208454 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Thyristor-type devices, e.g. having four-zone regenerative action Lateral thyristors
Horizontal TRAM and method for the fabrication thereof
#302Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof
#303Electro-static discharge protection circuit for dual-polarity input/output pad
#304Sealing gasket with flexible stopper
#305Symmetrical high frequency SCR structure