208483 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
SEMICONDUCTOR DEVICE AND METHODS OF FORMING
#2NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CONTACTS WITH NEGATIVE SCHOTTKY BARRIER HEIGHT
#3SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#4SEMICONDUCTOR DEVICES WITH SCHOTTKY BARRIERS
#5SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#6Graphene transistor and method of manufacturing a graphene transistor
#7SEMICONDUCTOR DEVICE
#8SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#9CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES
#10Method for preparing semiconductor device with contact structure
#11Semiconductor device and methods of forming
#12NEUROMORPHIC DEVICE HAVING THREE-DIMENSIONAL STACKED STRUCTURE AND METHOD OF FABRICATING THE SAME
#13Single-gate field effect transistor and method for modulating the drive current thereof
#14Nanowire structures having non-discrete source and drain regions
#15Method of manufacturing a transistor
#16Transistors with schottky barriers
#17Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
#18Semiconductor device with contact structure and method for preparing the same
#19NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#20HEMT and fabricating method of the same
#21MOSFET transistors with hybrid contact
#22Metal-to-semiconductor contact including a 2D crystal material layer
#23Semiconductor device and method for manufacturing the same
#24Semiconductor device and methods of forming
#253D NAND flash memory device
#26Graphene transistor and method of manufacturing a graphene transistor
#27Method of manufacturing a transistor
#28SCHOTTKY BARRIER THIN FILM TRANSISTOR AND ITS METHOD OF MANUFACTURE
#29Contact structures in semiconductor devices
#30Non-volatile memory systems based on single nanoparticles for compact and high data storage electronic devices
#31Contact structures for semiconductor devices
#32Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#33Methods for LDMOS and other MOS transistors with hybrid contact
#34Normally-off gallium oxide field-effect transistor structure and preparation method therefor
#35Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
#36Switch with integrated Schottky barrier contact
#37Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#38Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#39Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#40Nanowire structures having non-discrete source and drain regions
#41Semiconductor devices with metal contacts including crystalline alloys
#42Impact ionization semiconductor device and manufacturing method thereof
#43Impact ionization semiconductor device and manufacturing method thereof
#44Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
#45Semiconductor device including standard cells with header/footer switch including negative capacitance
#46Junctionless field-effect transistor having metal-interlayer-semiconductor structure and manufacturing method thereof
#47Secure fingerprint data generating device
#48Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#49Semiconductor device with recessed source/drain contacts and a gate contact positioned above the active region
#50Flash memory device and manufacture thereof
#51TRANSISTORS WITH DIELECTRIC-ISOLATED SOURCE AND DRAIN REGIONS
#52Method of providing source and drain doping for CMOS architecture including FinFET and semiconductor devices so formed
#53Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
#54Electronic device based on black phosphorous single channel with multi-function and method of manufacturing the same
#55Semiconductor device including standard cells with header/footer switch including negative capacitance
#56Semiconductor device with recessed source/drain contacts and a gate contact positioned above the active region
#57SEMICONDUCTOR DEVICE
#58Diode, semiconductor device, and MOSFET
#59Programmable tunnel thermionic mode transistor
#60Semiconductor devices with shaped portions of elevated source/drain regions
#61Schottky contact structure for semiconductor devices and method for forming such Schottky contact structure
#62Device including a sidewall Schottky interface
#63Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#64Synthesis and fabrication of transition metal dichalcogenide structures
#65Devices and methods for a power transistor having a Schottky or Schottky-like contact
#66High-voltage metal-oxide-semiconductor transistor capable of preventing occurrence of exceedingly-large reverse current
#67Ferroelectric-modulated Schottky non-volatile memory
#68Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#69SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME
#70Semiconductor device and method manufacturing the same
#71Impact ionization semiconductor device and manufacturing method thereof
#72Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
#73Ternary barristor with schottky junction graphene semiconductor
#74Flash memory device and manufacture thereof
#75Electronic device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing
