208471 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME
#2FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR THE FRINGE CAPACITOR
#3Epitaxies of a Chemical Compound Semiconductor
#4SEMICONDUCTOR DEVICE
#5INTEGRATION OF BORON ARSENIDE INTO POWER DEVICES AND SEMICONDUCTORS FOR THERMAL MANAGEMENT
#6RF Power Transistor Having Off-Axis Layout
#7Semiconductor structure and method for forming the same
#8Diamond semiconductor system and method
#9HIGH ELECTRON MOBILITY TRANSISTOR DEVICES HAVING A SILICIDED POLYSILICON LAYER
#10High electron mobility transistor devices having a silicided polysilicon layer
#11FIELD EFFECT TRANSISTOR DEVICE
#12Semiconductor device and display device including the same
#13SEALED CAVITY EMBEDDED IN A SEMICONDUCTOR WAFER
#14Field effect transistor device, and method for improving short-channel effect and output characteristic thereof
#15Semiconductor device for RF integrated circuit
#16CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLADDING LAYER ON THE NMOS CHANNEL
#17High electron mobility transistor devices having a silicided polysilicon layer
#18Semiconductor structure, HEMT structure and method of forming the same
#19Semiconductor structure and method for forming the same
#20Epitaxies of a chemical compound semiconductor
#21Two dimension material fin sidewall
#22Semiconductor device and display device including the same
#23Group III nitride-based transistor device
#24RARE-EARTH III-NITRIDE N-POLAR HEMT
#25Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitor
#26Threshold adjustment for quantum dot array devices with metal source and drain
#27QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS
#28Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer
#29Diamond semiconductor system and method
#30Quantum dot devices with trenched substrates
#31High electron mobility transistor and fabrication method thereof
#32High electron mobility transistor and fabrication method thereof
#33Semiconductor device and method for manufacturing the semiconductor device
#34Semiconductor device
#35Semiconductor structure, HEMT structure and method of forming the same
#36High electron mobility transistor and fabrication method thereof
#37Epitaxial structure of Ga-face group III nitride, active device, and gate protection device thereof
#38Semiconductor device and manufacturing method thereof
#39Epitaxies of a chemical compound semiconductor
#40Integrated enhancement/depletion mode HEMT
#41Charge-induced threshold voltage tuning in III-N transistors
#42Semiconductor device and display device including the same
#43Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor device
#44Semiconductor device and method for manufacturing the semiconductor device
#45Diamond semiconductor system and method
#46Digital alloy based back barrier for P-channel nitride transistors
#47Semiconductor device and manufacturing method of the same
#48Two dimension material fin sidewall
#49Semiconductor devices with a protection layer and methods of fabrication
#50Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#51Stretchable form of single crystal silicon for high performance electronics on rubber substrates
#52High frequency amplifier
#53Quantum dot device packages
#54Transistor device with heterogeneous channel structure bodies and method of providing same
#55Gallium nitride transistor
#56Laterally adjacent and diverse group III-N transistors
#57Semiconductor device and display device including the same
#58Method for manufacturing nitrogen-face polarity gallium nitride epitaxial structure
#59Method for manufacturing an integrated enhancement/depletion mode HEMT
#60Independent double-gate quantum dot qubits
#61Quantum dot devices with trenched substrates
#62Semiconductor structure, HEMT structure and method of forming the same
#63Method for fabricating drive circuit and organic light-emitting diode display each having switching transistor without etch stopping layer on oxide semiconductor
#64Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrate
#65Quantum dot devices with single electron transistor detectors
#66III-V field effect transistor and semiconductor structure
#67Semiconductor device and method for manufacturing the semiconductor device
#68Surface acoustic wave RFID sensor for chemical detection and (bio)molecular diagnostics
#69Transistors incorporating metal quantum dots into doped source and drain regions
#70Gate patterning for quantum dot devices
#71Quantum dot devices
#72Quantum dot devices with patterned gates
#73Ultra-thin-body GaN on insulator device
#74Digital alloy based back barrier for P-channel nitride transistors
#75Semiconductor device and manufacturing method of the same
#76Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer
#77Process of forming epitaxial substrate having N-polar gallium nitride
#78Epitaxies of a chemical compound semiconductor
#79Thin film transistor substrate, and display panel and display device including same
#80Semiconductor devices with core-shell structures
#81Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#82Oxide heterostructures having spatially separated electron-hole bilayers
