208418 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices BJT-like unipolar transistors, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistor [RTT], bulk barrier transistor [BBT], planar doped barrier transistor [PDBT], charge injection transistor [CHINT]
Sub-classes:A NOVEL TRANSISTOR DEVICE
#2TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HIGH GERMANIUM CONTENT PORTION
#3Digital circuits comprising quantum wire resonant tunneling transistors
#4Column IV transistors for PMOS integration
#5Amorphous metal hot electron transistor
#6Transistors with high concentration of germanium
#7Selective germanium P-contact metalization through trench
#8Amorphous metal hot electron transistor
#9Selective germanium P-contact metalization through trench
#10Transistor devices having source/drain structure configured with high germanium content portion
#11Selective germanium p-contact metalization through trench
#12TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM
#13Method of making a graphene base transistor with reduced collector area
#14Method of making a graphene base transistor with reduced collector area
#15Method of fabricating a lateral insulated gate bipolar transistor
#16Hot-electron transistor having multiple MSM sequences
#17Graphene base transistor with reduced collector area
#18Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltage
#19Transistors with high concentration of boron doped germanium
#20Gated resonant tunneling diode
#21Incorporating gate control over a resonant tunneling structure in CMOS to reduce off-state current leakage, supply voltage and power consumption
#22Gated resonant tunneling diode
#23Electronic component manufacturing method
#24Semiconductor capacitors in hot (hybrid orientation technology) substrates