208402 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
SWITCH LNA MODULE
#2GAN POWER DEVICE AND MANUFACTURING METHOD THEREOF
#3LATERAL BIPOLAR TRANSISTOR
#4METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES
#5Semiconductor structures and manufacturing methods thereof
#6Semiconductor device and a manufacturing method of semiconductor device
#7Semiconductor device
#8Semiconductor device
#9Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface
#10Single column compound semiconductor bipolar junction transistor fabricated on III-V compound semiconductor surface
#11Semiconductor device and method for manufacturing same
#12Semiconductor device having a collector layer including first-conductivity-type semiconductor layers
#13Logic gate cell structure
#14Semiconductor device
#15Trench-gate type semiconductor device and manufacturing method therefor
#16Semiconductor device
#17Trenched and implanted bipolar junction transistor
#18Vertical semiconductor device and manufacturing method thereof
#19Semiconductor device
#20Semiconductor device
#21Method of fabricating a GaN P-i-N diode using implantation
#22III-V, Ge, or SiGe fin base lateral bipolar transistor structure and method
#23METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#24Edge termination by ion implantation in gallium nitride
#25Insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrate
#26Method of fabricating a gallium nitride P-i-N diode using implantation
#27Methods for fabricating a bipolar junction transistor with self-aligned terminals
#28Method and system for fabricating floating guard rings in GaN materials
#29Compound semiconductor lateral PNP bipolar transistors
#30Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor
#31Vertical semiconductor device having a non-conductive substrate and a gallium nitride layer
#32Method of fabricating a GaN P-i-N diode using implantation
#33Edge termination by ion implantation in GaN
#34Method and system for fabricating floating guard rings in GaN materials
#35Vertical junction field effect transistors and bipolar junction transistors
#36Bipolar junction transistor guard ring structures and method of fabricating thereof
#37NANOSTRUCTURE ARRAY TRANSISTOR
#38Semiconductor device
#39Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation
#40Bipolar junction transistor guard ring structures and method of fabricating thereof
#41MESA-TYPE BIPOLAR TRANSISTOR
#42Method of manufacturing a semiconductor device and a semiconductor device obtained by means of said method