208358 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed; Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi being a silicide layer, e.g. TiSi
Semiconductor devices, transistors, and methods of manufacture thereof
#302Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
#303Electropositive metal containing layers for semiconductor applications
#304Semiconductor device and method for manufacturing the same
#305Insulated gate bipolar transistor structure having low substrate leakage
#306Salicide formation using a cap layer
#307METAL SILICIDE NANOWIRES AND METHODS OF THEIR PRODUCTION
#308SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF
#309Production method for semiconductor device
#310Semiconductor device having metal gate electrode and method of fabrication thereof
#311SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS THEREFOR
#312Semiconductor device and method for manufacturing the same
#313CMOS semiconductor device and method for manufacturing the same
#314Method of forming metal silicide regions on a semiconductor device
#315Method for Manufacturing Full Silicide Metal Gate Bulk Silicon Multi-Gate Fin Field Effect Transistors
#316Metal oxide semiconductor having epitaxial source drain regions and method of manufacturing same using dummy gate process
#317METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
#318FET with FUSI gate and reduced source/drain contact resistance
#319Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping
#320Semiconductor integrated circuit device and a method of manufacturing the same
#321Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto
#322Integrated circuits with resistors and methods of forming the same
#323Gate structure including a metal silicide pattern in which an upper surface portion of the metal silicide pattern includes concavo-convex portions and semiconductor devices including the same
#324CMOS Transistor with dual high-k gate dielectric
#325Methods of forming silicide regions and resulting MOS devices
#326CMOS Transistor with dual high-k gate dielectric and method of manufacture thereof
#327Method for forming metal semiconductor alloys in contact holes and trenches
#328Semiconductor device and method for manufacturing the same
#329High-K/metal gate stack using capping layer methods, IC and related transistors
#330Semiconductor device
#331High aspect ratio trench structures with void-free fill material
#332Semiconductor device and manufacturing method of semiconductor device
#333UMOS SEMICONDUCTOR DEVICES FORMED BY LOW TEMPERATURE PROCESSING
#334Semiconductor devices including silicide regions and methods of fabricating the same
#335Methods to reduce gate contact resistance for AC reff reduction
#336SEMICONDUCTOR DEVICE
#337Self-aligned silicidation for replacement gate process
#338Method for forming a nickelsilicide FUSI gate
#339Interface structure for channel mobility improvement in high-k metal gate stack
#340METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING DUAL FULLY-SILICIDED GATE
#341Semiconductor device and method for manufacturing the same
#342Semiconductor device and method of forming the same
#343Method for fabricating a semiconductor device having an epitaxial channel and transistor having same
#344Semiconductor device and method of manufacturing the same
#345FET with FUSI Gate and Reduced Source/Drain Contact Resistance
#346Semiconductor device manufacturing method
#347Semiconductor device and manufacturing process therefor
#348Semiconductor integrated circuit device and a method of manufacturing the same
#349Method and apparatus of forming a gate
#350Semiconductor device and manufacturing the same
#351Method to attain low defectivity fully silicided gates
#352METHOD OF CONTROLLING GATE THICKNESSES IN FORMING FUSI GATES
#353Semiconductor device and method of manufacturing the same
#354METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#355LDMOS using a combination of enhanced dielectric stress layer and dummy gates
#356Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof
#357Methods of forming silicide regions and resulting MOS devices
#358Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping
#359Method for manufacturing semiconductor device
#360Semiconductor integrated circuit device and a method of manufacturing the same
#361Semiconductor device having a stress-inducing layer between channel region and source and drain regions
#362Semiconductor device and fabrication method thereof
#363Metal silicide nanowires and methods of their production
#364Semiconductor device including a MOS transistor and production method therefor
#365Semiconductor device and method for manufacturing the same
#366CMOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#367SUBSTRATE CLEANING METHOD FOR REMOVING OXIDE FILM
#368Semiconductor device and method for manufacturing the same
#369METHOD FOR FORMING W-BASED FILM, METHOD FOR FORMING GATE ELECTRODE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#370Semiconductor device and method of fabricating the same
