208360 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed; Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
INVERTED GATE CUT REGION
#2Dual Gate Structures For Semiconductor Devices
#3Semiconductor Devices with Air Gaps and the Method Thereof
#4SRAM SPEED AND MARGIN OPTIMIZATION VIA SPACER TUNING
#5AIR SPACER FORMATION WITH A SPIN-ON DIELECTRIC MATERIAL
#6MULTI-GATE DEVICE AND RELATED METHODS
#7SEMICONDUCTOR DEVICES WITH AIR GATE SPACER AND AIR GATE CAP
#8INSULATING CAP ON CONTACT STRUCTURE
#9Air gap in inner spacers and methods of fabricating the same in field-effect transistors
#10Air Gap Seal for Interconnect Air Gap and Method of Fabricating Thereof
#11NANOSHEET FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
#12AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME
#13AIR SPACERS FOR SEMICONDUCTOR DEVICES
#14SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#15THIN FILM TRANSISTOR
#16DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES
#17INTEGRATED CIRCUIT STRUCTURES WITH CAVITY SPACERS
#18SEMICONDUCTOR DEVICE
#19SILICON CARBIDE OXIDE HARD MASK FOR REDUCING DISHING EFFECTS
#20METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A DOPANT
#21Conformal deposition of silicon carbide films
#22Thin film transistor
#23METHOD AND STRUCTURE FOR AIR GAP INNER SPACER IN GATE-ALL-AROUND DEVICES
#24Semiconductor structure cutting process and structures formed thereby
#25STRUCTURE OF TWO-DIMENSIONAL MATERIAL-BASED DEVICE HAVING AIR-GAP AND METHOD FOR PREPARING SAME
#26METHOD FOR FORMING SEMICONDUCTOR DEVICE
#27SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
#28VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS
#29MOSFET DEVICE STRUCTURE WITH AIR-GAPS IN SPACER AND METHODS FOR FORMING THE SAME
#30Air gap spacer formation for nano-scale semiconductor devices
#31STRUCTURE OF FLASH MEMORY CELL
#32SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#33Contact architecture for capacitance reduction and satisfactory contact resistance
#34METHOD FOR FORMING SEMICONDUCTOR DEVICE
#35Semiconductor device and method for fabricating the same
#36GATE-ALL-AROUND DEVICES HAVING DIFFERENT SPACER THICKNESSES
#37SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
#38Inner spacer structures for gate-all-around field effect transistors
#39Semiconductor Device with Air-Spacer
#40SEMICONDUCTOR DEVICE
#41Structure and Method for Semiconductor Devices
#42FINFET STRUCTURE WITH AIRGAP AND METHOD OF FORMING THE SAME
#43Gate air spacer for fin-like field effect transistor
#44SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
#45SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#46Integrated circuit with doped low-k sidewall spacers for gate stacks
#47AIR GAP SPACER FOR METAL GATES
#48Semiconductor Devices And Methods Of Fabricating The Same
#49SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
#50Gate spacer structure and method of forming same
#51Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack
#52Nanosheet field-effect transistor device and method of forming
#53Semiconductor device including gas spacers and method of manufacture
#54SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#55Air spacer formation with a spin-on dielectric material
#56SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR SAME, AND ELECTRONIC DEVICE COMPRISING SAME
#57Semiconductor device having air gap between gate electrode and source/drain pattern
#58LOW-CAPACITANCE STRUCTURES AND PROCESSES
#59CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS USING HETEROGENEOUS PRECURSOR INTERACTION
#60Three-dimensional memory device with divided drain select gate lines and method for forming the same
#61Nano-Structure Transistors with Air Inner Spacers and Methods Forming Same
#62Semiconductor structure with an air gap and method of forming the same
#63INTEGRATED CIRCUIT STRUCTURE WITH SPACER SIZED FOR GATE CONTACT AND METHODS TO FORM SAME
#64Selective Gate Air Spacer Formation
#65Air gap in inner spacers and methods of fabricating the same in field-effect transistors
#66Selective High-K Formation in Gate-Last Process
#67Semiconductor device having air gap and method of fabricating thereof
#68Inner Spacer Features For Multi-Gate Transistors
#69SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE
#70Dual gate structures for semiconductor devices
#71Gate spacer structure and method of forming same
#72Transistor isolation structures
#73SRAM speed and margin optimization via spacer tuning
#74Methods for forming air spacers in semiconductor devices
#75TUNABLE LOW-K INNER AIR SPACERS OF SEMICONDUCTOR DEVICES
#76Method of manufacturing a FinFET by implanting a dielectric with a dopant
