208356 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed; Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo with a multiple layer structure
Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth element
#302Semiconductor device having buried gate structure and method for manufacturing the same, memory cell having the same and electronic device having the same
#303Semiconductor device and method for fabricating the same
#304Thin film transistor and its manufacturing method, array substrate and its manufacturing method, and display device
#305Vertical tunneling FinFET
#306Semiconductor arrangement and formation thereof
#307Conductive cap for metal-gate transistor
#308Metallic etch stop layer in a three-dimensional memory structure
#309Semiconductor devices and methods of fabricating semiconductor devices
#310Semiconductor device and method of manufacturing the same
#311Contact structure of semiconductor device
#312Semiconductor device having electrode and manufacturing method thereof
#313Metal gate stack having TaAlCN layer
#314Semiconductor structure including at least one electrically conductive pillar, semiconductor structure including a contact contacting an outer layer of an electrically conductive structure and method for the formation thereof
#315Replacement metal gates to enhance transistor strain
#316Nonvolatile memory device and method of manufacturing the same
#317Metal oxynitride transistor devices
#318Fabrication of IGZO oxide TFT on high CTE, low retardation polymer films for LDC-TFT applications
#319Fabrication of a transistor including a tunneling layer
#320Implantation formed metal-insulator-semiconductor (MIS) contacts
#321Implantation formed metal-insulator-semiconductor (MIS) contacts
#322Metal gate and manufacturing method thereof
#323Self-aligned insulated film for high-k metal gate device
#324Structure and method for 3D FinFET metal gate
#325Manufacture method of AMOLED back plate and structure thereof
#326LTPS TFT substrate structure and method of forming the same
#327FinFET with dual workfunction gate structure
#328Reliable and robust electrical contact
#329Multi-threshold voltage devices and associated techniques and configurations
#330CMOS gate stack structures and processes
#331METHOD OF IMPROVED CA/CB CONTACT AND DEVICE THEREOF
#332Metal gate structure and method of forming the same
#333Replacement gate structures for transistor devices
#334Methods of forming metal-gate semiconductor devices with enhanced mobility of charge carriers
#335ULTRA-LOW RESISTANCE GATE STRUCTURE FOR NON-PLANAR DEVICE VIA MINIMIZED WORK FUNCTION MATERIAL
#336Semiconductor device with improved field plate
#337Semiconductor device with improved field plate
#338Methods of fabricating semiconductor devices
#339Gate structure having designed profile and method for forming the same
#340Semiconductor device, and method of manufacturing semiconductor device
#341Display device
#342Replacement metal gate
#343Manufacturing method of metal oxide semiconductor transistor
#344Semiconductor structure and fabricating method thereof
#345Semiconductor device and method for manufacturing thereof
#346Replacement metal gates to enhance tranistor strain
#347Metal gate structure and manufacturing method thereof
#348Threshold voltage control for mixed-type non-planar semiconductor devices
#349GATE STRUCTURES FOR SEMICONDUCTOR DEVICES WITH A CONDUCTIVE ETCH STOP LAYER
#350Semiconductor structure having common gate
#351Integrated circuits with resistors
#352Method of semiconductor integrated circuit fabrication
#353Semiconductor device with surface insulating film
#354Semiconductor structures and methods for multi-level work function
#355Semiconductor device and method for manufacturing same
#356Gate structure and method for fabricating the same
#357Replacement gate structure for enhancing conductivity
#358Replacement gate structure for enhancing conductivity
#359Self-aligned contact structure
#360Schottky gated transistor with interfacial layer
#361Semiconductor devices
#362Metal gate structure and method of formation
#363Semiconductor devices and methods for manufacturing the same
#364LDMOS with improved breakdown voltage and with non-uniformed gate dielectric and gate electrode
#365Semiconductor device having three-dimensional structure and method of manufacturing the same
#366Method of forming a singe metal that performs N and P work functions in high-K/metal gate devices
#367STRUCTURE AND METHOD TO OBTAIN EOT SCALED DIELECTRIC STACKS
#368Semiconductor device and method of fabricating the same
#369Gate electrode of a semiconductor device, and method for producing same
#370Semiconductor arrangement and formation thereof
#371Etch chemistries for metallization in electronic devices
#372Work function metal fill for replacement gate fin field effect transistor process
#373Semiconductor structure and manufacturing method thereof
#374Modified self-aligned contact process and semiconductor device
#375Transistor having tungsten-based buried gate structure, method for fabricating the same
#376Semiconductor device and fabricating method thereof
