208491 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Sub-classes:METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE AND BUCK CONVERTER
#2HETEROGENEOUS SUPERJUNCTION DEVICES
#3SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE LAYER AND CORRESPONDING METHOD OF PRODUCTION
#4SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#5Electrostatic discharge protection circuit
#6Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
#7Semiconductor one-time programmable memory for nanometer CMOS
#8Transistor having asymmetric threshold voltage and buck converter
#9Electrostatic discharge protection circuit
#10Wide bandgap semiconductor device
#11Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
#12Silicon carbide semiconductor component
#13Monolithic single chip integrated radio frequency front end module configured with single crystal acoustic filter devices
#14Quantum dot array devices
#15Transistor having asymmetric threshold voltage, buck converter and method of forming semiconductor device
#16Semiconductor device and method for manufacturing the same
#17Threshold voltage defined switches for programmable camouflage gates
#18ENHANCEMENT-MODE TRANSISTOR COMPRISING AN AlGaN/GaN HETEROJUNCTION AND A P-DOPED DIAMOND GATE
#19Silicon carbide semiconductor element and method for manufacturing the same
#20Film and organic semiconductor device containing the film
#21High voltage field effect transitor finger terminations
#22Semiconductor device
#23Semiconductor device
#24METHOD AND SYSTEM FOR OPERATING GALLIUM NITRIDE ELECTRONICS
#25Transistor and method of operating same
#26Semiconductor device including a strain relaxation film
#27Transistor with diamond gate
#28Trench isolation MOS P-N junction diode device and method for manufacturing the same
#29Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrate
#30Trench isolation MOS P-N junction diode device and method for manufacturing the same
#31JFET device structures and methods for fabricating the same
#32Semiconductor device
#33Protecting element having first and second high concentration impurity regions separated by insulating region
#34Trench isolation MOS P-N junction diode device and method for manufacturing the same
#35JFET device structures and methods for fabricating the same
#36FIELD EFFECT TRANSISTOR WITH GATE HAVING VARYING SHEET RESISTANCE
#37Electronic device and method of making the same
#38Semiconductor device having local interconnection layer and etch stopper pattern for preventing leakage of current
#39Method for creating a functional interface between a nanoparticle, nanotube or nanowire, and a biological molecule or system
#40Vertical field-effect transistor, method of manufacturing the same, and display device having the same
#41Protective device