#76Integrated circuits having transistors with high holding voltage and methods of producing the same
#77METHOD OF CONTACT FORMATION BETWEEN METAL AND SEMICONDUCTOR
#78METHOD FOR OPERATION OF A FIELD EFFECT TRANSISTOR ARRANGEMENT
#79Silicon carbide semiconductor device
#80Semiconductor device including metal-semiconductor junction
#81Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#82Vertical schottky contact FET
#83Insulated gate turn-off device with turn-off Schottky-Barrier MOSFET
#84SEMICONDUCTOR DEVICE BASED ON WIDEBAND GAP SEMICONDUCTOR MATERIALS
#85Reconfigurable nanowire field effect transistor, a nanowire array and an integrated circuit thereof
#86Semiconductor device and related manufacturing method
#87Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same
#88Devices and methods for a power transistor having a schottky or schottky-like contact
#89DIODE STRUCTURES WITH CONTROLLED INJECTION EFFICIENCY FOR FAST SWITCHING
#90Nonvolatile memory device
#91BURIED SOURCE SCHOTTKY BARRIER THIN TRANSISTOR AND METHOD OF MANUFACTURE
#92Nonvolatile memory cell employing hot carrier effect for data storage
#93Ionic barristor
#94Annealed metal source drain overlapping the gate of a fin field effect transistor
#95SBFET transistor and corresponding fabrication process
#96Nanowire structures having non-discrete source and drain regions
#97Insulated gate field effect transistor having passivated schottky barriers to the channel
#98Semiconductor device having metallic source and drain regions
#99Semiconductor device and method of manufacturing semiconductor device
#100Semiconductor structure and manufacturing method thereof
#101Diode, semiconductor device, and MOSFET
#102Semiconductor device using diamond
#103Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#104Integration of hybrid germanium and group III-V contact epilayer in CMOS
#105THIN-FILM TRANSISTOR WITH CARRIER INJECTION STRUCTURE
#106Semiconductor device and related manufacturing method
#107Annealed metal source drain overlapping the gate
#108BURIED SOURCE SCHOTTKY BARRIER THIN FILM TRANSISTOR AND METHOD OF MANUFACTURE
#109Semiconductor devices with shaped portions of elevated source/drain regions
#110FIELD EFFECT TRANSISTOR ARRANGEMENT
#111Electronics device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing
#112Semiconductor device having a metal-semiconductor junction and manufacturing therefor
#113Diode structures with controlled injection efficiency for fast switching
#114Integrated circuits with dual silicide contacts and methods for fabricating same
#115Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#116Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#117Schottky device and method of manufacture
#118Semiconductor device, method of fabricating the same, and apparatus used in fabrication thereof
#119Devices having inhomogeneous silicide schottky barrier contacts
#120Semiconductor structure with active device and damaged region
#121Schottky clamped radio frequency switch
#122Graphene-metal bonding structure, method of manufacturing the same, and semiconductor device having the graphene-metal bonding structure
#123Manufacturing method for forming semiconductor structure
#124Semiconductor device and manufacturing method
#125Nanowire structures having non-discrete source and drain regions
#126Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#127III-V compound semiconductor device having metal contacts and method of making the same
#128Semiconductor device
#129Embedded optical sensors using transverse Fabry-Perot resonator as detectors
#130Flexible graphene switching device
#131MISHFET and Schottky device integration
#132Semiconductor device and fabrication method of semiconductor device
#133Devices having inhomogeneous silicide schottky barrier contacts
#134High voltage device having Schottky diode
#135Semiconductor device having a gate dielectric film which is thinner below a source or drain electrode than below a channel region
#136III-V compound semiconductor device having metal contacts and method of making the same
#137Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same
#138Through silicon via processing method for lateral double-diffused MOSFETs
#139Trench junction barrier controlled Schottky
#140Semiconductor structure with hard mask disposed on the gate structure
#141Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)
#142Graphene devices and methods of fabricating the same
#143Insulated gate field effect transistor having passivated schottky barriers to the channel
#144Carbon-doped cap for a raised active semiconductor region
#145Semiconductor device including switching devices in an epitaxial layer
#146VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF FORMING THE SAME
#147Integrated circuit comprising a MOS transistor having a sigmoid response and corresponding method of fabrication
#148Semiconductor structure and method for manufacturing the same
#149Semiconductor device
#150Breakdown voltage blocking device
#151Semiconductor device