#377Semiconductor device and method for manufacturing thereof
#378Self-aligned contact structure
#379Semiconductor devices including trench walls having multiple slopes
#380Semiconductor device and method for manufacturing the same
#381SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES
#382Cobalt-containing conductive layers for control gate electrodes in a memory structure
#383Stratified gate dielectric stack for gate dielectric leakage reduction
#384Semiconductor device having electrode made of high work function material and method of manufacturing the same
#385INTEGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME HAVING A REPLACEMENT GATE STRUCTURE
#386Sandwich silicidation for fully silicided gate formation
#387Variable length multi-channel replacement metal gate including silicon hard mask
#388Semiconductor devices
#389Transistors with field plates resistant to field plate material migration and methods of their fabrication
#390Array substrate including oxide thin film transistor and method of fabricating the same
#391Method and device for self-aligned contact on a non-recessed metal gate
#392SUPERIOR INTEGRITY OF A HIGH-K GATE STACK BY FORMING A CONTROLLED UNDERCUT ON THE BASIS OF A WET CHEMISTRY
#393Metal oxide semiconductor transistor and manufacturing method thereof
#394Nitride semiconductor device and method for manufacturing same
#395BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES
#396Thin film transistor array substrate and method of manufacturing the same
#397Integrated circuit and method for fabricating the same having a replacement gate structure
#398Mechanism for forming metal gate structure
#399Semiconductor device
#400Method for forming a semiconductor device having a metal gate recess
#401Replacement metal gate structure for CMOS device
#402Metal gate stack having TaAlCN layer
#403Self-aligned gate contact structure
#404Display unit and electronic apparatus
#405Methods of forming replacement gate structures for transistors and the resulting devices
#406Nonvolatile memory device and method of manufacturing the same
#407Method of Fabricating a Semiconductor Device
#408MOL INSITU PT REWORK SEQUENCE
#409Structure and method for nFET with high k metal gate
#410Silicided semiconductor structure and method of forming the same
#411Self-aligned insulated film for high-k metal gate device
#412Integrated circuits with resistors
#413Semiconductor Devices Having Partially Oxidized Gate Electrodes
#414Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor
#415Transistor and semiconductor structure
#416SEMICONDUCTOR DEVICE WITH OXYGEN-CONTAINING METAL GATES
#417SEMICONDUCTOR DEVICES
#418Method for forming gate electrode with depletion suppression and tunable workfunction
#419Metal gate stack having TiAICN as work function layer and/or blocking/wetting layer
#420Method of forming a single metal that performs N and P work functions in high-K/metal gate devices
#421Method of scavenging impurities in forming a gate stack having an interfacial layer
#422Methods and devices for enhancing mobility of charge carriers
#423Buffer layer on semiconductor devices
#424Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices
#425Metal gate structures for field effect transistors and method of fabrication
#426Interface for metal gate integration
#427METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING ETCH STOP DIELECTRIC LAYERS AND RELATED DEVICES
#428Integrated circuit metal gate structure having tapered profile
#429Semiconductor device having electrode and manufacturing method thereof
#430Semiconductor device and fabricating method thereof
#431Integrated circuits with improved gate uniformity and methods for fabricating same
#432Changing effective work function using ion implantation during dual work function metal gate integration
#433SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
#434Vertical type semiconductor devices including a metal gate and methods of forming the same
#435Native PMOS device with low threshold voltage and high drive current and method of fabricating the same
#436Field effect transistor with channel core modified to reduce leakage current and method of fabrication
#437N/P metal crystal orientation for high-k metal gate Vt modulation
#438Semiconductor device having a metal gate recess
#439Method for producing a semiconductor device and semiconductor device
#440Integrated circuits with improved gate uniformity and methods for fabricating same
#441Bondable top metal contacts for gallium nitride power devices
#442Semiconductor device including fluorine-free tungsten barrier layer and method for fabricating the same
#443Non-volatile memory structure employing high-k gate dielectric and metal gate
#444Semiconductor device including a trench in a semiconductor substrate and method of manufacturing a semiconductor device
#445Replacement gate electrode with planar work function material layers
#446Contact structure of semiconductor device
#447Integrated circuit and method for fabricating the same having a replacement gate structure