#77Gate air spacer for fin-like field effect transistor
#78SEMICONDUCTOR ARRANGEMENT WITH AIRGAP AND METHOD OF FORMING
#79SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#80Fin field effect transistor (FinFET) device structure and method for forming the same
#81Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#82Semiconductor structure cutting process and structures formed thereby
#83Method of forming memory device
#84RF switch device
#85Structure of flash memory cell and method for fabricating the same
#86Spacer Features For Nanosheet-Based Devices
#87Semiconductor devices with air gaps and the method thereof
#88Insulating cap on contact structure
#89Air spacers around contact plugs and method forming same
#90Semiconductor devices and methods of manufacturing thereof
#91Semiconductor device
#92Multi-gate device and related methods
#93MOSFET device structure with air-gaps in spacer and methods for forming the same
#94Air gap seal for interconnect air gap and method of fabricating thereof
#95Method for preparing semiconductor device with gate spacer
#96Semiconductor device with gate spacer and manufacturing method of the semiconductor device
#97Semiconductor devices with air gate spacer and air gate cap
#98INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
#99Semiconductor structure with air gaps for buried semiconductor gate and method for forming the same
#100Memory Arrays, and Methods of Forming Memory Arrays
#101Contact architecture for capacitance reduction and satisfactory contact resistance
#102Structure and method for semiconductor devices
#103Silicon carbide oxide hard mask for reducing dishing effects
#104Conformal deposition of silicon carbide films
#105Transistor isolation structures
#106High performance and low power semiconductor device
#107Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#108Method for manufacturing semiconductor memory having reduced interference between bit lines and word lines
#109FinFET structure with airgap and method of forming the same
#110Method of forming a semiconductor device with capped air-gap spacer
#111Semiconductor device having an air gap and method for fabricating the same
#112METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH POROUS DIELECTRIC STRUCTURE
#113Memory device and method of forming the same
#114Solid-state image-capturing element having floation diffusion and hollow regions
#115Dual gate structures for semiconductor devices
#116Semiconductor device having an air gap along a gate spacer
#117Methods for manufacturing semiconductor devices with tunable low-k inner air spacers
#118Method of forming semiconductor structure
#119Semiconductor devices with air gate spacer and air gate cap
#120Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#121Selective gate air spacer formation
#122Field effect transistor (FET) comprising inner spacers and voids between channels
#123Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#124Semiconductor device and manufacturing method thereof
#125MOSFET device structure with air-gaps in spacer and methods for forming the same
#126Non-volatile memory structure and manufacturing method thereof
#127Semiconductor device with air-spacer
#128SRAM speed and margin optimization via spacer tuning
#129Heterojunction bipolar transistors with one or more sealed airgap
#130Semiconductor structure and method for forming the same
#131FinFET structure with airgap and method of forming the same
#132Gate air spacer for fin-like field effect transistor
#133Semiconductor device with porous dielectric structure and method for fabricating the same
#134Air gap in inner spacers and methods of fabricating the same in field-effect transistors
#135Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#136Selective high-k formation in gate-last process
#137Semiconductor device and method for manufacturing same
#138Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack
#139Silicon carbide oxide hard mask for reducing dishing effects
#140Semiconductor device having a conductive contact in direct contact with an upper surface and a sidewall of a gate metal layer
#141Air spacers around contact plugs and method forming same
#142Semiconductor device and method of manufacture
#143Semiconductor structure and method of forming the same
#144Semiconductor device
#145Integrated circuit with doped low-k side wall spacers for gate spacers
#146Gate spacer structure and method of forming same
#147Semiconductor device
#148Air spacer structures
#149Gate spacer with air gap for semiconductor device structure and method for forming the same
#150Semiconductor device having a contact plug with an air gap spacer
