208794 ⎘
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Light emitting device
#902GaN based semiconductor light-emitting device and method for producing same
#903Solid state light emitting devices based on crystallographically relaxed structures
#904LED For Plant Illumination
#905PRE-CUTTING A BACK SIDE OF A SILICON SUBSTRATE FOR GROWING BETTER III-V GROUP COMPOUND LAYER ON A FRONT SIDE OF THE SUBSTRATE
#906Nitride semiconductor light emitting element and method for manufacturing same
#907METHOD OF COLLECTIVE MANUFACTURE OF LEDS AND STRUCTURE FOR COLLECTIVE MANUFACTURE OF LEDS
#908Light-emitting device
#909Carrier for a semiconductor layer
#910III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
#911Light emitting diode and forming method thereof
#912Semipolar nitride semiconductor structure and method of manufacturing the same
#913Gallium nitride based light emitting diode
#914Semiconductor devices and methods of manufacturing the same
#915Methods of stress balancing in gallium arsenide wafer processing
#916III-nitride light emitting device with a region including only ternary, quaternary, and/or quinary III-nitride layers
#917Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
#918Episubstrates for Selective Area Growth of Group III-V Material and a Method for Fabricating a Group III-V Material on a Silicon Substrate
#919(Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE
#920Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure
#921Light emitting diode for surface mount technology, method of manufacturing the same, and method of manufacturing light emitting diode module
#922SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME
#923Gallium nitride devices with discontinuously graded transition layer
#924Heterostructure including a composite semiconductor layer
#925Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device
#926NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE
#927Light emitting device, light emitting device package including the device and lighting apparatus including the package
#928Semiconductor device having trench and fabrication method thereof
#929Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same
#930Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode
#931Heterostructure including anodic aluminum oxide layer
#932Light-emitting diode and manufacturing method therefor
#933Light emitting device
#934Group III nitride heterostructure for optoelectronic device
#935Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same
#936LIGHT-EMITTING DIODE
#937Patterned opto-electrical substrate and method for manufacturing the same
#938Semiconductor light emitting device and method for manufacturing the same
#939Nitride semiconductor light-emitting element
#940Light-emitting diode with local photonic crystals
#941Light emitting diode and method for manufacturing the same
#942LED that has bounding silicon-doped regions on either side of a strain release layer
#943Single photon source die and method of manufacturing the same
#944METHOD FOR FABRICATING NANO-PATTERNED SUBSTRATE FOR HIGH-EFFICIENCY NITRIDE-BASED LIGHT-EMITTING DIODE
#945Semiconductor light emitting device including hole injection layer
#946Light emitting device and light emitting device package having the same
#947LED die and method of manufacturing the same
#948Semiconductor light emitting device
#949LIGHT EMITTING STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING ELEMENT HAVING THE SAME
#950Method for producing an optoelectronic component
#951Thin light emitting diode and fabrication method
#952Semiconductor light emitting device
#953Group III nitride semiconductor light-emitting device
#954Thin light emitting diode and fabrication method
#955Light-emitting device with improved light extraction efficiency
#956Semiconductor substrate, semiconductor device, and manufacturing methods thereof
#957Light emitting device
#958LIGHT EMITTING DIODES WITH QUANTUM DOT PHOSPHORS
#959Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
#960Semiconductor light emitting element
#961Growth substrate and light emitting device comprising the same
#962Light emitting diodes having zinc oxide fibers over silicon substrates
#963III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
#964Semiconductor optical emitting device with metallized sidewalls
#965Method of controlling stress in group-III nitride films deposited on substrates
#966Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer
#967Gallium nitride-based light emitting diode
#968LED CHIP AND METHOD OF MANUFACTURING THE SAME
#969Gallium nitride semiconductor structures with compositionally-graded transition layer
#970Low-defect semiconductor device and method of manufacturing the same
#971Light emitting device, method of manufacturing the same, light emitting device package and lighting system
#972Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
#973Clad material for LED light-emitting element holding substrate, and method for manufacturing same
