208794 ⎘
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Light-emitting device and driving method thereof
#602Crystal substrate, ultraviolet light-emitting device, and manufacturing methods therefor
#603III-nitride nanowire LED with strain modified surface active region and method of making thereof
#604Patterned substrate design for layer growth
#605Stress relieving semiconductor layer
#606NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
#607Semiconductor component with a multi-layered nucleation body
#608Protective capping layer for spalled gallium nitride
#609Semiconductor device with improved light propagation
#610Ultrathin solid state dies and methods of manufacturing the same
#611Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
#612NITRIDE BASED LIGHT EMITTING SEMICONDUCTOR DEVICE WITH DESIRABLE CARBON TO ALUMINUM CONCENTRATION RATIO
#613Semiconductor light-emitting element
#614NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
#615Diode having high brightness and method thereof
#616Heterostructure including anodic aluminum oxide layer
#617Light-emitting device and manufacturing method thereof
#618Pseudomorphic electronic and optoelectronic devices having planar contacts
#619Semiconductor heterostructure with stress management
#620Method and apparatus for producing large, single-crystals of aluminum nitride
#621Light emitting device
#622Light-emitting device having a patterned surface
#623Light-emitting element and method for producing the same
#624Epitaxial structure with air voids in shape of trapezoid
#625EPITAXIAL STRUCTURE AND EPITAXIAL GROWTH METHOD FOR FORMING EPITAXIAL LAYER WITH CAVITIES
#626Nitride Light Emitting Diode Structure
#627Nitride Light Emitting Diode
#628Light emitting device having nitride quantum dot and method of manufacturing the same
#629Method for manufacturing a light emitting element
#630Electric-programmable magnetic module
#631Nitride semiconductor template and light emitting element
#632ULTRAVIOLET LIGHT-EMITTING DIODE
#633Semiconductor light emitting device
#634Light Emitting Diodes and Fabrication Method
#635Manufacturing method of flip-chip structure of group III semiconductor light emitting device
#636Light emitting device having buffer layer with graded composition
#637Optoelectronic device with a nanowire semiconductor layer
#638Light extraction from optoelectronic device
#639Fabrication method of nitride light emitting diodes
#640Semiconductor structure with stress-reducing buffer structure
#641Non-polar blue light LED epitaxial wafer based on LAO substrate and preparation method thereof
#642Wafer-level light emitting diode package and method of fabricating the same
#643Epitaxy technique for growing semiconductor compounds
#644Patterned layer design for group III nitride layer growth
#645III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
#646Contact configuration for optoelectronic device
#647Light emitting heterostructure with partially relaxed semiconductor layer
#648Nitride-based semiconductor light-emitting device
#649Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module
#650Light emitting diode chip
#651Semiconductor light-emitting device
#652Semiconductor light-emitting device
#653Process for producing group III nitride crystal and apparatus for producing group III nitride crystal
#654Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal
#655Light emitting device and lighting system
#656SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME
#657LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF
#658Fabrication of thin-film devices using selective area epitaxy
#659Light emitting semiconductor devices with getter layer
#660Nitride semiconductor element and method for manufacturing the same
#661Sapphire substrate with patterned structure
#662Semiconductor ultraviolet light emitting device having improved light extraction efficiency
#663Backlight module with MJT LED and backlight unit including the same
#664Optoelectronic Semiconductor Device With Ferromagnetic Domains
#665Nitride semiconductor device and method for producing the same
#666Method for producing a semiconductor layer sequence
#667Optoelectronic device with improved light extraction efficiency
#668Semiconductor material having a compositionally-graded transition layer
#669Method of manufacturing structures of LEDs or solar cells
#670Light-emitting device and manufacturing method thereof
#671Semiconductor light emitting device and method of manufacturing the same
#672Conversion of strain-inducing buffer to electrical insulator
#673Method for producing a layer structure as a buffer layer of a semiconductor component and layer structure as a buffer layer of a semiconductor component
#674Resonant cavity strained III-V photodetector and LED on silicon substrate
#675Backlight module with MJT LED and backlight unit including the same
