208360 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed; Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
Air-gap top spacer and self-aligned metal gate for vertical FETs
#302Method for manufacturing semiconductor structure
#303Semiconductor memory device and method of manufacturing the same
#304Etch stop for airgap protection
#305Semiconductor device
#306Airgap spacers
#307Nonvolatile memory device and method for manufacturing the same
#308FinFET with source/drain structure
#309Semiconductor device and fabricating method thereof
#310Method for fabricating a memory device having two contacts
#311Image-capturing device and image-capturing method
#312Buried bus and related method
#313Etch stop for airgap protection
#314Integrated circuit device and method of manufacturing the same
#315Preventing leakage inside air-gap spacer during contact formation
#316Memory device and fabricating method thereof
#317Semiconductor storage device and manufacturing method thereof
#318Semiconductor device blocking leakage current and method of forming the same
#319Field effect transistor
#320Semiconductor structure having source/drain gouging immunity
#321Non-planar exciton transistor (BiSFET) and methods for making
#322Semiconductor device having a shallow trench isolation structure and methods of forming the same
#323Air gap spacer integration for improved fin device performance
#324Conformal deposition of silicon carbide films
#325Air-gap offset spacer in FinFET structure
#326Semiconductor device having a gap defined therein
#327Semiconductor device with low-K spacers
#328Transistor, semiconductor device and method of manufacturing the same
#329Semiconductor device comprising epitaxially grown semiconductor material and an air gap
#330Nonvolatile semiconductor memory device and method for manufacturing same
#331Air-spacer MOS transistor
#332Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance
#333Methods of forming a semiconductor device with low-k spacers and the resulting device
#334Semiconductor devices and methods fabricating same
#335Remote plasma based deposition of SiOC class of films
#336SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#337Semiconductor devices and method of manufacturing the same
#338Parasitic capacitance reduction in MOSFET by airgap ild
#339SEALED AIR GAP FOR SEMICONDUCTOR CHIP
#340Method of fabricating semiconductor device
#341Sealed air gap for semiconductor chip
#342MOS transistor, manufacturing method thereof, and semiconductor device
#343Non-volatile semiconductor memory device and method of manufacturing the same
#344Semiconductor device and fabrication thereof
#345High-k/metal gate MOSFET with reduced parasitic capacitance
#346FIELD EFFECT TRANSISTOR WITH REDUCED OVERLAP CAPACITANCE
#347Method of fabricating a semiconductor device
#348High-k/metal gate MOSFET with reduced parasitic capacitance
#349Non-volatile semiconductor memory device and method of manufacturing the same
#350Semiconductor device and fabrication thereof
#351MOSFET STRUCTURE WITH ULTRA-LOW K SPACER
#352Memory device and method of manufacturing the same
#353GATE ELECTRODE FORMING METHOD FOR SEMICONDUCTOR DEVICE
#354Design Structure Incorporating Semiconductor Device Structures with Voids
#355Semiconductor device structures incorporating voids and methods of fabricating such structures
#356Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same
#357MOSFET structure with ultra-low K spacer
#358SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#359Method of forming fet with T-shaped gate
#360Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same
#361Vertical transport FET devices having air gap top spacer
#362Vertical FET transistor with reduced source/drain contact resistance
#363Semiconductor structure cutting process and structures formed thereby
#364Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby
#365Field effect transistor having an air-gap gate sidewall spacer and method
#366Semiconductor device and method for fabricating the same
#367Forming air-gap spacer for vertical field effect transistor
#368Air gap and air spacer pinch off
#369Devices and methods of improving device performance through gate cut last process
#370Air gap spacer for metal gates
#371Air gap spacer between contact and gate region
#372Method for manufacturing semiconductor device
#373Airgap spacers
#374FET with air gap spacer for improved overlap capacitance
#375TSV structure having insulating layers with embedded voids
#376Selective epitaxial overgrowth comprising air gaps