208482 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
Method for fabricating transistor with thinned channel
#302Semiconductor device and method of producing same
#303High-voltage transistor fabrication with trench etching technique
#304Silicon carbide power devices with self-aligned source and well regions
#305N+ poly on high-k dielectric for semiconductor devices
#306High-breakdown-voltage insulated gate semiconductor device
#307Abrupt channel doping profile for fermi threshold field effect transistors
#308Methods of fabricating contact regions for FET incorporating SiGe
#309MOSFET and optical coupling device having the same
#310Semiconductor device method of manufacturing a quantum well structure and a semiconductor device comprising such a quantum well structure
#311Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same
#312Reverse MOS (RMOS) transistor, and methods of making and using the same
#313Strained silicon, gate engineered Fermi-FETs
#314Low noise field effect transistor
#315Self-biasing transistor structure and an SRAM cell having less than six transistors
#316Methods of fabricating strained-channel FET having a dopant supply region
#317Accumulation device with charge balance structure and method of forming the same
#318Reverse-connect protection circuit with a low voltage drop
#319Schottky device
#320Active pixel having buried transistor
#321Active pixel having buried transistor
#322MOS transistor
#323Gate technology for strained surface channel and strained buried channel MOSFET devices
#324High voltage operating field effect transistor, bias circuit therefor and high voltage circuit thereof
#325Semiconductor device and method for manufacturing same
#326Method for fabricating a p-channel field-effect transistor on a semiconductor substrate
#327MOS power component with a reduced surface area
#328Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits
#329Field-effect-controllable semiconductor component and method for producing the semiconductor component
#330Semiconductor device and production method therefor
#331Semiconductor device and method of manufacturing the same
#332Semiconductor device and method for fabricating the same
#333Buried-channel low noise transistors and methods of making such devices
#334On-chip voltage generator for back-biasing field effect transistors in a circuit block
#335Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication
#336Embedded non-volatile memory (NVM) on fully depleted silicon-on-insulator (FD-SOI) substrate
#337Devices and methods for fully depleted silicon-on-insulator back biasing
#338Contact scheme for landing on different contact area levels
#339Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions
#340Integrated circuits and methods for fabricating integrated circuits with non-volatile memory structures
#341Backside semiconductor growth
#342Electronic chip comprising transistors with front and back gates
#343Wide bandgap semiconductor device with adjustable voltage level
#344Pass-through contact using silicide
#345Reduced resistance short-channel InGaAs planar MOSFET
#346Preventing unauthorized use of integrated circuits for radiation-hard applications
#347Buried channel deeply depleted channel transistor