208474 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface Vertical transistors
A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING A VERTICAL HEMT
#2SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
#3TRANSISTOR BASED ON COMPACT DRAIN AND HETERO-MATERIAL STRUCTURE
#4DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
#5NITRIDE SEMICONDUCTOR DEVICE
#6SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
#7ELECTRONIC DEVICE
#8RF Power Transistor Having Off-Axis Layout
#9VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A FRONT-SIDE MEASURING ELECTRODE
#10SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
#11Nitride-based semiconductor device and method for manufacturing the same
#12NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#13SUPER-HETEROJUNCTION SCHOTTKY DIODE
#14FIELD EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON GAS CHANNELS
#15Method and system for fabrication of a vertical fin-based field effect transistor
#16NITRIDE SEMICONDUCTOR DEVICE
#17Semiconductor device, method of manufacturing the same and electronic device including the device
#18A LATERAL SURFACE GATE VERTICAL FIELD EFFECT TRANSISTOR WITH ADJUSTABLE OUTPUT CAPACITANCE
#19VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH CONNECTED FIN TIPS
#20A VERTICAL HEMT AND A METHOD TO PRODUCE A VERTICAL HEMT
#21SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
#22Heterostructure of an electronic circuit having a semiconductor device
#23GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
#24Fin-Shaped Semiconductor Device, Fabrication Method, and Application Thereof
#25Nitride-based semiconductor device and method for manufacturing the same
#26Field effect transistor device, and method for improving short-channel effect and output characteristic thereof
#27SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#28Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same
#29SEMICONDUCTOR APPARATUS AND METHOD FOR FABRICATING SAME
#30VERTICAL FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR AND COMPONENT HAVING VERTICAL FIELD-EFFECT TRANSISTORS
#31Core-shell nanofin vertical switch and high-voltage switching
#32SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#33Fin-shaped semiconductor device, fabrication method, and application thereof
#34SEMICONDUCTOR DEVICE
#35MOSFET WITH SATURATION CONTACT AND METHOD FOR FORMING A MOSFET WITH SATURATION CONTACT
#36Hole Channel Semiconductor Transistor, Manufacturing Method, and Application thereof
#37SEMICONDUCTOR DEVICE
#38MICROELECTRONIC DEVICE
#39Electrode structure for vertical group III-V device
#40Nitride semiconductor device
#41Method and system for fabrication of a vertical fin-based field effect transistor
#42VERTICAL FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME
#43Semiconductor device and method for manufacturing the same
#44Vertical field-effect transistor and method for forming same
#45Ion implantation to control formation of MOSFET trench-bottom oxide
#46Formation of semiconductor arrangement comprising semiconductor column
#47Transistor
#48Semiconductor structure and manufacturing method for the same
#49HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND METHOD OF MANUFACTURING THE SAME
#50Wimpy vertical transport field effect transistor with dipole liners
#51Semiconductor device
#52Heterojunction semiconductor device with low on-resistance
#53Nitride semiconductor device
#54Polarization controlled transistor
#55GaN-based superjunction vertical power transistor and manufacturing method thereof
#56Electrode structure for vertical group III-V device
#57Three dimensional vertically structured electronic devices
#58Etch-less AlGaN GaN trigate transistor
#59Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same
#60High electron mobility transistor and fabrication method thereof
#61High electron mobility transistor and fabrication method thereof
#62Group III nitride substrate, method of making, and method of use
#63Vertical nitride semiconductor transistor device
#64Nitride semiconductor device
#65Three dimensional vertically structured electronic devices
#66Semiconductor structure, transistor including the same, and method of manufacturing transistor
#67Doped gate dielectrics materials
#68High electron mobility transistor and fabrication method thereof
#69VERTICAL CHANNEL DEVICE
#70High electron mobility transistor (HEMT) devices and methods
#71Compound semiconductor, method for manufacturing same, and nitride semiconductor
#72Semiconductor device with compact contact portion, method of manufacturing the same and electronic device including the same
#73Method and system for fabrication of a vertical fin-based field effect transistor
#74Passivated transistors
#75Half-bridge circuit including integrated level shifter transistor
#76Nitride semiconductor device
#77Nitride semiconductor device
#78Semiconductor device
#79One-time programmable device compatible with vertical transistor processing
