208390 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices Capacitors with PN or Schottky junction, e.g. varactors
VARACTORS HAVING INCREASED TUNING RATIO
#2SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
#3REDUCED SURFACE FIELD LAYER IN VARACTOR
#4Layout pattern of semiconductor varactor and forming method thereof
#5MULTI-LAYER CERAMIC CAPACITOR AND METHOD FOR PRODUCING THE SAME
#6LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS
#7METHOD OF FORMING SEMICONDUCTOR STRUCTURE
#8STRUCTURES FOR A VERTICAL VARACTOR DIODE AND RELATED METHODS
#9Apparatus Including a Capacitor and a Coil, and a System Having Such an Apparatus
#10Capacitor structure and manufacturing method thereof
#11SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
#12SEMICONDUCTOR DEVICE
#13Gate-all-around integrated circuit structures including varactors
#14Varactor with meander diffusion region
#15Method for producing a diode
#16Method for producing a diode
#17Semiconductor device and method of forming the same
#18PASSIVE TUNABLE INTEGRATED CIRCUIT WITH ELECTRO-STATIC DISCHARGE PROTECTION
#19Gate-all-around integrated circuit structures including varactors
#20Method for forming an IC including a varactor with reduced surface field region
#21Varactor structure with relay conductive layers
#22Integration of vertical GaN varactor with HEMT
#23Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices
#24Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices
#25Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods
#26Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice
#27Method for producing a diode
#28Method for producing a diode
#29Vertical pin-type capacitor and image sensing device including the same
#30Method of making a semiconductor device
#31Semiconductor device and method of forming the same
#32Reduced surface field layer in varactor
#33FinFET varactor quality factor improvement
#34Well doping for metal oxide semiconductor (MOS) varactor
#35Variable capacitor
#36Structure for improved noise signal isolation
#37Method and apparatus of forming high voltage varactor and vertical transistor on a substrate
#38Method and apparatus of forming high voltage varactor and vertical transistor on a substrate
#39Protection device and method for fabricating the protection device
#40HIGH QUALITY FACTOR FIN METAL OXIDE SEMICONDUCTOR VARACTOR WITH IMPROVED NUMBER OF FINS
#41MOS-varactor design to improve tuning efficiency
#42Dual-series varactor EPI
#43Self-aligned contact (SAC) on gate for improving metal oxide semiconductor (MOS) varactor quality factor
#44Protection device and method for fabricating the protection device
#45Semiconductor variable capacitor using threshold implant region
#46Method of manufacturing a FinFET varactor
#47Metal-semiconductor-metal two-dimensional electron gas varactor and method of manufacturing the same
#48Transcap manufacturing techniques without a silicide-blocking mask
#49CMOS and bipolar device integration including a tunable capacitor
#50Layout techniques for transcap area optimization
#51Semiconductor device and method of forming the same
#52Semiconductor structure including a varactor and method for the formation thereof
#53Dual stack varactor
#54Semiconductor device and method of manufacturing semiconductor device
#55MOS varactors and methods for fabricating MOS varactors
#56Variable capacitor based on buried oxide process
#57Method of manufacturing semiconductor device, and probe card
#58FinFET varactor
#59MOS-varactor design to improve tuning efficiency
#60Pyroelectric device
#61Integrated structures of acoustic wave device and varactor, and acoustic wave device, varactor and power amplifier, and fabrication methods thereof
#62Semiconductor device including finFET and fin varactor
#63Semiconductor structure including a varactor
#64Backside coupled symmetric varactor structure
#65MOS varactors and semiconductor integrated devices including the same
#66Compound varactor
#67Dual-series varactor EPI
#68Method of manufacturing semiconductor device, and probe card
#69Nano structured paraelectric or superparaelectric varactors for agile electronic systems
#70Compound varactor
#71Varactor diode with heterostructure
#72Semiconductor heterobarrier electron device and method of making
#73DUAL STACK VARACTOR
#74FinFET with embedded MOS varactor and method of making same
#75Varactor structure
#76Metal-semiconductor wafer bonding for high-Q devices
#77Variable capacitance devices
#78Digital semiconductor variable capacitor
#79Group III nitride semiconductor frequency multiplier
#80Trench isolation MOS P-N junction diode device and method for manufacturing the same
#81MOS varactor optimized layout and methods
#82Integrated circuit based varactor
#83Trench isolation MOS P-N junction diode device and method for manufacturing the same
#84Semiconductor heterobarrier electron device and method of making
#85MOS varactor optimized layout and methods
#86Variable capacitance device
#87Metal-semiconductor wafer bonding for high-Q devices
#88MOS varactor structure and methods
#89PN-junction varactor in a BiCMOS process and manufacturing method of the same
#90Trench isolation MOS P-N junction diode device and method for manufacturing the same
#91Varactor diodes
#92Fabrication method of two-terminal semiconductor component using trench technology
#93Lateral junction varactor with large tuning range
#94MOS varactor and fabricating method of the same
#95Hyperabrupt Diode Structure And Method For Making Same
#96Counter-doped varactor structure and method
#97Methods for forming varactor diodes
#98Varactor diode with doped voltage blocking layer
#99Differential varactor
#100High performance tapered varactor
#101Lateral junction varactor with large tuning range
#102SEMICONDUCTOR DEVICE
#103Differential junction varactor
#104High performance tapered varactor
#105Integrated switch device
#106Method of forming a varactor
#107Method of making wide tuning range and super low capacitance varactor diodes
#108Method for making a varactor with hyper-abrupt junction region including a superlattice
#109Semiconductor devices including hyper-abrupt junction region including a superlattice
#110Varactor with hyper-abrupt junction region including spaced-apart superlattices
#111Integration of vertical GaN varactor with HEMT
#112Lateral devices in silicon-on-insulator (SOI) technology
#113Variable capacitor structures with reduced channel resistance
#114Transcap manufacturing techniques without a silicide-blocking mask
#115MOS capacitive structure of reduced capacitance variability
#116Backside coupled symmetric varactor structure
#117Varactor with integrated micro-discharge source