208512 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched; Diodes; Schottky diodes of the trench MOS barrier type [TMBS]
SEMICONDUCTOR DEVICE
#2SCHOTTKY BARRIER DIODE DEVICE AND MANUFACTURING METHOD THEREFOR
#3SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
#4SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#5P-N JUNCTION DIODE
#6SEMICONDUCTOR DEVICE
#7SHIELDED GATE TRENCH DEVICES HAVING SHORT CHANNELS
#8JUNCTION BARRIER SCHOTTKY DIODE
#9SCHOTTKY BARRIER DIODE
#10SEMICONDUCTOR DEVICE AND PROCESSES FOR MAKING SAME
#11POWER SEMICONDUCTOR DEVICE
#12SEMICONDUCTOR MODULE
#13Semiconductor Device with Electric Field Management Structures
#14SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#15Manufacturing method of a semiconductor device with efficient edge structure
#16SCHOTTKY BARRIER DIODE
#17SCHOTTKY DIODE AND METHOD FOR FORMING THE SAME
#18SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
#19SUPER-JUNCTION MOS DEVICE WITH INTEGRATED TMBS STRUCTURE AND MANUFACTURING METHOD THEREOF
#20SCHOTTKY BARRIER DIODE
#21GAN-BASED TRENCH METAL OXIDE SCHOTTKY BARRIER DIODE AND PREPARATION METHOD THEREFOR
#22SCHOTTKY BARRIER DIODE
#23METHOD FOR MANUFACTURING A SCHOTTKY DIODE AND CORRESPONDING INTEGRATED CIRCUIT
#24ß-Ga2O3 Junction Barrier Schottky (JBS) Diodes with Sputtered p-Type NiO
#25SCHOTTKY BARRIER DIODE
#26Semiconductor schottky rectifier device
#27ELECTRON EXTRACTION TYPE FREE-WHEELING DIODE DEVICE AND PREPARATION METHOD THEREOF
#28Semiconductor device
#29SEMICONDUCTOR DEVICE
#30POWER SEMICONDUCTOR DEVICE
#31SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#32SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#33LOW LEAKAGE SCHOTTKY DIODE
#34SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#35Manufacturing method of a semiconductor device with efficient edge structure
#36Semiconductor Schottky rectifier device
#37SCHOTTKY BARRIER DIODE
#38Semiconductor device
#39Semiconductor device and manufacturing method thereof
#40Semiconductor device
#41SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#42Semiconductor structure with trench junction barrier schottky (TJBS) diode
#43Silicon carbide semiconductor device
#44SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
#45Power semiconductor device and manufacturing method thereof
#46Oxide field trench (OFT) diode control device
#47High voltage gallium oxide (GaO) trench MOS barrier schottky and methods of fabricating same
#48Multi-trench Schottky diode
#49Schottky barrier diode
#50Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices
#51Semiconductor device and electric device
#52Manufacturing method of a semiconductor device with efficient edge structure
#53Semiconductor Schottky rectifier device
#54Fin-based Schottky diode for integrated circuit (IC) products and methods of making such a Schottky diode
#55Schottky barrier diode
#56Schottky barrier diode
#57Termination structure for insulated gate semiconductor device and method
#58Semiconductor device
#59Semiconductor device
#60Crystalline semiconductor film, plate-like body and semiconductor device
#61Low leakage Schottky diode
#62Semiconductor device
#63Semiconductor device and manufacturing method thereof
#64Double trench MOSFET with trench gate
#65Deep trench surrounded MOSFET with planar MOS gate
#66Semiconductor device
#67DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF
#68Schottky barrier diode
#69Semiconductor device
#70SiC wide trench-type junction barrier Schottky diode and manufacturing method therefor
#71Method of manufacturing a semiconductor component
#72Semiconductor device
#73Crystalline semiconductor film, plate-like body and semiconductor device
#74Termination structure for insulated gate semiconductor device and method
#75Semiconductor device
#76MOS device with island region
#77Silicon carbide trench schottky barrier diode using polysilicon and a method of manufacturing the same
#78Semiconductor device
#79Trench MOS Schottky diode
#80Semiconductor device and production method thereof
#81Semiconductor apparatus
#82Termination structure for insulated gate semiconductor device and method
#83Termination structure for insulated gate semiconductor device and method
#84Trench semiconductor device having multiple active trench depths and method
#85Schottky barrier diode
#86Nanotube semiconductor devices
#87Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
#88Schottky device and method of manufacture
#89HIGH VOLTAGE SCHOTTKY DIODE
#90Semiconductor device comprising a three-dimensional field plate
#91Manufacturing method of a semiconductor device with efficient edge structure
#92Trench MOS-type Schottky diode
#93Schottky barrier diode
#94Termination structure for nanotube semiconductor devices
#95SiC wide trench-type junction barrier Schottky diode and manufacturing method therefor
#96Semiconductor device
#97Device and fabrication of MOS device with island region
#98Device including a sidewall Schottky interface
#99Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#100Schottky barrier rectifier
#101Deep trench MOS barrier junction all around rectifier and MOSFET
#102Semiconductor device and semiconductor device manufacturing method
#103Schottky barrier diode
#104Semiconductor device
#105High speed Schottky rectifier
#106SCHOTTKY BARRIER DIODE AND A METHOD OF MANUFACTURING THE SAME
#107Trench-based power semiconductor devices with increased breakdown voltage characteristics
#108Schottky integrated high voltage terminations and related HVIC applications
#109Self-aligned dual trench device
#110Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profiles
#111Method of forming trench semiconductor device having multiple trench depths