#80Lateral III-nitride devices including a vertical gate module
#81Field-effect transistors and methods of manufacturing the same
#82Vertical superlattice transistors
#83Gate first technique in vertical transport FET using doped silicon gates with silicide
#84Semiconductor device, method of manufacturing the same and electronic device including the device
#85Vertical diode in stacked transistor architecture
#86Group III-nitride based vertical power device and system
#87Double gate transistor device and method of operating
#88Lateral III-nitride devices including a vertical gate module
#89GaN lateral vertical HJFET with source-P block contact
#90GaN lateral vertical JFET with regrown channel and dielectric gate
#91Vertical group III-N devices and their methods of fabrication
#92Semiconductor device, method of manufacturing the same, and electronic device including the device
#93Heterostructure of an electronic circuit having a semiconductor device
#94Electronic devices with ultra-high dielectric constant passivation and high mobility materials
#95Layered vertical field effect transistor and methods of fabrication
#96Semiconductor device and method for manufacturing the same
#97Gallium nitride transistor
#98IC unit and method of manufacturing the same, and electronic device including the same
#99Semiconductor device including stressed source/drain, method of manufacturing the same and electronic device including the same
#100Semiconductor device
#101Methods of forming merged source/drain regions on integrated circuit products
#102Perpendicular magnetic tunnel junction memory cells having vertical channels
#103Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channels
#104Compound semiconductor, method for manufacturing same, and nitride semiconductor
#105Fabrication of nanowire vertical gate devices
#106III-NITRIDE VERTICAL TRANSISTOR WITH APERTURE REGION FORMED USING ION IMPLANTATION
#107Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same
#108Device comprising 2D material
#109Method of fabricating device including two-dimensional material
#110Method of fabricating device including two-dimensional material
#111MUTILAYER STRUCTURE CONTAINING A CRYSTAL MATCHING LAYER FOR INCREASED SEMICONDUCTOR DEVICE PERFORMANCE
#112Ambipolar synaptic devices
#113SEMICONDUCTOR DEVICE, ELECTRONIC PART, ELECTRONIC APPARATUS, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#114Trench-gated heterostructure and double-heterostructure active devices
#115Semiconductor device and method for manufacturing the same
#116Semiconductor device
#117Semiconductor device
#118Transistors with octagon waffle gate patterns
#119Vertical III-N transistors with lateral overgrowth over a protruding III-N semiconductor structure
#120Semiconductor device with III-nitride channel region and silicon carbide drift region
#121Polarization-doped enhancement mode HEMT
#122Method for manufacturing semiconductor device
#123Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region
#124VeSFET chemical sensor and methods of use thereof
#125Nitride semiconductor device
#126Tight pitch inverter using vertical transistors
#127Electronic device using group III nitride semiconductor and its fabrication method
#128Electronic device using group III nitride semiconductor and its fabrication method
#129Electronic device using group III nitride semiconductor and its fabrication method
#130Electronic device using group III nitride semiconductor and its fabrication method
#131Diamond based current aperture vertical transistor and methods of making and using the same
#132IC unit and methond of manufacturing the same, and electronic device including the same
#133Semiconductor device, method of manufacturing the same and electronic device including the same
#134Doped gate dielectric materials
#135Semiconductor device, method of manufacturing the same and electronic device including the device
#136Semiconductor device and manufacturing method of the same
#137Semiconductor device
#138Top contact resistance measurement in vertical FETS
#139Nitride semiconductor device
#140Ambipolar synaptic devices
#141GaN semiconductor device comprising carbon and iron
#142III-Nitride transistor with enhanced doping in base layer
#143Semiconductor device
#144Double gate transistor device and method of operating
#145III-nitride based N polar vertical tunnel transistor
#146Three dimensional vertically structured electronic devices
#147METHOD FOR FORMATION OF VERTICAL CYLINDRICAL GaN QUANTUM WELL TRANSISTOR
#148Three dimensional vertically structured MISFET/MESFET
#149Three dimensional vertically structured electronic devices
#150Lateral/vertical semiconductor device with embedded isolator
#151Semiconductor device and method of making a semiconductor device
#152Semiconductor device and method of manufacturing same
#153Method for producing trench high electron mobility devices
#154Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
