208474 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface Vertical transistors
Semiconductor device and manufacturing method thereof
#302Semiconductor device and fabrication method of the same
#303Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
#304HEMT device and method of making
#305Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
#306III-nitride semiconductor device with trench structure
#307Trench type mosgated device with strained layer on trench sidewall
#308GaN-based field effect transistor of a normally-off type
#309Enhanced-mode high electron mobility transistor and method for forming the same
#310Fabrication of nanowire vertical gate devices
#311Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
#312Vertical transistor with uniform bottom spacer formed by selective oxidation
#313Semiconductor device with multiple carrier channels
#314Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
#315Double heterojunction group III-nitride structures