#371Partially and fully silicided gate stacks
#372SURFACE TREATMENT APPARATUS AND SURFACE TREATMENT METHOD
#373MOSFET, METHOD OF FABRICATING THE SAME, CMOSFET, AND METHOD OF FABRICATING THE SAME
#374Power device structures and methods
#375MOS-gated power devices, methods, and integrated circuits
#376Semiconductor device and method for manufacturing the same
#377Surrounding gate transistor semiconductor device
#378SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#379Semiconductor device and manufacturing method of the same
#380Structure for facilitating the simultaneous silicidation of a polysilicon gate and source/drain of a semiconductor device
#381Metal silicide nanowires and methods for their production
#382High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance
#383MOSFET with multiple fully silicided gate and method for making the same
#384SEMICONDUCTOR DEVICE AND MANUFACTURING THE SAME
#385Semiconductor device and manufacturing the same
#386Semiconductor device manufacturing method and semiconductor device
#387Semiconductor device and method for manufacturing the same
#388SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#389Method for manufacturing a P-type MOS transistor, method for manufacturing a CMOS-type semiconductor apparatus having the P-type MOS transistor, and CMOS-type semiconductor apparatus manufactured using the manufacturing method
#390High aspect ratio trench structures with void-free fill material
#391FUSI integration method using SOG as a sacrificial planarization layer
#392Structure, design structure and method of manufacturing dual metal gate Vt roll-up structure
#393SEMICONDUCTOR DEVICE
#394Semiconductor device including gate electrode having a laminate structure and plug electrically connected thereto
#395MOSFET switch with embedded electrostatic charge
#396Method for manufacturing semiconductor device and semiconductor device
#397Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate process
#398Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devices Having Independent Polysilicon Gate Thicknesses, and Related Device
#399Semiconductor device manufacturing method
#400Method of manufacturing semiconductor device
#401Modulation of Tantalum-Based Electrode Workfunction
#402CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT
#403Fabricating Method of Semiconductor Device
#404Semiconductor device and manufacturing process therefor
#405Semiconductor device
#406Semiconductor device and method for manufacturing same
#407SiC MOSFETs and self-aligned fabrication methods thereof
#408Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuit
#409STRUCTURE AND METHOD TO MAKE HIGH PERFORMANCE MOSFET WITH FULLY SILICIDED GATE
#410Semiconductor integrated circuit device and a method of manufacturing the same
#411Semiconductor device and method of manufacturing the same
#412Method for manufacturing semiconductor device
#413Method for fabricating a semiconductor device having an epitaxial channel and transistor having same
#414METHOD OF FORMING TASIN FILM
#415Method for forming CMOS transistors having FUSI gate electrodes and targeted work functions
#416Structure and method to fabricate MOSFET with short gate
#417Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant film
#418Low temperature polysilicon oxide process for high-K dielectric/metal gate stack
#419Methods for full gate silicidation of metal gate structures
#420Semiconductor device with metal silicides having different phases
#421Semiconductor device and method for manufacturing the same
#422Method of Fabricating Semiconductor Device
#423SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#424INTEGRATED CIRCUIT AND METHOD FOR MAKING AN INTEGRATED CIRCUIT
#425Method of manufacturing MISFET with low contact resistance
#426Semiconductor device and manufacturing process therefor
#427HIGH-K/METAL GATE STACK USING CAPPING LAYER METHODS, IC AND RELATED TRANSISTORS
#428Semiconductor device and method for manufacturing the same
#429Semiconductor device and method for manufacturing the same
#430Semiconductor device and method for manufacturing the same
#431METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH DUAL FULLY SILICIDED GATE
#432Semiconductor device and fabrication method thereof
#433Damascene gate field effect transistor with an internal spacer structure
#434Semiconductor Device
#435MOS devices with multi-layer gate stack
#436FUSI integration method using SOG as a sacrificial planarization layer
#437Semiconductor device and manufacturing the same
#438Partially and fully silicided gate stacks
#439Fully and uniformly silicided gate structure and method for forming same
#440Semiconductor integrated circuit device and a method of manufacturing the same
#441Full silicide gate for CMOS
#442Method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device
#443Semiconductor device with forwardly tapered P-type FET gate electrode and reversely tapered N-type FET gate electrode and method of manufacturing same
#444Semiconductor Device and Manufacturing Method Thereof
