor device and manufacturing method of the same
#2601Vertical unipolar component with a low leakage current
#2602Trench transistor and method for producing it
#2603Power semiconductor switching element
#2604Method for fabricating contact holes in a semiconductor body and a semiconductor structure
#2605Connection, configuration, and production of a buried semiconductor layer
#2606Metal-oxide-semiconductor device having improved performance and reliability
#2607Power trench transistor
#2608Vertical unipolar component periphery
#2609Method for producing a vertical transistor component
#2610Semiconductor device with vertical MOSFET and method of manufacturing the same
#2611Method of making a trench MOSFET with deposited oxide
#2612Trench MOSFET and method of manufacturing same
#2613Lateral semiconductor transistor
#2614Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
#2615Power semiconductor device including insulated source electrodes inside trenches
#2616Semiconductor device
#2617Insulated gate semiconductor device with small feedback capacitance and manufacturing method thereof
#2618ACCUFET with schottky source contact
#2619Metal oxide semiconductor device including a shielding structure for low gate-drain capacitance
#2620Metal-oxide-semiconductor device having an enhanced shielding structure
#2621Integrated fet and schottky device
#2622MOSgated power semiconductor device with source field electrode
#2623ACCUFET with Schottky source contact
#2624Field plate trench transistor
#2625Accumulation device with charge balance structure and method of forming the same
#2626Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge
#2627Power semiconductor device
#2628Lateral semiconductor component with a drift zone having at least one field electrode
#2629Power semiconductor devices
#2630Method of manufacture of semiconductor device
#2631Semiconductor device
#2632Semiconductor component and method for its production
#2633Deep trench super switch device
#2634Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
#2635Transistor
#2636Trench type semiconductor device with reduced Qgd
#2637Semiconductor device with buried-oxide film
#2638Dielectric isolation type semiconductor device
#2639Super trench MOSFET including buried source electrode and method of fabricating the same
#2640Method for producing a junction region between a trench and a semiconductor zone surrounding the trench
#2641Semiconductor device including a channel stop structure and method of manufacturing the same
#2642Termination design with multiple spiral trench rings
#2643Self aligned contact in a semiconductor device and method of fabricating the same
#2644Power semiconductor device with buried source electrode
#2645Process of fabricating termination region for trench MIS device
#2646Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor
#2647Semiconductor device including a channel stop structure and method of manufacturing the same
#2648Trench-gate semiconductor device and method of manufacturing
#2649Optimized trench power MOSFET with integrated schottky diode
#2650Trench transistor
#2651Current sense trench type MOSFET with improved accuracy and ESD withstand capability
#2652Semiconductor device with edge structure
#2653Trench-gate semiconductor devices
#2654High-voltage vertical transistor with edge termination structure
#2655Semiconductor device and a method of manufacturing the same
#2656Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
#2657Power semiconductor devices and methods of manufacture
#2658Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
#2659Edge termination in MOS transistors
#2660Electronic circuit control element with tap element
#2661Power transistor arrangement and method for fabricating it
#2662Method of driving a dual gated MOSFET
#2663Power transistor arrangement and method for fabricating it
#2664Method for improved MOS gating to reduce miller capacitance and switching losses
#2665Forming of the periphery of a schottky diode with MOS trenches
#2666High-voltage vertical transistor with a multi-gradient drain doping profile
#2667Semiconductor device
#2668Trench Schottky barrier diode with differential oxide thickness
#2669MOS transistor device
#2670Trench power MOSFET with reduced gate resistance
#2671Method of fabricating a high-voltage transistor with an extended drain structure
#2672MIS-type semiconductor device
#2673Metal-oxide-semiconductor device having improved performance and reliability
#2674Insulated gate transistor
#2675Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
#2676Method of manufacturing a trench transistor having a heavy body region
#2677Semiconductor device having rectifying action
#2678Semiconductor device with peripheral trench
#2679Thick field oxide termination for trench schottky device
#2680Insulated gate transistor
#2681Insulated gate transistor incorporating diode
#2682Semiconductor device
#2683Methods of forming power semiconductor devices having laterally extending base shielding regions
#2684Integrated FET and schottky device
#2685Vertical charge control semiconductor device with low output capacitance
#2686High-voltage vertical transistor with a multi-layered extended drain structure
#2687Semiconductor component including plural trench transistors with intermediate mesa regions
#2688Power semiconductor devices having linear transfer characteristics when regions therein are in velocity saturation modes and methods of forming and operating same
#2689Semiconductor device having a vertical MOS trench gate structure
#2690Laterally-diffused metal-oxide-semiconductor devices with an air gap
#2691Isolation structure for IGBT devices having an integrated diode
#2692Transistor trench with field plate structure
#2693Split-gate enhanced power MOS device
#2694Method of manufacture of super-junction power semiconductor device
#2695Manufacturing method of semiconductor device having replacement gate in trench
#2696Vertical power MOSFET device having doped regions between insulated trenches and a junction arranged therebetween
#2697Gate trench device with oxygen inserted si-layers
#2698Trench power MOSFET having a trench cavity
#2699Embedded field plate field effect transistor
#2700Semiconductor device having improved edge trench, source electrode and gate electrode structures