208451 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
SEMICONDUCTOR DEVICE
#2Ruggedized symmetrically bidirectional bipolar power transistor
#3Etch stop layer for injecting carriers into drift layer for a vertical power device
#4Electrostatic protection element
#5ESD protection circuit with isolated SCR for negative voltage operation
#6Short-circuit semiconductor component and method for operating same
#7Ruggedized symmetrically bidirectional bipolar power transistor
#8Short-circuit semiconductor component and method for operating it
#9Insulated gate turn-off device with designated breakdown areas between gate trenches
#10High surge transient voltage suppressor
#11Silicon-controlled rectifier structure and manufacturing method thereof
#12Unidirectional ESD protection with buried breakdown thyristor device
#13Power electronic arrangement
#14High surge transient voltage suppressor
#15ESD protection circuit with isolated SCR for negative voltage operation
#16ESD protection circuit with isolated SCR for negative voltage operation
#17High surge transient voltage suppressor
#18FinFET SCR with SCR implant under anode and cathode junctions
#19Transient voltage suppression devices with symmetric breakdown characteristics
#20Ruggedized symmetrically bidirectional bipolar power transistor
#21Electrostatic discharge protection structure, method for manufacturing an electrostatic discharge protection structure, and vertical thyristor structure
#22Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type
#23Method and system for a semiconductor device with integrated transient voltage suppression
#24Bi-directional punch-through semiconductor device and manufacturing method thereof
#25Transient voltage suppressor (TVS) with reduced breakdown voltage
#26Bidirectional MOS device and method for preparing the same
#27Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same
#28Bi-directional punch-through semiconductor device and manufacturing method thereof
#29ESD protection structure and method of fabrication thereof
#30Vertical power component
#31SEMICONDUCTOR DEVICE WITH VOLTAGE-SUSTAINING REGION CONSTRUCTED BY SEMICONDUCTOR AND INSULATOR CONTAINING CONDUCTIVE REGIONS
#32ESD protection circuit with isolated SCR for negative voltage operation
#33Robust ESD protection with silicon-controlled rectifier
#34Method and system for a semiconductor device with integrated transient voltage suppression
#35Protection device and related fabrication methods
#36Protection device and related fabrication methods
#37SILICON-CONTROLLED-RECTIFIER WITH ADJUSTABLE HOLDING VOLTAGE
#38Vertical power component
#39ESD protection circuit with isolated SCR for negative voltage operation
#40Bipolar junction transistor with improved avalanche capability
#41Bidirectional semiconductor device for protection against electrostatic discharges, usable on silicon on insulator
#42Thyristor which can be triggered electrically and by radiation
#43Thyristor with integrated resistance and method for producing it
#44Transient voltage suppressor (TVS) with reduced breakdown voltage