#448Scavenging metal stack for a high-K gate dielectric
#449Scavenging metal stack for a high-K gate dielectric
#450Methods for fabricating integrated circuits with drift regions and replacement gates
#451Semiconductor structure and process thereof
#452Integrated circuit and method for fabricating the same having a replacement gate structure
#453Stratified gate dielectric stack for gate dielectric leakage reduction
#454STRATIFIED GATE DIELECTRIC STACK FOR GATE DIELECTRIC LEAKAGE REDUCTION
#455STRUCTURE AND METHOD FOR NFET WITH HIGH K METAL GATE
#456ROM arrays having memory cell transistors programmed using metal gates
#457Semiconductor devices and method of manufacturing the same
#458Nitride semiconductor device and method for manufacturing same
#459Use of band edge gate metals as source drain contacts
#460USE OF BAND EDGE GATE METALS AS SOURCE DRAIN CONTACTS
#461Scaling of metal gate with aluminum containing metal layer for threshold voltage shift
#462Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductor
#463Metal oxide semiconductor transistor and manufacturing method thereof
#464Non-volatile memory structure employing high-k gate dielectric and metal gate
#465Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layer
#466Nonvolatile memory device and method of manufacturing the same
#467Self-aligned insulated film for high-k metal gate device
#468SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME
#469Method of forming a buffer layer
#470SEMICONDUCTOR DEVICE
#471Wiring structure, display apparatus, and semiconductor device
#472Replacement gate electrode with planar work function material layers
#473Structure and method to obtain EOT scaled dielectric stacks
#474Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices
#475Gate-last fabrication of quarter-gap MGHK FET
#476Method for fabricating transistor with high-K dielectric sidewall spacer
#477DUAL METAL GATE CORNER
#478SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#479Display device and electronic apparatus
#480Mol insitu Pt rework sequence
#481LDMOS with two gate stacks having different work functions for improved breakdown voltage
#482Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto
#483Integrated circuits with resistors and methods of forming the same
#484Semiconductor device
#485Semiconductor device and manufacturing method of semiconductor device
#486Strained structure of a p-type field effect transistor
#487Trench MOSFET with trench contact holes and method for fabricating the same
#488Device with aluminum surface protection
#489Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry
#490Methods of forming gate structure and methods of manufacturing semiconductor device including the same
#491Semiconductor device and method of producing same
#492Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
#493Structure and method for dual work function metal gate CMOS with selective capping
#494Ultra-low-cost three mask layers trench MOSFET and method of manufacture
#495REPLACEMENT GATES TO ENHANCE TRANSISTOR STRAIN
#496Gate-last fabrication of quarter-gap MGHK FET
#497Surrounding gate transistor (SGT) structure
#498Semiconductor device and manufacturing method for the same
#499Semiconductor device and method of forming the same
#500Method for fabricating a semiconductor device having an epitaxial channel and transistor having same
#501Display device
#502Semiconductor device having a blocking structure and method of manufacturing the same
#503Semiconductor devices and methods of manufacturing the same
#504Method for manufacturing semiconductor device
#505Contact formation method, semiconductor device manufacturing method, and semiconductor device
#506Method and apparatus of forming a gate
#507Hydrogen ion-sensitive field effect transistor and manufacturing method thereof
#508High temperature anneal for aluminum surface protection
#509Structure and method to obtain EOT scaled dielectric stacks
#510Method for forming high-K metal gate device
#511SCALING OF METAL GATE WITH ALUMINUM CONTAINING METAL LAYER FOR THRESHOLD VOLTAGE SHIFT
#512Metal gate structure and method of manufacturing same
#513Semiconductor device and method for manufacturing the same
#514Semiconductor device and method for manufacturing the same
#515Refractory metal nitride capped electrical contact and method for frabricating same
#516INTEGRATED CIRCUIT MANUFACTURING METHOD AND INTEGRATED CIRCUIT
#517Gate structure for field effect transistor
#518Semiconductor device and method of manufacturing the same
#519Method of forming low resistance gate for power MOSFET applications
#520SEMICONDUCTOR DEVICE WITH METAL GATE
#521Method for fabricating semiconductor device
#522Semiconductor device including a gate insulating film having a metal oxide layer having trap levels
#523Nonvolatile memory device and method of manufacturing the same
#524Fin field effect transistor and method of manufacturing the same
#525Silicided semiconductor structure and method of forming the same
#526Method for tuning the threshold voltage of a metal gate and high-k device
#527Dual high-k oxides with sige channel
