208356 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed; Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure
Low resistance gate for power MOSFET applications and method of manufacture
#602CMOS gates with solid-solution alloy tunable work functions
#603CMOS gates with intermetallic compound tunable work functions
#604Trench-gate MOS transistor composed of multiple conductors
#605Replacement gates to enhance transistor strain
#606Multi-metal-oxide high-K gate dielectrics
#607Angled implantation for removal of thin film layers
#608Semiconductor device manufacturing method
#609Semiconductor structure and method for manufacturing the same
#610Reducing gate dielectric material to form a metal gate electrode extension
#611Dual gate CMOS semiconductor devices and methods of fabricating such devices
#612Semiconductor device and method of manufacturing semiconductor device
#613Refractory metal-based electrodes for work function setting in semiconductor devices
#614Refractory metal-based electrodes for work function setting in semiconductor devices
#615Removal of charged defects from metal oxide-gate stacks
#616Semiconductor device and manufacturing method for the same
#617Semiconductor device having metal gate patterns and related method of manufacture
#618Semiconductor device with a gate electrode having a laminate structure
#619Thin film transistor having double-layered gate electrode and method of manufacturing the thin film transistor
#620Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another
#621Semiconductor device and manufacturing method thereof
#622Semiconductor device and method of manufacture thereof
#623Semiconductor device having misfet using high dielectric constant gate insulation film and method for fabricating the same
#624Gate structures with silicide sidewall barriers and methods of manufacturing the same
#625Gate electrode forming methods using conductive hard mask
#626Field effect transistor and method of manufacturing the same
#627Reducing oxidation under a high K gate dielectric
#628Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
#629Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof
#630Refractory metal-based electrodes for work function setting in semiconductor devices
#631Dual work function metal gate integration in semiconductor devices
#632Reducing gate dielectric material to form a metal gate electrode extension
#633Method for forming a gate electrode having a metal
#634Semiconductor device having a laterally modulated gate workfunction and method of fabrication
#635Semiconductor device having a laterally modulated gate workfunction and method of fabrication
#636Display device
#637Semiconductor device realizing characteristics like a SOI MOSFET
#638Method for fabricating metal gate structures
#639Spacer-less transistor integration scheme for high-k gate dielectrics and small gate-to-gate spaces applicable to Si, SiGe strained silicon schemes
#640Method for forming a memory structure using a modified surface topography and structure thereof
#641Methods for fabricating metal gate structures
#642Method for making a semiconductor device having a metal gate electrode
#643Insulated gate transistor
#644Insulated gate transistor
#645Method for forming metal replacement gate of high performance
#646Method for fabricating semiconductor device
#647Multiple work function nanosheet field-effect transistors with differential interfacial layer thickness
#648Nanosheet devices with different types of work function metals
#649Transistors having semiconductor-metal composite gate electrodes containing different thickness interfacial dielectrics and methods of making thereof
#650Vertical fin field effect transistor with integral U-shaped electrical gate connection
#651Multi-layer work function metal gates with similar gate thickness to achieve multi-Vt for vFETS
#652Semiconductor device and method of forming the same
#653Forming a semiconductor structure for reduced negative bias temperature instability
#654Semiconductor device having a gate stack with tunable work function
#655Contact first replacement metal gate
#656Selectively deposited metal gates and method of manufacturing thereof