ClassID:

208382

H01L29/66098 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices; Diodes Breakdown diodes

Recent Application in this class:
#1
20240321863
2024-09-26

LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR PROTECTION DEVICE

#2
20240063269
2024-02-22

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

#3
20230260986
2023-08-17

Low capacitance transient voltage suppressor with a mos-triggered silicon controlled rectifier as high-side steering diode

#4
20230230972
2023-07-20

TVS diode and assembly having asymmetric breakdown voltage

#5
20210225832
2021-07-22

TRANSIENT-VOLTAGE-SUPPRESSION DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

#6
20210175224
2021-06-10

TVS Diode and Assembly Having Asymmetric Breakdown Voltage

#7
20210013192
2021-01-14

Low capacitance transient voltage suppressor including a punch-through silicon controlled rectifier as low-side steering diode

#8
20200135714
2020-04-30

Low capacitance transient voltage suppressor including a punch-through silicon controlled rectifier as low-side steering diode

#9
20200027997
2020-01-23

Bidirectional Zener diode and method for manufacturing bidirectional Zener diode

#10
20190067493
2019-02-28

Charge carrier extraction inverse diode

#11
20140332841
2014-11-13

High voltage breakover diode having comparable forward breakover and reverse breakdown voltages

#12
20140225227
2014-08-14

Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrate

#13
20140124894
2014-05-08

Semiconductor device comprising a diode and a method for producing such a device

#14
20130224933
2013-08-29

Programmable poly fuse using a P-N junction breakdown

#15
20120228738
2012-09-13

Protecting element having first and second high concentration impurity regions separated by insulating region

#16
20120068223
2012-03-22

Bidirectional protection component

#17
20120061803
2012-03-15

Asymmetrical bidirectional protection component

#18
20120061792
2012-03-15

Bidirectional voltage-regulator diode

#19
20090061606
2009-03-05

Method for reducing dislocation threading using a suppression implant

#20
20080296727
2008-12-04

Programmable poly fuse

#21
20070281433
2007-12-06

Method for reducing dislocation threading using a suppression implant

#22
20050121730
2005-06-09

Protective device

#23
14563620
2016-06-14

Electrostatic discharge circuitry with separate power rails