#83Threshold adjustment for quantum dot array devices with metal source and drain
#84Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same
#85Techniques for co-integrating transition metal dichalcogenide (TMDC)-based and III-N semiconductor-based transistor devices
#86Semiconductor device
#87III-V heterojunction field effect transistor
#88Semiconductor device and display device including the same
#89Semiconductor device and method for manufacturing the same
#90Diamond based current aperture vertical transistor and methods of making and using the same
#91SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
#92Semiconductor devices and FinFETs
#93SiC structure, semiconductor device having SiC structure, and process of forming the same
#94Semiconductor structure, HEMT structure and method of forming the same
#95Low external resistance channels in III-V semiconductor devices
#96Apparatus comprising a sensor arrangement and associated fabrication methods
#97Method of producing an electronic device with a graphene device and semiconductor device formed on a common semiconductor substrate
#98Carrier confinement for high mobility channel devices
#99Semiconductor devices with germanium-rich active layers and doped transition layers
#100Transistors incorporating metal quantum dots into doped source and drain regions
#101Semiconductor device and display device including the same
#102Semiconductor device and manufacturing method of the same
#103Microelectronic sensor for biometric authentication
#104Multi-gate high electron mobility transistors and methods of fabrication
#105Method of making a high power transistor with gate oxide barriers
#106Transistor and semiconductor device
#107Semiconductor device having germanium active layer with underlying diffusion barrier layer
#108Semiconductor device and method for manufacturing the semiconductor device
#109Method for manufacturing semiconductor device
#110Two-dimensional material-based field-effect transistor sensors
#111High electron mobility transistor fabrication process on reverse polarized substrate by layer transfer
#112Semiconductor devices with germanium-rich active layers and doped transition layers
#113Semiconductor devices with field plates
#114Ta based ohmic contact
#115GALLIUM NITRIDE POWER DEVICES
#116Transistors, methods of forming transistors and display devices having transistors
#117Semiconductor structure with template for transition metal dichalcogenides channel material growth
#118Semiconductor devices and methods of manufacturing the same
#119CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel
#120Buffer stack for group IIIA-N devices
#121Semiconductor devices with graphene nanoribbons
#122Method for growing epitaxies of a chemical compound semiconductor
#123Transistors incorporating metal quantum dots into doped source and drain regions
#124Semiconductor devices and FinFETS
#125High power transistor with oxide gate barriers
#126Threshold adjustment for quantum dot array devices with metal source and drain
#127Strained stacked nanosheet FETs and/or quantum well stacked nanosheet
#128Memory devices, methods of manufacturing the same, and methods of accessing the same
#129Low external resistance channels in III-V semiconductor devices
#130Semiconductor devices with germanium-rich active layers and doped transition layers
#131Method of manufacturing a monolayer graphene photodetector and monolayer graphene photodetector
#132Manufacturing method of graphene modulated high-K oxide and metal gate MOS device
#133Graphene-metal bonding structure, method of manufacturing the same, and semiconductor device having the graphene-metal bonding structure
#134Method for manufacturing graphene transistor based on self-aligning technology
#135Field effect transistor
#136Semiconductor device and method of manufacturing the semiconductor device
#137Methods of fabricating pillared graphene nanostructures
#138Switching device
#139Graphene device and method of fabricating a graphene device
#140N-polar III-nitride transistors
#141Spintronic device
#142Semiconductor device and manufacturing method of the same
#143Semiconductor devices with core-shell structures
#144Method for growing epitaxies of a chemical compound semiconductor
#145Methods of forming III-V semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods
#146Methods of forming semiconductor devices and FinFETs
#147Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
#148Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel
#149Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge
#150Method of making split-gate memory cell with substrate stressor region
#151Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer
#152Semiconductor devices with field plates
#153Methods of forming a nanowire transistor device
#154Integrated circuit devices including strained channel regions and methods of forming the same
#155Semiconductor devices with graphene nanoribbons
#156Semiconductor device, superconducting device, and manufacturing method of semiconductor device