#152Diode, semiconductor device, and MOSFET
#153Nanowire structures having non-discrete source and drain regions
#154Semiconductor device having metallic source and drain regions
#155III-V compound semiconductor device having metal contacts and method of making the same
#156Field effect transistor having germanium nanorod and method of manufacturing the same
#157Semiconductor device and method for producing the same
#158Ambipolar silicon nanowire field effect transistor
#159FORMATION METHOD AND STRUCTURE FOR A WELL-CONTROLLED METALLIC SOURCE/DRAIN SEMICONDUCTOR DEVICE
#160Wide band gap semiconductor device and method for producing the same
#161Enhanced electron mobility at the interface between GdO(100)/N-Si(100)
#162Non-planar transistors and methods of fabrication thereof
#163Schottky junction source/drain transistor and method of making
#164Semiconductor device including gate and conductor electrodes
#165SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR WITH CARBON-CONTAINING INSULATION LAYER AND METHOD FOR FABRICATING THE SAME
#166FIELD-EFFECT TRANSISTOR ON A SELF-ASSEMBLED SEMICONDUCTOR WELL
#167Insulated gate field effect transistor having passivated schottky barriers to the channel
#168Asymmetric source-drain field-effect transistor having a mixed schottky/P-N junction and method of making
#169Method of fabricating an epitaxial Ni silicide film
#170Field transistor structure manufactured using gate last process
#171Deposition on a nanowire using atomic layer deposition
#172MOS transistor having combined-source structure with low power consumption and method for fabricating the same
#173FET with FUSI gate and reduced source/drain contact resistance
#174Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#175Through silicon via processing techniques for lateral double-diffused MOSFETS
#176Semiconductor switch device
#177FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
#178Hybrid MOSFET structure having drain side schottky junction
#179NANOWIRE MOSFET WITH DOPED EPITAXIAL CONTACTS FOR SOURCE AND DRAIN
#180Deposition on a nanowire using atomic layer deposition
#181Semiconductor device and manufacturing method thereof
#182Combined-source MOS transistor with comb-shaped gate, and method for manufacturing the same
#183Semiconductor device having a gate recess structure
#184SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#185POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE
#186Mixed Junction Source/Drain Field-Effect-Transistor and Method of Making the Same
#187METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
#188Method of fabrication and device configuration of asymmetrical DMOSFET with schottky barrier source
#189High voltage device having Schottky diode
#190Semiconductor device
#191DYNAMIC SCHOTTKY BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
#192LOW SCHOTTKY BARRIER SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
#193Formation method and structure for a well-controlled metallic source/drain semiconductor device
#194Self-aligned Schottky diode
#195METHOD OF FORMING OF A SEMICONDUCTOR FILM, METHOD OF MANUFACTURE OF A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
#196Methods of manufacturing CMOS transistor
#197Use of epitaxial Ni silicide
#198Schottky FET With All Metal Gate
#199FET with FUSI Gate and Reduced Source/Drain Contact Resistance
#200Schottky Junction Source/Drain FET Fabrication Using Sulfur or Flourine Co-Implantation
#201SCHOTTKY-BARRIER MOS TRANSISTOR ON A FULLY-DEPLETED SEMICONDUCTOR FILM AND PROCESS FOR FABRICATING SUCH A TRANSISTOR
#202Method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide
#203SOI schottky source/drain device structure to control encroachment and delamination of silicide
#204TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
#205TRANSISTOR AND MANUFACTURING METHOD THEREOF
#206Insulated gate field effect transistor having passivated schottky barriers to the channel
#207Vertical capacitive depletion field effect transistor
#208Semiconductor device including gate and three conductor electrodes
#209Field effect transistor having conductor electrode in contact with semiconductor layer
#210SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE
#211Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#212Method for making complementary P and N MOSFET transistors, electronic device including such transistors, and processor including at least one such device
#213MOSFET on silicon-on-insulator REDX with asymmetric source-drain contacts
#214Field-effect transistor and method for fabricating the same
#215Semiconductor device and method of producing the same
#216Method of manufacturing a CMOS device with zero soft error rate
#217Semiconductor device, radio frequency circuit, and radio frequency power amplifier
#218Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)
#219Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same
#220Non-planar transistors and methods of fabrication thereof
#221Self-aligned Schottky diode
#222Metal source and drain transistor having high dielectric constant gate insulator
