208358 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed; Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi being a silicide layer, e.g. TiSi
Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
#602Semiconductor device and method of manufacturing the same
#603Method to form a metal silicide gate device
#604Semiconductor device and manufacturing method thereof
#605CMOS device with metal and silicide gate electrodes and a method for making it
#606Method for fabricating semiconductor devices having silicided electrodes
#607MOS transistor gates with thin lower metal silicide and methods for making the same
#608Semiconductor device
#609Capacitor constructions
#610Semiconductor device including multiple wiring layers and circuits operating in different frequency bands
#611Method of manufacturing semiconductor devices
#612Process for fabricating a transistor with a metal gate, and corresponding transistor
#613Semiconductor device and method of manufacturing the same
#614Method of fabricating MOS transistor using total gate silicidation process
#615Methods of filling horizontally-extending openings of integrated assemblies
#616Method for manufacturing multi-voltage devices using high-K-metal-gate (HKMG) technology
#617Low leakage FET
#618Low resistance conductive contacts
#619Integrated circuit structure without gate contact and method of forming same
#620System and method for source-drain extension in FinFETs
#621Tungsten silicide nitride films and methods of formation
#622MOL contact metallization scheme for improved yield and device reliability
#623Memory device and method for manufacturing the same
#624Low resistance replacement metal gate structure
#625Semiconductor apparatus and manufacturing method of the same
#626Integrated circuits with memory cells and methods of manufacturing the same
#627Method for manufacturing a contact for a semiconductor component and related structure