#676Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates
#677EPITAXIAL GROWTH SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME
#678Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
#679Method of producing a semiconductor layer sequence and an optoelectronic semiconductor component
#680Semiconductor heterostructure with stress management
#681Light-emitting diode
#682Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
#683Light emitting device (LED) driving apparatus and lighting device including the same
#684LED driving apparatus and lighting apparatus including the same
#685MULTILAYER STRUCTURE CONTAINING A CRYSTAL MATCHING LAYER FOR INCREASED SEMICONDUCTOR DEVICE PERFORMANCE
#686Nitride semiconductor template and ultraviolet LED
#687Vertical structure LEDs
#688Epitaxial structure and method for making the same
#689Semiconductor light-emitting element
#690LIGHT EMITTING DIODE
#691Method of making a semiconductor device
#692Wafer-level light emitting diode and wafer-level light emitting diode package
#693SUBSTRATE USED FOR GROUP III-V NITRIDE GROWTH AND METHOD FOR PREPARATION THEREOF
#694Substrate used for III-V-nitride growth and manufacturing method thereof
#695Heterostructure with stress controlling layer
#696Epitaxy base, semiconductor light emitting device and manufacturing methods thereof
#697Semiconductor light emitting device
#698Fabrication Method of Nitride Light Emitting Diodes
#699Method of manufacturing semiconductor substrate and substrate for semiconductor growth
#700Semiconductor light emitting diode chip and light emitting device having the same
#701Light emitting diode and light emitting diode package
#702Semiconductor structure with stress-reducing buffer structure
#703Nitride semiconductor light-emitting device and method for producing the same
#704BACKLIGHT MODULE WITH MJT LED AND BACKLIGHT UNIT INCLUDING THE SAME
#705Semiconductor structure with inhomogeneous regions
#706Semiconductor light-emitting device and semiconductor light-emitting device array
#707Display substrate, its manufacturing method and display device
#708Nitride semiconductor structure
#709Semiconductor substrate, semiconductor device, and manufacturing methods thereof
#710Waveguide fabrication method
#711Method of forming an integrated circuit and related integrated circuit
#712Patterned layer design for group III nitride layer growth
#713Light emitting device
#714SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MAKING THE SAME
#715Semiconductor substrate, semiconductor device and manufacturing method of semiconductor substrate
#716Nitride semiconductor light emitting device and method of fabricating the same
#717Reducing or eliminating nanopipe defects in III-nitride structures
#718Light emitting diode with light emitting layer containing nitrogen and phosphorus
#719PVD buffer layers for LED fabrication
#720Method for producing group III nitride semiconductor light-emitting device
#721Nitride semiconductor light emitting device
#722III-nitride light emitting device including porous semiconductor
#723Red light emitting device and lighting system
#724Back contact LED through spalling
#725Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module
#726Light-emitting device and production method therefor
#727Ultraviolet light emitting devices and methods of fabrication
#728SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SAME, AND LIGHT EMITTING DEVICE
#729Semiconductor structures having active regions comprising InGaN and methods of forming such semiconductor structures
#730GaN-based LED epitaxial structure and preparation method thereof
#731Method and system for epitaxy processes on miscut bulk substrates
#732Template for epitaxial growth, method for producing the same, and nitride semiconductor device
#733III-nitride nanowire LED with strain modified surface active region and method of making thereof
#734Luminescent ceramic for a light emitting device
#735Substrate having annealed aluminum nitride layer formed thereon and method for manufacturing the same
#736Light emitting diode with Bragg reflector
#737Nitride light-emitting diode
#738Method of bonding a semiconductor device to a support substrate
#739Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer
#740Gallium nitride on 3C—SiC composite wafer
#741Stress relieving semiconductor layer
#742Patterned substrate design for layer growth
#743Optoelectronic semiconductor device
#744SEMICONDUCTOR LIGHT EMITTING DEVICE
#745Light-emitting diode
#746Nitride semiconductor ultraviolet light-emitting element
#747Stress mitigating amorphous SiOinterlayer
#748Light emitting diode
#749GaN template substrate
#750Light-emitting device
#751Optoelectronic semiconductor chip
#752Pseudomorphic electronic and optoelectronic devices having planar contacts
#753Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