#223Method of fabricating Schottky barrier FinFET device
#224Semiconductor device
#225SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#226Semiconductor switch device
#227Semiconductor device
#228Method of forming of a semiconductor film, method of manufacture of a semiconductor device and a semiconductor device
#229Method of fabricating Schottky barrier transistor
#230Semiconductor device
#231POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE
#232SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND MANUFACTURING METHOD
#233SCHOTTKY BARRIER INTEGRATED CIRCUIT
#234Dynamic Schottky barrier MOSFET device and method of manufacture
#235MOSFET switch with embedded electrostatic charge
#236CMOS transistor and method of manufacturing the same
#237METAL SOURCE/DRAIN SCHOTTKY BARRIER SILICON-ON-NOTHING MOSFET DEVICE
#238Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
#239Schottky barrier CMOS device and method
#240Method for forming one transistor DRAM cell structure
#241Nanowire MOSFET with doped epitaxial contacts for source and drain
#242Method for making a transistor with metallic source and drain
#243Low on-resistance wide band gap semiconductor device and method for producing the same
#244High performance schottky-barrier-source asymmetric MOSFETs
#245N-TYPE SCHOTTKY BARRIER TUNNEL TRANSISTOR AND MANUFACTURING METHOD THEREOF
#246Method and apparatus for producing graphene oxide layers on an insulating substrate
#247Method of manufacturing a Schottky barrier tunnel transistor
#248Schottky barrier source/drain N-MOSFET using ytterbium silicide
#249Semiconductor device and method of manufacturing the same
#250Schottky barrier source/drain N-MOSFET using ytterbium silicide
#251Method of fabricating Schottky barrier transistor
#252Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
#253Semiconductor device and method of manufacturing the same
#254Method of fabricating self aligned Schottky junctions for semiconductor devices
#255Asymmetric field effect transistors (FETs)
#256Method of forming a transistor having multiple types of Schottky junctions
#257Field effect transistor having germanium nanorod and method of manufacturing the same
#258Transistor manufacture
#259Field effect transistor
#260Method for fabricating Schottky barrier tunnel transistor
#261HIGH DENSITY SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
#262SCHOTTKY BARRIER NANOWIRE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
#263One transistor DRAM cell structure
#264Contact structure for semiconductor devices
#265Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
#266Nanowire MOSFET with doped epitaxial contacts for source and drain
#267Semiconductor Device
#268Semiconductor Device
#269Asymmetric field transistors (FETs)
#270SEMICONDUCTOR DEVICES
#271Low temperature fabrication of discrete silicon-containing substrates and devices
#272FinFET pMOS double gate semiconductor device with uniaxial tensile strain applied to channel by shrinkable gate electrode material, current flow in <110> crystal orientation, and source and drain Schottky contacts with channel and manufacturing method thereof
#273Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)
#274SCHOTTKY-BARRIER MOS TRANSISTOR ON A FULLY-DEPLETED SEMICONDUCTOR FILM AND PROCESS FOR FABRICATING SUCH A TRANSISTOR
#275Metal source/drain Schottky barrier silicon-on-nothing MOSFET device and method thereof
#276SB-MOSFET (Schottky barrier metal-oxide-semiconductor field effect transistor) with low barrier height and fabricating method thereof
#277Metal Source Power Transistor And Method Of Manufacture
#278Device configuration of asymmetrical DMOSFET with schottky barrier source
#279Field-effect transistors with weakly coupled layered inorganic semiconductors
#280Field-effect transistors with weakly coupled layered inorganic semiconductors
#281Method of manufacturing silicide layer for semiconductor device
#282Field effect transistor
#283Semiconductor device and manufacturing method thereof
#284Semiconductor device and method of manufacturing the same
#285Memory transistor and methods
#286Schottky barrier FinFET device and fabrication method thereof
#287Insulated gate planar integrated power device with co-integrated Schottky diode and process
#288CMOS device with zero soft error rate
#289Field-effect transistor and method for fabricating the same
#290Schottky barrier tunnel transistor and method of manufacturing the same
#291Insulated gate field effect transistor having passivated schottky barriers to the channel
#292Dynamic Schottky barrier MOSFET device and method of manufacture
#293Semiconductor device
#294Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
#295Field effect transistor and manufacturing method thereof
#296Semiconductor device and a method of manufacturing the same
#297High performance CMOS with metal-gate and Schottky source/drain
#298Asymmetric field effect transistors (FETs)
#299Short-channel Schottky-barrier MOSFET device and manufacturing method
#300Schottky barrier MOSFET device and circuit