208315 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Recessed field plates, e.g. trench field plates, buried field plates
Structures and methods of fabricating dual gate devices
#2102SHIELDED TRENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATION
#2103Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
#2104Monolithic semiconductor switches and method for manufacturing
#2105Semiconductor device
#2106Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process
#2107Oxide terminated trench MOSFET with three or four masks
#2108Semiconductor power device having shielding electrode for improving breakdown voltage
#2109High-voltage vertical transistor with a varied width silicon pillar
#2110Schottky barrier semiconductor device
#2111Trench DMOS device with improved termination structure for high voltage applications
#2112Trench MOS device with improved termination structure for high voltage applications
#2113Super junction device with deep trench and implant
#2114Method for fabricating a shielded gate trench MOS with improved source pickup layout
#2115Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor
#2116P-CHANNEL POWER MOSFET
#2117Structure and method for forming planar gate field effect transistor with low resistance channel region
#2118Shielded gate field effect transistors
#2119Structures of and methods of fabricating split gate MIS devices
#2120Shielded gate trench (SGT) MOSFET devices and manufacturing processes
#2121SEMICONDUCTOR DEVICE
#2122Shielded Gate Trench FET with the Shield and Gate Electrodes Connected Together in Non-active Region
#2123Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method
#2124Polysilicon control etch-back indicator
#2125Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#2126Method of forming trench-gate field effect transistors
#2127Devices, components and methods combining trench field plates with immobile electrostatic charge
#2128Trench MOSFET with ultra high cell density and manufacture thereof
#2129Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#2130Method for producing a semiconductor component arrangement comprising a trench transistor
#2131Synchronous buck converter using shielded gate field effect transistors
#2132SEMICONDUCTOR DEVICE
#2133Semiconductor device including a voltage controlled termination structure and method for fabricating same
#2134Semiconductor component arrangement comprising a trench transistor
#2135Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device
#2136Super-junction trench MOSFET with resurf step oxide and the method to make the same
#2137Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric
#2138Semiconductor component and method for producing a semiconductor component
#2139SEMICONDUCTOR COMPONENT HAVING AN OXIDE LAYER
#2140Method of filling large deep trench with high quality oxide for semiconductor devices
#2141Semiconductor device and method for manufacturing the same
#2142Method of forming an insulated gate field effect transistor device having a shield electrode structure
#2143Method of forming an insulated gate field effect transistor device having a shield electrode structure
#2144Semiconductor device and power conversion apparatus using the same
#2145Semiconductor device with improved on-resistance
#2146Shielded gate trench MOSFET with increased source-metal contact
#2147Semiconductor component and method of manufacture
#2148Dual channel trench LDMOS transistors and BCD process with deep trench isolation
#2149Latch-up free vertical TVS diode array structure using trench isolation
#2150Trench MOSFET with trenched floating gates as termination
#2151Trench-gate semiconductor device
#2152Semiconductor component structure with vertical dielectric layers
#2153Power transistor with improved high-side operating characteristics and reduced resistance and related apparatus and method
#2154Field plate trench transistor and method for producing it
#2155Method and device including transistor component having a field electrode
#2156Semiconductor device and method for manufacturing
#2157Power device with improved edge termination
#2158Super-high density trench MOSFET
#2159Split gate semiconductor device with curved gate oxide profile
#2160MOS transistor with elevated gate drain capacity
#2161Checkerboarded high-voltage vertical transistor layout
#2162TRENCH TERMINATION STRUCTURE
#2163Method for forming a shielded gate trench FET
#2164Planar TMBS rectifier
#2165Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#2166Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device
#2167Configurable NP channel lateral drain extended MOS-based transistor
#2168Semiconductor device having SOI substrate
#2169Direct contact in trench with three-mask shield gate process
#2170Group III nitride semiconductor device, production method therefor, power converter
#2171Overlapping trench gate semiconductor device
#2172Semiconductor device and method of manufacturing the same