#754Light emitting heterostructure with partially relaxed semiconductor layer
#755Devices formed from a non-polar plane of a crystalline material and method of making the same
#756Strain-control heterostructure growth
#757SEMICONDUCTOR LIGHT-EMITTING DEVICE
#758SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
#759III nitride semiconductor epitaxial substrate and III nitride semiconductor light emitting device, and methods of producing the same
#760Electronic devices comprising n-type and p-type superlattices
#761Nitride semiconductor element and nitride semiconductor wafer
#762Light-Emitting Diode Epitaxial Structure
#763Substrate regeneration method and regenerated substrate
#764Method of forming a light emitting diode structure and a light diode structure
#765Semiconductor material including different crystalline orientation zones and related production process
#766Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure
#767Nitride semiconductor device and method for producing the same
#768Method for producing light-emitting device and method for producing group III nitride semiconductor
#769Light emitting device and lighting system
#770Semiconductor structures having active regions including indium gallium nitride, methods of forming such semiconductor structures, and related light emitting devices
#771Light emitting diode element and method of manufacturing the same
#772Semiconductor structure with inhomogeneous regions
#773Semiconductor light emitting device
#774Light emitting devices and methods of manufacturing the same
#775VERTICAL-TYPE SEMICONDUCTOR LIGHT-EMMITTING DEVICE AND METHOD OF FABRICATING THE VERTICAL-TYPE LIGHT-EMITTING DEVICE
#776Zero-Dimensional Electron Devices and Methods of Fabricating the Same
#777Ultraviolet light emitting device doped with boron
#778Epitaxy base, semiconductor light emitting device and manufacturing methods thereof
#779Epitaxial structure with pattern mask layers for multi-layer epitaxial buffer layer growth
#780Patterned substrate design for layer growth
#781LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
#782Method for producing a nitride compound semiconductor device
#783Semiconductor device and the method of manufacturing the same
#784III-V photonic integrated circuits on silicon substrate
#785Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)
#786Semiconductor component comprising an interlayer
#787Method for producing optoelectronic semiconductor chips
#788Light emitting diode, method of fabricating the same and LED module having the same
#789SEMICONDUCTOR STRUCTURE
#790Semiconductor structure
#791Nanostructure semiconductor light emitting device
#792Light emitting diode and method for manufacturing the same
#793Nanostructure semiconductor light emitting device
#794Epitaxial substrate, method of manufacturing the epitaxial substrate and light emitting diode having epitaxial substrate
#795SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF
#796Light-emitting device and manufacturing method thereof
#797Light emitting device and lighting system
#798Semiconductor light-emitting device
#799Display device
#800Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
#801Light emitting device and light emitting device package having the same
#802Light-emitting diode with multiple quantum wells and asymmetric p-n junction
#803Light emitting diode and method of manufacturing the same
#804P-type doping layers for use with light emitting devices
#805GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR
#806Semiconductor wafer, semiconductor device, and method for manufacturing nitride semiconductor layer
#807Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer
#808Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices
#809Patterned layer design for group III nitride layer growth
#810Ultraviolet light emitting device separated from growth substrate and method of fabricating the same
#811GALNASSB SOLID SOLUTION-BASED HETEROSTRUCTURE, METHOD FOR PRODUCING SAME AND LIGHT EMITTING DIODE BASED ON SAID HETEROSTRUCTURE
#812Tetradymite layer assisted heteroepitaxial growth and applications
#813Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods
#814Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode
#815Light emitting diode, method of fabricating the same and LED module having the same
#816SEMICONDUCTOR STRUCTURE
#817Nitride semiconductor layer, nitride semiconductor device, and method for manufacturing nitride semiconductor layer
#818Conversion of strain-inducing buffer to electrical insulator
#819Patterned layer design for group III nitride layer growth
#820Ultraviolet light emitting diode and method for producing same
#821Semiconductor layer sequence and method for producing a semiconductor layer sequence
#822Backlight module with MJT LED and backlight unit including the same
#823Thin light emitting diode and fabrication method
