208483 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
Process of manufacturing an N-type Schottky barrier tunnel transistor
#302Device using ambipolar transport in SB-MOSFET and method for operating the same
#303Transistor using impact ionization and method of manufacturing the same
#304Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
#305Semiconductor device
#306Semiconductor device
#307Economical and very simple to fabricate single device equivalent to CMOS, and other semiconductor devices in compensated semiconductor
#308ACCUFET with Schottky source contact
#309Schottky barrier CMOS device and method
#310Schottky barrier source/drain n-mosfet using ytterbium silicide
#311Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#312Field effect transistor
#313Semiconductor device and manufacturing method thereof
#314Dynamic schottky barrier MOSFET device and method of manufacture
#315Field effect transistor and method of fabrication
#316Method of fabricating memory transistor
#317Schottky-barrier mosfet manufacturing method using isotropic etch process
#318Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
#319Schottky barrier integrated circuit
#320Field effect transistor and manufacturing method thereof
#321Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#322MISFET
#323Field-effect transistors with weakly coupled layered inorganic semiconductors
#324Short-channel Schottky-barrier MOSFET device and manufacturing method
#325Field effect transistor and method of fabrication
#326Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
#327Metal-semiconductor contact structure based on two-dimensional semimetal electrodes
#328Devices for LDMOS and other MOS transistors with hybrid contact
#329Transistors with dielectric-isolated source and drain regions
#330Schottky contact structure for semiconductor devices and method for forming such schottky contact structure
#331Method for forming vertical Schottky contact FET
#332EPROM cells, EPROM cell arrays including the same, and methods of fabricating the same
#333Tunnel FET