#528Direct contact between high-κ/metal gate and wiring process flow
#529Integration scheme for an NMOS metal gate
#530Method for PFET enhancement
#531Self-aligned replacement metal gate process for QWFET devices
#532Tunable gate electrode work function material for transistor applications
#533N/P metal crystal orientation for high-K metal gate Vt modulation
#534SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#535Semiconductor device
#536Method of defining gate structure height for semiconductor devices
#537Method of manufacturing a FET gate
#538Method of forming a single metal that performs N and P work functions in high-K/metal gate devices
#539Semiconductor device and manufacturing method for the same
#540Field effect transistor having a gate structure with a first section above a center portion of the channel region and having a first effective work function and second sections above edges of the channel region and having a second effective work function
#541Integrated circuit metal gate structure and method of fabrication
#542Changing effective work function using ion implantation during dual work function metal gate integration
#543SEMICONDUCTOR DEVICE
#544Semiconductor device including gate electrode having a laminate structure and plug electrically connected thereto
#545Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance
#546Method for manufacturing semiconductor device and semiconductor device
#547Display device
#548Extremely-thin silicon-on-insulator transistor with raised source/drain
#549METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH DIFFERENT METALLIC GATES
#550Mobility Enhanced FET Devices
#551SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#552Metal gate structure and method of manufacturing same
#553METHOD FOR FABRICATING A METAL HIGH DIELECTRIC CONSTANT TRANSISTOR WITH REVERSE-T GATE
#554Transistor with high-k dielectric sidewall spacer
#555Subgroundrule space for improved metal high-k device
#556Metal gate transistor and polysilicon resistor and method for fabricating the same
#557Method for fabricating a semiconductor device having an epitaxial channel and transistor having same
#558Complementary metal oxide semiconductor device fabrication method
#559Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
#560Method of making transistor gates with controlled work function
#561Low temperature polysilicon oxide process for high-K dielectric/metal gate stack
#562INTERFACIAL LAYER FOR HAFNIUM-BASED HIGH-K/METAL GATE TRANSISTORS
#563Multiple layer floating gate non-volatile memory device
#564Semiconductor device manufactured by removing sidewalls during replacement gate integration scheme
#565Integration scheme for an NMOS metal gate
#566Semiconductor device and method of fabricating the same
#567SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#568Transistors with high-k dielectric spacer liner to mitigate lateral oxide encroachement
#569FABRICATING DUAL LAYER GATE ELECTRODES HAVING POLYSILICON AND A WORKFUNCTION METAL
#570Angled implantation for removal of thin film layers
#571Replacement gates to enhance transistor strain
#572Fin field effect transistor and method of manufacturing the same
#573Method for making a transistor with a stressor
#574Extremely-thin silicon-on-insulator transistor with raised source/drain
#575Thin gate electrode CMOS devices and methods of fabricating same
#576SEMICONDUCTOR DEVICE WITH METAL GATE AND METHOD FOR FABRICATING THE SAME
#577Semiconductor device and method of manufacturing the same
#578SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#579Method of manufacturing a semiconductor device with a gate electrode having a laminate structure
#580Semiconductor device comprising an n-channel and p-channel MISFET
#581SEMICONDUCTOR DEVICE
#582LOW TEMPERATURE POLY OXIDE PROCESSES FOR HIGH-K/METAL GATE FLOW
#583Semiconductor device including complementary MOS transistor having a strained Si channel
#584Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same
#585METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#586Mobility Enhanced FET Devices
#587Reducing oxidation under a high K gate dielectric
#588Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
#589Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies
#590Tunable gate electrode work function material for transistor applications
#591Method of integrating metal-containing films into semiconductor devices
#592Method for manufacturing semiconductor device and semiconductor device
#593Spacer-less transistor integration scheme for high-K gate dielectrics and small gate-to-gate spaces applicable to Si, SiGe and strained silicon schemes
#594Method for making a vertical MOS transistor with embedded gate
#595METHODS OF FORMING METAL-CONTAINING GATE STRUCTURES
#596Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
#597Semiconductor device and method of manufacture thereof
#598Dual work function metal gate structure and related method of manufacture
#599SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#600SEALING SPACER TO REDUCE OR ELIMINATE LATERAL OXIDATION OF A HIGH-K GATE DIELECTRIC