ClassID:

208408

H01L29/66393 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Thyristors Lateral or planar thyristors

Recent Application in this class:
#1
20220246749
2022-08-04

Electrostatic discharge protection devices and methods for fabricating electrostatic discharge protection devices

#2
20220231151
2022-07-21

Electrostatic discharge protection devices and methods for fabricating electrostatic discharge protection devices

#3
20220181474
2022-06-09

Silicon controlled rectifier with a gate electrode for electrostatic discharge protection

#4
20220077139
2022-03-10

Electrostatic discharge protection device

#5
20210335997
2021-10-28

Silicon controlled rectifier and method for making the same

#6
20210280573
2021-09-09

Semiconductor device and method for manufacturing same

#7
20210233912
2021-07-29

Multi-layer thyristor random access memory with silicon-germanium bases

#8
20210217753
2021-07-15

Multi-layer horizontal thyristor random access memory and peripheral circuitry

#9
20200328214
2020-10-15

Multi-layer thyristor random access memory with silicon-germanium bases

#10
20200194432
2020-06-18

Multi-layer horizontal thyristor random access memory and peripheral circuitry

#11
20200135715
2020-04-30

Silicon-controlled rectifiers with wells laterally isolated by trench isolation regions

#12
20200058637
2020-02-20

SILICON-CONTROLLED RECTIFIER STRUCTURE AND MANUFACTURING METHOD THEREFOR

#13
20190326295
2019-10-24

Multi-layer horizontal thyristor random access memory and peripheral circuitry

#14
20190326294
2019-10-24

Multi-layer thyristor random access memory with silicon-germanium bases

#15
20190237568
2019-08-01

Silicon controlled rectifiers integrated into a heterojunction bipolar transistor process

#16
20180248025
2018-08-30

FinFET SCR with SCR implant under anode and cathode junctions

#17
20180204913
2018-07-19

Flat gate commutated thyristor

#18
20170373053
2017-12-28

ESD protection structure

#19
20170170167
2017-06-15

Electrostatic discharge protection device capable of adjusting holding voltage

#20
20160276332
2016-09-22

ESD protection structure and method of fabrication thereof

#21
20160111414
2016-04-21

SCR with fin body regions for ESD protection

#22
20150187749
2015-07-02

Silicon-controlled rectifier electrostatic discharge protection device and method for forming the same

#23
20150060939
2015-03-05

SCR with fin body regions for ESD protection

#24
20150048416
2015-02-19

Silicon controlled rectifiers (SCR), methods of manufacture and design structures

#25
20140175509
2014-06-26

Lattice mismatched hetero-epitaxial film

#26
20140167203
2014-06-19

Electrostatic discharge resistant diodes

#27
20140167202
2014-06-19

Electrostatic discharge resistant diodes

#28
20140042587
2014-02-13

Semiconductor-on-insulator device with asymmetric structure

#29
20130313607
2013-11-28

Silicon controlled rectifier with stress-enhanced adjustable trigger voltage

#30
20120326766
2012-12-27

Silicon controlled rectifier with stress-enhanced adjustable trigger voltage

#31
20120319164
2012-12-20

Semiconductor device

#32
20120252172
2012-10-04

Method for producing a thyristor

#33
20120193711
2012-08-02

Semiconductor device and method of manufacturing the same

#34
20120187525
2012-07-26

Semiconductor-on-insulator device with asymmetric structure

#35
20120178222
2012-07-12

Silicon controlled rectifiers (SCR), methods of manufacture and design structures

#36
20120074458
2012-03-29

Quasi-vertical gated NPN-PNP ESD protection device

#37
20110180870
2011-07-28

High voltage SCRMOS in BiCMOS process technologies

#38
20100200922
2010-08-12

Electrostatic discharge protection device comprising a plurality of highly doped areas within a well

#39
20100062573
2010-03-11

Method for producing a thyristor

#40
20090166721
2009-07-02

Quasi-vertical gated NPN-PNP ESD protection device

#41
20090065802
2009-03-12

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

#42
20080067587
2008-03-20

Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor

#43
20060214185
2006-09-28

Horizontal tram

#44
20050239259
2005-10-27

High voltage power device with low diffusion pipe resistance

#45
20050167664
2005-08-04

Thyristor-based SRAM

#46
20050148118
2005-07-07

Horizontal TRAM and method for the fabrication thereof

#47
20050098794
2005-05-12

Thyristor-based SRAM

#48
20050026343
2005-02-03

Method using quasi-planar double gated fin field effect transistor process for the fabrication of a thyristor-based static read/write random-access memory

#49
20050026337
2005-02-03

Thyristor-based SRAM and method for the fabrication thereof

#50
14537424
2015-07-28

Silicon controlled rectifier for providing electrostatic discharge protection for high voltage integrated circuits