#155GaN semiconductor device comprising carbon and iron
#156Semiconductor structures and methods for multi-level work function
#157Semiconductor arrangement comprising buffer layer and semiconductor columns over the buffer layer and formation thereof
#158Semiconductor device
#159Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
#160Ambipolar synaptic devices
#161MULTILAYER STRUCTURE CONTAINING A CRYSTAL MATCHING LAYER FOR INCREASED SEMICONDUCTOR DEVICE PERFORMANCE
#162Vertical semiconductor device and manufacturing method thereof
#163Nitride semiconductor device
#164Vertical semiconductor device structure and method of forming
#165Enhancement mode III-N HEMTs
#166Method of making a three-dimensional memory device having a heterostructure quantum well channel
#167Nitride semiconductor device
#168Method and power semiconductor device having an insulating region arranged in an edge termination region
#169III-nitride transistor with trench gate
#170Semiconductor device and method of manufacturing the same
#171Semiconductor device and method of manufacturing the same
#172Integrated circuitry components, switches, and memory cells
#173Power device with high aspect ratio trench contacts and submicron pitches between trenches
#174Reliable and robust electrical contact
#175Gate all around device structure and Fin field effect transistor (FinFET) device structure
#176Compound semiconductor device and manufacturing method of the same
#177Group III nitride semiconductor device which can be used as a power transistor
#178Heterojunction semiconductor device having integrated clamping device
#179Transistors, semiconductor devices, and methods of manufacture thereof
#180Cascode semiconductor device structure and method therefor
#181Method of forming a high electron mobility semiconductor device and structure therefor
#182SEMICONDUCTOR DEVICE
#183Enhancement mode III-N HEMTs
#184III-nitride transistor with enhanced doping in base layer
#185Vertical transistor and method of manufacturing the same
#186SILICON CARBIDE SEMICONDUCTOR DEVICE
#187Semiconductor device and method of manufacturing the same
#188Heterojunction semiconductor device and manufacturing method
#189Formation of semiconductor arrangement comprising buffer layer and semiconductor column overlying buffer layer
#190Multichannel transistor
#191HEMT DEVICE AND FABRICATION METHOD
#192SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#193Compound semiconductor device and method for fabricating the same
#194III-V TRANSISTOR AND METHOD FOR MANUFACTURING SAME
#195Semiconductor device, manufacturing method thereof, electronic device and vehicle
#196Methods of forming III-V semiconductor structures using multiple substrates, and semiconductor devices fabricated using such methods
#197III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same
#198Transistor having nitride semiconductor used therein and method for manufacturing transistor having nitride semiconductor used therein
#199CMOS image sensors including vertical transistor
#200Ambipolar synaptic devices
#201Transistor, semiconductor device and method of manufacturing the same
#202Ambipolar synaptic devices
#203Semiconductor structures and methods for multi-dimension of nanowire diameter to improve drive current
#204Thin film transistor and method for producing same
#205COMPOUND SEMICONDUCTOR DEVICE HAVING A GATE ELECTRODE AND METHOD OF MANUFACTURING THE SAME
#206Semiconductor device and method for forming the same
#207Nitride-based transistors having structures for suppressing leakage current
#208Power semiconductor package with integrated heat spreader and partially etched conductive carrier
#209Method for producing a semiconductor device with surrounding gate transistor
#210Semiconductor device with surrounding gate transistor
#211Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
#212Half-bridge circuit including a low-side transistor and a level shifter transistor integrated in a common semiconductor body
#213GaN based semiconductor device and method of manufacturing the same
#214Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturing
#215Lateral/vertical semiconductor device with embedded isolator
#216Memory arrays, semiconductor constructions, and methods of forming semiconductor constructions
#217RADIATION RESISTANT CMOS DEVICE AND METHOD FOR FABRICATING THE SAME
#218Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
#219VERTICAL TRANSISTORS HAVING P-TYPE GALLIUM NITRIDE CURRENT BARRIER LAYERS AND METHODS OF FABRICATING THE SAME
#220Gallium nitride power semiconductor device having a vertical structure
#221Trench high electron mobility transistor device
#222Enhancement mode III-N HEMTs
#223Method for manufacturing semiconductor apparatus having fluorine containing region formed in recessed portion of semiconductor layer
#224Two-dimensional material containing electronic components
#225Vertical gallium nitride transistors and methods of fabricating the same