#112Unguarded schottky barrier diodes
#113Compliant bipolar micro device transfer head with silicon electrodes
#114Power device on bulk substrate
#115Crystalline semiconductor film, plate-like body and semiconductor device
#116Semiconductor device
#117Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device
#118Diode device and manufacturing method thereof
#119DMOS transistor with trench schottky diode
#120Semiconductor device
#121Electric assembly including a semiconductor switching device and a clamping diode
#122Semiconductor device and semiconductor device manufacturing method
#123Semiconductor device with schottky barrier diode
#124Semiconductor device and manufacturing method thereof
#125Field-effect transistor with integrated Schottky contact
#126Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs
#127Semiconductor device having schottky electrode connected to anode region
#128Self-aligned dual trench device
#129SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#130Method for manufacturing termination structure of semiconductor device
#131Semiconductor structure with a spacer layer
#132Compliant bipolar micro device transfer head with silicon electrodes
#133Diode device and method for manufacturing the same
#134Semiconductor device including a diode at least partly arranged in a trench
#135Semiconductor apparatus having a trench Schottky barrier Schottky diode
#136Semiconductor device having a trench MOS barrier Schottky diode
#137Unguarded schottky barrier diodes
#138Trench semiconductor device having multiple active trench depths and method
#139Trench semiconductor device having multiple trench depths and method
#140DMOS transistor with trench schottky diode
#141Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#142Semiconductor device with improved reverse recovery characteristics
#143Semiconductor device
#144Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#145Semiconductor device
#146Group III-N lateral schottky barrier diode and method for manufacturing thereof
#147Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode
#148Schottky device and method of manufacture
#149Semiconductor device and method of manufacturing the same
#150Semiconductor device
#151Dual oxide trench gate power MOSFET using oxide filled trench
#152Nanotube semiconductor devices
#153MONOLITHIC MERGED PIN SCHOTTKY DIODE STRUCTURE
#154MOS device with island region
#155Semiconductor device with field electrode structures, gate structures and auxiliary diode structures
#156Embedded tungsten resistor
#157Embedded tungsten resistor
#158Rectifier diode
#159Planar srfet using no additional masks and layout method
#160Diodes and methods of manufacturing diodes
#161Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
#162Trench insulated gate bipolar transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
#163Semiconductive device and associated method of manufacture
#164Termination structure of semiconductor device and method for manufacturing the same
#165Method for yield improvement of TMBS devices
#166Semiconductor diode and method of manufacture
#167Dual trench rectifier and method for forming the same
#168SEMICONDUCTOR DEVICE
#169Semiconductor device and manufacturing method thereof
#170Semiconductor device and manufacturing method thereof
#171Schottky device and method of manufacture
#172Schottky barrier diode
#173Compliant bipolar micro device transfer head with silicon electrodes
#174Trench field effect diodes and methods of manufacturing those diodes
#175Trench-based power semiconductor devices with increased breakdown voltage characteristics
#176Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
#177Trench-based power semiconductor devices with increased breakdown voltage characteristics
#178DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME
#179Semiconductor array having temperature-compensated breakdown voltage
#180Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a reduced surface field effect trench structure
#181Schottky device having conductive trenches and a multi-concentration doping profile therebetween
#182SEMICONDUCTOR DEVICE WITH A CURRENT SPREADING LAYER
#183Semiconductor device including a MOSFET
#184High-voltage trench junction barrier Schottky diode
#185Fabrication of MOS device with schottky barrier controlling layer
#186Semiconductor diode and method of manufacture
#187Semiconductor device and termination region structure thereof
#188Semiconductor device
#189Compliant bipolar micro device transfer head with silicon electrodes
#190Semiconductor device
#191Semiconductor device and method of manufacturing the same
#192Schottky barrier diode and fabricating method thereof
#193Trench-based device with improved trench protection
#194Schottky barrier diode
#195Breakdown voltage blocking device
#196Diode having trenches in a semiconductor region
#197MOSFET device with reduced breakdown voltage
#198Compliant bipolar micro device transfer head
#199Trench-based power semiconductor devices with increased breakdown voltage characteristics
#200Trench-based power semiconductor devices with increased breakdown voltage characteristics
#201Trench-based power semiconductor devices with increased breakdown voltage characteristics
#202Trench schottky diode
#203Schottky barrier device having a plurality of double-recessed trenches
#204High-voltage monolithic schottky device structure
#205Method of manufacturing semiconductor devices
#206Power semiconductor device and edge terminal structure thereof including an L-shaped electric-plate
#207SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#208Schottky barrier diode having a trench structure
#209Semiconductor diode and method of manufacture
