208512 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched; Diodes; Schottky diodes of the trench MOS barrier type [TMBS]
Trench metal oxide semiconductor with recessed trench material and remote contacts
#302Semiconductor device and method for manufacturing same
#303Structure and method for forming a planar schottky contact
#304Semiconductor device and method for manufacturing same
#305Semiconductor device and rectifier system
#306Trench schottky barrier diode with differential oxide thickness
#307Schottky barrier semiconductor device
#308Semiconductor device and method of manufacturing the same
#309Planar SRFET using no additional masks and layout method
#310High switching speed two mask schottky diode with high field breakdown
#311Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
#312Process for manufacture of trench Schottky
#313SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
#314Forming of the periphery of a schottky diode with MOS trenches
#315Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof
#316Structure and method for a fast recovery rectifier structure
#317Trench Schottky device with single barrier
#318Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction
#319Semiconductor device having rectifying action
#320Semiconductor device having power transistors and Schottky barrier diode
#321Vertical unipolar component
#322Vertical unipolar component with a low leakage current
#323Power semiconductor switching element
#324Schottky diode with a vertical barrier
#325Vertical unipolar component periphery
#326Integrated fet and schottky device
#327Schottky barrier diode and method of making the same
#328Recessed termination for trench schottky device without junction curvature
#329Optimized trench power MOSFET with integrated schottky diode
#330Common MOSFET process for plural devices
#331Schottky with thick trench bottom and termination oxide and process for manufacture
#332Forming of the periphery of a schottky diode with MOS trenches
#333Trench Schottky barrier diode with differential oxide thickness
#334Semiconductor device having rectifying action
#335Thick field oxide termination for trench schottky device
#336Semiconductor device
#337High switching speed two mask Schottky diode with high field breakdown
#338Integrated FET and schottky device
#339Process for forming thick oxides on Si or SiC for semiconductor devices
#340Trench MOS rectifier with termination structure
#341Trench Schottky barrier rectifier and method for fabricating same
#342Silicon-carbide shielded-MOSFET embedded with a trench Schottky diode and heterojunction gate
#343Termination structure for insulated gate semiconductor device and method
#344Semiconductor device
#345Trenched power semiconductor element