#226Semiconductor device
#227NITRIDE ELECTRONIC DEVICE AND METHOD FOR FABRICATING NITRIDE ELECTRONIC DEVICE
#228Semiconductor device, manufacturing method thereof, electronic device and vehicle
#229High electron mobility transistor and method of forming the same
#230High electron mobility transistor and manufacturing method thereof
#231HEMT with compensation structure
#232Vertical microelectronic component and corresponding production method
#233Transistors, semiconductor devices, and methods of manufacture thereof
#234Semiconductor stacked body, method for manufacturing same, and semiconductor element
#235Normally-off compound semiconductor tunnel transistor with a plurality of charge carrier gases
#236Heterojunction semiconductor device with conductive barrier portion and manufacturing method
#237Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
#238Semiconductor device and method for producing the same
#239Semiconductor device and method for producing the same
#240Semiconductor device and method for producing same
#241Normally-off compound semiconductor tunnel transistor
#242Transistor having increased breakdown voltage
#243Integrated circuitry components, switches, and memory cells
#244Semiconductor device and method for producing the same
#245Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same
#246Vertical GaN-based semiconductor device
#247Methods of forming graphene-containing switches
#248Compound semiconductor device and manufacturing method of the same
#249Compound semiconductor device and method for fabricating
#250HEMT with integrated low forward bias diode
#251Vertical field effect transistor on oxide semiconductor substrate
#252Methods of forming graphene-containing switches
#253Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer
#254Semiconductor device, manufacturing method thereof, electronic device and vehicle
#255Integrated circuit arrays and semiconductor constructions
#256Semiconductor device and method for manufacturing same
#257SiC semiconductor power device
#258Nanowire and larger GaN based HEMTs
#259Vertical power transistor device, semiconductor die and method of manufacturing a vertical power transistor device
#260Compound semiconductor device and its manufacture method
#261Semiconductor device and method for manufacturing same
#262Semiconductor apparatus having fluorine containing region formed in recessed portion of semiconductor layer
#263COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#264Compound semiconductor device and manufacturing method of the same
#265NANOSTRUCTURE ARRAY TRANSISTOR
#266NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#267Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same
#268Semiconductor device and method for manufacturing same
#269Compound semiconductor device and manufacturing method thereof
#270SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
#271Nanowire and larger GaN based HEMTS
#272Semiconductor device and method for producing the same
#273Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials
#274Semiconductor component and method for manufacturing of the same
#275Method of removing a compound semiconductor layer from a compound semiconductor device
#276Field effect transistor and method of manufacturing the same
#277Hetero-structure field effect transistor, integrated circuit including a hetero-structure field effect transistor and method for manufacturing a hetero-structure field effect transistor
#278Compound semiconductor device and manufacturing method of the same
#279Method for fabricating semiconductor device
#280Semiconductor device having hetero junction
#281Gallium nitride semiconductor device and method for producing the same
#282Enhancement-mode nitride transistor
#283ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS
#284Nitride semiconductor device including gate insulating portion containing AIN
#285Transistor
#286Compound semiconductor device and its manufacture method
#287Enhancement mode III-N HEMTs
#288Semiconductor devices and method of manufacturing them
#289Nitride semiconductor device with a vertical channel and method for producing the nitride semiconductor device
#290III-nitride semiconductor device with trench structure
#291HEMT including MIS structure
#292Field effect transistor including two group III-V compound semiconductor layers
#293Semiconductor device having vertical electrodes structure
#294Group III nitride based semiconductor device having trench structure or mesa structure and production method therefor
#295Semiconductor device
#296Current aperture transistors and methods of fabricating same
#297Trench type MOSgated device with strained layer on trench sidewall
#298Heterostructure field effect transistor and associated method
#299Vertical heterostructure field effect transistor and associated method
#300Field effect transistor including a group III-V compound semiconductor layer