H01L29/66227 - CPC Classification Index

ClassID:

208395 ⎘

H01L29/66227 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices

Sub-classes:

H01L29/66234 » {Bipolar junction transistors [BJT]} 182
H01L29/66356 » {Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]} 263
H01L29/66363 » {Thyristors} 117
H01L29/66409 » {Unipolar field-effect transistors} 38
H01L29/66931 » {BJT-like unipolar transistors, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistor [RTT], bulk barrier transistor [BBT], planar doped barrier transistor [PDBT], charge injection transistor [CHINT]} 24
H01L29/66946 » {Charge transfer devices} 8

Recent Application in this class:

20200219901

Thin film transistor and manufacturing method thereof, array substrate and display panel

20200035488

Lateral semiconductor nanotube with hexagonal shape

20190375632

Nanoparticle structure and process for manufacture

20190245068

Method for making thin film transistor with nanowires as masks

20190198319

Lateral semiconductor nanotube with hexagonal shape

20190097065

Thin film transistor and manufacturing method thereof

20190074302

Thin film transistor and manufacturing method thereof, array substrate and display panel

20180374753

Stacked elongated nanoshapes of different semiconductor materials and structures that incorporate the nanoshapes

20180342578

Semiconductor device

20180200786

Nanoparticle structure and process for manufacture

20180097095

Quantum box device comprising dopants located in a thin semiconductor layer

20170162647

Substrate resistor with overlying gate structure

20170158501

Magnetic nanomechanical devices for stiction compensation

20150056786

Fabrication method of silicon carbide semiconductor apparatus and silicon carbide semiconductor apparatus fabricated thereby

20150001554

Silicon carbide semiconductor device

20140015009

Tunnel transistor with high current by bipolar amplification

20130161736

Trench MOS transistor having a trench doped region formed deeper than the trench gate

20120298963

STRUCTURE FOR USE IN FABRICATION OF PIN HETEROJUNCTION TFET

20110169051

Structure for use in fabrication of PiN heterojunction TFET