208380 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Sub-classes:Metal-Oxide-Semiconductor Capacitors and Methods of Fabricating The Same
#2SEMICONDUCTOR DEVICE WITH PROGRAMMABLE INSULATING LAYER AND METHOD FOR FABRICATING THE SAME
#3SEMICONDUCTOR DEVICE WITH PROGRAMMABLE INSULATING LAYER AND METHOD FOR FABRICATING THE SAME
#4SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#5Semiconductor device and operation method thereof
#6Terahertz oscillator and producing method thereof
#7Ferroelectric tunnel junction devices with internal biases for long retention
#8Ferroelectric-assisted tunneling selector device
#9Ferroelectric-assisted tunneling selector device
#10Power semiconductor devices with low specific on-resistance
#11Semiconductor device and operation method thereof
#12Voltage-controllable capacitor comprising a ferroelectric layer and method for producing the voltage-controllable capacitor comprising a ferroelectric layer
#13Complementary metal-oxide-semiconductor (CMOS) voltage-controlled resistor
#14Schottky diode with buried layer in GaN materials
#15Semiconductor pressure sensor device and method of manufacturing the same
#16Semiconductor device having trench capacitor structure integrated therein
#17Method for producing silicon nanowire devices
#18Schottky diode with buried layer in GaN materials
#19Method and system for floating guard rings in gallium nitride materials
#20Fabrication method of two-terminal semiconductor component using trench technology
#21Method for manufacturing a semiconductor substrate including laser annealing
#22Nanotip capacitor
#23Punch-through diode and method of processing the same