#210Multi-trench termination structure for semiconductor device
#211Semiconductor device including a MOSFET and Schottky junction
#212Fabrication of MOS device with schottky barrier controlling layer
#213Fabrication of MOSFET device with reduced breakdown voltage
#214Trench Schottky barrier diode and manufacturing method thereof
#215TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS
#216Semiconductor power device having improved termination structure for mask saving
#217Semiconductor power device having wide termination trench and self-aligned source regions for mask saving
#218Semiconductor device including a diode arranged in a trench
#219Trench schottky diode and manufacturing method thereof
#220Semiconductor device with field electrode
#221Trench Schottky diode and method for manufacturing the same
#222SEMICONDUCTOR DEVICE
#223Power device with integrated Schottky diode and method for making the same
#224Planar SRFET using no additional masks and layout method
#225MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures
#226Shielded gate MOSFET-Schottky rectifier-diode integrated circuits with trenched contact structures
#227Nanotube semiconductor devices and nanotube termination structures
#228Semiconductor diode and method of manufacture
#229Protective element for electronic circuits
#230Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode
#231Superjunction structures for power devices and methods of manufacture
#232Semiconductor device and method for manufacturing same
#233Approach to integrate Schottky in MOSFET
#234SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#235Semiconductor device and method for manufacturing same
#236Schottky barrier diode and MOSFET semiconductor device
#237Semiconductor device and method for manufacturing same
#238SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#239Trench schottky diode and manufacturing method thereof
#240Trench MOS barrier schottky (TMBS) having multiple floating gates
#241Trench-based power semiconductor devices with increased breakdown voltage characteristics
#242Field-Effect Transistor with Integrated TJBS Diode
#243Semiconductor system and method for manufacturing same
#244Mesa edge shielding trench Schottky rectifier and method of manufacture thereof
#245High efficiency rectifier
#246Method of manufacturing semiconductor devices
#247Schottky rectifier
#248Semiconductor structure with a planar Schottky contact
#249FABRICATION METHOD OF INTEGRATING POWER TRANSISTOR AND SCHOTTKY DIODE ON A MONOLITHIC SUBSTRATE
#250Reduced process sensitivity of electrode-semiconductor rectifiers
#251Schottky barrier diode
#252Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
#253Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
#254Power supply circuit having a semiconductor device including a MOSFET and a Schottky junction
#255Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#256Semiconductor device having an edge termination structure and method of manufacture thereof
#257Low Qgd trench MOSFET integrated with schottky rectifier
#258Power semiconductor structure with field effect rectifier and fabrication method thereof
#259Shield contacts in a shielded gate MOSFET
#260Semiconductor device and method of manufacturing the same
#261Schottky barrier semiconductor device
#262Trench DMOS device with improved termination structure for high voltage applications
#263Trench MOS device with improved termination structure for high voltage applications
#264Semiconductor device and method for manufacturing same
#265Semiconductor device and method for manufacturing same
#266SEMICONDUCTOR DEVICE
#267TRENCH TERMINATION STRUCTURE
#268Planar TMBS rectifier
#269Semiconductor device and method of manufacturing the same
#270Trench-gated MIS devices
#271MOSFET device with reduced breakdown voltage
#272Semiconductor device including a MOSFET and a Schottky junction
#273Shield contacts in a shielded gate MOSFET
#274Trench schottky diode and method for manufacturing the same
#275Structure related to a thick bottom dielectric (TBD) for trench-gate devices
#276Reduced process sensitivity of electrode-semiconductor rectifiers
#277Nanotube semiconductor devices
#278Method of manufacturing semiconductor device having integrated MOSFET and Schottky diode
#279Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts
#280Low Qgd trench MOSFET integrated with schottky rectifier
#281Trench junction barrier controlled Schottky
#282Semiconductor device and method for its manufacture
#283MSD integrated circuits with shallow trench
#284Structure with PN clamp regions under trenches
#285Trench-shielded semiconductor device
#286Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
#287Integrated trench MOSFET with trench Schottky rectifier
#288Semiconductor device and method of manufacturing the same
#289Trench-based power semiconductor devices with increased breakdown voltage characteristics
#290Trench-based power semiconductor devices with increased breakdown voltage characteristics
#291Trench-based power semiconductor devices with increased breakdown voltage characteristics
#292Trench-based power semiconductor devices with increased breakdown voltage characteristics
#293MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrinkage and performance improvement
#294Rectifier with PN clamp regions under trenches
#295Integrated trench MOSFET and Schottky rectifier with trench contact structure
#296Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
#297TRENCH SCHOTTKY WITH MULTIPLE EPI STRUCTURE
#298Semiconductor device and method of manufacturing the same
#299Semiconductor device
#300MOS device with Schottky barrier controlling layer