#974Light emitting diode
#975Optoelectronic semiconductor chip
#976Light emitting device
#977Semiconductor device and method of manufacturing the same
#978Substrate having hetero-structure, method for manufacturing the same and nitride semiconductor light emitting device using the same
#979Semiconductor device, light emitting device using the same, and light emitting device package including the same
#980Flip light emitting diode chip and method of fabricating the same
#981Light-emitting device
#982Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure
#983Light emitting device
#984Stress relieving semiconductor layer
#985Semiconductor layer sequence, optoelectronic semiconductor chip and method for producing a semiconductor layer sequence
#986Light-emitting device manufacturing method
#987Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer
#988Optoelectronic device
#989Method for bonding semiconductor substrates
#990Etching method
#991Method for producing an optoelectronic nitride compound semiconductor component
#992Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer
#993Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
#994Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
#995Low warpage wafer bonding through use of slotted substrates
#996Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
#997Growth substrate, nitride semiconductor device and method of manufacturing the same
#998Method of fabricating nitride semiconductor light emitting device
#999Semiconductor light-emitting device and method of manufacturing the same
#1000Nitride semiconductor light-emitting element and method for producing same
#1001Crystal layered structure and method for manufacturing same, and semiconductor element
#1002Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
#1003Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same
#1004Light emitting device for improving a light emission efficiency
#1005Method of manufacture for nitride semiconductor light emitting element, wafer, and nitride semiconductor light emitting element
#1006Semiconductor light emitting device
#1007Light emitting element and light emitting element package
#1008Light emitting heterostructure with partially relaxed semiconductor layer
#1009Light emitting device
#1010Group III-V substrate material with thin buffer layer and methods of making
#1011Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods
#1012LED epitaxial structure
#1013Devices formed from a non-polar plane of a crystalline material and method of making the same
#1014Light emitting device grown on a relaxed layer
#1015Method of forming semiconductor layer and semiconductor light emitting device
#1016Nitride semiconductor ultraviolet light-emitting element
#1017GALLIUM NITRIDE SUBSTRATE AND METHOD FOR FABRICATING THE SAME
#1018Nitride semiconductor structure and method of preparing the same
#1019Gallium nitride based light emitting diode
#1020Semiconductor light emitting device
#1021Selective gallium nitride regrowth on (100) silicon
#1022Light emitting devices having dislocation density maintaining buffer layers
#1023Patterned layer design for group III nitride layer growth
#1024LED on silicon substrate using zinc-sulfide as buffer layer
#1025Light emitting diode
#1026(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers
#1027Selective gallium nitride regrowth on (100) silicon
#1028Led that has bounding silicon-doped regions on either side of a strain release layer
#1029Light emitting device
#1030Hetero-substrate, nitride-based semiconductor light emitting device, and method for manufacturing the same
#1031Nitride semiconductor element and nitride semiconductor wafer
#1032Nitride-based semiconductor light-emitting device
#1033Light emitting diode, light emitting diode lamp, and illuminating apparatus
#1034Epitaxial substrate, light-emitting diode, and methods for making the epitaxial substrate and the light-emitting diode
#1035Crystal growth method and semiconductor light emitting device
#1036Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
#1037Light emitting device
#1038Substrate structure and method of manufacturing the same
#1039Light emitting device and light emitting device package having the same
#1040NITRIDE SEMICONDUCTOR DEVICE
#1041NITRIDE SEMICONDUCTOR DEVICE
#1042Method for making epitaxial structure
#1043Epitaxial structure
#1044Semiconductor epitaxial structure
#1045Semiconductor wafer for semiconductor device having a multilayer
#1046Nitride semiconductor wafer, nitride semiconductor device, and method for manufacturing nitride semiconductor wafer
#1047Semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer
#1048SEMICONDUCTOR STRUCTURE WITH PATTERNED BURIED LAYER
#1049Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate
#1050Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same
#1051Epitaxial formation structures and associated methods of manufacturing solid state lighting devices