#151Semiconductor device having an air gap and method for fabricating the same
#152Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#153Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#154Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#155Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies
#156Contact architecture for capacitance reduction and satisfactory contact resistance
#157Semiconductor structure cutting process and structures formed thereby
#158Buried word line of a dynamic random access memory and method for fabricating the same
#159Insulating cap on contact structure and method for forming the same
#160Methods of reducing parasitic capacitance in multi-gate field-effect transistors
#161DEVICES WITH AIR GAPPING BETWEEN STACKED TRANSISTORS AND PROCESS FOR PROVIDING SUCH
#162Air gap seal for interconnect air gap and method of fabricating thereof
#163Solid-state image-capturing element and having floating diffusion and hollow regions
#164Semiconductor arrangement with airgap and method of forming
#165THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND DISPLAY APPARATUS
#166Semiconductor device and method of manufacturing the same
#167Multi-gate device and related methods
#168Multi-gate device and related methods
#169Method for forming semiconductor device
#170Vertical transistors with top spacers
#171Method of forming semiconductor structure
#172Positioning air-gap spacers in a transistor for improved control of parasitic capacitance
#173Forming two portion spacer after metal gate and contact formation, and related IC structure
#174Air gap spacer for metal gates
#175Image-capturing device and image-capturing method
#176Method of forming air-gap spacers and gate contact over active region and the resulting device
#177MEMORY DEVICE
#178Semiconductor device
#179Formation of air gap spacers for reducing parasitic capacitance
#180Formation of air gap spacers for reducing parasitic capacitance
#181Formation of air gap spacers for reducing parasitic capacitance
#182Airgap spacers formed in conjunction with a late gate cut
#183Nanosheet transistor with dual inner airgap spacers
#184Gate spacer structure and method of forming same
#185Semiconductor device and method of manufacture
#186Semiconductor device with air-spacer
#187IC structure with air gap adjacent to gate structure and methods of forming same
#188Insulating cap on contact structure and method for forming the same
#189Full air-gap spacers for gate-all-around nanosheet field effect transistors
#190Full air-gap spacers for gate-all-around nanosheet field effect transistors
#191Semiconductor device and manufacturing method thereof
#192Semiconductor device and method
#193Memory arrays, and methods of forming memory arrays
#194Integrated circuit with doped low-k sidewall spacers for gate stacks
#195Transistor comprising an air gap positioned adjacent a gate electrode
#196Contact over active gate employing a stacked spacer
#197Contact over active gate employing a stacked spacer
#198Semiconductor structure and manufacturing method thereof
#199Contact architecture for capacitance reduction and satisfactory contact resistance
#200Semiconductor structure and manufacturing method thereof
#201Method of manufacturing a semiconductor device and a semiconductor device
#202FinFET devices and methods of forming the same
#203Semiconductor device and method of manufacturing the same
#204Semiconductor structure and manufacturing method thereof
#205Semiconductor device and method of manufacturing the same
#206Method of forming nanosheet transistor structures with reduced parasitic capacitance and improved junction sharpness
#207Semiconductor device
#208Selective high-K formation in gate-last process
#209Transistor with inner-gate spacer
#210Method for forming replacement air gap
#211SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SAME
#212Formation of air gap spacers for reducing parasitic capacitance
#213Vertical transistor with reduced parasitic capacitance
#214Sealed cavity structures with a planar surface
#215Image-capturing device and image-capturing method
#216Nanosheet transistor with dual inner airgap spacers
#217Semiconductor structure having air gap between gate electrode and distal end portion of active area and fabrication method thereof
#218Air gap spacer with wrap-around etch stop layer under gate spacer
#219Buried word line of a dynamic random access memory and method for fabricating the same
#220Semiconductor structure cutting process and structures formed thereby
#221Air gap spacer formation for nano-scale semiconductor devices
#222Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack
#223Conformal deposition of silicon carbide films
#224Microelectronic devices including two contacts
#225Air gap spacer with controlled air gap height
#226Semiconductor device and method
#227Sealed cavity structures with a planar surface
#228Field-effect transistors with airgaps
#229Air gap spacer with wrap-around etch stop layer under gate spacer
#230Memory arrays
#231Air-gap spacers for field-effect transistors
#232Semiconductor device and method for manufacturing same
#233Semiconductor device and method for fabricating the same
#234Full air-gap spacers for gate-all-around nanosheet field effect transistors
#235Middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stack
#236Buried word line of a dynamic random access memory and method for fabricating the same
#237Method of forming integrated circuit with low-k sidewall spacers for gate stacks
#238Selective high-K formation in gate-last process
#239Transistor with an airgap spacer adjacent to a transistor gate
#240Method of manufacturing a semiconductor device and a semiconductor device
#241Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed thereby
#242Method for manufacturing semiconductor structure
#243Semiconductor device with airgap spacer for transistor and related method
#244Semiconductor structures and fabrication methods thereof
#245Semiconductor device and method of manufacturing the same
#246Method of manufacturing a semiconductor device and a semiconductor device
#247Semiconductor memory having reduced interference between bit lines and word lines
#248Field effect transistor air-gap spacers with an etch-stop layer
#249Manufacturing method of semiconductor device
#250Semiconductor structure having air gap between gate electrode and distal end portion of active area
#251Transistor with dual-gate spacer
#252METHODS OF FORMING AN AIR GAP ADJACENT A GATE STRUCTURE OF A FINFET DEVICE AND THE RESULTING DEVICES
#253Air-gap top spacer and self-aligned metal gate for vertical fets
#254Method for fabricating semiconductor device
#255Transistor with inner-gate spacer
#256Semiconductor device having a triple insulating film surrounded void
#257Air gap spacer for metal gates
#258Method for manufacturing the semiconductor structure
#259Semiconductor device and method
#260Field effect transistor air-gap spacers with an etch-stop layer
#261Field-effect transistors with a T-shaped gate electrode
#262Air gap spacer formation for nano-scale semiconductor devices
#263Method for manufacturing a transistor and method for manufacturing a ring oscillator using the same
#264Air-gap gate sidewall spacer and method
#265Semiconductor device having a shallow trench isolation structure and methods of forming the same
#266FINFET with source/drain structure and method of fabrication thereof
#267Vertically integrated nanosheet fuse
#268Vertically integrated nanosheet fuse
#269Air-gap gate sidewall spacer and method
#270Transistor with airgap spacer
#271Semiconductor device and method
#272Semiconductor device with air-spacer
#273Self-aligned contact cap
#274Semiconductor device and fabricating method thereof
#275Semiconductor device and method for fabricating the same
#276Semiconductor device and forming method thereof
#277Transistor-based semiconductor device with air-gap spacers and gate contact over active area
#278Semiconductor device having a gap defined therein
#279Air gap and air spacer pinch off
#280Transistor with improved air spacer
#281Transistor with air spacer and self-aligned contact
#282Semiconductor device blocking leakage current and method of forming the same
#283Air gap and air spacer pinch off
#284Air gap and air spacer pinch off
#285Transistor with air spacer and self-aligned contact
#286Air gap and air spacer pinch off
#287Complimentary metal-oxide-semiconductor circuit having transistors with different threshold voltages and method of manufacturing the same
#288Etch stop for airgap protection
#289Air gap spacer formation for nano-scale semiconductor devices
#290Air gap spacer formation for nano-scale semiconductor devices
#291Semiconductor device and method
#292Semiconductor devices utilizing spacer structures
#293Semiconductor device and method
#294Methods of forming an air-gap spacer on a semiconductor device and the resulting device
#295Self-aligned contact cap
#296Self-aligned contact cap
#297High voltage semiconductor devices including main conductive pattern, auxiliary conductive pattern, and spacer therebetween
#298Device for improving performance through gate cut last process
#299Remote plasma based deposition of oxygen doped silicon carbide films
#300Air gap spacer for metal gates