#157Semiconductor devices and methods of manufacturing the same
#158Semiconductor graphene structures, semiconductor devices including such structures, and related methods
#159Stretchable form of single crystal silicon for high performance electronics on rubber substrates
#160Graphene transistor
#161Production device for a graphene thin film
#162Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
#163Graphene devices and methods of fabricating the same
#164Transistors, methods of forming transistors and display devices having transistors
#165Transparent conductive film and electric device
#166Method for manufacturing graphene film and graphene channel of transistor
#167Methods for forming semiconductor materials in STI trenches
#168Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material
#169III-nitride P-channel field effect transistor with hole carriers in the channel
#170Heterogeneous layered structure, method of preparing the heterogeneous layered structure, and electronic device including the heterogeneous layered structure
#171Memory device using graphene as charge-trap layer and method of operating the same
#172High electron mobility transistors
#173Semiconductor devices with field plates
#174Semiconductor heterostructure field effect transistor and method for making thereof
#175Recessed gate field effect transistor
#176Composite layer stacking for enhancement mode transistor
#177Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same
#178High electron mobility transistor and method of driving the same
#179Gallium nitride power devices
#180Split-gate memory cell with substrate stressor region, and method of making same
#181Support lines to prevent line collapse in arrays
#182Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device
#183Threshold adjustment for quantum dot array devices with metal source and drain
#184Transistors incorporating metal quantum dots into doped source and drain regions
#185Device with strained layer for quantum well confinement and method for manufacturing thereof
#186Methods for manufacturing a field-effect semiconductor device
#187Spin filter and driving method thereof
#188Nitride-based semiconductor device and manufacturing method thereof
#189Semiconductor device having germanium active layer with underlying diffusion barrier layer
#190DIELECTRIC FOR CARBON-BASED NANO-DEVICES
#191Semiconductor devices and methods of manufacturing the same
#192Transistor device with reduced gate resistance
#193Side-gate defined tunable nanoconstriction in double-gated graphene multilayers
#194Semiconductor device and manufacturing method of the same
#195Graphene transistors with self-aligned gates
#196Graphene channel-based devices and methods for fabrication thereof
#197Graphene transistors with self-aligned gates
#198Epitaxial stucture
#199N-polar III-nitride transistors
#200Graphene semiconductor device, manufacturing method thereof, organic light emitting display, and memory including graphene semiconductor device
#201Increasing carrier injection velocity for integrated circuit devices
#202Circuit including a negative differential resistance (NDR) device having a graphene channel, and method of operating the circuit
#203Graphene channel-based devices and methods for fabrication thereof
#204Controlled synthesis of monolithically-integrated graphene structure
#205Bilayer gate dielectric with low equivalent oxide thickness for graphene devices
#206Semiconductor substrates using bandgap material between III-V channel material and insulator layer
#207Semiconductor substrates using bandgap material between III-V channel material and insulator layer
#208Graphene electronic device and manufacturing method thereof
#209Reducing contact resistance for field-effect transistor devices
#210Method for cleaning film formation apparatus and method for manufacturing semiconductor device
#211Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
#212Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same
#213Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors
#214SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#215Transistor device with reduced gate resistance
#216Transistor device with reduced gate resistance
#217Semiconductor device and method of manufacturing the same, and power supply apparatus
#218Semiconductor device
#219Graphene switching device having tunable barrier
#220Semiconductor Device and Manufacturing Method thereof
#221AIN buffer N-polar GaN HEMT profile
#222Semiconductor device and manufacturing method thereof
#223Fabrication of graphene nanoelectronic devices on SOI structures
#224Metal-free integrated circuits comprising graphene and carbon nanotubes
#225Graphene or carbon nanotube devices with localized bottom gates and gate dielectric
#226Apparatus and methods for improving parallel conduction in a quantum well device
#227SEMICONDUCTOR DEVICE WITH THRESHOLD VOLTAGE CONTROL AND METHOD OF FABRICATING THE SAME
#228Recessed gate field effect transistor
#229GRAPHENE CHANNEL TRANSISTORS AND METHOD FOR PRODUCING SAME
#230PMOS threshold voltage control by germanium implantation
