208471 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
Formation of carbon-containing material
#302Thin-Film Transistor, Carbon-Based Layer and Method of Producing Thereof
#303Field effect transistor and method of manufacturing the same
#304Graphene device and method of fabricating a graphene device
#305Fabrication technique for gallium nitride substrates
#306Printable semiconductor structures and related methods of making and assembling
#307Devices with graphene layers
#308Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials
#309Semiconductor device
#310N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
#311Apparatus and methods for improving parallel conduction in a quantum well device
#312Switching device and nonvolatile memory device
#313Memory device with reduced programming voltage method of reduction of programming voltage and method of reading such memory device
#314Graphene-based transistor
#315Semiconductor heterojunction devices based on SiC
#316FLASH MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
#317Bi-layer pseudo-spin field-effect transistor
#318Semiconductor device using graphene and method of manufacturing the same
#319Stretchable form of single crystal silicon for high performance electronics on rubber substrates
#320Sidewall graphene devices for 3-D electronics
#321Device and process of forming device with pre-patterned trench and graphene-based device structure formed therein
#322Method of making devices including graphene layers epitaxially grown on single crystal substrates
#323III-nitride semiconductor field effect transistor
#324Magnetic memory device and method for reading magnetic memory cell using spin hall effect
#325Semiconductor devices, methods of manufacture thereof and articles comprising the same
#326All around gate type semiconductor device and method of manufacturing the same
#327Methods of forming structures having nanotubes extending between opposing electrodes and structures including same
#328Beam ablation lithography
#329Semiconducting device having graphene channel
#330Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure
#331Microwave semiconductor device using compound semiconductor and method for manufacturing the same
#332Bottom-up assembly of structures on a substrate
#333Method and apparatus for producing graphene oxide layers on an insulating substrate
#334Suspended structures
#335Method for fabricating graphene transistors on a silicon or SOI substrate
#336Monolithically-Integrated Graphene-Nano-Ribbon (GNR) Devices, Interconnects and Circuits
#337Devices with graphene layers
#338SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#339FORMING THIN FILM TRANSISTORS USING ABLATIVE FILMS
#340Work function engineering for FN erase of a memory device with multiple charge storage elements in an undercut region
#341Insulated gate e-mode transistors
#342LDMOS with channel stress
#343Locally gated graphene nanostructures and methods of making and using
#344Electronic device and method for producing electronic device
#345Method of forming nano dots, method of fabricating the memory device including the same, charge trap layer including the nano dots and memory device including the same
#346Enhancement mode gallium nitride power devices
#347GALLIUM NITRIDE DIODES AND INTEGRATED COMPONENTS
#348III-nitride bidirectional switches
#349Method of forming a carbon-containing material
#350Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same
#351Graphene-based transistor
#352Semiconductor device
#353Field effect transistor, logic circuit including the same and methods of manufacturing the same
#354Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
#355III-nitride power semiconductor device
#356Saddle type flash memory device and fabrication method thereof
#357Field effect transistor including two group III-V compound semiconductor layers
#358Nitride semiconductor device
#359HETROJUNCTION BIPOLAR TRANSISTOR (HBT) WITH PERIODIC MULTILAYER BASE
#360Incorporation of functionalizing molecules in nanopatterned epitaxial graphene electronics
#361Nanoscale wires and related devices
#362Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
#363Trench type MOSgated device with strained layer on trench sidewall
#364GaN SEMICONDUCTOR DEVICE AND PROCESS EMPLOYING GaN ON THIN SAPHIRE LAYER ON POLYCRYSTALLINE SILICON CARBIDE
#365Devices including graphene layers epitaxially grown on single crystal substrates
#366Nitrogen polar III-nitride heterojunction JFET
#367Low leakage heterojunction vertical transistors and high performance devices thereof
#368Nanotube- and nanocrystal-based non-volatile memory
#369Printable semiconductor structures and related methods of making and assembling
#370Nanotube- and nanocrystal-based non-volatile memory
#371III-nitride enhancement mode devices
#372Stretchable form of single crystal silicon for high performance electronics on rubber substrates
#373Field-effect transistor
#374Field effect transistor including a group III-V compound semiconductor layer
#375Semiconductor device having GaN-based semiconductor layer
#376Vertical field effect transistor using linear structure as a channel region and method for fabricating the same
#377Patterned thin film graphite devices and method for making same
#378Semiconductor device having Schottky junction electrode
#379Trench type mosgated device with strained layer on trench sidewall
#380Semiconductor device for RF integrated circuit
#381High mobility group-III nitride transistors with strained channels
#382Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
#383Semiconductor device with multiple carrier channels