#2173Super junction trench power MOSFET device fabrication
#2174Fabrication of trench DMOS device having thick bottom shielding oxide
#2175Super junction trench power MOSFET devices
#2176Semiconductor devices with field plates
#2177Trench-gated MIS devices
#2178Power MOSFET With Recessed Field Plate
#2179Shielded gate trench MOSFET device and fabrication
#2180Shielded gate trench MOSFET device and fabrication
#2181Semiconductor structure
#2182Structure and method for forming laterally extending dielectric layer in a trench-gate FET
#2183Semiconductor device including a MOSFET and a Schottky junction
#2184Bipolar semiconductor device and manufacturing method
#2185High-voltage metal oxide semiconductor device and fabrication method thereof
#2186Shield contacts in a shielded gate MOSFET
#2187High-voltage vertical transistor with edge termination structure
#2188Semiconductor device having a floating semiconductor zone
#2189Structure and method for forming field effect transistor with low resistance channel region
#2190Method of making a trench MOSFET having improved avalanche capability using three masks process
#2191Semiconductor device with channel stop trench and method
#2192SEMICONDUCTOR DEVICE
#2193Trench MOSFET structures using three masks process
#2194Integrated power supplies and combined high-side plus low-side switches
#2195Power semiconductor devices having termination structures
#2196Semiconductor device and manufacturing method of the same
#2197Semiconductor device, method of manufacturing the same and power-supply device using the same
#2198Trench schottky diode and method for manufacturing the same
#2199PN junction and MOS capacitor hybrid resurf transistor
#2200Structure related to a thick bottom dielectric (TBD) for trench-gate devices
#2201Trench gate MOSFET and method of manufacturing the same
#2202Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#2203Reduced process sensitivity of electrode-semiconductor rectifiers
#2204Power semiconductor devices integrated with clamp diodes sharing same gate metal pad
#2205Method for forming active and gate runner trenches
#22063D channel architecture for semiconductor devices
#2207Semiconductor Power Switches Having Trench Gates
#2208Trench MOSFET semiconductor device and manufacturing method therefor
#2209Semiconductor device
#2210SEMICONDUCTOR DEVICE
#2211Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#2212Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts
#2213Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area
#2214Method for manufacturing semiconductor device, and semiconductor device
#2215Vertical transistor component
#2216Method of manufacturing a trench transistor having a heavy body region
#2217FIELD PLATE TRENCH MOSFET TRANSISTOR WITH GRADED DIELECTRIC LINER THICKNESS
#2218Trench junction barrier controlled Schottky
#2219Method for Forming Shielded Gate Trench FET with Multiple Channels
#2220Trench-gate field effect transistor with channel enhancement region and methods of forming the same
#2221Field effect transistor with self-aligned source and heavy body regions and method of manufacturing same
#2222Semiconductor device and method for fabricating the same
#2223Structure and method for forming a salicide on the gate electrode of a trench-gate FET
#2224POWER SEMICONDUCTOR DEVICE STRUCTURE FOR INTEGRATED CIRCUIT AND METHOD OF FABRICATION THEREOF
#2225MSD integrated circuits with shallow trench
#2226Semiconductor devices and methods for manufacturing a semiconductor device
#2227Power semiconductor device
#2228Power device structures and methods
#2229MOS-gated power devices, methods, and integrated circuits
#2230Structure with PN clamp regions under trenches
#2231Trench device structure and fabrication
#2232Component arrangement including a MOS transistor having a field electrode
#2233Transistor
#2234Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
#2235Semiconductor component and method of manufacture
#2236Monolithic semiconductor switches and method for manufacturing
#2237Semiconductor device
#2238METHODS FOR MAKING SEMICONDUCTOR DEVICES USING NITRIDE CONSUMPTION LOCOS OXIDATION
#2239Semiconductor device and method for manufacturing
#2240Integrated trench MOSFET with trench Schottky rectifier
#2241Method for manufacturing trench MOSFET device with low gate charge
#2242Semiconductor device and manufacturing method thereof
#2243High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance
#2244Integrated power device on a semiconductor substrate having an improved trench gate structure
#2245Power device with monolithically integrated RC snubber
#2246Semiconductor device with staggered oxide-filled trenches at edge region
#2247Junction barrier Schottky (JBS) with floating islands
#2248VTS insulated gate bipolar transistor
#2249Method for producing an integrated circuit including a trench transistor and integrated circuit
