Light-Emitting Diode and Method for Manufacturing the Same

III-nitride light emitting devices grown on templates to reduce strain

Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light

III-nitride light emitting device with reduced strain light emitting layer

III-Nitride compound semiconductor light emitting device

Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission

Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices

Nitride semiconductor light emitting device and fabrication method thereof

Luminescent ceramic for a light emitting device

High Efficiency Light-Emitting Diodes

Method of controlling stress in gallium nitride films deposited on substrates

Light-emitter-based devices with lattice-mismatched semiconductor structures

Nitride semiconductor light emitting device and fabrication method thereof

Method of fabricating vertical devices using a metal support film

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

VARIABLE PERIOD VARIABLE COMPOSITION SUPPERLATTICE AND DEVICES INCLUDING SAME

Nitride-based light emitting device

Method of fabricating vertical structure LEDs

Method of fabricating vertical structure LEDs

Light Emitting Device and Method for Fabricating the Same

Light-emitting diode incorporating an array of light extracting spots

LIGHT EMITTING DIODE STRUCTURE

Semiconductor light emitting device substrate and method of fabricating the same

Nitride-based semiconductor light-emitting diode and illuminating device

Light emitting diode and fabrication method thereof

Nitride semiconductor device and method for fabricating the same

Nitride semiconductor light-emitting device and method for manufacturing the same

Semiconductor light emitting device and method of manufacturing the same

Group III nitride semiconductor device and light-emitting device using the same

Nitride semiconductor light emitting device and method for fabricating the same

Group-III nitride semiconductor device

Nitride semiconductor light-emitting device comprising a buffer layer including a plurality of layers having different lattice constants and method for manufacturing the same

Method and apparatus for producing large, single-crystals of aluminum nitride

Nitride based semiconductor device having multiple layer buffer structure and fabrication method thereof

Method for growing a nitride-based III-V Group compound semiconductor

Group III nitride semiconductor stacked structure and production method thereof

Nitride semiconductor and method for manufacturing thereof

Epitaxial substrate, method of making same and method of making a semiconductor chip

Electronic device containing group-III element based nitride semiconductors

Nitride semiconductor device

Semiconductor device

Semiconductor light-emitting device

Diode having vertical structure and method of manufacturing the same

Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device

Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof

Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same

Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device

Method of fabricating vertical devices using a metal support film

Method for manufacturing nitride-based semiconductor device

Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices

Light emitting device

Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode

Method of fabricating vertical structure LEDs

Method of producing nitride-based semiconductor device, and light-emitting device produced thereby

Light-emitting device and method of manufacturing the same

Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same

Gallium nitride semiconductor light emitting device and method of manufacturing the same

Compound semiconductor devices and methods of manufacturing the same

Semiconductor device and manufacturing method thereof

Semiconductor light emitting diode having textured structure and method of manufacturing the same

Semiconductor light emitting diode having efficiency and method of manufacturing the same

Semiconductor light emitting device having textured structure and method of manufacturing the same

Gallium nitride-based light emitting diode and fabrication method thereof

Method of fabricating vertical structure LEDs

Vertical topology light emitting device

Structure of GaN light-emitting diode

Method of fabricating vertical devices using a metal support film

Nitride-based semiconductor device

Diode having vertical structure and method of manufacturing the same

Light emitting device using nitride semiconductor and fabrication method of the same

Method of fabricating vertical structure LEDs

Wafer for compound semiconductor devices, and method of fabrication

Semiconductor device having an undercoat layer and method of manufacturing the same

Structure of GaN light-emitting diode

Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode

Gallium-nitride based light emitting diode structure

Diode having high brightness and method thereof

Strain-controlled III-nitride light emitting device

Buffer layer of light emitting semiconducting device

Luminescent ceramic for a light emitting device

Nitride semiconductor and fabrication method thereof

Strain-controlled III-nitride light emitting device

Substrate buffer structure for group III nitride devices

Light emitting device using nitride semiconductor and fabrication method of the same

Semiconductor light emitting device and manufacturing method therefor

Nitride semiconductor LED and fabrication method thereof

Gallium nitride-based semiconductor light-emitting device

Method of making group III nitride compound semiconductor light emitting element

Nitride semiconductor device and method of manufacturing the same

Gallium nitride semiconductor light emitting device and method of manufacturing the same

TEXTURE FOR LOCALIZING AND MINIMIZING EFFECTS OF LATTICE CONSTANTS MISMATCH

Method of fabricating vertical structure LEDs

Group III-nitride on Si using epitaxial BP buffer layer

Group III nitride semiconductor device and its method of manufacture

Light-emitting device and method of manufacturing the same

Optical device comprising crystalline semiconductor layer and reflective element

Semiconductor light-emitting element

Strained and strain control regions in optical devices

Strained and strain control regions in optical devices

Beryllium doped GaN-based light emitting diode and method

Semiconductor structure, high electron mobility transistor, and method for fabricating semiconductor structure

III-nitride micro-LEDs on semi-polar oriented GaN

Flexible micro-LED display module

Ultraviolet light emitting device doped with boron

Light-emitting device and method of manufacturing the same

LED panel

Flexible LED device and flexible LED panel

Ultraviolet light-emitting device with a heavily doped strain-management interlayer

Polarization free gallium nitride-based photonic devices on nanopatterned silicon

Method for reusing a substrate for making light-emitting device

Light-emitting diode fabrication method

Method of strain engineering and related optical device using a gallium and nitrogen containing active region