208453 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Thyristor-type devices, e.g. having four-zone regenerative action Asymmetrical thyristors
GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING THICKNESS
#2GATED PROTECTION DEVICE STRUCTURES FOR AN ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
#3Electrostatic discharge protection devices and methods for fabricating electrostatic discharge protection devices
#4Silicon controlled rectifier with a gate electrode for electrostatic discharge protection
#5Light emitting element array having a plurality of light emitting thyristors in island structures, exposing head using the same, and image forming apparatus using the same
#6Thyristor with improved plasma spreading
#7Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise
#8Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise
#9Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
#10Semiconductor component with improved robustness
#11Semiconductor device and method of forming a semiconductor device
#12Semiconductor device and method of forming a semiconductor device