208406 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Thyristors structurally associated with another device, e.g. built-in diode
VERTICALLY STACKED DIODE-TRIGGER SILICON CONTROLLED RECTIFIER
#2THYRISTOR MEMORY CELL, THYRISTOR MEMORY ARRAY, AND METHOD FOR FABRICATING A THYRISTOR MEMORY ARRAY
#3Vertically stacked diode-trigger silicon controlled rectifier
#4Protection devices with trigger devices and methods of formation thereof
#5Reverse Conducting Power Semiconductor Device and Method for Manufacturing the Same
#6Segmented power diode structure with improved reverse recovery
#7Silicon controlled rectifier and method for making the same
#8Power semiconductor device with a temperature sensor
#9Semiconductor device of electrostatic discharge protection
#10Semiconductor device of electrostatic discharge protection
#11Protection devices with trigger devices and methods of formation thereof
#12High density vertical thyristor memory cell array with improved isolation
#13Silicon controlled rectifiers integrated into a heterojunction bipolar transistor process
#14Vertical fin-type devices and methods
#15Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
#16High density vertical thyristor memory cell array with improved isolation
#17Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors
#18TVS structures for high surge and low capacitance
#19Electrostatic discharge protection with integrated diode
#20Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)
#21Method for manufacturing vertically integrated semiconductor device
#22ESD protection device with improved bipolar gain using cutout in the body well
#23ESD protection structure
#24Protection devices with trigger devices and methods of formation thereof
#25ESD protection structure and method of fabrication thereof
#26Electrostatic discharge protection device structures and methods of manufacture
#27Insulated gate power device using a MOSFET for turning off
#28ESD protection device with improved bipolar gain using cutout in the body well
#29Vertically integrated semiconductor device and manufacturing method
#30ESD protection device
#31Bi-directional silicon controlled rectifier structure
#32Bulk FinFET ESD devices
#33Power device integration on a common substrate
#34Bi-directional silicon controlled rectifier structure
#35ESD protection device with improved bipolar gain using cutout in the body well
#36Monolithically integrated light-actived thyristor and method
#37Method of switching off a monolithically integrated optically controlled thyristor
#38Monolithically integrated light-activated thyristor and method
#39Monolithically integrated light-activated thyristor and method
#40Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors
#41Solid-state spark chamber for detection of radiation
#42Silicon controlled rectifier with integral deep trench capacitor