#231Self-aligned contacts in carbon devices
#232Carbon field effect transistors having charged monolayers to reduce parasitic resistance
#233Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same
#234SiC semiconductor power device
#235Methods of forming structures having nanotubes extending between opposing electrodes and structures including same
#236Graphene device having physical gap
#237STRUCTURE AND METHOD OF MAKING GRAPHENE NANORIBBONS
#238Quantum well graphene structure formed on a dielectric layer having a flat surface
#239Self-aligned III-V field effect transistor (FET) and integrated circuit (IC) chip
#240III-V field effect transistory (FET) and III-V semiconductor on insulator (IIIVOI) FET, integrated circuit (IC) chip and method of manufacture
#241Self-aligned III-V field effect transistor (FET), integrated circuit (IC) chip with self-aligned III-V FETS and method of manufacture
#242Bi-layer pseudo-spin field-effect transistor
#243Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle
#244Nitride semiconductor element with N-face semiconductor crystal layer
#245Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same
#246High-speed graphene transistor and method of fabrication by patternable hard mask materials
#247Enhancement mode gallium nitride power devices
#248Transfer-free batch fabrication of single layer graphene devices
#249Graphene formation on dielectrics and electronic devices formed therefrom
#250SUBSTRATE, MANUFACTURING METHOD OF SUBSTRATE, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
#251DIELECTRIC LAYER FOR GALLIUM NITRIDE TRANSISTOR
#252Ultrathin spacer formation for carbon-based FET
#253Local bottom gates for graphene and carbon nanotube devices
#254Fabrication of graphene electronic devices using step surface contour
#255Graphene based switching device having a tunable bandgap
#256Graphene based switching device having a tunable bandgap
#257METHODS FOR GRAPHENE-ASSISTED FABRICATION OF MICRO-AND NANOSCALE STRUCTURES AND DEVICES FEATURING THE SAME
#258Printable semiconductor structures and related methods of making and assembling
#259Graphene device and method of manufacturing the same
#260Microwave semiconductor device using compound semiconductor and method for manufacturing the same
#261Microelectronic transistor having an epitaxial graphene channel layer
#262Gallium nitride based semiconductor devices and methods of manufacturing the same
#263Formation of a vicinal semiconductor-carbon alloy surface and a graphene layer thereupon
#264FIELD-EFFECT TRANSISTOR
#265Apparatus and methods for improving parallel conduction in a quantum well device
#266Self-aligned contacts in carbon devices
#267GRAPHENE PROCESSING FOR DEVICE AND SENSOR APPLICATIONS
#268Ultrathin spacer formation for carbon-based FET
#269Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same
#270Graphene channel-based devices and methods for fabrication thereof
#271Manufacture of graphene-based apparatus
#272Incorporation of functionalizing molecules in nano-patterned epitaxial graphene electronics
#273Sidewall graphene devices for 3-D electronics
#274Source/drain technology for the carbon nano-tube/graphene CMOS with a single self-aligned metal silicide process
#275ENHANCED BONDING INTERFACES ON CARBON-BASED MATERIALS FOR NANOELECTRONIC DEVICES
#276Formation of carbon-containing material
#277TRANSISTOR AND MANUFACTURING METHOD THEREOF
#278High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor
#279Graphene electronic device and method of fabricating the same
#280Circuit board including a graphene film having contact region covering a recessed region and a patterned metal film covering the contact region and in direct electrical contact therewith, and device including same
#281Density of states engineered field effect transistor
#282Complementary metal oxide semiconductor devices
#283Graphene grown substrate and electronic/photonic integrated circuits using same
#284Graphene Memory Cell and Fabrication Methods Thereof
#285Growing polygonal carbon from photoresist
#286Structure and method of forming buried-channel graphene field effect device
#287Remote Doped High Performance Transistor Having Improved Subthreshold Characteristics
#288Increasing carrier injection velocity for integrated circuit devices
#289Enhancement mode gallium nitride power devices
#290Fabrication of graphene nanoelectronic devices on SOI structures
#291Electronic device, light-receiving and light-emitting device, electronic integrated circuit and optical integrated circuit using the devices
#292Metal-free integrated circuits comprising graphene and carbon nanotubes
#293Graphene based switching device having a tunable bandgap
#294Graphene device and method of manufacturing the same
#295Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the same
#296SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#297Local bottom gates for graphene and carbon nanotube devices
#298Quantum well graphene structure
#2993-terminal electronic device and 2-terminal electronic device including an active layer including nanosheets
#300Semiconductor devices with field plates