#1052Light emitting device
#1053Multiple quantum well light emitting device with multi-layer barrier structure
#1054Semiconductor stacked body, method for manufacturing same, and semiconductor element
#1055Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers
#1056Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
#1057LED epitaxial Structure
#1058Forming light-emitting diodes using seed particles
#1059Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities
#1060Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer
#1061Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
#1062Optoelectronic device and method for manufacturing the same
#1063Method of producing an optoelectronic semiconductor chip, and such a semiconductor chip
#1064Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
#1065Light emitting device and light emitting device package
#1066Gallium nitride based semiconductor device and method of manufacturing the same
#1067Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
#1068Laminate substrate and method of fabricating the same
#1069White nanoLED without requiring color conversion
#1070TENSION RELEASE LAYER STRUCTURE OF LIGHT-EMITTING DIODE
#1071n-AlGaN THIN FILM AND ULTRAVIOLET LIGHT EMITTING DEVICE INCLUDING THE SAME
#1072Nitride based semiconductor light emitting device
#1073Optoelectronic device and method for manufacturing the same
#1074Semiconductor device and method of producing the same
#1075PVD buffer layers for LED fabrication
#1076Compound semiconductor devices and methods of fabricating the same
#1077Semiconductor light emitting device and manufacturing method of the same
#1078Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element
#1079Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer therein
#1080Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
#1081Group III nitride compound semiconductor light emitting element and method for producing the same
#1082Light-emitter-based devices with lattice-mismatched semiconductor structures
#1083Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
#1084Method for manufacturing semiconductor light emitting element
#1085Light-emitting diode and light-emitting diode lamp
#1086Method for manufacturing nitride semiconductor layer
#1087Semiconductor light-emitting device
#1088SEMICONDUCTOR LIGHT EMITTING DEVICE
#1089Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
#1090High bandgap III-V alloys for high efficiency optoelectronics
#1091Substrate with buffer layer for oriented nanowire growth
#1092Method of growing a high quality III-V compound layer on a silicon substrate
#1093Solid state light emitting devices based on crystallographically relaxed structures
#1094Compound semiconductor devices and methods for fabricating the same
#1095SEMICONDUCTOR LIGHT-EMITTING ELEMENT WITH CORTEX-LIKE NANOSTRUCTURES
#1096Methods of stress balancing in gallium arsenide wafer processing
#1097Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds
#1098Optoelectronic semiconductor chip and method for producing same
#1099Nitride-based light emitting device with excellent light emitting efficiency using strain buffer layer
#1100Group III nitride semiconductor light-emitting device and production method therefor
#1101REO-Si TEMPLATE WITH INTEGRATED REO LAYERS FOR LIGHT EMISSION
#1102Materials and methods for organic light-emitting device microcavity
#1103GALLIUM NITRIDE GROWTH METHOD ON SILICON SUBSTRATE
#1104Optoelectronic device and method for manufacturing the same
#1105Nitride semiconductor light-emitting element and method for producing nitride semiconductor light-emitting element
#1106Light emitting diode epitaxial structure and manufacturing method of the same
#1107Light emitting device
#1108Light emitting diode and light emitting diode lamp
#1109Epitaxial wafer for light-emitting diodes
#1110Method of manufacturing nitride semiconductor device
#1111Nitride semiconductor wafer including different lattice constants
#1112Semiconductor light emitting device
#1113Semiconductor light emitting device and semiconductor wafer
#1114LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS
#1115P-type doping layers for use with light emitting devices
#1116Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
#1117Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
#1118Buffer layer for GaN-on-Si LED
#1119Nitride semiconductor template and light-emitting diode including oxygen-doped layer and silicon-doped layer formed on the oxygen-doped layer
#1120Solid state light emitting semiconductor structure and epitaxy growth method thereof
#1121Light emitting device
#1122Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
#1123N-type gallium-nitride layer having multiple conductive intervening layers
#1124LED having a low defect N-type layer that has grown on a silicon substrate
#1125LED ON SILICON SUBSTRATE USING ZINC-SULFIDE AS BUFFER LAYER
