208409 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Thyristors with an active layer made of a group 13/15 material
SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
#2Light-emitting thyristor, light-emitting element chip, optical print head, and image forming apparatus
#3Light-emitting component, light-emitting device, and image forming apparatus
#4Light-emitting component having light-absorbing layer, light-emitting device, and image forming apparatus
#5Layered structure including thyristor and light-emitting element, light-emitting component, light-emitting device, and image forming apparatus
#6Light-emitting component, light-emitting device, and image forming apparatus
#7Split-electrode vertical cavity optical device
#8Dual wavelength hybrid device
#9Optoelectronic integrated circuit
#10Solid-state spark chamber for detection of radiation