#2250Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2251Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2252Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2253Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates
#2254Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2255Trench shielding structure for semiconductor device and method
#2256Method of manufacturing semiconductor component with gate and shield electrodes in trenches
#2257Semiconductor component and method of manufacture
#2258Semiconductor device having trench shield electrode structure
#2259Contact structure for semiconductor device having trench shield electrode and method
#2260MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrinkage and performance improvement
#2261Multi-level lateral floating coupled capacitor transistor structures
#2262Semiconductor device
#2263Configuration of trenched semiconductor power device to reduce masked process
#2264Semiconductor device with trench field plate including first and second semiconductor materials
#2265Method of manufacture and structure for a trench transistor having a heavy body region
#2266High-voltage vertical transistor with a multi-gradient drain doping profile
#2267Electronic circuit for controlling a power field effect transistor
#2268Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer
#2269Semiconductor device
#2270Shielded gate trench (SGT) MOSFET devices and manufacturing processes
#2271TRENCH MOSFET WITH SHALLOW TRENCH CONTACT
#2272Transistor structure having dual shield layers
#2273TRENCH MOSFET WITH SHORT CHANNEL FORMED BY PN DOUBLE EPITAXIAL LAYERS
#2274Methods for manufacturing trench MOSFET with implanted drift region
#2275Polysilicon control etch-back indicator
#2276Power semiconductor devices and methods of manufacture
#2277Semiconductor device with channel stop trench and method
#2278High-voltage metal oxide semiconductor device and fabrication method thereof
#2279Semiconductor device comprising trench gate and buried source electrodes
#2280Semiconductor component and method for producing a semiconductor component
#2281Semiconductor component structure with vertical dielectric layers
#2282Semiconductor component with a drift zone and a drift control zone
#2283MOS transistor having an increased gate-drain capacitance
#2284Semiconductor device
#2285Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate
#2286Semiconductor device
#2287Method of forming an MOS transistor
#2288Electronic circuit control element with tap element
#2289III-nitride device with back-gate and field plate for improving transconductance
#2290Alignment of trench for MOS
#2291Structures for reducing dopant out-diffusion from implant regions in power devices
#2292High-voltage vertical transistor with a varied width silicon pillar
#2293(110)-oriented p-channel trench MOSFET having high-K gate dielectric
#2294Method for forming a semiconductor device with an isolation region on a gate electrode
#2295Semiconductor device with a trench gate structure and method for the production thereof
#2296Rectifier circuit with a voltage sensor
#2297High aspect ratio trench structures with void-free fill material
#2298Semiconductor device with a reduced band gap and process
#2299Method and structure for forming a shielded gate field effect transistor
#2300Rectifier with PN clamp regions under trenches
#2301Method for forming laterally extending dielectric layer in a trench-gate FET
#2302SEMICONDUCTOR DEVICE
#2303Method of manufacturing a bipolar transistor
#2304Method of fabricating super trench MOSFET including buried source electrode
#2305Double gate manufactured with locos techniques
#2306MOSFET switch with embedded electrostatic charge
#2307Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance
#2308Vertical drain extended MOSFET transistor with vertical trench field plate
#2309Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
#2310Method for producing a semiconductor including a foreign material layer
#2311Semiconductor component arrangement having a component with a drift zone and a drift control zone
#2312Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein
#2313Semiconductor component including a drift zone and a drift control zone
#2314Semiconductor device with field electrode and method
#2315Integrated trench MOSFET and Schottky rectifier with trench contact structure
#2316Gate pullback at ends of high-voltage vertical transistor structure
#2317TRENCH MOSFET WITH SHALLOW TRENCH FOR GATE CHARGE REDUCTION
#2318Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
#2319Super self-aligned trench MOSFET devices, methods, and systems
#2320Structure and method for forming power devices with carbon-containing region
#2321Method for manufacturing a field plate in a trench of a power transistor
#2322High speed orthogonal gate EDMOS device and fabrication
#2323Deep source electrode MOSFET
#2324High current density power field effect transistor
#2325Trench-gate LDMOS structures
#2326Method for producing a transistor component having a field plate