#445SEMICONDUCTOR DEVICE
#446Semiconductor device and manufacturing method thereof
#447Metal gates of PMOS devices having high work functions
#448Hybrid Fully-Silicided (FUSI)/Partially-Silicided (PASI) Structures
#449Method for forming a nickelsilicide FUSI gate
#450Hybrid Fully-Silicided (FUSI)/Partially-Silicided (PASI) Structures
#451Semiconductor device manufacturing method
#452Method of manufacturing a semiconductor device including a LaAIOlayer
#453Semiconductor device and fabrication method thereof
#454USE OF LOW TEMPERATURE ANNEAL TO PROVIDE LOW DEFECT GATE FULL SILICIDATION
#455Use of dopants to provide low defect gate full silicidation
#456Semiconductor device and method of manufacturing semiconductor device
#457Semiconductor device and method for fabricating the same
#458Semiconductor device manufactured using a gate silicidation involving a disposable chemical/mechanical polishing stop layer
#459Method of manufacturing a semiconductor device with a gate electrode having a laminate structure
#460Method of forming a silicided gate utilizing a CMP stack
#461Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device
#462MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#463Semiconductor structure for low parasitic gate capacitance
#464Semiconductor device and method for manufacturing the same
#465LOW TEMPERATURE POLY OXIDE PROCESSES FOR HIGH-K/METAL GATE FLOW
#466Silicided metal gate for multi-threshold voltage configuration
#467Semiconductor Device and Manufacturing Method Thereof
#468Method of manufacturing semiconductor device
#469Method of manufacturing semiconductor device
#470BARRIER DIELECTRIC STACK FOR SEAM PROTECTION
#471Method for forming fully silicided gate electrode in a semiconductor device
#472Semiconductor device including complementary MOS transistor having a strained Si channel
#473Selective incorporation of charge for transistor channels
#474Semiconductor device and method of fabricating the same
#475Semiconductor device and method for manufacturing the same
#476Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof
#477Formation of fully silicided gate with oxide barrier on the source/drain silicide regions
#478Process method to optimize fully silicided gate (FUSI) thru PAI implant
#479Semiconductor device and manufacturing method of semiconductor device
#480Gate electrode silicidation process
#481Method for manufacturing insulated gate field effect transistor
#482Method of fabricating a MOS device with non-SiOgate dielectric
#483Method for forming fully silicided gate electrodes and unsilicided poly resistors
#484Semiconductor device and method for manufacturing the same
#485Dual gate CMOS fabrication
#486Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies
#487NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric
#488SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#489Semiconductor device comprising a doped metal comprising main electrode
#490Semiconductor device and method for fabricating the same
#491Methods of fabricating a transistor gate including cobalt silicide
#492Fully and uniformly silicided gate structure and method for forming same
#493Semiconductor device and method for fabricating the same
#494Semiconductor device
#495CMOS device with metal and silicide gate electrodes and a method for making it
#496Work function adjustment on fully silicided (FUSI) gate
#497Semiconductor device and method for manufacturing the same
#498Semiconductor device with reduced diffusion of workfunction modulating element
#499Polysilicon levels for silicided structures including MOSFET gate electrodes and 3D devices
#500Semiconductor device and fabrication method thereof
#501Different embedded strain layers in PMOS and NMOS transistors and a method of forming the same
#502Method of making FUSI gate and resulting structure
#503Semiconductor device and manufacturing method thereof
#504Semiconductor device and method for manufacturing the same
#505Semiconductor device and method for manufacturing the same
#506Semiconductor device
#507Semiconductor structure with enhanced performance using a simplified dual stress liner configuration
#508SEMICONDUCTOR STRUCTURE INCLUDING MULTIPLE STRESSED LAYERS
#509Semiconductor device and method for manufacturing the same
#510Fully Silicided Gate Electrodes and Method of Making the Same
#511Semiconductor device and method of manufacture thereof
#512Method of Manufacturing a Semiconductor Device
#513Semiconductor device and fabrication method thereof
#514LDMOS using a combination of enhanced dielectric stress layer and dummy gates
#515SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#516Methods of forming silicide regions and resulting MOS devices
#517Method for fabricating semiconductor device
#518Semiconductor device and manufacturing method thereof
#519Method for forming thermal stable silicide using surface plasma treatment
#520Semiconductor device
#521SEMICONDUCTOR DEVICE
#522Semiconductor device and method of manufacturing the same
#523SEMICONDUCTOR DEVICES HAVING SILICIDED ELECTRODES
