208492 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
BURIED SHIELD STRUCTURES FOR POWER SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS
#2Diamond-Capped Gallium Oxide Transistor
#3SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AND AN OVERHANGING PORTION AND METHOD OF FABRICATION THEREFOR
#4Diamond-Capped Gallium Oxide Transistor
#5SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS
#6Field effect transistor with controllable resistance
#7INTEGRATED CIRCUITS WITH SELF-ALIGNED TUB ARCHITECTURE
#8Engineered substrate structures for power and RF applications
#9Engineered substrate structures for power and RF applications
#10Silicon carbide field-effect transistors
#11Field effect transistor with controllable resistance
#12Semiconductor device
#13Monolithic integrated circuit device having gate-sinking pHEMTs
#14Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices
#15Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods
#16Heterojunction devices and methods for fabricating the same
#17Methods of manufacturing engineered substrate structures for power and RF applications
#18Engineered substrate structures for power and RF applications
#19Semiconductor device, inverter circuit, driving device, vehicle, and elevator having a reduced on-resistance with a silicon carbide layer
#20Field effect transistor with controllable resistance
#21Semiconductor device
#22Active matrix OLED display with normally-on thin-film transistors
#23Field effect transistor with controllable resistance
#24Thin-film negative differential resistance and neuronal circuit
#25Integrated gate driver
#26Thin-film negative differential resistance and neuronal circuit
#27Low-power multi-stage amplifier for capacitive reading of low-amplitude and low-frequency signals
#28Field effect transistor with controllable resistance
#29Methods of manufacturing engineered substrate structures for power and RF applications
#30Thin-film negative differential resistance and neuronal circuit
#31Thin-film negative differential resistance and neuronal circuit
#32Heterojunction devices and methods for fabricating the same
#33Active matrix OLED display with normally-on thin-film transistors
#34Active matrix OLED display with normally-on thin-film transistors
#35Normally-off junction field-effect transistors and application to complementary circuits
#36Active matrix OLED display with normally-on thin-film transistors
#37Integrated gate driver
#38Engineered substrate structure for power and RF applications
#39Group III-N transistor on nanoscale template structures
#40Self-aligned heterojunction field effect transistor
#41Semiconductor device and method of manufacturing the same
#42Normally-off junction field-effect transistors and application to complementary circuits
#43Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
#44Structure and formation method of FinFET device
#45Group III-N transistors on nanoscale template structures
#46High mobility electron transistor
#47SEMICONDUCTOR DEVICE
#48Graded heterojunction nanowire device
#49Power semiconductor device with dual field plate arrangement and method of making
#50Area efficient field effect device
#51Group III-N transistor on nanoscale template structures
#52Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
#53Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
#54Group III-N transistors on nanoscale template structures
#55Vertical gallium nitride transistors and methods of fabricating the same
#56NITRIDE SEMICONDUCTOR DEVICE
#57Group III-N transistors on nanoscale template structures
#58Methods of making JFET devices with pin gate stacks
#59Thin film hybrid junction field effect transistor
#60Methods of fabricating nitride-based transistors with an ETCH stop layer
#61METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND THE SAME MANUFACTURED THEREOF
#62Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
#63High mobility electron transistor
#64Methods of making JFET devices with pin gate stacks
#65Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains
#66UNIAXIALLY STRAINED QUANTUM WELL DEVICE AND METHOD OF MAKING SAME
#67Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS
#68Semiconductor device
#69SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#70Increasing carrier injection velocity for integrated circuit devices
#71Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
#72Field effect transistor with a heterostructure
#73Transistor component having an amorphous semi-isolating channel control layer
#74Transistor component having an amorphous channel control layer
#75Compensated gate MISFET and method for fabricating the same
#76Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
#77Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods
#78Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
#79High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
#80JFET devices with PIN gate stacks
#81Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the same
#82MIS FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
#83Field effect transistor with frequency dependent gate-channel capacitance
#84MIS field effect transistor and method for manufacturing the same
#85High linearity doped-channel FET
#86Semiconductor device
#87Field effect transistor
#88Field effect transistor
#89AlGaN/GaN high electron mobility transistor devices
#90Field effect transistor with a heterostructure
#91Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
#92Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
#93POLARIZATION DOPED TRANSISTOR CHANNELS IN SIC HETEROPOLYTYPES
#94INTEGRATED CIRCUIT DEVICES HAVING AN EPITAXIAL PATTERN WITH A VOID REGION FORMED THEREIN AND METHODS OF FORMING THE SAME
#95Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal
#96Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
#97Nitride semiconductor device
#98GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME
#99Multi-functional electronic devices
#100Multi-functional chalcogenide electronic devices having gain
#101Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer
#102Insulated gate devices and method of making same
#103CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same
#104Structures with planar strained layers
#105Methods of fabricating semiconductor devices having strained dual channel layers
#106Nitride-based transistors and fabrication methods with an etch stop layer
#107Field effect transistor with a heterostructure and associated production method
#108Heterojunction transistors including energy barriers
#109Semiconductor device having a group III nitride semiconductor layer
#110Semiconductor device and fabrication method of the same
#111Buried and bulk channel finFET and method of making the same
#112Field effect transistor and method for manufacturing same
#113Methods of fabricating contact regions for FET incorporating SiGe
#114Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
#115Semiconductor device and manufacturing method thereof
#116Field effect transistor having a carrier exclusion layer
#117Transistor with a strained region and method of manufacture
#118Integrated transistor devices
#119AlGaN/GaN high electron mobility transistor devices
#120Ultra-linear multi-channel field effect transistor
#121Heterojunction field effect semiconductor device
#122High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof
#123Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein
#124Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
#125Enhancement of p-type metal-oxide-semiconductor field effect transistors
#126Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#127Power semiconductor device
#128Semiconductor device that can increase the carrier mobility and method for fabricating the same
#129Semiconductor device and method for fabricating the same
#130Semiconductor device and method for fabricating the same
#131Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits
#132Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same
#133Semiconductor device and method for fabricating the same
#134Silicon-carbide shielded-MOSFET embedded with a trench Schottky diode and heterojunction gate
#135Varactor with hyper-abrupt junction region including spaced-apart superlattices
#136Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same
#137Enhancement mode normally-off gallium nitride heterostructure field effect transistor
#138Overvoltage tolerant HFETs