#2327Segmented pillar layout for a high-voltage vertical transistor
#2328Semiconductor device fabrication using spacers
#2329Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric
#2330Method of forming shielded gate FET with self-aligned features
#2331Termination structure for power devices
#2332Semiconductor device having IGBT and diode
#2333Method of fabricating a high-voltage transistor with an extended drain structure
#2334Semiconductor device
#2335Semiconductor device
#2336Trench-Gate Field Effect Transistors and Methods of Forming the Same
#2337Semiconductor component with a drift region and a drift control region
#2338Semiconductor device and method for forming same
#2339Semiconductor device structures and related processes
#2340Edge termination with improved breakdown voltage
#2341Trench transistor and method for fabricating a trench transistor
#2342Semiconductor device
#2343Power device edge termination having a resistor with one end biased to source voltage
#2344Structure and method for forming field effect transistor with low resistance channel region
#2345Method of forming a shielded gate field effect transistor
#2346Semiconductor device having a trench type high-power MISFET
#2347Structure and method for forming power devices with high aspect ratio contact openings
#2348Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same
#2349Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor
#2350Superjunction device having a dielectric termination and methods for manufacturing the device
#2351Semiconductor device with (110)-oriented silicon
#2352Trench semiconductor device of improved voltage strength
#2353Shielded gate trench FET with multiple channels
#2354Semiconductor device with dynamical avalanche breakdown characteristics and method for manufacturing a semiconductor device
#2355Semiconductor with active component and method for manufacture
#2356Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device
#2357Dielectric isolation type semiconductor device and manufacturing method therefor
#2358Lateral diffusion field effect transistor with a trench field plate
#2359Semiconductor device with vertical trench and lightly doped region
#2360Method of manufacturing a trench transistor having a heavy body region
#2361Segmented pillar layout for a high-voltage vertical transistor
#2362Semiconductor device and method of manufacturing the same
#2363Power semiconductor device and method for manufacturing same
#2364Semiconductor device
#2365Field plate trench transistor and method for producing it
#2366Method for forming shielded gate field effect transistor using spacers
#2367Method for forming trench gate field effect transistor with recessed mesas using spacers
#2368SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
#2369Method for manufacturing a semiconductor component that includes a field plate
#2370Trench MOSFET with implanted drift region
#2371Lateral power diode with self-biasing electrode
#2372MOSgated power semiconductor device with source field electrode
#2373Semiconductor device and method of fabricating the same
#2374MOSFET active area and edge termination area charge balance
#2375High density FET with integrated Schottky
#2376Trench MOSFET and method of manufacture utilizing two masks
#2377Method for manufacturing a semiconductor device
#2378TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING THREE MASKS
#2379Trench MOSFET and method of manufacture utilizing four masks
#2380Gate metal routing for transistor with checkerboarded layout
#2381Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
#2382High-voltage vertical transistor with a multi-gradient drain doping profile
#2383Trench MOSFET with trench termination and manufacture thereof
#2384Shielded gate trench FET with the shield and gate electrodes connected together in non-active region
#2385METHOD FOR PRODUCING AN INTEGRATED CIRCUIT INCLUDING A TRENCH TRANSISTOR AND INTEGRATED CIRCUIT
#2386Adaptive capacitance for transistor
#2387Stacked trench metal-oxide-semiconductor field effect transistor device
#2388Method and structure for shielded gate trench FET
#2389Semiconductor component with dynamic behavior
#2390Method of forming high density trench FET with integrated Schottky diode
#2391Semiconductor component and method for producing it
#2392Superjunction Device Having Oxide Lined Trenches and Method for Manufacturing a Superjunction Device Having Oxide Lined Trenches
#2393Semiconductor device
#2394Method for insulating a semiconducting material in a trench from a substrate
#2395Power trench gate FET with active gate trenches that are contiguous with gate runner trench
#2396Power semiconductor devices with trenched shielded split gate transistor and methods of manufacture
#2397Power semiconductor devices with shield and gate contacts and methods of manufacture
#2398SOI trench lateral IGBT
#2399ACCUFET with Schottky source contact
#2400Semiconductor device