#524Multilayered semiconductor structure containing a MISFET, a resistor, a capacitor, and an inductor
#525Manufacturing method of semiconductor device
#526Selective incorporation of charge for transistor channels
#527MOS device with multi-layer gate stack
#528FUSI integration method using SOG as a sacrificial planarization layer
#529Semiconductor integrated circuit device and a method of manufacturing the same
#530Method for gate electrode height control
#531Semiconductor device with silicide-containing gate electrode and method of fabricating the same
#532Method of manufacturing a semiconductor structure
#533Semiconductor device and manufacturing method thereof
#534Semiconductor device and method of fabricating the same
#535Semiconductor device and method of manufacturing the same
#536Silicided recessed silicon
#537Manufacturing method of semiconductor device
#538Semiconductor device including fully-silicided (FUSI) gate electrodes
#539Methods of fabricating a fully silicided gate and semiconductor memory device having the same
#540Methods of fabricating fully silicide gate and semiconductor memory device having the same
#541Semiconductor device and method for fabricating the same
#542Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor
#543Semiconductor device
#544INTEGRATED CIRCUIT CONTAINING POLYSILICON GATE TRANSISTORS AND FULLY SILICIDIZED METAL GATE TRANSISTORS
#545Silicided recessed silicon
#546Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors
#547Method to obtain fully silicided poly gate
#548Semiconductor device and method for manufacturing the same
#549Manufacturing method for forming all regions of the gate electrode silicided
#550Method for forming a fully germano-silicided gate MOSFET and devices obtained thereof
#551Method for forming a fully silicided gate and devices obtained thereof
#552MOSFET with multiple fully silicided gate and method for making the same
#553Method to obtain fully silicided poly gate
#554Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound
#555Thermally stable fully silicided Hf silicide metal gate electrode
#556High performance CMOS with metal-gate and Schottky source/drain
#557Semiconductor device and manufacturing the same
#558Method for forming fully silicided gates and devices obtained thereof
#559Gate material for semiconductor device fabrication
#560Method of manufacturing semiconductor device having conductive thin films
#561Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method
#562Transistors and methods of manufacture thereof
#563Method of manufacturing semiconductor device
#564Semiconductor device having metal gate patterns and related method of manufacture
#565Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors
#566Semiconductor device having a dual gate electrode and methods of forming the same
#567Semiconductor device with a gate electrode having a laminate structure
#568Methods of forming silicide
#569MOS transistor with fully silicided gate
#570Semiconductor device and method of manufacturing the same
#571Metal gate engineering for surface P-channel devices
#572Self-forming metal silicide gate for CMOS devices
#573Method of manufacturing a semiconductor device and semiconductor device obatined with such a method
#574Semiconductor device and fabrication method thereof
#575Method for fabricating dual work function metal gates
#576Semiconductor device and method of manufacture thereof
#577Barrier dielectric stack for seam protection
#578Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
#579Semiconductor device and manufacturing method therefor
#580Method of fabricating semiconductor device, and semiconductor device
#581Methods of forming field effect transistors having metal silicide gate electrodes
#582Field effect transistor including damascene gate with an internal spacer structure
#583Semiconductor device and method for the preparation thereof
#584Silicon composition in CMOS gates
#585Semiconductor device and manufacturing method thereof
#586Transistor with high dielectric constant gate and method for forming the same
#587Semiconductor device and method for manufacturing the same
#588Semiconductor device and method of manufacturing the same
#589Gate material for semiconductor device fabrication
#590Metal gate engineering for surface p-channel devices
#591Semiconductor integrated circuit device and a method of manufacturing the same
#592Method of forming MOS transistor having fully silicided metal gate electrode
#593Method for fabricating semiconductor device
#594CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof
#595CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
#596Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereof
#597Method of forming silicided gate structure
#598Method for forming narrow gate structures on sidewalls of a lithographically defined sacrificial material
#599Semiconductor device having a fully silicided gate electrode and method of manufacture therefor
#600Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same