#824Method for manufacturing light emitting element
#825Nitride semiconductor element and method for manufacturing the same
#826Semiconductor light-emitting element
#827Nitride semiconductor light-emitting element
#828Optoelectronic semiconductor chip having reduced strain between different constituent materials of the chip
#829Light emitting diode chip having multi microstructure substrate surface
#830LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS
#831III-V Group Compound Devices with Improved Efficiency and Droop Rate
#832Zero-dimensional electron devices and methods of fabricating the same
#833Semiconductor structure
#834Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
#835UV light emitting device
#836Diode having high brightness and method thereof
#837Semiconductor substrate for controlling a strain
#838Vapor phase growth method of growing a film on a substrate while heating the substrate with a heating unit
#839Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer
#840Light emitting device with reduced epi stress
#841LED epitaxial structure and fabrication method thereof
#842Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods
#843DISPLAY PANEL AND MOTHER BOARD INCLUDING THE SAME
#844Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device
#845Nitride light emitting diode and fabrication method thereof
#846Nitride semiconductor element and method for manufacturing the same
#847Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates
#848Gallium nitride substrate and manufacturing method of nitride semiconductor crystal
#849Luminescent device and manufacturing method for luminescent device and semiconductor device
#850Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
#851Composite substrate, semiconductor device including the same, and method of manufacturing the same
#852Seed crystal substrates, composite substrates and functional devices
#853Light Emitting Diode Device
#854Light emitting diode device having super lattice structure and a nano-structure layer
#855III-nitride based semiconductor structure
#856Selective gallium nitride regrowth on (100) silicon
#857Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
#858Nitride underlayer and fabrication method thereof
#859Light emitting diode and method of fabricating the same
#860Light-emitting device and light-emitting device package
#861Method for producing a light-emitting diode display and light-emitting diode display
#862Method for manufacturing liquid crystal display device
#863Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
#864Nanowire LED structure and method for manufacturing the same
#865Semiconductor structure
#866Front-side emitting mid-infrared light emitting diode fabrication methods
#867Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device
#868Method for producing group III nitride semiconductor light-emitting device
#869Light-emitting device
#870Semiconductor Multilayer Structure And Semiconductor Element
#871Semiconductor Multilayer Structure And Semiconductor Element
#872Semiconductor structure with stress-reducing buffer structure
#873Strain relief superlattices and optoelectronic devices including the same
#874Diode having high brightness and method thereof
#875Optoelectronic component with a layer structure
#876Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities
#877Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities
#878Semiconductor light emitting device
#879Nitride-based III-V group compound semiconductor
#880III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
#881Nitride semiconductor light emitting device
#882SOLID STATE LIGHTING DEVICE WITH REDUCED LUMINOUS FLUX DROP AT ELEVATED TEMPERATURE
#883Methods of forming semiconductor diodes by aspect ratio trapping with coalesced films
#884Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module
#885Method of singulating LED wafer substrates into dice with LED device with Bragg reflector
#886Light emitting diode having carbon nanotubes
#887Light emitting device, and method for fabricating the same
#888Light emitting diode with light emitting layer containing nitrogen and phosphorus
#889Nitride semiconductor epitaxial substrate and nitride semiconductor device
#890Nanopyramid sized opto-electronic structure and method for manufacturing of same
#891III-nitride nanowire LED with strain modified surface active region and method of making thereof
#892METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE
#893Reducing or eliminating nanopipe defects in III-nitride structures
#894Light emitting diode and method of manufacturing the same
#895Light emitting device
#896Semiconductor light-emitting element
#897Light emitting device having undoped GaN layer
#898Engineered substrates for use in crystalline-nitride based devices
#899Semiconductor structure with compositionally-graded transition layer
#900Diode having vertical structure