#1126Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrate
#1127Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates
#1128Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
#1129Semiconductor template substrate, light-emitting device using a semiconductor template substrate, and manufacturing method therefor
#1130Nitride-based semiconductor light emitting device
#1131NITRIDE-BASED SEMICONDUCTOR DEVICE HAVING EXCELLENT STABILITY
#1132Method of manufacturing a nitride semiconductor epitaxial substrate
#1133NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
#1134Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
#1135SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
#1136Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus
#1137Method for reducing stress in epitaxial growth
#1138Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates
#1139Nitride semiconductor light-emitting element and method for producing same
#1140Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN
#1141Light emitting device
#1142EPITAXIAL SUBSTRATE, LIGHT-EMITTING DIODE, AND METHODS FOR MAKING THE EPITAXIAL SUBSTRATE AND THE LIGHT-EMITTING DIODE
#1143Light-emitting diode with strain-relaxed layer for reducing strain in active layer
#1144Light emitting device and light emitting device package having the same
#1145Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer
#1146Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer
#1147Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer
#1148Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
#1149Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
#1150Semiconductor light emitting device and wafer
#1151SEMICONDUCTOR SUBSTRATE AND FABRICATING METHOD THEREOF
#1152Semi-polar nitride-based light emitting structure and method of forming same
#1153Method for making light emitting diode
#1154Method for making light emitting diode
#1155Method for making light emitting diode
#1156Method for making light emitting diode
#1157Light emitting diode
#1158Light emitting diode
#1159Light emitting diode
#1160Epitaxiay wafer, method for manufacturing the same and method for manufacturing LED chip
#1161III-NITRIDE LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER
#1162Group III nitride semiconductor multilayer structure and production method thereof
#1163NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
#1164Nitride semiconductor light emitting device and fabrication method thereof
#1165Light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure
#1166Wafer, crystal growth method, and semiconductor device
#1167NITRIDE BASED LIGHT EMITTING DEVICE USING WURTZITE POWDER AND METHOD OF MANUFACTURING THE SAME
#1168NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT CRYSTALLINITY AND BRIGHTNESS AND METHOD OF MANUFACTURING THE SAME
#1169NITRIDE BASED LIGHT EMITTING DEVICE USING SILICON SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
#1170METHOD OF MANUFACTURING GaN POWDER AND NITRIDE-BASED LIGHT EMITTING DEVICE USING GaN POWDER MANUFACTURED BY THE METHOD
#1171Light emitting diode with polarization control
#1172LED epitaxial structure and manufacturing method
#1173Structure and method to reduce wafer warp for gallium nitride on silicon wafer
#1174Controlling pit formation in a III-nitride device
#1175High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof
#1176(Al, In, Ga, B)N device structures on a patterned substrate
#1177Semiconductor light emitting device and method for manufacturing the same
#1178Light emitting device with dislocation bending structure
#1179Defect-controlling structure for epitaxial growth, light emitting device containing defect-controlling structure, and method of forming the same
#1180LIGHT EMITTING DEVICE WITH VARYING BARRIERS
#1181Growth substrate and light emitting device
#1182METAMORPHIC SUBSTRATE SYSTEM, METHOD OF MANUFACTURE OF SAME, AND III-NITRIDES SEMICONDUCTOR DEVICE
#1183Light emitting chip and method for manufacturing the same
#1184Semiconductor substrate, method for producing semiconductor substrate, substrate for semiconductor growth, method for producing substrate for semiconductor growth, semiconductor element, light-emitting element, display panel, electronic element, solar cell element, and electronic device
#1185Semiconductor device
#1186Light emitting device
#1187Light emitting device
#1188METHOD FOR MAKING EPITAXIAL STRUCTURE
#1189Method for making epitaxial structure
#1190Method for making epitaxial structure
#1191Method for making semiconductor epitaxial structure
#1192Method for making epitaxial structure
#1193EPITAXIAL STRUCTURE
#1194Epitaxial structure and method for making the same
#1195Nitride semiconductor substrate
#1196SEMICONDUCTOR EPITAXIAL STRUCTURE
#1197Epitaxial structure
#1198Nitride semiconductor device and method of producing the same
#1199Base and method for making epitaxial structure using the same
#1200Method for making epitaxial structure using carbon nanotube mask